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Part Manufacturer Description Datasheet BUY
S71KL512SC0BHV000 Cypress Semiconductor IC 512MB FLASH 64MB DRAM 24FBGA visit Digikey
QMS-078-01-SL-D-RA-MG Samtec Inc Board Connector, 156 Contact(s), 2 Row(s), Male, Right Angle, 0.025 inch Pitch, Solder Terminal, Guide Pin, Black Insulator, ROHS COMPLIANT visit Digikey
QMS-052-01-SL-D-RA-MG-K Samtec Inc Board Connector, 104 Contact(s), 2 Row(s), Male, Right Angle, Surface Mount Terminal, Plug, ROHS COMPLIANT visit Digikey
QMS-026-02-S-D-RA-MG Samtec Inc Board Connector, 52 Contact(s), 2 Row(s), Female, Right Angle, 0.025 inch Pitch, Solder Terminal, Guide Pin, Black Insulator visit Digikey
QMS-052-01-SL-D-RA-MG Samtec Inc Board Connector, 104 Contact(s), 2 Row(s), Male, Right Angle, 0.025 inch Pitch, Solder Terminal, Guide Pin, Black Insulator, ROHS COMPLIANT visit Digikey
QSS-025-01-L-D-RA-MTI Samtec Inc Board Connector visit Digikey

dram 512mb

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: without having to increase their size and weight. NOR + pSRAM 64Mb 512Mb ­ ­ ­ ­ 16Mb 128Mb NOR +DRAM 512Mb 512Mb 512Mb 512Mb 256Mb 1Gb ­ ­ ­ ­ ­ ­ 1Gb 1Gb 768Mb , technology from Spansion. The 512Mb NOR, 512Mb DDR DRAM and 512Mb MirrorBit® ORNANDTM memory solution is , DRAM + ORNAND 512Mb 512Mb 512Mb 1Gb 512Mb 512Mb ­ ­ 15x15mm Now 15x15mm Now ­ , ARCHITECTURE NOR FLASH MIRRORBIT® ORNAND TM FLASH DRAM pSRAM Spansion's Package-on-Package Freescale Semiconductor
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152-Ball 152-Ball PoP 200-ball Spansion NAND Flash 512MB NOR FLASH ARM1136JF-S MX31L ARM1136JF-STM 1-866-SPANSION
Abstract: XDRTM DRAM HDTV3D 512Mb XDR DRAM 512Mb XDR DRAM3.2Gbps, 4.0Gbps, 4.8Gbps x16I/ODRAM6.4GB/s, 8.0GB/s, 9.6GB/s PCDDR2 SDRAM4 6 XDR DRAM DRAM 10.0 GB/s x16 9.6GB/s 3.2Gbps , DRSL 7.0 6.4GB/s DRAM 6.4GB/s, 8.0GB/s, 9.6GB/s 6.0 5.0 , /ODRSL200V 0.6GB/s 0.8GB/s DDR333 104FBGA DDR2-667 DDR2-800 XDR DRAM XDR DRAM XDR DRAM , ://www.elpida.com/ja XDR DRAM XDR DRSL (Differential Rambus Signaling Levels) ODR (Octal Data Rate Elpida Memory
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DDR400 J0428EA0 DDR3-1333 DDR2-1066 ASIC 104-FBGA XDR Rambus XDR DRAM 16I/ODRAM6 400MH 500MH 600MH I/ODRSL200V
Abstract: Technical Bulletin Hifn, Inc., 750 University Avenue, Los Gatos, CA 95032 Phone: 408-399-3500 Fax: 408-399-3501 Web: http://www.hifn.com 4450/8450 DDR2 DRAM 512MB Issue Introduction The 4450 and 8450 devices support DDR2 SDRAM memory arrays of 64 megabytes, 128 megabytes, 256 megabytes, and 512 megabytes , circuit diagram below illustrates this solution: TB-0022-00 4450/8450 DDR2 512MB Support ­ November 21 , the relationship between power-on reset (POR_N), CKE, and WE_N. TB-0022-00 4450/8450 DDR2 512MB Hifn
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SSTL-18 hifn 8450 44-50 4450
Abstract: Density 512Mb Device 256Mb S72WS256PD0 (MCP) 1024Mb 512Mb NAND Flash Density 512Mb DRAM Density 512Mb 256Mb X S72WS256PD0 (POP) 128Mb ORNANDTM Flash Density X , ORNAND Flash Memory RAS# CAS# BA0 BA1 CKE WE# CE# A0-A12 VCC VCCQ 512Mb DDR DRAM , Flash with 512-Mb (OR)NAND on Bus 1 and 512-Mb DRAM on Bus 2 137-ball Fine-Pitch Ball Grid Array (Top , 256Mb DRAM, 512Mb NAND Flash FF = 512Mb DRAM, 512Mb NAND Flash E0 = 256Mb DRAM, No Data Flash PROCESS Spansion
