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eupec igbt 3.3kv

Catalog Datasheet MFG & Type PDF Document Tags

6.5kV IGBT

Abstract: eupec igbt 3.3kv Press Release ­ December 16th 2002 Warstein eupec is introducing new 3.3kV high insulating IGBT modules eupec's new 3.3kV IGBT modules offer extremely high insulation with test voltage VISOL of , realized by the use of eupec's already well established 6.5kV module layout with clearance distances of , . UP Dr. Schütze SM PD An Infineon Technologies Company eupec GmbH Max-Planck-Str. 5 D-59581 Warstein Tel. +49(0)2902 764-0 Fax +49(0)2902 764-1256 EMail info@eupec.com www.eupec.com Eupec
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IEC1287 6.5kV IGBT eupec igbt 3.3kv igbt 3.3kv eupec igbt 6.5kV IGBT 3kv

A 3150V

Abstract: HIGH VOLTAGE DIODE 3.3kv Improved Characteristics of 3.3kV IGBT Modules M.Hierholzer, R.Bayerer, eupec GmbH & Co KG, Warstein, Germany A.Porst, H.Brunner, Siemens AG, München, Germany 3.3kV IGBT modules are available on the market since beginning of 1996. In most applications the IGBT operates at a switching frequency , . Area) diagram for the IGBT. In fig.1 this diagram is shown for 3.3kV eupec devices. VCE is measured , .2: FZ1200R33KF1 turn-off limit VCEpeak Fig.1: RBSOA of 3.3kV IGBT (eupec) The peak collector-emitter
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A 3150V HIGH VOLTAGE DIODE 3.3kv 3150v Measurement of stray inductance for IGBT IC A 3150V scsoa

6.5kV IGBT

Abstract: IGBT Power Module siemens ag . Efficiency of 6.5kV-IGBT-modules Conclusion To quantify the efficiency of 6.5kV-IGBT- Eupec presents , Glantschnig (Infineon Technologies) Jürgen Göttert (eupec GmbH & Co KG) Martin Hierholzer (eupec GmbH & Co , AG) Thomas Schütze (eupec GmbH & Co KG) Reinhold Spanke (eupec GmbH & Co KG) Power control in applications with a line voltage of 3kV DC and more today is managed by GTOs and IGCTs. The IGBT, a device , 6.5kV IGBT-modules, eupec makes a power semiconductor available, which combines the advantages of
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IGBT Power Module siemens ag infineon igbt reliability siemens IGBT 600a eupec igbt 6500v igbt 6.5kv SiC IGBT High Power Modules, PCIM Hongkong

HIGH VOLTAGE DIODE 3.3kv

Abstract: EUPEC T 503 eupec GmbH, Max-Planck-Straße, D-59581 Warstein, Germany Infineon Technologies AG, Balanstraße 59, D-81541 Munich, Germany 3 Infineon Technologies AG, Siemensstraße 2, A-9500 Villach, Austria Abstract: eupec , diode can be driven at very high di/dt and dv/dt-rates. Therefore a significant reduction of the IGBT , art technology is given. I. Introduction The progress in the development of IGBT technology from planar structure to trench gate IGBT and finally to trench field stop IGBT makes it necessary to
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EUPEC T 503 FZ1200R33KF2C 3.3kv diode junction termination extension igbt 3 KA 3.3kv IRF 501

eupec igbt 3300v

Abstract: Eupec Power Semiconductors Press Release ­ May 2003 PCIM 2003 eupec is introducing its new 3300V High Power Emcon-HDR Diode with High Dynamic Robustness eupec's second generation 3300V High Power Module family is now , of two. May 2003, Warstein The new Emcon-HDR (high dynamic robustness) diode developed by eupec and , possibility to reduce the IGBT turn-on losses by 24% because faster diode commutation rates can be specified , reduced to decrease the turn-on losses of the IGBT by 24% or the gate-emitter capacitor Cge can be
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eupec igbt 3300v Eupec Power Semiconductors EUPEC DIODE Eupec igbt eupec eupec igbt driver

