500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

ef5 transistor

Catalog Datasheet MFG & Type PDF Document Tags

OF IC 723 linear regulator

Abstract: TA 7230 P PRECISION VOLTAGE REGULATOR NJM723 T he NJM723 is a Precision M onolithic Voltage R egulator. T he device consists of a tem perature-com pensated reference am plifier, erro r am plifier, pow er-series pass transistor and current-lim it circuitry. A dditional NPN or PN P pass elem ents m ay be used when output currents exceeding 150mA are required. In addition to the above, the device features low , f = 0 f= 5 0 ~ 1 0 k H z, C r EF=5* i F ~ 20 âT aâ7 5 °C Rsc= i o n , V OUT = 0 Min. _ -
-
OCR Scan
OF IC 723 linear regulator TA 7230 P 723 voltage regulator ic NJM723M
Abstract: Q1 R EFSE L R5 Zo = 50 R2 VC C V CC nc FOR CE_LOW nc VCC VEE VC C QR EF5 QR EF4 , C1 15pF 20 QR EF5 QRE F4 FOR CE_LOW VEE VC C QRE F0 QRE F1 VC C XTAL_IN XTAL_OU T R EFC LK R EFSEL VEE QR EF5 Z o = 50 VC C 20 VC C R ec eiv er 30 29 28 27 26 , temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the , Transistor Count The transistor count for ICS843N571I is: 22,466 ICS843N571AKI REVISION A JULY 16, 2013 Integrated Device Technology
Original
N1302-03 100MH 125MH
Abstract: datasheet to ensure the logic control inputs are properly set. R1 QRE F0 VC C VC C V CC QR EF5 QRE F4 FOR CE_LOW 20 R ec eiv er Z o = 50 U1 VCC 40 39 38 37 36 35 34 33 32 31 nc VCC VEE VC C QR EF5 QR EF4 VC C V CC nc QR EF5 VC C VC C QR EF 3 QR EF 2 VCC F REQSE L VCC VCC VCC QD 0 nQC QC 30 29 28 , the device. The maximum recommended junction temperature is 125°C. Limiting the internal transistor , 0 37.7°C/W 1 31.6°C/W 2.5 28.8°C/W Transistor Count The transistor count for ICS843N571I is: 22 Integrated Device Technology
Original
Abstract: Q1 R EFSE L R5 Zo = 50 R2 VC C V CC nc FOR CE_LOW nc VCC VEE VC C QR EF5 QR EF4 , C1 15pF 20 QR EF5 QRE F4 FOR CE_LOW VEE VC C QRE F0 QRE F1 VC C XTAL_IN XTAL_OU T R EFC LK R EFSEL VEE QR EF5 Z o = 50 VC C 20 VC C R ec eiv er 30 29 28 27 26 , temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the , Transistor Count The transistor count for ICS843N571I is: 22,466 ICS843N571AKI REVISION A JULY 31, 2013 Integrated Device Technology
Original
ICS843N571BI
Abstract: VC C V CC nc FOR CE_LOW nc VCC VEE VC C QR EF5 QR EF4 U1 VCC X1 25MHz8 p F 1 R ec eiv er 40 39 38 37 36 35 34 33 32 31 VC C V CC C1 15pF 20 QR EF5 QRE F4 FOR CE_LOW VEE VC C QRE F0 QRE F1 VC C XTAL_IN XTAL_OU T R EFC LK R EFSEL VEE QR EF5 , °C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond wire and bond , 2.5 37.7°C/W 31.6°C/W 28.8°C/W Transistor Count The transistor count for ICS843N571I Integrated Device Technology
Original

K0852

Abstract: marking TI08 7sâ'"S ' S/â'" h Compound Transistor GN1L4L » m o/nM (Ri = 47 kfì, R2 = 22 kÃ) iC o GA1L4L 'J / >J TfêJBTë W-mm Wt : mm) M^Û^ÃÃ'fê (Ta = 25 °C Marking II s SE # fi n i/ J 9 â  -" , - 4 14 1 m m g m fiff üa ¡1(0138)52 -1177 Â¥ Itt 5E Ja Ef5 (¡1 (0552) 24 â'" 4 14 1 S £ Ja a m
-
OCR Scan
K0852 marking TI08 F0534
Abstract: 14] N/C Vfb[T n/ c Ã7] Vc IS N Ef5~ ES [T 7 ] V ref V fb [ T 7 ] vcc I , in a single point ground. The transistor and 5k potentiometer are used to sam­ ple the -
OCR Scan
UC1842A/3A/4A/5A UC3842/3/4/5 UC1844A UC1842A UC1843A UC1845A

smd TRANSISTOR 2F6

Abstract: sot223 transistor p38 transistor rises at a rate of dv/dt = 50µA/C1, until reaching the preset limit. If there is a high load
PMC-Sierra
Original
smd TRANSISTOR 2F6 sot223 transistor p38 transistor smd ad p28 yb4 bridge diode TRANSISTOR SMD K27 w31 smd transistor PM5316/PM5310 PMC-1991245 SPECTRA-4X155

M50954

Abstract: M50954-XXXSP Pull-down voltage , Input This is the input voltage pin for the pull-down transistor of ports PO, P1, P4 , port. Output structure is high-voltage P-channel open drain. A pull-down transistor is built in between , tranfer B516^ Register to latch tranfer 1 1653,6 ^ 1AA4.6 1 AA4,6 I) 1 EF5,6 I T = 8192/i s (64 XI28 , output 5-0 * High voltage P-channel transistor Fig.18 Block diagram of port P0~P6 (single-chip mode
-
OCR Scan
M50954-XXXSP M50955-XXXSP M50954 JB 2256 M50955 mitsubishi M507 M50954XXXSP M50754-XXXSP/FP/ M50954-XXXSP/FP/ M50955-XXXSP/FP/GP M50754-XXXSP

smd transistor M21

Abstract: smd M21 output transistor of each port latch Is turned off, so it is becomes VEE level ("L") by the pull-down , timer 4 external clock input * : High-breakdown-voltage P-channel transistor Note. The dimmer signal , ,6 Ij 1 EF5,6 T=8192/iS '-when bit 7 01 PWML is transfer t-;-»1 from register to latch is
-
OCR Scan
TMP87CH21F TMP87CH21BF TMP87CM21F TMP87CH21DF TMP87CH21BDF TMP87CM21DF smd transistor M21 smd M21 M21 SMD rbs 3216 smd transistor A6a ldby 003 TMP87CH21/H21B/M21
Showing first 20 results.