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S72WS-P BGA 130 MCP NAND DDR JEP95 Flash MCp nand DRAM 137-ball DSA00272754 S72WS512PEF N-ADQ12
Abstract: 128Mb NAND Flash Density 512Mb 512Mb DRAM Density 256Mb 128Mb X (DDR) X (DDR) X (SDR) X X X X X , # CAS# BA0 BA1 CKE WE# CE# A0-A12 VCC VCCQ 512Mb DDR DRAM MEMORY CLK CLK# DQS0 DQS1 LDQM UDQM , Bus 1 and 512-Mb DRAM on Bus 2 MCP Connection Diagram 137-ball Fine-Pitch Ball Grid Array (Top View , ORNAND FLASH DENSITY D0 = 128 Mb DRAM, No Data Flash EF = 256Mb DRAM, 512Mb NAND Flash FF = 512Mb DRAM, 512Mb NAND Flash E0 = 256Mb DRAM, No Data Flash PROCESS TECHNOLOGY P = 90 nm, MirrorBitTM Technology Spansion
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S72WS512PFFJF9GH BGA 15X15 12X12 POP PACKAGE bta 137 N-ADQ14 NAND01
Abstract: 512Mb DDR Synchronous DRAM P3S12D30/40ETP DESCRIPTION P3S12D30ETP is a 4-bank x 16,777,216 , 133MHz 133MHz * CL = CAS(Read) Latency 512Mb DDR Synchronous DRAM P3S12D30/40ETP PIN , : Ground : Ground for Output Vref : Reference Voltage 512Mb DDR Synchronous DRAM P3S12D30/40ETP , Memory Style (DRAM) MIRA DRAM 512Mb DDR Synchronous DRAM P3S12D30/40ETP DQ0 - 15 UDQS,LDQS I , 512Mb DDR Synchronous DRAM P3S12D30/40ETP BASIC FUNCTIONS The P3S12D30/40ETP provides basic functions Deutron Electronics
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P3S12D40ETP 200MH A0-12
Abstract: ://www.deutron.com.tw 512Mb DDR Synchronous DRAM P3S12D30/40EF DESCRIPTION P3S12D30EF is a 4-bank x 16,777,216 , ) Latency 512Mb DDR Synchronous DRAM P3S12D30/40EF 60-Ball FBGA Ball Assignment 512Mb DDR Synchronous DRAM P3S12D30/40EF 512Mb DDR Synchronous DRAM P3S12D30/40EF x8 x16 CLK, /CLK : Master , Interface S:SSTL_3, _2 Memory Style (DRAM) Mira DRAM 512Mb DDR Synchronous DRAM P3S12D30/40EF DQ0 - , Memory Style (DRAM) Mira DRAM 512Mb DDR Synchronous DRAM P3S12D30/40EF BASIC FUNCTIONS The Deutron Electronics
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P3S12D40EF
Abstract: å‰uæ° ç¾¤æ• Accountability / Innovation / Teamwork 04 Mobile DRAM 512Mb LPDDR (PKG , 2014 PRODUCT SELECTION GUIDE Mobile DRAM Specialty DRAM Code Storage Flash Memory Winbond , . Winbondâ'™s product portfolio, consisting of Mobile DRAM, Specialty DRAM and Code Storage Flash, is , Kong, Israel, Japan and the US. CONTENTS Mobile DRAM Low Power SDR SDRAM Low Power DDR SDRAM Low Power DDR2 SDRAM Pseudo SRAM KGD Specialty DRAM 03 05 06 07 08 SDRAM DDR SDRAM DDR2 Winbond Electronics
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W25R128FV W25Q128JV W25R128F USON-8 W25Q128F W25Q80DL
Abstract: K4S510432D K4S510832D K4S511632D Synchronous DRAM 512Mb D-die SDRAM Specification 54 TSOP-II , K4S510832D K4S511632D Synchronous DRAM Table of Contents 1.0 Features , .16 2 of 16 Rev. 1.11 August 2008 K4S510432D K4S510832D K4S511632D Synchronous DRAM , of 16 Rev. 1.11 August 2008 K4S510432D K4S510832D K4S511632D Synchronous DRAM 32M x 4Bit , K4S510432D K4S510832D K4S511632D Synchronous DRAM 4.0 Package Physical Dimension (0.80) (0.50) #54 #28 Samsung Electronics
