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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

equivalent of transistor mje13007

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transistor mje13007 equivalent

Abstract: mje13007 equivalent Co., Ltd 1 of 6 QW-R203-019.D MJE13007 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING , UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR , -019.D MJE13007 NPN SILICON TRANSISTOR TYPICAL THERMAL RESPONSE Transient thermal resistance, r(t , 10k Time, t (msec) There are two limitations on the power handling ability of a transistor , . UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R203-019.D MJE13007 NPN SILICON
Unisonic Technologies
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MJE13007-TA3-T MJE13007L-TA3-T MJE13007-TF3-T transistor mje13007 equivalent mje13007 equivalent equivalent of transistor mje13007 silicon transistor Vcbo 800 Vceo 1000 Ic 20A TO-220F torque MJE13007L MJE13007L-TF3-T

mje13007-1

Abstract: MJE13007 ON Semiconductort MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power , the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable , major portion of the transistor power dissipation occurs during the fall time (tfi). For this reason , MJE13007 Notes http://onsemi.com 11 MJE13007 SWITCHMODE is a trademark of Semiconductor
ON Semiconductor
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mje13007-1 MJE130071 TRANSISTOR MJE13007-1 MJE13007-D AN719 MJE13007D MJE13007/D

transistor mje13007 equivalent

Abstract: mje13007 equivalent UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high­voltage, high­speed power , 0.02 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that , TECHNOLOGIES CO., LTD. 2 QW-R203-019,B UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR RESISTIVE
Unisonic Technologies
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mtp8p QW-R20

*e13007

Abstract: equivalent of transistor mje13007 UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high­voltage, high­speed power , 0.02 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that , QW-R203-019,C UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR debate the same as thermal
Unisonic Technologies
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bipolar transistor td tr ts tf

mje13007-1

Abstract: MJE130 ON Semiconductor ) MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power , POWER DERATING FACTOR 1 There are two limitations on the power handling ability of a transistor , of the transistor that must be observed for reliable operation; i.e., the transistor must not be , voltage. SWITCHING REQUIREMENTS In many switching applications, a major portion of the transistor , Times http://onsemi.com 8 10 MJE13007 Table 2. Applications Examples of Switching Circuits
ON Semiconductor
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MJE130 AN873 AN875 AN951 MJE210 MPF930
Abstract: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING , torque of 6 to 8â'¢lbs. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R219-004,A UTC MJE13007 , handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is Unisonic Technologies
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MJE13007G

Abstract: SUS CIRCUIT MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The , the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable , voltage. SWITCHING REQUIREMENTS In many switching applications, a major portion of the transistor , ://onsemi.com 8 10 MJE13007 Table 2. Applications Examples of Switching Circuits CIRCUIT LOAD LINE
ON Semiconductor
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MJE13007G SUS CIRCUIT on semiconductor AN951 MUR105

AN719

Abstract: transistor mje13007 equivalent Temperature Symbol VCEO VCES VEBO IC ICM IB IBM IE IEM PD TJ, Tstg MJE13007 400 700 9.0 8.0 16 4.0 8.0 12 24 80 0.64 - 65 to 150 Unit Vdc Vdc Vdc Adc Adc Adc Watts W/°C °C MJE13007 POWER TRANSISTOR 8.0 , . Forward Bias Power Derating There are two limitations on the power handling ability of a transistor , ON Semiconductor ) SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where
ON Semiconductor
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AN569 on semiconductor AN719 MJE13007* transistor CMJE13007

transistor mje13007 equivalent

Abstract: 1500 watts inverter diagrams SWITCHMODE are trademarks of Motorola, Inc. © Motorola, Inc. 1995 Motorola Bipolar Power Transistor , power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable , Transistor Device Data *MJE13007/D* MJE13007/D Motorola , MOTOROLA Order this document by MJE13007/D SEMICONDUCTOR TECHNICAL DATA MJE13007
Motorola
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MJF13007 1500 watts inverter diagrams AN569 in Motorola Power Applications 221D MJE/MJF13007 E69369 220AB

transistor mje13007 equivalent

Abstract: Motorola AN222A SWITCHMODE are trademarks of Motorola, Inc. © Motorola, Inc. 1995 Motorola Bipolar Power Transistor , power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable , Transistor Device Data *MJE13007/D* MJE13007/D Motorola , MOTOROLA Order this document by MJE13007/D SEMICONDUCTOR TECHNICAL DATA MJE13007
Motorola
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Motorola AN222A motorola an569 thermal

