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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil

equivalent transistor TO 2sk146

Catalog Datasheet MFG & Type PDF Document Tags

2SK146

Abstract: IFN146 E5 9 -9 7 IFN 146 DUAL N -CH AN N EL SILICON JUNCTION FIELD-EFFECT TRANSISTOR â'¢ LOW NOISE AUDIO AMPLIFIER ♦ Equivalent to Japanese 2SK146 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation 375 mW Power Derating 3 mW/°C Storage Temperature Range -65°C to 200°C IFN146 , ) 0.100 (2.54) Dia. Typ. mV = io o f i, f = 1 kHz V d s = 10, I d = 5 mA TO-71 Package
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NJ450

2SK146

Abstract: 2sk146 datasheet Databook.fxp 1/13/99 2:09 PM Page D-5 D-5 01/99 IFN146 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise Audio Amplifier ¥ Equivalent to Japanese 2SK146 Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25°C free air , Current (Pulsed) Typ IDSS ­ 40 V 10 mA 375 mW 3 mW/°C ­ 65°C to 200°C Process NJ450 Max
InterFET
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2sk146 datasheet 2sk146 equivalent equivalent transistor TO 2sk146

2sk146

Abstract: ifn146 8-94 E5 IF N 146 D U A L N -C H A N N E L SILICON JUNCTION FIELD-EFFECT TRANSISTOR LOW NOISE AUDIO AMPLIFIER Absolute maximum ratings at TA = 25"C Equivalent to Japanese 2SK146 Reverse Gate Source & Reverse Gate Drain Voltage - 40 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 375 mW Power Derating 3 mW/°C Storage Temperature Range -65°C to 200°C IFN146 , 0 ° 28 (0. 7I) Dimensions in Inches (mm) Pin Configuration TO-71 Package 1 Source, 2 Gâte
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TO71 package 150-C

2SK146

Abstract: 2SK147 equivalent Amplifier ¥ Equivalent to Japanese 2SK146 Absolute maximum ratings at TA = 25¡C Reverse Gate Source & , ¥ Low-Noise, High Gain ¥ Equivalent to Japanese 2SK112 Absolute maximum ratings at TA = 25 , Absolute maximum ratings at TA = 25¡C ¥ Low-Noise Audio Amplifier ¥ Equivalent to Japanese 2SK147 , Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon , ) 1.0 (Ø) (10 V) 3.0 (Ø) (15 V) TO-226AA TO-226AA TO-226AA TO-226AA TO-18 SGD
InterFET
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2SK105 2SK113 IFN105 NJ132 2SK147 equivalent transistor sdg 2SK105 Datasheet 2sk152 equivalent Japanese Transistor 2SK17 2SK40 2SK59 IFN17

2SK146

Abstract: 2SK147 equivalent IFN146 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise Audio Amplifier ¥ Equivalent to Japanese 2SK146 Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate , Absolute maximum ratings at TA = 25¡C ¥ Low-Noise Audio Amplifier ¥ Equivalent to Japanese 2SK147 , Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon , V) 3 (Ø) (­10 V) pF Typ Crss TO-18 TO-18 TO-18 TO-18 SDG SDG DGS
InterFET
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2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44

70H40

Abstract: 2SC734 equivalent 2SC2712 Bipolar 16 2SC4116 TRANSISTOR FOR VHF/UHF Package TO-92 (SC-43) Super-Mini (SOT , 302 % % ♦ % % * % 18 TO-92 PACKAGE SERIERS TO-92 Type , 0.5 20 2 (50) 20 10 â'" â'" â'" â'" â'" TO-92 , lchip High |Yfs|Low Noise LARGE T O -92 PACKAGE SERIES TO -92 MOD. (TO-226AE MOD ) , 2SK 389 2SJ109 â'" - 2SK389 2SJ109 13 320/270 BUILT IN RESISTOR TRANSISTOR
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70H40 2SC734 equivalent 3sk73 equivalent transistor equivalent d2012 2sc2075 equivalent 2sa970 BL equivalent 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459

IGBT M16 100-44

Abstract: Kt606 SEMICON INDEXES volume: i INTERNATIONAL TRANSISTOR INDEX 23nd EDITION 1997/8 â \ 1 .5 â , data is intended only for, and limited to, the guidance of the user. No representation whatsoever about the suitability of any device mentioned, to any application is given or implied. In all cases the user must refer to the manufacturer's data for full information on any device. No mention is made of any proprietary rights, patents, trade marks, etc. pertaining to any data presented. The absence of
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IGBT M16 100-44 Kt606 transistor 8BB smd Transistor B0243C ASEA HAFO AB SEMICON INDEXES VV276

t110 94v 0

Abstract: PTC SY 16P change's to D.A.T.A. Inc , P.O. Box 26875, San Diego, CA 92126. TECHNICAL SECTIONS Low-Power Transistor , HOW TO USE THIS BOOK 2 Basic Use Of , .563 19. Transistor Manufacturersâ'™Sales Offices .564 20. Transistor Manufacturersâ'™Logos .582 21. Transistor Manufacturersâ'™Codes, Names & Addresses , ) .134A&253A Semiconductor, Inc. Inside Cover Silicon Transistor Corp. (STC
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t110 94v 0 PTC SY 16P philips diode PH 37m 2N2955T PT895 KP303E 201069F S-171 CH-5400