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89HT0832PZCHLG Integrated Device Technology Inc FCBGA-345, Tray visit Integrated Device Technology Buy
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diode sy 345

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Diode SY 345

Abstract: STR F 6234 Leiterplatte ist auszuschließen. Abb. Seitenansicht Leiterplatte SY 345/56 C 7 1 - Diode SY 345/8 L 2 - , defekt anszuwechgeln. Heben den originalen KZ 109 A wird vom EO Gera-langenberg die Leiterplatte SY 345/56 C 7 zur Deckung des Ersatzteilbedarfes angeboten. Vor dem Einbau der Leiterplatte SY 345/56 C 7 , befindlichen Leitungen sind ggf. lagemäßig so zu korri gieren, daß ein Anliegen an der Leiterplatte SY 345/56 C , KW-Vorkreisspule 1 345 6609 1 3 3 0 0 2 8 0 3 0 /0 1 KW-Vorkreisspule 2 346 6610 1.33.002804.0/01 kommt ab II
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diode sy 345

Abstract: diode SY 192 8451423 - Rach?olgetyp/-typen SY SY SY SY SY SY SY SY SY SY 345 / 0 ,5 K 345/0,5 L 345/ 1 K 345/ 1 L 345/ 2 K 345/ 2 L 345/ 4 K 345/ 4 L 345/ 6 L 345/ 8 L BDV-Nr. 8421467 8431460 - 8481461 - , 36o/1o 8421475 Seite 6, 1-2/89 Dioden: Vorgängertyp SY SY SY SY SY SY SY SY SY SY 335/0,5 K 335/o , Nachfolgetyp/- typen SC 3o7 C SC 3o7 D SC 3o8 C SC 3o8 D SC 308 B SC 3o9 D SC 3o9 B SD 345 SD 345 SD 347 SD 34S , Einsatz der Diode SZX 19/7,5 (Glasausführung, atehenà montiert) in der Position YD 7oo2 anstelle der Diode
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diode sy 171 10

Abstract: diode sy 171 SOURCE E-DRAIN DIODE RATINGS AND CHARACTERISTICS Sy mbol Characteristic / Test Conditions MIN TYP MAX UNIT Continuous Source Current (Body Diode) 95 Amps SM Pulsed Source Current1 (Body Diode) 380 Amps f 'SD Diode Forward Voltage2 (VQS = OV, ls = -lQ [Cont.]) 1.8 Volts Reverse Recovery Time (ls = -lD [Cont.] dls/dt = 1OOA/ps) 345 695 1200 ns Reverse Recovery Charge 14 28 56 Mc Sy » S< i :E OF 'ERATING AREA CHARACTERISTICS nbol Characteristic Test Conditions MIN TYP
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Diode SY 345

Abstract: pwm 8pin power supply (Vcc=5V) and one regulator output(Vout1=3.3V;IN1 terminal), theref ore an application sy s t em is protected system errors. Especially this is most suitable f or application sy s y t em , oscillator without peripheral dev ices ·8pin SOP package APPLICATION application sy s t em with , 1.5 2.8 mA ch1 output 3.15 3.30 3.45 1.90 2.00 2.10 Line regulation , : ·VF : Forward voltage drop of an external diode ·Vsat : Output saturation voltage of an external
Mitsubishi
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Diode SY 356

Abstract: SY 356 Bauelemente geändert: auf dem Chassis: VD 6031 von SY 345/05 ln SY 356/05L EDV-Nr. 84 5 1472 C 6042 von 220 ,u , VK-RUcklauftrennstufe durch eine Si-Diode SY 360/2 ersetzt. Damit der Polaritätswechsel des vertikalen Ablenketromes , . Zu diesem Zweck wird ein Elektrolytkondensator in Reihe aur Diode geschaltet, der aus der , zusätzlichen Bauelemente sind einschließlich RUcklaufkondensator und -diode auf der D7D-Ersatz-Lp Zelchnungs-Nr
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C6702 Diode SY 356 SY 356 sy356 34992 diode sy 345 C6042 2001/DBB C6701 S0339 R6705 R67G3

SAL 41

Abstract: rft mira diktat s die Inlandtypen SY 345 ersetzt. Anstelle D 5633 (BY 228) kommt die Reihenschaltung von zwei Dioden SY 345/8-L (D 5632, D 5633) zum Einsatz. Die Chassis-Lp ist dafür konstruktiv schon vorbereitet. Für D 5634 (BYX 55/600) wird der Typ SY 345/6-L eingesetzt. Unabhängig davon entfällt seit Februar 1981 G , Bu 1004/2 rt erfolgen. Die Diode ist am Buchsenkontakt anzulöten. "C 0 L 0 R L U X 3010/11 , gekennzeichnet. Der Farbpunkt befindet sich an der oberen Kante über Anschlußpunkt 1 SY - Modul: IW IW IW IW IW
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SAL 41 rft mira diktat s Mitteilung VEB RFT Statron RFT Service Mitteilung robotron

