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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

ef5 transistor

Catalog Datasheet MFG & Type PDF Document Tags

OF IC 723 linear regulator

Abstract: TA 7230 P PRECISION VOLTAGE REGULATOR NJM723 T he NJM723 is a Precision M onolithic Voltage R egulator. T he device consists of a tem perature-com pensated reference am plifier, erro r am plifier, pow er-series pass transistor and current-lim it circuitry. A dditional NPN or PN P pass elem ents m ay be used when output currents exceeding 150mA are required. In addition to the above, the device features low , f = 0 f= 5 0 ~ 1 0 k H z, C r EF=5* i F ~ 20 âT aâ7 5 °C Rsc= i o n , V OUT = 0 Min. _ -
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OF IC 723 linear regulator TA 7230 P 723 voltage regulator ic NJM723M
Abstract: Q1 R EFSE L R5 Zo = 50 R2 VC C V CC nc FOR CE_LOW nc VCC VEE VC C QR EF5 QR EF4 , C1 15pF 20 QR EF5 QRE F4 FOR CE_LOW VEE VC C QRE F0 QRE F1 VC C XTAL_IN XTAL_OU T R EFC LK R EFSEL VEE QR EF5 Z o = 50 VC C 20 VC C R ec eiv er 30 29 28 27 26 , temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the , Transistor Count The transistor count for ICS843N571I is: 22,466 ICS843N571AKI REVISION A JULY 16, 2013 Integrated Device Technology
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N1302-03 100MH 125MH

ics43n571

Abstract: datasheet to ensure the logic control inputs are properly set. R1 QRE F0 VC C VC C V CC QR EF5 QRE F4 FOR CE_LOW 20 R ec eiv er Z o = 50 U1 VCC 40 39 38 37 36 35 34 33 32 31 nc VCC VEE VC C QR EF5 QR EF4 VC C V CC nc QR EF5 VC C VC C QR EF 3 QR EF 2 VCC F REQSE L VCC VCC VCC QD 0 nQC QC 30 29 28 , the device. The maximum recommended junction temperature is 125°C. Limiting the internal transistor , 0 37.7°C/W 1 31.6°C/W 2.5 28.8°C/W Transistor Count The transistor count for ICS843N571I is: 22
Integrated Device Technology
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ics43n571
Abstract: Q1 R EFSE L R5 Zo = 50 R2 VC C V CC nc FOR CE_LOW nc VCC VEE VC C QR EF5 QR EF4 , C1 15pF 20 QR EF5 QRE F4 FOR CE_LOW VEE VC C QRE F0 QRE F1 VC C XTAL_IN XTAL_OU T R EFC LK R EFSEL VEE QR EF5 Z o = 50 VC C 20 VC C R ec eiv er 30 29 28 27 26 , temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the , Transistor Count The transistor count for ICS843N571I is: 22,466 ICS843N571AKI REVISION A JULY 31, 2013 Integrated Device Technology
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ICS843N571BI
Abstract: VC C V CC nc FOR CE_LOW nc VCC VEE VC C QR EF5 QR EF4 U1 VCC X1 25MHz8 p F 1 R ec eiv er 40 39 38 37 36 35 34 33 32 31 VC C V CC C1 15pF 20 QR EF5 QRE F4 FOR CE_LOW VEE VC C QRE F0 QRE F1 VC C XTAL_IN XTAL_OU T R EFC LK R EFSEL VEE QR EF5 , °C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond wire and bond , 2.5 37.7°C/W 31.6°C/W 28.8°C/W Transistor Count The transistor count for ICS843N571I Integrated Device Technology
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K0852

Abstract: marking TI08 7sâ'"S ' S/â'" h Compound Transistor GN1L4L » m o/nM (Ri = 47 kfì, R2 = 22 kÃ) iC o GA1L4L 'J / >J TfêJBTë W-mm Wt : mm) M^Û^ÃÃ'fê (Ta = 25 °C Marking II s SE # fi n i/ J 9 â  -" , - 4 14 1 m m g m fiff üa ¡1(0138)52 -1177 Â¥ Itt 5E Ja Ef5 (¡1 (0552) 24 â'" 4 14 1 S £ Ja a m
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K0852 marking TI08 F0534
Abstract: 14] N/C Vfb[T n/ c Ã7] Vc IS N Ef5~ ES [T 7 ] V ref V fb [ T 7 ] vcc I , in a single point ground. The transistor and 5k potentiometer are used to sam­ ple the -
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UC1842A/3A/4A/5A UC3842/3/4/5 UC1844A UC1842A UC1843A UC1845A

smd TRANSISTOR 2F6

Abstract: sot223 transistor p38 transistor rises at a rate of dv/dt = 50µA/C1, until reaching the preset limit. If there is a high load
PMC-Sierra
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smd TRANSISTOR 2F6 sot223 transistor p38 transistor smd ad p28 yb4 bridge diode TRANSISTOR SMD K27 w31 smd transistor PM5316/PM5310 PMC-1991245 SPECTRA-4X155

M50954

Abstract: M50954-XXXSP Pull-down voltage , Input This is the input voltage pin for the pull-down transistor of ports PO, P1, P4 , port. Output structure is high-voltage P-channel open drain. A pull-down transistor is built in between , tranfer B516^ Register to latch tranfer 1 1653,6 ^ 1AA4.6 1 AA4,6 I) 1 EF5,6 I T = 8192/i s (64 XI28 , output 5-0 * High voltage P-channel transistor Fig.18 Block diagram of port P0~P6 (single-chip mode
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M50954-XXXSP M50955-XXXSP M50954 JB 2256 M50955 mitsubishi M507 M50954XXXSP M50754-XXXSP/FP/ M50954-XXXSP/FP/ M50955-XXXSP/FP/GP M50754-XXXSP

smd transistor M21

Abstract: smd M21 output transistor of each port latch Is turned off, so it is becomes VEE level ("L") by the pull-down , timer 4 external clock input * : High-breakdown-voltage P-channel transistor Note. The dimmer signal , ,6 Ij 1 EF5,6 T=8192/iS '-when bit 7 01 PWML is transfer t-;-»1 from register to latch is
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TMP87CH21F TMP87CH21BF TMP87CM21F TMP87CH21DF TMP87CH21BDF TMP87CM21DF smd transistor M21 smd M21 M21 SMD rbs 3216 smd transistor A6a ldby 003 TMP87CH21/H21B/M21
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