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diode zener ZL 15

Catalog Datasheet MFG & Type PDF Document Tags

diode zener ZL 15

Abstract: gemov transient suppressor. Zener diode type devices have lower clamping voltage than varistors (Figure 15). , VOLTAGE POWER ZENER COMMON CURRENT FIGURE 15. CHARACTERISTICS OF ZENER AND VARISTOR FIGURE , the varistor and zener diode devices. Figure 16 shows a zener diode and a varistor, both recommended , Application Note 9307 The zener diode leakage is about 100 times higher at 5V than the varistor, 200µA versus less than 2µA. For a leakage current comparison, 25 zener diode devices were measured at 25oC. Only 1
Harris Semiconductor
Original

diode zener ZL 27

Abstract: diode zener ZL 15 FIGURE 3 Capacitance vs. Zener Voltage (typical) FIGURE 4 Zener Diode Characteristics and Symbol , 1N5518B-1 thru 1N5546B-1 Low Voltage Avalanche 500 mW Zener Diodes DO-35 Qualified per MIL-PRF-19500/437 DESCRIPTION The 1N5518-1 thru 1N5546-1 series of 0.5 watt axial-leaded glass Zener Voltage , -35 Zeners also feature an internal metallurgical bond. This type of bonded Zener package construction is , Zener products to meet higher and lower power applications. Important: For the latest information
Microsemi
Original
diode zener ZL 27 diode zener ZL 15 1N5522B1 JANTXV diode zener ZL 10 zener diode, zl 33 diode zener ZL 8 1N5518 1N5546 DO-204AH DO-213AA 1N5518BUR-1 1N5546BUR-1

zener diode, zl 33

Abstract: diode zener ZL 20 Capacitance vs. Zener Voltage (TYPICAL) FIGURE 4 Zener Diode Characteristics and Symbol Identification , 1N5518B thru 1N5546B-1 Low Voltage Avalanche 500 mW Zener Diodes DO-35 Qualified per MIL-PRF-19500/437 DESCRIPTION The 1N5518 thru 1N5546 series of 0.5 watt axial-leaded glass Zener Voltage Regulators , are also available with an internal metallurgical bond option. This type of bonded Zener package , numerous other Zener products to meet higher and lower power applications. Important: For the latest
Microsemi
Original
diode zener ZL 20 diode zener ZL 12 1n5524 T4-LDS-0037-1

Zener Diodes 300v

Abstract: ge VARISTOR DATA SHEET . Zener diode type devices have lower clamping voltage than varistors (Figure 15). Because all protective , varistor and zener diode devices. Figure 16 shows a zener diode and a varistor, both recommended by their , 9307 The zener diode leakage is about 100 times higher at 5V than the varistor, 200µA versus less than 2µA. 200 60kW 100 For a leakage current comparison, 25 zener diode devices were , , the comparison is even more favorable to the varistor. The zener diode is specified at 1000mA at 5.5V
Harris Semiconductor
Original
AN9307 Zener Diodes 300v ge VARISTOR DATA SHEET GE-MOV zener diode 20a ge varistor 250a 73SD252 73SD23G

1N5518BUR1 JANTX

Abstract: 1n5518bur-1 FIGURE 3 ­ Capacitance vs. Zener Voltage (typical) FIGURE 4 Zener Diode Characteristics and Symbol , 1N5518BUR-1 thru 1N5546BUR-1 Low Voltage Avalanche 500 mW Zener Diodes Qualified per MIL-PRF-19500/437 DESCRIPTION The 1N5518BUR-1 thru 1N5546BUR-1 series of 0.5 watt glass surface mount Zener voltage , devices feature an internal metallurgical bond. This type of bonded Zener package construction is also available in JAN, JANTX, and JANTXV military qualifications. Microsemi also offers numerous other Zener
Microsemi
Original
T4-LDS-0037 1N5518BUR1 JANTX zener diode, zl 22 ZENER DIODE 437 MIL-STD-750
Abstract: where diode is to be operated with the banded end positive with respect to the opposite end for Zener , Voltage (Typical) T4-LDS-0037, Rev 2 (111456) FIGURE 4 Zener Diode Characteristics and Symbol , and JANTXV Low Voltage Avalanche 500 mW Zener Diodes Qualified per MIL-PRF-19500/437 DESCRIPTION The 1N5518BUR-1 thru 1N5546BUR-1 series of 0.5 watt glass surface mount Zener voltage , devices are available with an internal metallurgical bond option. This type of bonded Zener package Microsemi
Original