"DIODE" SY 171 1 g

Abstract: diode sy 171 5 V DSS lD - l D [Cont.].VQS-1 5 V Rg = 0.6 46 123 66 Fall Time SOURCE-DRAIN DIODE , Diode) MIN TYP MAX 95 380 1.8 UNIT Amps Amps Volts i's jsM Pulsed Source Current1 (Body Diode) Diode Forward Voltage2 (VQS = OV, is = -lD [Cont.]) frr Reverse Recovery Time (ls = -lD [Cont.] dls/dt = 100A/|JS) Reverse Recovery Charge 345 695 1200 56 T rr 14 28 M c UNIT Watts Watts Amps ns E OPERATING AREA CHARACTERISTICS Sy nbol Characteristic Safe
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diode sy 171 diode sy 171 10 diode sy 170 APT40M42BFN APT35M42BFN APT40M42/35M42BFN MIL-STD-750

Diode SY 345

Abstract: transistor TIP 320 . Each switch consists of an infrared emitting diode facing an NPN phototransistor across a .125" (3.18 , interference. [S T S OPTICAL ' 125 (a 1 8 >CENTERLINE H -.485 (12.32) r .110 (2.79) .425 (10.79) .345 , ) . INPUT DIODE Continuous Forward C u rre n t , . . 100 mWTM ELECTRICAL CHARACTERISTICS PARAMETER SY M B O L (T, = 25°C Unless Otherwise
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transistor TIP 320 1080min sy 320 diode ST2174 QVA11123 QVA11124 QVA11223 QVA11224 QVA11323

L207 DIODE

Abstract: Diode SY 345 SCHOTTKY BARRIER DIODE MODULE 66A/20~30v PE60QL02N PE60QL03N FEATURES °Three - Arms, Cathode Common to Base Plate ° Extremely Low Forward Voltage Drop â'¢> Low Power Loss, High Efficiency 8 High Surge Capability 43.7(1.72) -4i.Nl.65)- 3-4.5(.18)D[A u-'-|18.5(.73) 27.7(1.09) 17.5Ã.6Ã"Ï 26.0(1.05) â'"i_i _ 22(.87> 2505) p l20.7(.82)i. 10.Si.76r BASE PLATE MAXIMUM RATINGS Dimensions in mm (Inches) Approx. Net Weight : 65 Grams Voltage Rating \TYPE Sy:nbol'-v. ♦PE60QL02N PE60QL03N
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L207 DIODE l20-7 000212S

diode sy 345

Abstract: Repetitive peak reverse current tp = 2 ps; 8 = 0.001 per diode. tp = 100 ps Non-repetitive peak reverse current per diode. Storage temperature Operating junction temperature 345 - Rev 1.100 , VALUES Limiting values in accordance with the Absolute Maximum System (I EC 134). SY M B O L P A R A , conducting) Repetitive peak forward current per diode Non-repetitive peak forward current, per diode - , CO N D ITIO N S ^ t h j-hs Thermal resistance junction to heatsink per diode both diodes
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PBYR1545CTF 117-C

SMC - SY5120

Abstract: SMC SY313 High Capacity & Simple Choices Series SY 5 Port Rubber Seal Solenoid Valve SV SY SYJ , realased 1.2-1 CE Marking Compliant Products The SY series complies with the EMC Directive and the , . How to order valves Q SY CE marking compliant product Enter the standard part number How , . 1.2-46 to 1.2-51 P. 1.2-62 to 1.2-67 SV SY Base Mounted SYJ SX Single Valve P. 1.2-28 , sub-plate) · Interface regulator series ARBY3000/5000 (for series SY3000/5000/7000) SV SY High speed
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SMC - SY5120 SMC SY313 omron G71-OD16 SY7120 SY340 G71-OD16 SY9000 X20-Q X90-Q SY3000 SY5000 SY7000
Abstract: =-10V, ID=-30A * High Switching Speed Ì SY M BOL 2.Drain 1.Gate 3.Source Ì ORDERI N G , Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=-120A, VGS=0V Body Diode Reverse Recovery Time trr IF=-85A, dIF/dt=100A/µs Body Diode Reverse Recovery , 1200 900 230 50 60 20 160 200 240 -1.0 65 0.14 pF pF pF 345 360 nC nC nC ns Unisonic Technologies
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UTT120P06 UTT120P06L-TA3-T UTT120P06G-TA3-T QW-R502-728

