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Part : EGP100 Supplier : Fairchild Semiconductor Manufacturer : ComSIT Stock : 4,650 Best Price : - Price Each : -
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egp 100

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egp 100

Abstract: . SYMBOLS EGP 10A EGP 10B EGP 10C EGP 100 EGP 10F EGP tOG UNITS Maximum repetitive , o t e 1) V rrm V rms 50 35 50 100 70 100 150 105 150 1.0 200 140 200 300 210 300 400 280 400 Volts Volts Volts Amp V dc l(AV) If s m 30.0 0.95 5.0 100 50.0 22.0 50.0 -65
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egp 100 EGP10A EGP10G D0-204AL MIL-STD-750

egp 100

Abstract: . SYMBOLS EGP 10A EGP 10B EGP 10 c EGP too EGP Ì0F EGP 100 UNITS Maximum , thermal resistance ( n o t e i) V rrm V rms Vdc l(AV) 50 35 50 100 70 100 150 105 150 1.0 200 140 200 300 210 300 400 280 400 Volts Volts Volts Amp IFSM 30.0 0.95 5.0 100 50.0 , NON-REPETTT1VE PEAK FORWARD SURGE CURRENT Q% OE
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FEP300P

Abstract: BYY26-1 PACKAGE 10(A) V R - 50(V) V R - 100(V) UV- 150(V) V R- 200 (V) V R- 300 (V) VR- 400 (V) UV-500 (V) VR- 600 (V] VR- 800 (V) V fl- 1000{V) tlT |l») SO 50 50 50 UF4005 UF4006 UF4007 50/75 D0 2 0 4 A L 1.0 EGP 10 A EG P 106 EGP 10C EGP 100 EQ P 10 F EGP 10G EGP 20 A Ihrv EQP 20 0 D0 2 0 4 A C 2.0 EGP 20 A EGP 20 B EGP20 C EOP2 0 0 EQP 20F EGP20 Q EGP 30 A tv u EGP30D QP 20 3.0 EQP 30 A EGP 30B EGP 30 C EGP 30 D EQP 30 F EGP 30 G EGPSOA Umi EGP600 QP 2D 5.0 EQP 50A EGP 50B EGP 50 C EQPSOO EGP 50 F EGPSOG UF4004
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U0060 8YV27-2DO BYY26-1 8YV26-2M FES16CT FES160T FEP300P BYY26 BYV 20f MPG06 00-204AP GI1001 GI1003 GI1004

egp 100

Abstract: EGP20D at 25°C ambient temperature unless otherwise specified. SYMBOLS EGP 20A EGP 20B EGP 20C EGP 20D EGP 20F EGP 20G UNITS VRRM VRMS 50 100 150 200 300 400 V 35 70 105 140 210 280 V *Maximum DC blocking voltage VDC 50 100 150 , °C ambient temperature unless otherwise specified. EGP 20A EGP 20B EGP 20C EGP 20D EGP 20F EGP 20G SYMBOLS Condition *Maximum instantaneous forward voltage VF IF =2.0A TA= 25
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EGP20A EGP20G EGP20D EGP20F EGP20B EGP20C DO-15

EGP 30 D

Abstract: egp 100 otherwise specified. EGP 30A EGP 30B EGP 30C EGP 30D EGP 30F EGP 30G UNrrs Maximum , temperature range V rrm V rms V dc If (av ) 50 35 50 100 70 100 150 105 150 3.0 200 140 200 , specified. SYMBOLS EGP 30A EGP 30B EGP 30C EGP 30D EGP 30F EGP 30G UNITS Maximum , : Vf T a = 25°C T a =125°C Ir 0.95 5.0 100 50 95 1.25 V nA ns trr Cj 75 PF (1
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EGP 30 D EGP30A EGP30G 30CTC/10

egp 100

Abstract: EGP15A reverse recovery time (Note 1) EGP 15A EGP 15F 1.00 EGP 15G 1.25 EGP 15J EGP 15K , 25°C ambient temperature unless otherwise specified. Parameter Symbol symbol EGP 15A EGP 15B EGP 15C EGP 15D EGP 15F EGP 15G EGP 15J EGP 15K EGP 15M Unit V Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 600 800 , Method) VDC 50 100 150 200 300 400 600 800 1000 V Typical thermal
Leshan Radio Company
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EGP15A EGP15G EGP15J MIL-S-19500 EGP15J---M EGP15A---G