zener diode, zl 33

Abstract: Z FIGURE 3 ­ Capacitance vs. Zener Voltage (Typical) FIGURE 4 Zener Diode Characteristics and , 1N5518BUR-1 thru 1N5546BUR-1 Low Voltage Avalanche 500 mW Zener Diodes Qualified per MIL-PRF-19500/437 DESCRIPTION The 1N5518BUR-1 thru 1N5546BUR-1 series of 0.5 watt glass surface mount Zener voltage , devices are available with an internal metallurgical bond option. This type of bonded Zener package , Zener products to meet higher and lower power applications. Available on commercial versions
Microsemi
Original
46BUR-1

zener diode, zl 33

Abstract: diode zener ZL 15 FIGURE 3 ­ Capacitance vs. Zener Voltage (typical) FIGURE 4 Zener Diode Characteristics and Symbol , 1N5518BUR-1 thru 1N5546BUR-1 Low Voltage Avalanche 500 mW Zener Diodes Qualified per MIL-PRF-19500/437 DESCRIPTION The 1N5518BUR-1 thru 1N5546BUR-1 series of 0.5 watt glass surface mount Zener voltage , devices feature an internal metallurgical bond. This type of bonded Zener package construction is also available in JAN, JANTX, and JANTXV military qualifications. Microsemi also offers numerous other Zener
Microsemi
Original
marking sod80 zener diode, zl 15

diode zener ZL 1

Abstract: N-5M (VOLTS) REVERSE CHARACTERISTIC (See table for specific values) FIGURE 5 ZENER DIODE CHARACTERISTICS AND , ) 941-6300 1N5518 thru 1N5546 FEATURES â'¢ LOW ZENER NOISE SPECIFIED â'¢ LOW ZENER IMPEDANCE â'¢ LOW , B C-D SUFFIX REGULATION LOW ZENER CURRENT IMPEDANCE CURRENT SUFFIX MAX. NOISE FACTOR vz JEDEC VOLTAGE 'ZT B C D SUFFIX MAXIMUM DENSITY AVz CURRENT TYPE NO. VZIZT mAdc ZZT^IZT DC ZENER AT lz = 250 \xk VOLTS "ZL (Note 1} VOLTS OHMS CURRENT Np (Note 6) mAdc (Note 2) (Note 3} VR
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OCR Scan
1N5546B 1N5618 1N5519 1N5520 1N5521 1N5622 diode zener ZL 1 N-5M 1N5523 MIL-S-19500/437

CDLL5528B

Abstract: : (978) 689-0803 Website: http: //www.microsemi.com ZENER DIODE, 500mW â'" LEADLESS PACKAGE FOR , specified) TYPE NUMBER (NOTE 1) NOMINAL ZENER VOLTAGE V Z @ I ZT (NOTE 2) ZENER TEST CURRENT MAX. ZENER IMPEDANCE B-C-D SUFFIX I ZT Z ZT @ I ZT (NOTE 3) MAXIMUM REVERSE LEAKAGE CURRENT IR (NOTE 4) B-C-D SUFFIX MAIMUM DC ZENER REGULATION FACTOR CURRENT LOW VZ CURRENT I ZL I ZM âV Z (NOTE 5) B-C-DSUFFIX mA VOLTS mA 1.0 1.0 1.0
Microsemi
Original
CDLL5528B CDLL5518 CDLL5546D CDLL5518B CDLL5519B CDLL5520B CDLL5521B