diode sy 345

Abstract: T0220AB LIMITING VALUES Limiting values in accordance with the Absolute Maximum Sy tem (IEC 134) SYMBOL PARAMETER , Gate-source voltage Drain current (DC) Drain current (pulse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature , Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Source-drain diode , diode reverse recovery time Source-drain diode reverse recovery charge Internal drain inductance
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T0220AB PHP3055E 100A4
Abstract: ). . 240°C fo r 5 sec.'3-4'5 1 260°C for 10 sec.'3-« INPUT DIODE C ontinuous Forward , which consists of a gallium arsenide infrared light em itting diode and a high speed integrated , 1.5 V lF = 20 mA Reverse Leakage Current Ir â'" 10 nA VR= 3V INPUT DIODE , ELECTRICAL CHARACTERISTICS PARAMETER Output Current High SY M B O L ^H O MIN. TYP. MAX -
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H23L1 ST1614 ST1613 ST1241 ST1242 ST1245
Abstract: switch or in PWM applications. Ì SY M BOL 3.Drain 2.Gate 1.Source Ì ORDERI N G I N , =15V, VGS=10V, ID=5.8A Gate-Source Charge QGS Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD IS=1A Maximum Continuous Drain-Source Diode IS , ±100 V uA nA 1.9 3 V 22.5 34.5 28 43 A m m 680 102 77 820 pF pF pF Unisonic Technologies
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UT3404 UT3404L-AE3-R UT3404G-AE3-R QW-R502-146

TRANSISTOR BI 243

Abstract: .147 Si T 3.45 .315 2.6 NOM. .103 NOM. 3 NOTES: 1. INCH DIMENSIONS ARE DERIVED , light emitting diode coupled to a silicon photodarlington in a plastic housing. The packaging system is , ). . 240°C for 5 sec.(3A 5) . 260°C for 10 sec.M INPUT DIODE Continuous Forward Current , . . 150 mW'2 ELECTRICAL CHARACTERISTICS PARAMETER SY M B O L (T, - , . V lF = 60 mA V lR = 10itA INPUT DIODE vF Forward Voltage â'" â'" 1.0
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TRANSISTOR BI 243 H22A1/2/3 ST1340-01 ST1340-02 ST1609 H22A1 H22A2

2SK 1110

Abstract: hd1-M -DC5V 0 A T u rn -o ff tim e tof, (to ff ~ t d c o f f ) "1 " tf ) ns V tf V sd Diode* fo , U JI P O W E R M O S -F E T 1 1 1 1 1 1 1 1 1 1 1 1 1 ' / / y max. sy * * * *D , VsoCV) Forward Characteristics o f Reverse Diode A llo w ab le P ow er Dissipation vs. T c Rth C"C/W) Transient T herm al Im pedance S afe O perating Area 223Ô7T2 3104 345
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2SK 1110 hd1-M -DC5V 2SK1817-M A2-247
Abstract: load switch or in PWM applications. Ì 5 4 6 1 2 3 SOT-26 SY M BOL Drain , Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage , 30 1 20 1.9 3 22.5 34.5 28 42 680 102 77 820 pF 108 4.6 4.1 20.6 Unisonic Technologies
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UT6402 UT6402L-AE3-R UT6402G-AE3-R UT6402L-AG6-R UT6402G-AG6-R QW-R502-152

diode sy 345

Abstract: t04 sot 23 Repetitive Avalanche Energy O 0.21 mJ dv/dt Peak Diode Recovery dv/dt @ 5.5 V/ns Pd Total Power Dissipation , =1.4A @ Forward Transconductance - 3.2 - à VDS=30V,ID=1.4A © ciM Input Capacitance - 265 345 PF VGS , ("Miller") Charge - 3.2 - Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min , the MOSFET 'sM Pulsed-Source Current Q - â'" 22 VSD Diode Foiward Voltage © - - 1.5 V TJ=25°C,IS , Fig 4. Source-Drain Diode Forward Voltage 20 30 , Drain CUnat W lrf ^â'" ff \ â'¢ Ktes
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IRLM014A t04 sot 23 t04 mosfet t04 sot-23 250HA S0T-223

Diode KD 514

Abstract: B30C250 Verwendbarkeit zu prüfen sind. Ein Beispiel hierfür ist der Ersatz der Diode 1 N 914 und 1 N 4148. Statt des , sollte der billigste verweidbare Typ bestellt werden z. B. SY 360/1 statt SY 360/4* Es wurden möglichst , = Referenzdiode, ZSt = Stabilisator (Diode in Durchlaßrichtung betrieben), ZSp = Suppressordiode, ZP * * Planar-Z-Diode, LED » Leuchtdiode (auch Infrarot), C = Kapazitäts diode, Tu * Tunneldiode, Di = Diac; Spalte 4: G , GAY 64 SAY 12B GAY 64 GA 105 GAY 64 GAY 64 SY335/4K SY 360/14 SY 360/4 1N 4785 SY 360/4 KD 202 R 1 PM
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Diode KD 514 B30C250 GD507A DIODE OA-172 kyx 28 SY360
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