egp 100

Abstract: EGP30A 25 ambient temperature unless otherwise specified. EGP 30B EGP 30C EGP 30D EGP 30F EGP 30G Symbols EGP 30A VRRM 50 100 150 200 300 400 V VRMS 35 70 105 140 210 280 V VDC 50 100 150 200 300 400 V , voltage Maximum reverse current Type junction capacitance - 243 - EGP 30B EGP 30C EGP 30D EGP 30F EGP 30G Unit IF = 3.0A VF TA= 25 TA=100 IR 10 100 µA
SIYU
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EGP30F DO-27

egp 100

Abstract: EGP50A DO-27 2.Maximum Ratings TYPE NUMBER Symbols Units EGP 50B EGP 50C EGP 50D EGP 50F EGP 50G 50 100 150 200 300 400 Maximum repetitive peak reverse , blocking voltage VDC V 50 100 150 200 300 400 IF(AV) A 5.0 IFSM A , Current,8.3ms single half-wave superimposed on rated load(JEDEC method) V EGP 50A Operating , voltage at5.0A Maximum DC reverse Ta=25 current at rated DC Ta=100 blocking voltage Maximum reverse
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EGP50A EGP50G EGP50B EGP50C EGP50D EGP50F
Abstract: "ƒ ambient temperature unless otherwise specified. EGP 20B EGP 20C EGP 20D EGP 20F EGP 20G å•ä½ Symbols EGP 20A VRRM 50 100 150 200 300 400 V VRMS 35 70 105 140 210 280 V VDC 50 100 150 200 300 400 V , EGP 20B EGP 20C EGP 20D EGP 20F EGP 20G å•ä½ Unit IF = 2.0A VF TA= 25â"ƒ TA=100â"ƒ IR 10 100 µA trr 50 nS IF=0.5A IR=1.0A IRR=0.25A MAX. Reverse SIYU
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diode EGP 30

Abstract: EGP10G at 25°C ambient temperature unless otherwise specified. SYMBOLS EGP 10A EGP 10B EGP 10C EGP 10D EGP 10F EGP 10G UNITS VRRM VRMS 50 100 150 200 300 400 V 35 70 105 140 210 280 V *Maximum DC blocking voltage VDC 50 100 150 , °C ambient temperature unless otherwise specified. EGP 10A EGP 10B EGP 10C EGP 10D EGP 10F EGP 10G SYMBOLS Condition *Maximum instantaneous forward voltage VF IF =1.0A TA= 25
SIYU
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EGP10D EGP10F diode EGP 30 EGP10B DO-41
Abstract: . Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 EGP 30J EGP , µA 10.0 200 50 50 EGP 30M 75 40 ns PF EGP30A thru EGP30M 2.Ratings and , V Maximum DC blocking voltage VDC 50 100 150 200 300 400 600 800 , temperature range EGP 30A EGP 30A EGP 30B EGP 30B EGP 30C EGP 30C EGP 30D EGP 30D EGP 30F EGP 30F EGP 30G EGP 30G EGP 30K EGP 30K 800 EGP 30M EGP 30M 1000 Leshan Radio Company
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DO-210AD WI-250 DO-201AD D0-201AD

EGP 20D

Abstract: EGP20C temperature unless otherwise specified. SYMBOLS EGP 20A EGP 20B EGP 20C EGP 20D EGP 20F EGP 20G UNITS Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 , specified. SYMBOLS Maximum instantaneous forward voltage at 2.0A VF EGP 20B EGP 20C EGP 20D 0.95 EGP 20F EGP 20G 1.25 UNITS V IR 5.0 100 µA Maximum reverse , blocking voltage VDC 50 100 150 200 300 400 V Maximum average forward rectified
General Semiconductor
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DO-204AC EGP 20D MIL-STD750

EGP10A

Abstract: EGP10M otherwise specified. Parameter Symbol symbol EGP 10A EGP 10B EGP 10D EGP 10G EGP 10J EGP 10K EGP 10M Unit Maximum repetitive peak reverse voltage VRRM 50 100 200 , 10A EGP 10B EGP 10D 1 1.25 trr EGP 10J EGP 10K 1.7 5.0 100 IR CJ , 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V , TA = 55° C IR(AV) 100 µA Typical thermal resistance (Note 2) RJA 55 ­50 to +150
Leshan Radio Company
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EGP10M
Abstract: , resistive or inductive load. For capacitive load, derate current by 20% EGP EGP EGP Type Number 10A 10B 10D EGP 10F EGP 10G EGP 10J EGP 10K Units Maximum Recurrent Peak Reverse Voltage 50 100 200 300 400 600 800 V Maximum RMS Voltage 35 70 140 210 280 420 560 V Maximum DC Blocking Voltage 50 100 200 300 400 600 , =125°C 1.0 3 0 .0 0 .9 5 A A 1.7 1.25 5 .0 100 .0 Maximum Reverse Recovery Time ( Note 1 ) Tj -
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EGP10K 35S4L

