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Abstract: Output Modules Datasheet WG (M) ODC. Comus International BVBA Overhaamlaan 40 3700 Tongeren , , capacitive loads Technical data WG (M) ODC. 5 5A 15 15A 24 24A 5-18 Input circuit , WE RECOMMEND EXTERNAL CONTACT PROTECTION (diode, RC-link) with inductive loads. page 1 , Datasheet WG (M) ODC. Comus International NV Overhaamlaan 40 3700 Tongeren, Belgium Phone: +32 , 10, USA : + 1 973 777 6900 - Assemtech, UK : +44 (0) 1255 862 236 Output Modules Datasheet WG (M Comus Group of Companies
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WG-ODC5 4 WG 130 odc24 WGMODC24
Abstract: AN64 Improving the Accuracy of the TC1066/TCM1617/TC1068 Thermal Diode Temperature Sensor IC , temperature is significantly lower than that of the remote P-N junction diode. This would be true if the , condition can increase the error associated with the external diode. This error manifests itself as an , ; &DQDGD 7HO )D[ 0LFURFKLS 7HFKQRORJ\ $XVWUDOLD 3W\ /WG 6XLWH 5DZVRQ 6WUHHW (SSLQJ 16: $XVWUDOLD 7HO )D[ 0LFURFKLS 7HFKQRORJ\ &RQVXOWLQJ 6KDQJKDL &R /WG %HLMLQJ /LDLVRQ 2IILFH 8QLW %HL Microchip Technology
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AN64 TC1066 TCM1617 TC1066/ TCM1617/TC1068 DS00775A
Abstract: Solid State Relays Datasheet WG F8 Comus International NV Overhaamlaan 40 3700 Tongeren , loads Technical data WG F8. 50 D 08 60 D 10 100 D 05 200 D 03 400 D 01 1.200 , -20.+80 ° C We recommend external contact protection (diode, RC-snubber) for inductive loads 1 Elektronische Lastrelais Solid State Relays Datasheet WG F8 WG F8 Comus International NV Overhaamlaan , Lötseite 10,2 43,2 Solid State Relays Datasheet WG F8 WG F8 Comus International NV Comus Group of Companies
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Abstract: Solid State Relays Datasheet WG F8 Comus International Bvba Overhaamlaan 40 3700 Tongeren , loads Technical data WG F8. 50 D 08 60 D 10 100 D 05 200 D 03 400 D 01 Input , -20.+80 ° C We recommend external contact protection (diode, RC-snubber) for inductive loads , State Relays Datasheet WG F8 WG F8 Comus International Bvba Overhaamlaan 40 3700 Tongeren , Datasheet WG F8 WG F8 Comus International Bvba Overhaamlaan 40 3700 Tongeren, Belgium Phone: +32 Comus Group of Companies
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Abstract: Solid State Relays Datasheet WG F8 Features Switching Output Input Applications Direct MOS-FET DC , Email: info@comus.be www.comus.be Resistive, capacitive and inductive DC loads Technical data WG , D 10 100 D 05 200 D 03 400 D 01 We recommend external contact protection (diode , : +44 (0) 1255 862 236 Solid State Relays Datasheet WG WGF8 F8 Dimensions in mm & circuit diagram , Datasheet WG WGF8 F8 Derating-diagrams Comus International Bvba Overhaamlaan 40 3700 Tongeren, Belgium Comus Group of Companies
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Abstract: Solid State Relays Datasheet WG F Comus International NV Overhaamlaan 40 3700 Tongeren , data WG F. 50 D 30 100 D 15 200 D 10 400 D 05 Input circuit Control voltage range , temperature -20.+80 ° C We recommend external contact protection (diode, RC-snubber) for inductive loads 1 Solid State Relays Datasheet WG F Comus International NV Overhaamlaan 40 3700 , diagrams WG F 50 D 30 WG F 100 D 15 H ea t s ink K/ W H e at sink K/ W 12 25 Lload Comus Group of Companies
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Abstract: diode forward characteristics, chip level $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR , rated values indicate limits beyond which damage to the device may occur $%% 6ZLW]HUODQG /WG , emitter saturation voltage is given at chip level $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW , thermal resistance junction to case Rth(j-c)IGBT 0.009 K/W Diode thermal resistance junction to case Rth(j-c)DIODE 0.017 K/W Thermal resistance case to heatsink Rth(c-h) per module ABB Automation
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L3DN70 CH-5600
Abstract: ] )LJ Typical diode forward characteristics, chip level $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV , rated values indicate limits beyond which damage to the device may occur $%% 6ZLW]HUODQG /WG , saturation voltage is given at chip level $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH , junction to case Rth(j-c)IGBT 0.009 K/W Diode thermal resistance junction to case Rth(j-c)DIODE 0.017 K/W Thermal resistance case to heatsink Rth(c-h) per module, grease = 1W/m x K ABB Automation
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Abstract: indicate limits beyond which damage to the device may occur $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV , 2) Collector emitter saturation voltage is given at chip level $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV , to case Diode thermal resistance junction to case Thermal resistance case to heatsink 6\PERO &RQGLWLRQV Rth(j-c)IGBT Rth(j-c)DIODE Rth(c-h) per module, grease = 1W/m x K 0.006 PLQ W\S PD[ 8QLW 0.009 K , 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH Doc. No ABB Automation
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Abstract: indicate limits beyond which damage to the device may occur $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV , ) Collector emitter saturation voltage is given at chip level $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV , to case Diode thermal resistance junction to case Thermal resistance case to heatsink 6\PERO &RQGLWLRQV Rth(j-c)IGBT Rth(j-c)DIODE Rth(c-h) per module, grease = 1W/m x K 0.006 PLQ W\S PD[ 8QLW 0.009 K , 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH Doc. No ABB Automation