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K4S511632D-UC A10/AP
Abstract: Graphics DRAM Components 9 Mobile-SDR/DDR Density Type 512Mb MDDR 1Gb 2Gb 4Gb , in memory technology for 16 straight years. Its DRAM, flash and SRAM products are found in , and a range of embedded and removable flash storage products. Markets DRAM SRAM FLASH , DRAM FLASH Pages 14-16 FLASH www.samsung.com/semi/flash · SLC Flash · MLC Flash · SD and , / II / II+ SRAM MULTI-CHIP PACKAGE Pages 21-22 · NOR & UtRAM · NOR & DRAM Fusion Memory Samsung Semiconductor
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K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C BR-10-ALL-001
Abstract: ECC, PC97compliance, SDRAM, as well as support for up to 512MB DRAM and 2MB cache, the VP2 is a , and USB technologies. · ECC · 2MB cache support · 512MB DRAM support · PC97 Compliant · SDRAM , class. The VPX supports up to 512MB of SDRAM, EDO, BEDO and FPM DRAM types, and up to 2MB of L2 cache , USB technologies. · 75 MHz asynchronous local bus · 2MB cache · 512MB DRAM support · PC 97 · , 208 PQFP DRAM ISA/IDE BIOS/ROM PC98 Compliance The VIA Apollo MVP3 for desktops, features VIA Technologies
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APOLLO vt82c580 vpx VT82C585VPX SFF-8038 MVP3 VT82C587VP VT82C596 DMA/33 100MH 512KB 256MB
Abstract: . 1.2.1 Memory Subsystem The AlphaPC64 memory subsystem supports DRAM memory arrays of 16MB to 512MB , Layouts Maximum 512MB DRAM Layout - Populated with 16M x 36 SIMMs DRAM 2 - 64MB SIMM memData64 - 95 + , Parity J11 DRAM 1 - 64MB SIMM memData32 - 63 + Parity J10 Bank 0 256MB 512MB DRAM 2 - , Minimum DRAM 16MB plus parity Maximum DRAM 512MB plus parity Memory (ROM) 1MB flash ROM External , -bit Data Path b_addr - Longword Parity b_mctl - 16MB to 512MB - 2 Banks LJ04129A.AI5 1­2 -
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N8242PC S82378ZB intel 865 MOTHERBOARD CIRCUIT diagram 865 intel MOTHERBOARD CIRCUIT diagram N8242
Abstract: banks of DRAMs up to 512MB. The DRAM controller supports Standard Page Mode DRAM, EDO-DRAM and Burst , Cntlr. MA DRAM (512MB, 8bank) (208PQFP) CD IDE Bus VT82C576M PCI Controller PCI , . 4. Enhanced DRAM Controller The VT82C570M supports eight banks of DRAMs up to 512MB. The eight , . 7 3.4. DRAM Post Write Buffers. 8 3.5. Concurrent DRAM Writeback . 9 3.6. Cacheable Region VIA Technologies
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VT82C575M VT82C577M VT82C416 VT82C41 CD4047 pin diagram vt82c570 VIA Apollo Master P54CTM K86TM
Abstract: Rate Peak Throughput 512Mb DDR2 512MB DRAM Speed Grade 1Gb DDR2 2GB Module Speed , FB-DIMM4.8Gbps 18DIMM FB-DIMM JEDECDDR2 SDRAM Memory Controller DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM AMB AMB AMB DRAM DRAM DRAM DRAM DRAM DRAM DRAM 8 DIMM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM Elpida Memory
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J0632E80 PC2-5300F D-RAM ddr2 DDR2 memory organization dram pc2-5300 FB-DIMM667M 240DIMM36 512MB4GB
