Top Results
| Part | Manufacturer | Description | Datasheet | BUY |
|---|---|---|---|---|
| PR207 | Texas Instruments | Power Management Solution for Spartan(TM)-II (Design 1) |  |
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| UC1612J | Texas Instruments | SILICON, RECTIFIER DIODE, CERDIP-8 | |
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| ISL99135BDRZ-T | Intersil Corporation | 35A DrMOS Module with Diode Emulation and PS4; 16; Temp Range: 0° to 70° |  |
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| ISL99125BDRZ-T | Intersil Corporation | 25A DrMOS Module with Diode Emulation and PS4; 16; Temp Range: 0° to 70° | |
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| ISL58315CRTZ-T13 | Intersil Corporation | High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° | |
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| ICM7218DIJIZ | Intersil Corporation | LED DRVR 64Segment 5V 28-Pin CDIP | |
diode r207
| Catalog Datasheet | MFG & Type | Document Tags | |
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diode r207Abstract: arc welder schematic 2FI200A-060(2x100A) FAST RECOVERY DIODE MODULE Outline Drawings, mm 600V / 100A 2 in one-package FAST RECOVERY DIODE MODULE Features · Short Reverse Recovery Time · Variety of Connection Menu · Insulated Type Applications · Arc-Welders · Free-Wheeling Diode R207 Inner Curcuit Schematic · High Speed Rectifiers Inner Circuit Symbol C N K D Maximum ratings and , RECOVERY DIODE MODULE Characteristics Output Current - Total Loss - Ambient Temperature Forward |
Fuji Electric Original |
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diode r207 arc welder schematic arc welder circuit sine wave SCHEMATIC diode-r207 600v 100a 50/60H AC1500 |
diode r207Abstract: diode-r207 2FI200A-060(2x100A) FAST RECOVERY DIODE MODULE Outline Drawings, mm 600V / 100A 2 in one-package FAST RECOVERY DIODE MODULE Features · Short Reverse Recovery Time · Variety of Connection Menu · Insulated Type Applications · Arc-Welders · Free-Wheeling Diode R207 Inner Curcuit Schematic · High Speed Rectifiers Inner Circuit Symbol C N K D Maximum ratings and , 2FI200A-060 (2x100A) FAST RECOVERY DIODE MODULE Characteristics Output Current - Total Loss - Ambient |
Fuji Electric Original |
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diode r207Abstract: fast reverse recovery time of LED 2FI200A-060(2x100A) FAST RECOVERY DIODE MODULE Outline Drawings, mm 600V / 100A 2 in one-package FAST RECOVERY DIODE MODULE Features · Short Reverse Recovery Time · Variety of Connection Menu · Insulated Type Applications · Arc-Welders · Free-Wheeling Diode R207 Inner Curcuit Schematic · High Speed Rectifiers Inner Circuit Symbol C N K D Maximum ratings and , * : With Thermal Compound 2FI200A-060 (2x100A) FAST RECOVERY DIODE MODULE Characteristics Output |
Fuji Electric Original |
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fast reverse recovery time of LED |
2FI300A-060Abstract: diode r207 / Power Modules (Diodes) Diode Modules 300V 300 volts class fast recovery diode modules , 600V 600 volts class fast recovery diode modules Device type 1FI150B-060 1FI250B-060 VRRM Volts , 0.22 0.12 0.068 R201 R205A R201 R205A R207 R207 Net mass Grams 210 210 180 110 180 110 380 380 , 2FI300A-060 600 1000V 1000 volts class fast recovery diode modules Device type VRRM VRSM Volts 1200 , 2FI50G-100C,N,D 1000 2FI100G-100C,N,D 1000 1200V 1200 volts class fast recovery diode for snubber |
Fuji Electric Original |
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R207 diode 1F60A 50X2 ESAL-01-01C 2FI300A 2FI50A-030C 2FI50F-030C 2FI100A-030C 2FI100F-030C 2FI50A-060C 2FI50F-060C |