FR0062

Abstract: Pi filter array design discrete resistors, capacitors, and zener diodes. The filters, as shown in Figures 1, 2 and 3, use the capacitance of a zener diode to form a resistor/capacitor (RC) low pass Pi filter. An IPD IC will reduce the , zener voltage of the diode. In contrast, a RC filter will limit the slew rate of the transient voltage , . Furthermore, the capacitance of a PN junction is proportional to the size of the diode; thus the zener , . Lepkowski, Jim, Application Note: "AND8027: Zener Diode Based Integrated Passive Device Filters, An
ON Semiconductor
Original
FR0062 Pi filter array design RS-330 NZF220DFT1 NZF220TT1 PIN23 AND8026/D

zener diode - C 10 ST

Abstract: diode zener ZL 15 diode voltage arising from the effect of impedance. It is in effect an exploded view of the zener , ~ SCOTTSPM.E. '17 For more inforn (602) 941-6300 1N3154&A thru 1N3157 & A FEATURES â'¢ ZENER VOLTAGE 8.4V  , JEDEC TYPE NUMBERS ZENER VOLTAGE Vj @ In (Note 1 & 4) ZENER TEST CURRENT In MAXIMUM ZENER IMPEDANCE (NOTE 21 Zl VOLTAGE TEMPERATURE STABILITY (Note 3 & 4) -iVz, MAXIMUM TEMPERATURE RANGE EFFECTIVE TEMPERATURE COEFFICIENT a« VOLTS mA OHMS mV â'¢c %/-c 1N3154 8.00-8.80 10 15 130 â'" 55 to +100 .01
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OCR Scan
1N3154A 1N3155 1N3155A 1N3156 1N3156A 1N3157A zener diode - C 10 ST MIL-S-19500/158

diode zener ZL 27

Abstract: diode zener ZD 260 BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode SOD-323F B Features C A Wide zener voltage range selection : 2.4V to 75V VZ Tolerance Selection of ±5% D , BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode Electrical Characteristics Ta = 25 , Diode Small Signal Diode Rating and Sharacteristic Curves FIG 2 Zener Breakdown Characteristics , are kept at ambient temperature Zener I vs. V Characteristics Current IF VZM VZ VBR VR IR
Taiwan Semiconductor
Original
diode zener ZD 260 diode zener smd zk Zener diode zf 2.7 smd diode MARKING ZK diode zener ZD 15 diode zd 329 MIL-STD-202 BZT52C

smd zm diode

Abstract: BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode SOD-323F B C Features A ­Wide zener voltage range selection : 2.4V to 75V ­VZ Tolerance Selection of ±5% D , : D10 BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode Electrical , 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode Rating and Sharacteristic Curves FIG 2 Zener , . Valid provided that electrodes are kept at ambient temperature Zener I vs. V Characteristics Current
Taiwan Semiconductor
Original
smd zm diode

T-LVA62A

Abstract: diode zl 8.2 SGS-THOMSON IlOlg^iLlÃTOliiilllgi GENERAL PURPOSE & INDUSTRIAL ZENER DIODES LOW VOLTAGE AVALANCHE ZENER DIODES 400 mW / Tamb = 25°C Tj max = 175°C general purpose series Type VZT'IZT nom 'ZT , ) (5) (7) T-LVA 47A 4.7 10 15 4.0 2.0 4 T-LVA 51A 5.1 5 15 0.1 2.0 4 P T-LVA 56A 5.6 1 40 , 250 pA Maximum Regulation "ZT - 'ZL Package nom max AVZ 'ZL (V) (mA) (O) (PA) (V) (nV/VHz , 96 1.0 0.10 50 1.0 1 5.45 15 3000 T-LVA 459A 5.9 100 2 30 0.5 0.10 10 1.0 1 5.85 2.5 1000 P T-LVA
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OCR Scan
T-LVA62A diode zl 8.2 diode zl 82

diode zener ZD 36

Abstract: zener diode, zl 33 about ±6% . ZENER DIODE SILICON EPITAXIAL PLANAR DIODE KDZ2.0W-36W MAXIMUM RATING (Ta , .3VV KDZ4. V V KDZ5.1VV KDZ5.6VV KDZ6.2VV KDZ6.8VV KDZ ,5V V KDZ8.2VV Marking Y ZJ JY ZK ZL ZM ZN ZP Z ZR , ^2^ © % V Marking J fi SY 1 0Y 1Y 11 12 13 15 16 18 2Y 3Y 5Y 6Y 8Y T pe No . KDZ20VV KDZ22VV , .0W-36W ELECTRICAL CHARACTERISTICS (Ta=25°C) Zener Voltage Vz (V) Dynamic Impedance Z z (Q ) KNEE Dynamic Impedance , .0W-36W ELECTRICAL CHARACTERISTICS (Ta=25`C) Zener Voltage Vz (V) Dynamic Impedance Z z(ffi) KNEE Dynamic Impedance
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OCR Scan
diode zener ZD 36 DIODE MARKING 9Y zener diode zg 36 diode marking 4Y diode zener ZL 30 zener diode BZ 22 KDZ10VV KDZ11VV KDZ12VV KDZ13VV KDZ15VV KDZ16VV