Abstract: REV 1.4 Oct. 2011 CONSUMER DRAM NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM , CONSUMER DRAM NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM Pin Configuration ­ 400 mil , Oct. 2011 CONSUMER DRAM NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM Block Diagram (64Mb x 8) 6 REV 1.4 Oct. 2011 CONSUMER DRAM NT5DS64M8DS NT5DS32M16DS 512Mb DDR , configured as a quad-bank DRAM. The 512Mb DDR SDRAM uses a double-data-rate architecture to achieve Nanya Technology
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DDR-333 DDR500 DDR-400/500
Abstract: containing 536,870,912 bits. It is internally configured as a qual-bank DRAM. The 512Mb chip is organized as , CONSUMER DRAM NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM Ordering Information , CONSUMER DRAM NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM Input / Output Functional , Jan. 2012 CONSUMER DRAM NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM Block Diagram (64Mb x 8) 6 REV 1.6 Jan. 2012 CONSUMER DRAM NT5DS64M8DS NT5DS32M16DS 512Mb DDR Nanya Technology
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Abstract: 0.3 Jan. 2011 CONSUMER DRAM NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM Preliminary , ,870,912 bits. It is internally configured as a qual-bank DRAM. The 512Mb chip is organized as 16Mbit x , CONSUMER DRAM NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM Preliminary Edition Ordering , 3-3-3 3 REV 0.3 Jan. 2011 CONSUMER DRAM NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM , 4 REV 0.3 Jan. 2011 CONSUMER DRAM NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM Nanya Technology
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NT5DS32M16
Abstract: CONSUMER DRAM NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM Description Nanya 512Mb SDRAMs , as a qual-bank DRAM. The 512Mb chip is organized as 16Mbit x 8 I/O x 4 bank or 8Mbit x 16 I/O x 4 , 3-3-3 2.5-3-3 3-3-3 3 REV 1.1 Jul. 2011 CONSUMER DRAM NT5DS64M8DS NT5DS32M16DS 512Mb , A0-A9 4 REV 1.1 Jul. 2011 CONSUMER DRAM NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM , CONSUMER DRAM NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM Block Diagram (32Mb x 16 Nanya Technology
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Abstract: REV 1.7 May. 2012 CONSUMER DRAM NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM , CONSUMER DRAM NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM Pin Configuration ­ 400 mil , CONSUMER DRAM NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM Input / Output Functional , May. 2012 CONSUMER DRAM NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM Block Diagram (64Mb x 8) 6 REV 1.7 May. 2012 CONSUMER DRAM NT5DS64M8DS NT5DS32M16DS 512Mb DDR Nanya Technology
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Abstract: http://www.deutron.com.tw 512Mb DDRII Synchronous DRAM P3R12E2GEU/F P3R12E3GEU/F Description , . Oct,2005 - 3 - Rev.1.0 512Mb DDRII Synchronous DRAM P3R12E2GEU/F P3R12E3GEU/F CONTENTS , . 65 Oct,2005 - 4 - Rev.1.0 512Mb DDRII Synchronous DRAM P3R12E2GEU/F P3R12E3GEU/F , and VDDL tied together. Oct,2005 - 6 - Rev.1.0 512Mb DDRII Synchronous DRAM P3R12E2GEU/F , Conditions. Oct,2005 - 8 - Rev.1.0 512Mb DDRII Synchronous DRAM P3R12E2GEU/F P3R12E3GEU/F AC Deutron Electronics
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P3R12E2/3GE/U
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