E13007

Abstract: E 13007 on the power handling ability of a transistor: average junction temperature and second break down. Safe operating area curves indicate lc - V c e limits of the transistor that must be observed for , 3-670 Motorola Bipolar Power Transistor Device Data MJE13007 MJF13007 Figure 10. Typical , , AN951. Motorola Bipolar Power Transistor Device Data 3-671 MJE13007 MJF13007 Table 1. Test , voltage. SWITCHING REQUIREMENTS In many switching applications, a major portion of the transistor power
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E13007 E 13007 F13007 F 13007 SEC E 13007 - 2 transistor MJ 13007 JE13007 JF13007 T0-220

mje 3007

Abstract: l3007 are tradem arks of Motorola, Inc. >M otorola, Inc. 1995 fM) M OTOROLA MJE13007 MJF13007 , e limits of the transistor that must be observed for reliable operation; i.e., the transistor must , . Typical Thermal Response for MJE13007 4 Motorola Bipolar Power Transistor Device Data M JE1 3007 , ITCHING REQUIREMENTS In m any sw itching applications, a m ajor portion of the transistor power , Transistor Device Data 7 M JE1 3007 M JF13007 Table 2. Applications Examples of Switching Circuits
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mje 3007 l3007 I3007 MJE 340 transistor bipolar power transistor vce 600 volt 221D-02

e13009

Abstract: E13009 TRANSISTOR equivalent FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction , Recognized to 3500 Vrms. File #E69369 MJE13007 MJF13007 POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS , "worst cass" design. Motorola Bipolar Power Transistor Device Data 3-661 MJE13007 MJFI3007 ELECTRICAL , There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves Indicate ¡c â'" Vce limits of the transistor that
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MJE15028 e13009 E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier MJE13005 MJE15030 MJE15030MJE15029 MJE15031 MJE15029

MJE130

Abstract: MJE13007G . Forward Bias Power Derating There are two limitations on the power handling ability of a transistor , switching applications, a major portion of the transistor power dissipation occurs during the fall time (tfi , MJE13007G SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The , POWER TRANSISTOR 8.0 AMPERES 400 VOLTS - 80 WATTS · · · · · · VCEO(sus) 400 V Reverse Bias SOA , contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device
ON Semiconductor
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MJE13007G equivalent transistor mje13007g MJE1300

MJE13007G

Abstract: transistor mje13007g There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must , switching applications, a major portion of the transistor power dissipation occurs during the fall time (tfi , MJE13007G SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The , POWER TRANSISTOR 8.0 AMPERES 400 VOLTS - 80 WATTS COLLECTOR 2,4 · · · · SOA and Switching
ON Semiconductor
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MJE5850 MJE5852

TRANSISTOR REPLACEMENT table for transistor

Abstract: replacement for TIP147 Unit 3­668 Motorola Bipolar Power Transistor Device Data MJE13007 MJF13007 1.4 VBE(sat , Motorola Bipolar Power Transistor Device Data 3­669 MJE13007 MJF13007 100 50 IC, COLLECTOR CURRENT , power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable , AN719, AN873, AN875, AN951. Motorola Bipolar Power Transistor Device Data 3­671 MJE13007
Motorola
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TRANSISTOR REPLACEMENT table for transistor replacement for TIP147 POWER TRANSISTOR TO-220 CASE SE9402 transistor 2SA1046 TIP41 TRANSISTOR REPLACEMENT BD863 transistor MJ15012 2N6339 2N6341 2N6497 MJ15011 MJ15016

MJE13007G

Abstract: FACTOR 1 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC â' VCE limits of the transistor , many switching applications, a major portion of the transistor power dissipation occurs during the , MJE13007G SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The , '¢ â'¢ â'¢ â'¢ â'¢ http://onsemi.com POWER TRANSISTOR 8.0 AMPERES 400 VOLTS â' 80 WATTS
ON Semiconductor
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MJE13007G

Abstract: MJE13007G equivalent power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable , major portion of the transistor power dissipation occurs during the fall time (tfi). For this reason , MJE13007G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The , · · · http://onsemi.com POWER TRANSISTOR 8.0 AMPERES 400 VOLTS - 80 WATTS VCEO(sus) 400
ON Semiconductor
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MJ802 EQUIVALENT

Abstract: 2N3055 equivalent transistor NUMBER There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ­ VCE limits of the transistor that must , of collector current. This can be Motorola Bipolar Power Transistor Device Data accomplished by , the transistor with an adequate amount of base drive VERY RAPIDLY at turn­on. More specifically, safe , results in several types of circuits (see Application Note AN951). DESIGN SAMPLES Transistor parameters
Motorola
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MJ802 EQUIVALENT 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent MJ15025* equivalent MJ16110 MJW16110 BU208A MJE16106 MJ16012 MJ10009

bd139 equivalent transistor

Abstract: transistor 2SA1046 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ­ VCE limits of the transistor that must , (BR)CEO(sus), it is essential to provide the transistor with an adequate amount of base drive VERY , violates either of these conditions will likely cause the transistor to fail. Therefore, it is important to , MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Transistor Switchmode Bridge Series
Motorola
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bd139 equivalent transistor motorola transistor cross reference transistor equivalent book 2SC2073 transistor 40251 TRANSISTOR REPLACEMENT GUIDE pin configuration transistor bd140 TIP101 TIP102 TIP106 TIP107 TIP31C TIP32C
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