CQ1265RTAbstract: CQ0765RT winding and Vcc winding, respectively, VFo and VFa are the diode forward voltage drops of the output , internal resistors are designed so that the maximum cathode voltage of diode D2 is about 2.8V, which , , and D1 to the reference pin of KA431. Then, Vo2 is determined by the zener diode breakdown voltage , the secondary diode during startup. For a fast build up of the output voltage, an offset is , . Then, Vo2 is determined by the zener diode breakdown voltage. Assuming that the forward 17 |
Fairchild Semiconductor Original |
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CQ1465RT CQ1265RT CQ0765RT cq1565rt cq1265rt schematic diagram cq0765 CQ0765RT circuit diagram FSCQ0565RT FSCQ0765RT FSCQ0965RT FSCQ1265RT FSCQ1465RT FSCQ1565RT |
CQ0765RT circuit diagramAbstract: CQ0765RT winding; VFo is the diode forward-voltage drop of the output winding; VFa is the diode forward-voltage , voltage of diode D2 is about 2.8 V, which occurs when all IFB flows through the internal resistors , into burst mode, when picture off signal is applied to Q1. Then, Vo2 is determined by the Zener diode , reference pin of KA431. Then, VO2 is determined by the Zener diode breakdown voltage. Assuming that the , transformer saturation and reduces the stress on the secondary diode during startup. For a fast build up of |
Fairchild Semiconductor Original |
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CQ1565 DIODE zd101 CQ0765R Transistor CQ0765RT REGULATOR CQ1265RT cq07 |
2FI300A-060Abstract: 6RI100G-120 / Power Modules (Diodes) Diode Modules 600V E 600 volts class general use diode modules , 450 800V E 800 volts class general use diode modules E series Device type 6RI30E-080 , R204 180 R206 450 R206 450 1200V G 1200 volts class general use diode modules G series , resistance (Junction to case) / Power Modules (Diodes) Diode Modules 1600V G 1600 volts class general use diode modules G series Device type 6RI30G-160 6RI75G-160 6RI75G-160B 6RI100G-160 |
Fuji Electric Original |
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6RI30E-060 6RI50E-060 6RI75E-060 6RI100E-060 6RI150E-060 2RI60E-060 6RI100G-120 R604A 6r1MBI D 880 6RI75P-080 6RI50E-080 |
CQ0765RTAbstract: CQ0765RT circuit diagram of turns for the output winding and VCC winding, respectively, VFo and VFa are the diode forward , resistors are designed so that the maximum cathode voltage of diode D2 is about 2.8V, which occurs when all , prevent transformer saturation and reduces the stress on the secondary diode during startup. For a fast , R3, Dz, and D1 to the reference pin of KA431. Then, Vo2 is determined by the zener diode breakdown , picture off signal is applied to Q1. Then, Vo2 is determined by the zener diode breakdown voltage |
Fairchild Semiconductor Original |
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cq1265 cq0965rt ntc 5D-9 REGULATOR CQ0765RT NTC 5D-11 BEAD101 FSCQ1465RT/FSCQ1565RT/FSCQ1565RP |
CQ1265RTAbstract: CQ0765RT circuit diagram of turns for the output winding and VCC winding, respectively, VFo and VFa are the diode forward , resistors are designed so that the maximum cathode voltage of diode D2 is about 2.8V, which occurs when all , prevent transformer saturation and reduces the stress on the secondary diode during startup. For a fast , R3, Dz, and D1 to the reference pin of KA431. Then, Vo2 is determined by the zener diode breakdown , picture off signal is applied to Q1. Then, Vo2 is determined by the zener diode breakdown voltage |