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Abstract: rated values indicate limits beyond which damage to the device may occur $%% 6ZLW]HUODQG /WG , saturation voltage is given at chip level $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH , to case Rth(j-c)IGBT 0.0085 K/W Diode thermal resistance junction to case Rth(j-c)DIODE , Weight PD[ x 8QLW mm mm 19 mm 32 1500 gr $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV , ]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH Doc. No. 5SYA ABB Automation
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Abstract: rated values indicate limits beyond which damage to the device may occur $%% 6ZLW]HUODQG /WG , emitter saturation voltage is given at chip level $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW , IGBT thermal resistance junction to case Rth(j-c)IGBT 0.007 K/W Diode thermal resistance junction to case Rth(j-c)DIODE 0.012 K/W Thermal resistance case to heatsink Rth(c-h) per , 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH Doc. No ABB Automation
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Abstract: ] 3 4 )LJ Typical diode forward characteristics, chip level $%% 6ZLW]HUODQG /WG , indicate limits beyond which damage to the device may occur $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV , saturation voltage is given at chip level $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH , level 7KHUPDO SURSHUWLHV 3DUDPHWHU IGBT thermal resistance junction to case Diode thermal resistance junction to case Thermal resistance case to heatsink 6\PERO &RQGLWLRQV Rth(j-c)IGBT Rth(j-c)DIODE Rth(c-h ABB Automation
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Abstract: °C )LJ Typical diode forward characteristics, chip level $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV , indicate limits beyond which damage to the device may occur $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV , 2) Collector emitter saturation voltage is given at chip level $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV , to case Diode thermal resistance junction to case Thermal resistance case to heatsink 6\PERO &RQGLWLRQV Rth(j-c)IGBT Rth(j-c)DIODE Rth(c-h) per module, grease = 1W/m x K 0.006 PLQ W\S PD[ 8QLW 0.007 K ABB Automation
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Abstract: oscillator Sweep oscillator YIG-tuned oscillator Diode modulator YIG-tuned oscillator YIG-tuned oscillator , ". 4 Alphabetical index a Adapters wg. to coax. 69 Adapters double ridge wg. to coax. 69 , 60-61 t Transitions wg. to coax. 69 Tuning heads 17 W Waveguide data 80-81 Waveguide rotary joints 44-53 , element, either transistor or diode, is carefully reduced in the oscillator design. Tuning current For -
OCR Scan
8-12 GHz Yig Tuned Oscillator PM7015X electromagnetic pulse generator jammer PM7892 yig oscillator hp PM7288X MIL-Q-9858 MIL-C-45662 S-126 17173-SILAB-S S-163
Abstract: 660 ns Tvj = 25 °C 32 mJ Tvj = 125 °C 53 mJ $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV , 1 1.5 2 0 2.5 50 100 )LJ Typical diode forward characteristics 200 , 2000 -1200 2400 0 0 Typical diode reverse recovery behaviour 400 600 800 1000 , $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH Doc. No , 1) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd ABB Automation
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5SYA1662-00 5SMX12K1701 5SYA2033-01
Abstract: Solid State Relays Datasheet WG F Comus International Bvba Overhaamlaan 40 3700 Tongeren , data WG F. 50 D 30 100 D 15 200 D 10 400 D 05 Input circuit Control voltage range , protection (diode, RC-snubber) for inductive loads page 1 www.comus.com Rev. 2 ECN 06030601 , 6900 - Assemtech, UK : +44 (0) 1255 862 236 Solid State Relays Datasheet WG F Comus , : info@comus.be www.comus.be Derating diagrams WG F 100 D 15 WG F 50 D 30 H ea t s ink K/ W H e a Comus Group of Companies
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f400d comus wg f 100 d 15 mosfet wit frequency range WG s 35 wg 8 s
Abstract: , 600 ns Switch : 5SMX12K1701 10 mJ $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW , -25 -800 -1000 IRM 0 VR -50 -75 400 800 1200 6 Typical diode reverse , 50 IR [A] )LJ Typical diode forward characteristics 75 125 IF [A] VF [V] )LJ , /dt [A/us] )LJ Typical reverse recovery vs. di/dt $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV , instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA2033-01 ABB Automation
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5SYA1660-01
Abstract: uC ns ns mJ mJ $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV , Typical diode forward characteristics )LJ Typical reverse recovery characteristics vs. forward , 0 0 400 800 1200 1600 di/dt [A/us] 0 2000 )LJ Typical diode reverse recovery behaviour )LJ Typical reverse recovery vs. di/dt $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR , ) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors ABB Automation
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5SYA1660-02
Abstract: 5SMX12M3300 $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH , 300 )LJ Typical diode forward characteristics )LJ Typical reverse recovery , 600 di/dt [A/us] 800 1000 )LJ Typical diode reverse recovery behaviour )LJ Typical reverse recovery vs. di/dt $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH , assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No ABB Switzerland
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5SYA1661-00
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