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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

diode zener ZL 7

Catalog Datasheet MFG & Type PDF Document Tags

diode zener ZL 7

Abstract: BTS432F PROFETs (see table page 7 - 6) require an external zener diode with low forward voltage drop to be , external diode between Vbb and GND Semiconductor Group ZL V bb0 Vbb Fig. 7.3: PROFET with , ), the current flowing through the internal zener diode of the PROFET must be limited by an external , clamped by ZD1 to, say, -40V. A lamp or other types of load in place of zener diode ZD1 can be used to , internal (zener) diode in the PROFET is limited by the internal resistance Rbb, the freewheeling current
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diode zener ZL 15

Abstract: gemov transient suppressor. Zener diode type devices have lower clamping voltage than varistors (Figure 15). , the varistor and zener diode devices. Figure 16 shows a zener diode and a varistor, both recommended , Application Note 9307 The zener diode leakage is about 100 times higher at 5V than the varistor, 200µA versus less than 2µA. For a leakage current comparison, 25 zener diode devices were measured at 25oC. Only 1 , favorable to the varistor. The zener diode is specified at 1000mA at 5.5V. The leakage current of a zener
Harris Semiconductor
Original

Zener Diodes 300v

Abstract: ge VARISTOR DATA SHEET . Zener diode type devices have lower clamping voltage than varistors (Figure 15). Because all protective , varistor and zener diode devices. Figure 16 shows a zener diode and a varistor, both recommended by their , 9307 The zener diode leakage is about 100 times higher at 5V than the varistor, 200µA versus less than 2µA. 200 60kW 100 For a leakage current comparison, 25 zener diode devices were , , the comparison is even more favorable to the varistor. The zener diode is specified at 1000mA at 5.5V
Harris Semiconductor
Original

diode zener ZL 1

Abstract: N-5M (VOLTS) REVERSE CHARACTERISTIC (See table for specific values) FIGURE 5 ZENER DIODE CHARACTERISTICS AND , ) 941-6300 1N5518 thru 1N5546 FEATURES â'¢ LOW ZENER NOISE SPECIFIED â'¢ LOW ZENER IMPEDANCE â'¢ LOW , B C-D SUFFIX REGULATION LOW ZENER CURRENT IMPEDANCE CURRENT SUFFIX MAX. NOISE FACTOR vz JEDEC VOLTAGE 'ZT B C D SUFFIX MAXIMUM DENSITY AVz CURRENT TYPE NO. VZIZT mAdc ZZT^IZT DC ZENER AT lz = 250 \xk VOLTS "ZL (Note 1} VOLTS OHMS CURRENT Np (Note 6) mAdc (Note 2) (Note 3} VR
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1N5546B 1N5618 1N5519 1N5520 1N5521 1N5622 diode zener ZL 1 N-5M zener diode, zl 33 MIL-S-19500/437

FR0062

Abstract: Pi filter array design capacitance of a zener diode to form a resistor/capacitor (RC) low pass Pi filter. An IPD IC will reduce the , zener voltage of the diode. In contrast, a RC filter will limit the slew rate of the transient voltage , diodes have a capacitance of 8 pF and a zener breakdown voltage of 7 V. These diodes can be used for a , . Furthermore, the capacitance of a PN junction is proportional to the size of the diode; thus the zener , *ZS = 0 & ZL http://onsemi.com 7 AND8026/D IIN ZS + Pi Filter Circuit IOUT R1
ON Semiconductor
Original
FR0062 Pi filter array design RS-330 AND8027 NZF220DFT1 NZF220TT1