Fairchild Semiconductor Original |
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NTC 6D-22 cq1565rp cq0565rt ZD201 EER-4042 transistor D205 |
2FI300A-060Abstract: 6RI50E-080M5 / Power Modules (Diodes) Diode Modules 600V E 600 volts class general use diode modules , 450 800V E 800 volts class general use diode modules E series Device type 6RI30E-080 , R204 180 R206 450 R206 450 1200V G 1200 volts class general use diode modules G series , resistance (Junction to case) / Power Modules (Diodes) Diode Modules 1600V G 1600 volts class general use diode modules G series Device type 6RI30G-160 6RI75G-160 6RI75G-160B 6RI100G-160 |
- Original |
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2RI100E-060 2RI150E-060 2RI250E-060 6RI50E-080M5 6RI30E 2FI100A-060C 6ri100g-160b 6RI50P-160 6RI100G-120B R605A R606A R607A |
CQ0765RT circuit diagramAbstract: cq1265rt schematic diagram output winding and VCC winding, respectively, VFo and VFa are the diode forward voltage drops of the , internal resistors are designed so that the maximum cathode voltage of diode D2 is about 2.8V, which , transformer saturation and reduces the stress on the secondary diode during startup. For a fast build up of , mode, when picture off signal is applied to Q1. Then, Vo2 is determined by the zener diode breakdown , , and D1 to the reference pin of KA431. Then, Vo2 is determined by the zener diode breakdown voltage |
Fairchild Semiconductor Original |
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10uf, 35v electrolytic capacitor |
HC49 MEGATECAbstract: c103 TRANSISTOR J202 DEMO9RS08KA2 (Power) GND 2 GND R207 1K VDD POWER LD201 GREEN R201 470R , D201 1 Rectifier Diode GF1M SMA Zener Diode BZX84 6.8V 1/4W SOT23 1 Autorestore Fuse 0,2A , , R103, R206, R303, R310, R314 R306 5 SMD Resistor 1K 1% 1/8W 0805 R207, R305, R307, R308 |
Softec Microsystems Original |
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HC49 MEGATEC c103 TRANSISTOR transistor c317 c102 TRANSISTOR TRANSISTOR C307 C312 diode DC01098 SW102 SW101 BSS138 LD103 LD102 |
CQ0765RTAbstract: CQ1265RT of turns for the output winding and VCC winding, respectively, VFo and VFa are the diode forward , internal resistors are designed so that the maximum cathode voltage of diode D2 is about 2.8V, which , transformer saturation and reduces the stress on the secondary diode during startup. For a fast build up of , mode, when picture off signal is applied to Q1. Then, Vo2 is determined by the zener diode breakdown , to the reference pin of KA431. Then, Vo2 is determined by the zener diode breakdown voltage. Assuming |
Fairchild Semiconductor Original |
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cq0765rt TRANSISTOR FSCQ0565RTYDTU eer3540 thermal fuse 115 250V 2A cq0565R 1N4937 diode |
R604AAbstract: diode r207 DIODE MODULES Dimensions mm ERG28-12 ERG78-12 > ·> 017" (AF89-692) (AF88-456) 19.6m 2 in one-package R201 + ERG28 4-ERG78 1 1n one-package R101 (AF91-473) 2 in one-package R204 1 in one-package R102 (AF91-471) 3M 5 |
- OCR Scan |
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60 diode R702 AF89-746 AF90-611 AF89-503 AF89-150 AF89-160 AF91-470 |
6R150EAbstract: r701a â 2230712 D004004 351 â DIODE BRIDGE MODULES S Type Connection Part Number Ratings , Current Max. (A) Junction Temp Max. (°C) l2t A2S Forward Voltage Max. Diode Thyristor Thermal Resistance Max. (°C/W) tâ' Max. DIODE MODULES ¿Phase Diode Bridge 6 Chips In Bridge Insulates -Tâ'"0 , 250x2 5000 10000 1.30 0.10 R206 DIODE & THYRISTOR MODULES 7 Chips Insulated O 4R3TI20Y 800 20 , 2FI200A 600 200x2 3200 4000 1.25 0.12 R207 ToTof. 2FI50F 300 600 50*2 800 150 2560 1.75 0.40 |