diode zl 8.2

Abstract: · 1N5518B THRU 1N5546B AVAILABLE IN JANHC AND JANKC · ZENER DIODE CHIPS · ALL JUNCTIONS COMPLETELY , mA: 1.5 Volts M aximum ELECTRICAL CHARA CTERISTICS @ 25°C, unless otherwise specified NOMINAL ZENER VOLTAGE Vz @ Iz t VOLTS (Note 1) CD5518B CD5519B CD5520B CD5521B CD5522B CD5523B CD5S24B CD5525B , 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 MAX. ZENER IMPEDANCE , 100 100 100 100 100 100 REGULATION FACTOR AVZ VOLTS LOW vz CURRENT 'ZL mAdc 2.0 2.0 2.0 2.0 1.0
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OCR Scan
CD5546B CD5526B CD5527B CD5528B CD5529B CD5530B

CD5530

Abstract: 1N5518B â'¢ 1N5518B THRU 1N5546B AVAILABLE IN JANC â'¢ ZENER DIODE CHIPS â'¢ ALL JUNCTIONS COMPLETELY , 200 mA: 1.5 Volts Maximum ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified NOMINAL MAX. REVERSE JEDEC ZENER MAX. ZENER LEAKAGE CURRENT REGULATION LOW TYPE VOLTAGE TEST IMPEDANCE FACTOR VZ NUMBER VZ®'ZT CURRENT zZT ® i2T IR xvz CURRENT VOLTS 'ZT OHMS ^ Ade Vr VOLTS 'ZL (Note , 0.90 2.0 CD5520B 3.9 20 22 1.0 1.0 0.90 2.0 CD5521B 4.3 20 18 3.0 1.5 0.75 2.0 CD5522B 4.7 10 22 2.0
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OCR Scan
CD5530 175DC CD5524B CD5531B CD5532B CD5533B CD5534B

diode zener ZD 260

Abstract: SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE , KDZ9.1VV ZS SY KY KDZ10VV 10 ZL LY KDZ11VV KDZ5.6VV ZM MY EY , KDZ15VV 15 5Y KDZ33VV 33 VY KDZ7.5VV ZQ QY KDZ16VV 16 6Y KDZ36VV 36 , Impedance Zz ( ) Zener Voltage Vz (V) TYPE No. Grade Reverse Current IR ( A) 3.89 4.00 4.17 , 70 5 1000 0.5 1 1.5 40 5 900 0.5 1 2.5 30 5 500 0.5 1
KEC
Original
KDZ24VV KDZ27VV KDZ30VV KDZ18VV

9vv marking

Abstract: DIODE MARKING 9Y ±6%. 2 KDZ2.0VV~36VV ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK 1 D C , .2VV Marking ZJ ZK ZL ZM ZN ZP ZQ ZR Y JY KY LY MY NY PY QY RY Type No. KDZ9.1VV KDZ10VV KDZ11VV KDZ12VV KDZ13VV KDZ15VV KDZ16VV KDZ18VV Marking ZS 10 11 12 13 15 16 18 Y SY 0Y 1Y 2Y 3Y 5Y 6Y 8Y Type No , CHARACTERISTICS (Ta=25) Zener Voltage Vz (V) TYPE No. Grade Min. KDZ2.0VV Y KDZ2.2VV Y KDZ2.4VV Y KDZ2.7VV Y KDZ3 , KDZ7.5VV Y KDZ8.2VV Y KDZ9.1VV Y KDZ10VV Y 9.77 10.21 8.85 9.40 9.23 10.60 5 15 5 120 0.5 0.5 8.0 8.02
KEC
Original
9vv marking marking zn KDZ12VVY
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