ISO7637-1

Abstract: ISO-7637-1 , overvoltage immunity is achieved by using an active zener protection circuit. If a voltage appears at the drain which exceeds the breakdown voltage of the zener diode Vz1, the MOSFET is turned on and absorbs , energy than would be possible in direct avalanche mode. A diode D1 connected in series with the zener diode prevents gate current flowing from the drive circuit in the on state of the transistor (VGS>VDS). , diode (Fig. 8.1). Vbb ST VZ1 PROFET VON VD1 Vbb IN OUT VGS GND ZL Fig. 8.1
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ISO7637-1 BTS442E2 BTS410E2 ISO-7637-1 diode zener ZL 7 diode zener ZL 8 diode zener st

diode zener ZL 27

Abstract: diode zener ZD 260 BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode SOD-323F B Features C A Wide zener voltage range selection : 2.4V to 75V VZ Tolerance Selection of ±5% D , BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode Electrical Characteristics Ta = 25 , Diode Small Signal Diode Rating and Sharacteristic Curves FIG 2 Zener Breakdown Characteristics , . Package Packing BZT52CxxS RR SOD-323F 3Kpcs/7" Reel Maximum Ratings and Electrical
Taiwan Semiconductor
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diode zener ZL 27 diode zener ZD 260 diode zener smd zk Zener diode zf 2.7 smd diode MARKING ZK diode zener ZD 15 MIL-STD-202 BZT52C

T-LVA62A

Abstract: diode zl 8.2 SGS-THOMSON IlOlg^iLlÃTOliiilllgi GENERAL PURPOSE & INDUSTRIAL ZENER DIODES LOW VOLTAGE AVALANCHE ZENER DIODES 400 mW / Tamb = 25°C Tj max = 175°C general purpose series Type VZT'IZT nom 'ZT , ) (5) (7) T-LVA 47A 4.7 10 15 4.0 2.0 4 T-LVA 51A 5.1 5 15 0.1 2.0 4 P T-LVA 56A 5.6 1 40 , 250 pA Maximum Regulation "ZT - 'ZL Package nom max AVZ 'ZL (V) (mA) (O) (PA) (V) (nV/VHz) (V) (mA) (1)(2)(4) (5) (7) T-LVA 347A 4.7 10 10 2.0 2.0 1 0.50 1.0 T-LVA 351A 5.1 5 10
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T-LVA62A diode zl 8.2 diode zl 82

smd zm diode

Abstract: BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode SOD-323F B C Features A ­Wide zener voltage range selection : 2.4V to 75V ­VZ Tolerance Selection of ±5% D , : D10 BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode Electrical , 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode Rating and Sharacteristic Curves FIG 2 Zener , Information Part No. Package Packing BZT52CxxS RR SOD-323F 3Kpcs/7" Reel Maximum Ratings
Taiwan Semiconductor
Original
smd zm diode

ZENER DIODE 437

Abstract: diode zener ZL 7 . V z C U RV E FIG U R E 3 ZENER DIODE CHARACTERISTICS AND SYMBOL IDENTIFICATION ZENER , information call: (6(0)941-6300 ; FEATURES · LOW ZENER NOISE SPECIFIED · LOW ZENER IM PEDANCE · LOW , : -65°C to +200°C Storage Temperature: - 65°C to + 200°C ELECTRICAL CHARACTERISTICS 200 m NOMINAL ZENER VOLTAGE Vz@ IZT VOLTS (Noie 2) MAX ZENER IMPEDANCE B-CD SUFFIX Z zi® IZT OHMS «M ot« 3) 8C D B-C O SUFFIX REGULATION SUFFIX MAX. NOISE FACTOR MAXIMUM DENSITY CURRENT DCZENER AT Iz = 2S0 î -A VOLTS ZL CURREMT (Note
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ZENER DIODE 437 1N551B-1 1N5546B-1 DO-35 1N5S23 1M5524 N5525

1N5523 DO7

Abstract: 1n5525 CURRENT B-C-D SUFFIX M AXIMUM DC ZENER CURRENT iz m © -s&r LOW vz CURRENT »ZL mAdc 0.10? MAX. 2.71 8 , ) 1000 500 J 200 z oe 100 50 oc u " oe o » 5.0 2.0 1.0 FIGU RE 5 ZENER DIODE , 1N5518 Mierosemi Corp. $ The diode experts thru 1N5546 SCOTTSDALE, AZ For m ore in fo rm a tio n call: ( 6 02 ) 941-6300 SANTA ANA, CA FEATURES · LOW ZENER NOISE SPECIFIED · LOW ZEN , AVAILABLE ON 1N5518 THROUGH N5546B PER MIL-S-19500/437 LOW VOLTAGE AVALANCHE D IO D E S DO-7 M A X IM
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1N5523 DO7 1n5525