FZ1200R33KF2C

Abstract: igbt eupec 3.3kV EmCon-HDR Diode Due to new perceptions of eupec and Infineon in simulation and design, the , shifted upwards by 1 division. An Infineon Technologies Company eupec GmbH Max-Planck-Straße 5 D , from 1.2 to 0.9 ohms: the turnon losses of the IGBT can be drastically reduced by 24%, while the , to the datasheet of the individual module type. eupec GmbH + Co KG Max-Planck-Straße 5 D , Thomas.Schuetze@eupec.com www.eupec.com An Infineon Technologies Company Eupec
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FZ1200R33KF2 Emcon FZ1200r MN2003-03

1287-standard

Abstract: SiC IGBT High Power Modules Further Improvements in the Reliability of IGBT Modules Thomas Schütze, Hermann Berg, Martin Hierholzer eupec GmbH & Co. KG Max-Planck-Straße 5 59581 Warstein, Germany Abstract- This paper gives a survey of the measures and the resulting improvements of IGBT module reliability reached by eupec during the introduction of IGBT high power modules. 10.000.000 IHV (traction) Since their market introduction in the beginning of 1995, eupec IGBT high power modules (IHM) got a quick access to
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1287-standard SiC IGBT High Power Modules failure analysis IGBT PCIM 96 igbt failure fit

FZ1200R33KF1

Abstract: igbt 500V 2A Application and Characteristics of High Voltage IGBT Modules M.Hierholzer, eupec GmbH & Co KG, Warstein, Germany A.Porst, Th.Laska, H.Brunner, Siemens AG, München, Germany New IGBT modules with , typical IGBT advantages like low forward losses, snubberless operation and short circuit capability, an , voltage IGBT shows a different input characteristic due to changed input and reverse transfer capacitance , the same short circuit power dissipation for both devices, the current limited by the 3.3kV IGBT has
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igbt 500V 2A IGBT FZ1200 Brunner

eupec igbt 10kv

Abstract: Inverter Delta modern high voltage IGBT chip and packaging technology eupec is developing a product range of 6.5kV IGBT , The new 6.5kV IGBT module: a reliable device for medium voltage applications Thomas Schuetze, Herman Berg, Oliver Schilling eupec GmbH Max-Planck-Straße 5 59581 Warstein Germany Tel.: +49 2902 , of two 3.3kV IGBT modules for the above mentioned line voltages, can now make use of the single , across semiconductor (V CEmax = 1.5 . 2.0 x V DC,nom ) 6.5kV IGBT Modules 6.5kV IGBT Modules Fig
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eupec igbt 10kv Inverter Delta EUPEC Thyristor 1200A Thyratron dc to ac inverter thyratron Igbt 15kV 600A

BUSBAR calculation

Abstract: BUSBAR calculation datasheet with IGBT High Power Modules Dr.-Ing. Th. Schütze, eupec GmbH & Co KG, Warstein, Germany Abstract With regard to the blocking ability and efficiency of the new 3.3 kV IGBT high voltage modules (IHV , wiring advantageously in a low inductive manner. Literature [1] eupec: IGBT Modules; Technical , , which have to limit dv/dt and di/dt to acceptable values for the device, no handicaps exist for IGBT , circuits, which are necessary to fully utilize the IGBT's voltage rating, acquire a new meaning. Beside
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BUSBAR calculation BUSBAR calculation datasheet calculation of IGBT snubber 3 level inverter 3 phase motor inverters circuit diagram igbt inductances types

FS300R12OE4P

Abstract: FP06R12W1T4 , on our website www.infineon.com/highpower, these links are active. IGBT High Power Wir bieten , vehicles), power supplies, welding applications, to medical equipment. IGBT Medium Power Das, was , manufacturing. IGBT Low Power Hochleistungshalbleiter für Ihre Industrieanwendungen High power , CAV Solar UPS Induction Welding V IGBT Medium Power IGBT Low Power Content IntroductionIII LegendV IGBT Modules - Low Power 1.1 PrimePACKTM3.3 IHM Modules 3.4 IHV Modules 3.6 Diode Modules
Infineon Technologies
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FS300R12OE4P FP06R12W1T4 FS450R12OE4P F3L400R12PT4 bt 1690 scr FF150R12RT4 B133-H9378-G3-X-7600