- OCR Scan |
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6R150E 6RI75F 6RI100E 6RI150E 6RI30G r701a Thyristor Modules 6RI75G |
r-102Abstract: R102 DIODE BRIDGE MODULES R atin g s and C h arac teristics Rated Rated Current Max. (A) 30 Surge C urrent Max. (A) 360 Junction Temp Max. Forward Voltage Max. AS Diode 1.10 Thermal Resistance Max. Max. tisec Pkg. No. Type Connection Part Number Voltage Max. (V) 3-Phase Diode Bridge 6RI30E 6RI50E 6RI75E 6RI100E 0) 800 (°C) Thyristor (°C/W) 0.08 0.42 R604A , 1.25 R201 0.20 R201 R207 R2Û5A D C LU 2FI200A (/) _ l 3 o 0 01 > LU |
- OCR Scan |
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r-102 R102 r204 4r3ti 6RI100G 2RI60E 2RI100E 2RI60G 2RI100G 2RI150E |
6r150eAbstract: 6RI75E â 22307^2 000M0G4 351 â DIODE BRIDGE MODULES , Current Max. (A) Junction Temp Max. PC) l2t A2S Forward Voltage Max. : Diode Thyristor Thermal Resistance Max. (°C/W) t. Max. ; usee DIODE MODULES 3 Phase Diode Bridge e Chips. In Bndge insulated -i" , R206 2RI250E 250x2 5000 10000 1.30 0.10 R206 DIODE & THYRISTOR MODULES 7 Chips Insulated , 1600 10240 1.25 0.20 R201 2FI200A 600 200x2 3200 4000 1.25 0.12 R207 ÃTT |
- OCR Scan |
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6RI100S 6R150 R601 modules diode/thyristor R604 diode 351 ITT DIODE 125 6RN00E 6RI160E 2RI15GE 4R3TI30Y 4R3TI60Y |
TRANSISTOR D206Abstract: IC301 (OCL) · Minimization of production defects through the VCC surge and internal diode reinforcement. · Reduction of secondary side diode voltage stress at start and other transient condition by employing slope , flowing to the 4.7M resistor is approximately 1.6uA. To obtain the same results, a zener diode (approx , damage to Fairchild Power Switch from abnormal states, such as a diode or a load short. A diode or a , first sync signal. In this case the secondary rectifying diode is turned off while it is still |
Fairchild Semiconductor Original |
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FS6S0965R TRANSISTOR D206 IC301 EER-4445 Zener C212 IC-101 IC101 AN4108 |
TRANSISTOR D206Abstract: IC301 Minimization of production defects through the VCC surge and internal diode reinforcement. · Reduction of secondary side diode voltage stress at start and other transient condition by employing slope at sync , approximately 1.6uA. To obtain the same results, a zener diode (approx. 3.9V) can be series-connected to a , abnormal states, such as a diode or a load short. A diode or a load short causes a large current to flow , diode is turned off while it is still conducting. This causes a high reverse voltage spike between the |
Fairchild Semiconductor Original |
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EER4445 D2046 c203 opto coupler 4 pin opto d206 diode rg4c FS6S1265RE |
TRANSISTOR D206Abstract: IC301 (OCL) · Minimization of production defects by reinforcing VCC surge immunity and internal diode. · Reduction of secondary side diode voltage stress during startup and transient by introducing slope to the , required to increase the Cfb 3 AN4108 APPLICATION NOTE To obtain the same results, a zener diode , operation. The OCP block prevents damage to Fairchild Power Switch from abnormal states, such as a diode or a load short. A diode or a load short causes a large current to flow through the SenseFET for a |
Fairchild Semiconductor Original |
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KA5S-SERIES D203 IC LM7805 OF BLOCK diagram FS6S1565RB mosfet 4108 LM7805 5V REGULATOR IC |
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