944B

Abstract: 1n9418 information calk , S EQ U IV A LEN T AV AILABLE VIA SCD 11.7 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES , Tem perature: -65°C to +175°C . Storage Tem perature: -65°C to + 1 7 5 °C. DC Power Dissipation: 500 , otherwise specified JEOIC TYPE NUMBERS ZENER VOLTASE V, @ hr + (NOTE 3) VOLTS 1N 941 1N 941A 1N 9418 1N 942 , 11.12-12.28 11.12 12.28 ZENER TEST CURRENT In A 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5
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944B 1n9418 ca 944B 945b 9431N 1N SERIES DIODE 1N941 IL-S-19500/157 S1N944B

BTS712N1

Abstract: P-DSO-20 , 11,12, 15,16, 19,20 3 5 7 9 18 17 14 13 4 8 2 6 1) Pin configuration (top view , IN2 GND3/4 IN3 ST3/4 IN4 Vbb 1 2 3 4 5 6 7 8 9 10 · 20 19 18 17 16 15 14 , (equivalent to chip 1) 7 IN3 9 IN4 8 ST3/4 6 Load GND3/4 PROFET Signal GND Chip , Vbb = 12V, Tj,start = 150°C5), IL = 1.9 A, ZL = 66 mH, 0 one channel: IL = 2.8 A, ZL = 66 mH, 0 two parallel channels: IL = 4.4 A, ZL = 66 mH, 0 four parallel channels: Vbb Vbb Values
Infineon Technologies
Original
BTS712N1 P-DSO-20 Q67060-S7001-A2 2003-O

BTS 711-L1

Abstract: Q67060-S7000-A2 Pin 1,10, 11,12, 15,16, 19,20 3 5 7 9 18 17 14 13 4 8 2 6 1) Symbol Function , ) Vbb GND1/2 IN1 ST1/2 IN2 GND3/4 IN3 ST3/4 IN4 Vbb 1 2 3 4 5 6 7 8 9 10 · 20 , (equivalent to chip 1) 7 IN3 9 IN4 8 ST3/4 Channel 4 OUT4 6 13 Load GND3/4 , 12V, Tj,start = 150°C5), IL = 1.9 A, ZL = 66 mH, 0 one channel: IL = 2.8 A, ZL = 66 mH, 0 two parallel channels: IL = 4.4 A, ZL = 66 mH, 0 four parallel channels: IL VLoad dump4) self-limited
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BTS711L1 Q67060-S7000-A2 BTS 711-L1 diode zener ZL 44 711-L1 P-DSO-20-9

BTS712N1

Abstract: P-DSO-20 Logic ST ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 380 at 1.6 mA, ESD zener diodes are , the zener voltage (increase of up to 1 V). OUT Power Inverse Diode GND R GND Inductive , Functions Pin 1,10, 11,12, 15,16, 19,20 3 5 7 9 18 17 14 13 4 8 2 6 1) Symbol , ) Vbb GND1/2 IN1 ST1/2 IN2 GND3/4 IN3 ST3/4 IN4 Vbb 1 2 3 4 5 6 7 8 9 10 · 20 , (equivalent to chip 1) 7 IN3 9 IN4 8 ST3/4 6 Load GND3/4 PROFET Signal GND Chip
Infineon Technologies
Original
2004-M