EGP20A

Abstract: EGP20F Voltage Maximum DC Blocking Voltage Symbol EGP 20A VRRM VRMS VDC EGP 20B EGP 20D EGP 20F EGP 20G EGP 20J EGP 20K Units 50 35 50 100 70 100 200 140 200 300 , ( Note 2 ) Typical Thermal Resistance (Note 3) 0.95 1.25 5.0 100 1.7 50 Trr Cj 40 , GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) -1.0A 1cm 100 RESISTIVE OR INDUCTIVE LOAD 0.375" (9.5mm) LEAD LENGTH 2.0 1.0 0 0 25 50 75 100 125
Taiwan Semiconductor
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EGP20K EGP20A-EGP20D WIDTH-300 EGP20F-EGP20K
Abstract: Forward Voltage @ 2.0A EGP 20A EGP 20B EGP 20D EGP 20F EGP 20G EGP 20J EGP 20K Units 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 600 420 600 , " (9.5mm) LEAD LENGTH 2.0 1.0 0 0 25 50 75 100 125 150 175 o PEAK , FORWARD SURGE CURRENT 1 Tj=125 0C 0.1 Tj=75 0C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 45 30 50 15 0 1 100 10 Taiwan Semiconductor
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Abstract: , according to IEC publication No. 134 EGP EGP EGP EGP EGP EGP EGP EGP 50A 50B 50D 50F 50G 50J 50K 50M 100 , 35 70 140 210 280 420 560 700 50 100 200 300 400 600 800 , MHz and reverse voltage of 4VDC 75 ns 100 pF IF = 0.5 A ; IR = 1 A ; IRR = 0.25 A 65 pF , 75 100 125 150 175 0J P5 0A -E G EG P5 -E G P5 0M EG 0K 1 10-1 Tj , , junction capacitance (pF) IFSM , peak forward surge current (A) 250 150 100 50 250 200 -
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EGP50M EGP50

EGP10A

Abstract: EGP10F , resistive or inductive load. For capacitive load, derate current by 20% Symbol EGP EGP EGP Type Number 10A 10B 10D Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 Maximum RMS Voltage VRMS 35 70 140 Maximum DC Blocking Voltage 50 100 200 VDC EGP EGP EGP EGP EGP Units 10F 10G 10J 10K 10M , INDUCTIVE LOAD 0.375" (9.5mm) LEAD LENGTH 0.5 0 0 25 50 75 100 125 150 175 o , FORWARD SURGE CURRENT 30 20 Tj=150 0C 100 Tj=100 0C 10 1 Tj=25 0C 0.1 0.01 0
Taiwan Semiconductor
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EGP10A-EGP10D

EGP20A

Abstract: EGP20G ,resistive or inductive load. For capacitive load,derate current by 20%.) Symbols EGP 20A EGP 20B EGP 20D EGP 20F EGP 20G EGP 20J EGP 20K EGP 20M 50 100 200 300 400 600 800 1000 35 70 140 210 280 420 480 700 50 100 200 300 , 1.7 Volts 5.0 IR A 100 TA=100 C Maximum Reverse Recovery Time(Note1) Units , RECOVERY TIME CHARACTERISTIC TJ=100 C TJ=25 C INSTANTANEOUS FORWARD V
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EGP20M EGP20A-EGP20G EGP20J-EGP20M EGP20A-EGP20F

DO-210AD

Abstract: DO-210 Ratings Parameter Symbol symbol at 25°C ambient temperature unless otherwise specified. EGP EGP EGP EGP EGP EGP EGP EGP EGP Unit 30A 30B 30C 30D 30F 30G 30J 30K 30M 50 100 150 200 300 400 600 , average forward rectified current 0.375" (9.5mm) lead length at TA = 55°C VDC 50 100 150 , 25°C) (Rated dc Voltage, TJ = 125°C) IR EGP EGP EGP EGP EGP EGP EGP EGP EGP 30A 30B 30C 30D 30F 30G 30J 30K 30M 0.95 1.25 1.70 V µA 10.0 200 50 Typical reverse recovery time
Leshan Radio Company
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DO-210 diode EGP 30D
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