BTS712N1

Abstract: BTS712 ST IN ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 380 at 1.6 mA, ESD zener diodes are , the zener voltage (increase of up to 1 V). RI OUT ST Power Inverse Diode Logic GND , Pin 1,10, 11,12, 15,16, 19,20 3 5 7 9 18 17 14 13 4 8 2 6 1) Symbol Function , ) Vbb GND1/2 IN1 ST1/2 IN2 GND3/4 IN3 ST3/4 IN4 Vbb 1 2 3 4 5 6 7 8 9 10 · 20 , (equivalent to chip 1) 7 IN3 9 IN4 8 ST3/4 6 Load GND3/4 PROFET Signal GND Chip
Siemens
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BTS712 diode zener ZL 15 712-N1

BTS712

Abstract: Q67060-S7001-A2 Diode ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 380 at 1.6 mA, ESD zener diodes are not to , functions. Pin Definitions and Functions Pin 1,10, 11,12, 15,16, 19,20 3 5 7 9 18 17 14 13 4 8 2 6 Symbol , /4 IN3 ST3/4 IN4 Vbb 1 2 3 4 5 6 7 8 9 10 · 20 19 18 17 16 15 14 13 12 11 Vbb Vbb OUT1 OUT2 , Leadframe Logic and protection circuit of chip 2 (equivalent to chip 1) 7 9 8 IN3 IN4 ST3/4 Channel 3 , switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C5), IL = 1.9 A, ZL = 66 mH, 0 one
Infineon Technologies
Original
2003-N

ns537

Abstract: NS546 ) FIGURE 3 ZENER DIODE CHARACTERISTICS AND SYMBOL IDENTIFICATION CAPACITANCE vs. Vz CURVE 100 90 80 70 , FEATURES â'¢ LOWZENER NOISE SPECIFIED â'¢ LOW ZENER IMPEDANCE â'¢ LOW LEAKAGE CURRENT â'¢ HERMETICALLY , ELECTRICAL CHARACTERISTICS LOW VOLTAGE AVALANCHE DIODES DO-35 JEDEC TYPE NO. (Note 1) NOMINAL ZENER , 0 05 0 05 6.5 ' 0 8.0 9.0 9.5 7 5 3 2 9 1 99 10.8 46 38 30 32 40 40 0.05 0 05 0.10 0.20 0.20 0.0 00 , % and D suffix for + 1.0%. NOTE 2 â'" ZENER (Vz) VOLTAGE MEASUREMENT Nominal zener voltage is measured
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OCR Scan
N5519 N5522 N5531 ns537 NS546 n5s4 N5533 1N5518-I N5S20 N5521 N5523

MARKING SMD x9

Abstract: Formosa MS SMD Zener Diode ZGFM103V3B-M THRU ZGFM10330B-M List List , -121708 2008/02/10 2012/10/12 G Page. 8 Formosa MS SMD Zener Diode ZGFM103V3B-M THRU , G Page. 8 Formosa MS SMD Zener Diode Electrical characteristics (at T =25 C unless , Revision DS-121708 2008/02/10 2012/10/12 G Page. 8 Formosa MS SMD Zener Diode , Zener Diode ZGFM103V3B-M THRU ZGFM10330B-M Packing information P0 P1 d E F B A W P
Formosa MS
Original
MARKING SMD x9 MIL-STD-750D METHOD-2031 MIL-STD-202F METHOD-208 METHOD-1038 JESD22-A102

BTS721L1

Abstract: Q67060-S7002-A2 Pin 1,10, 11,12, 15,16, 19,20 3 5 7 9 18 17 14 13 4 8 2 6 1) Symbol Function , ) Vbb GND1/2 IN1 ST1/2 IN2 GND3/4 IN3 ST3/4 IN4 Vbb 1 2 3 4 5 6 7 8 9 10 · 20 , (equivalent to chip 1) 7 IN3 9 IN4 8 ST3/4 Channel 4 OUT4 6 13 Load GND3/4 , 150°C5), IL = 2.9 A, ZL = 58 mH, 0 one channel: IL = 4.3 A, ZL = 58 mH, 0 two parallel channels: IL = 6.3 A, ZL = 58 mH, 0 four parallel channels: IL VLoad dump4) self-limited 60 A V
Siemens
Original
BTS721L1 Q67060-S7002-A2 721L1
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