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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

diode wg

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WG-ODC5

Abstract: 4 WG 130 Output Modules Datasheet WG (M) ODC. Comus International BVBA Overhaamlaan 40 3700 Tongeren , , capacitive loads Technical data WG (M) ODC. 5 5A 15 15A 24 24A 5-18 Input circuit , WE RECOMMEND EXTERNAL CONTACT PROTECTION (diode, RC-link) with inductive loads. page 1 , Datasheet WG (M) ODC. Comus International NV Overhaamlaan 40 3700 Tongeren, Belgium Phone: +32 , 10, USA : + 1 973 777 6900 - Assemtech, UK : +44 (0) 1255 862 236 Output Modules Datasheet WG (M
Comus Group of Companies
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TCM1617

Abstract: AN64 AN64 Improving the Accuracy of the TC1066/TCM1617/TC1068 Thermal Diode Temperature Sensor IC , temperature is significantly lower than that of the remote P-N junction diode. This would be true if the , condition can increase the error associated with the external diode. This error manifests itself as an , ; &DQDGD 7HO )D[ 0LFURFKLS 7HFKQRORJ\ $XVWUDOLD 3W\ /WG 6XLWH 5DZVRQ 6WUHHW (SSLQJ 16: $XVWUDOLD 7HO )D[ 0LFURFKLS 7HFKQRORJ\ &RQVXOWLQJ 6KDQJKDL &R /WG %HLMLQJ /LDLVRQ 2IILFH 8QLW %HL
Microchip Technology
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TCM1617 AN64 TC1066 TC1066/ TCM1617/TC1068 DS00775A
Abstract: Solid State Relays Datasheet WG F8 Comus International NV Overhaamlaan 40 3700 Tongeren , loads Technical data WG F8. 50 D 08 60 D 10 100 D 05 200 D 03 400 D 01 1.200 , -20.+80 ° C We recommend external contact protection (diode, RC-snubber) for inductive loads 1 Elektronische Lastrelais Solid State Relays Datasheet WG F8 WG F8 Comus International NV Overhaamlaan , Lötseite 10,2 43,2 Solid State Relays Datasheet WG F8 WG F8 Comus International NV Comus Group of Companies
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Abstract: Solid State Relays Datasheet WG F8 Comus International Bvba Overhaamlaan 40 3700 Tongeren , loads Technical data WG F8. 50 D 08 60 D 10 100 D 05 200 D 03 400 D 01 Input , -20.+80 ° C We recommend external contact protection (diode, RC-snubber) for inductive loads , State Relays Datasheet WG F8 WG F8 Comus International Bvba Overhaamlaan 40 3700 Tongeren , Datasheet WG F8 WG F8 Comus International Bvba Overhaamlaan 40 3700 Tongeren, Belgium Phone: +32 Comus Group of Companies
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Abstract: Solid State Relays Datasheet WG F8 Features Switching Output Input Applications Direct MOS-FET DC , Email: info@comus.be www.comus.be Resistive, capacitive and inductive DC loads Technical data WG , D 10 100 D 05 200 D 03 400 D 01 We recommend external contact protection (diode , : +44 (0) 1255 862 236 Solid State Relays Datasheet WG WGF8 F8 Dimensions in mm & circuit diagram , Datasheet WG WGF8 F8 Derating-diagrams Comus International Bvba Overhaamlaan 40 3700 Tongeren, Belgium Comus Group of Companies
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Abstract: Solid State Relays Datasheet WG F Comus International NV Overhaamlaan 40 3700 Tongeren , data WG F. 50 D 30 100 D 15 200 D 10 400 D 05 Input circuit Control voltage range , temperature -20.+80 ° C We recommend external contact protection (diode, RC-snubber) for inductive loads 1 Solid State Relays Datasheet WG F Comus International NV Overhaamlaan 40 3700 , diagrams WG F 50 D 30 WG F 100 D 15 H ea t s ink K/ W H e at sink K/ W 12 25 Lload Comus Group of Companies
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Abstract: diode forward characteristics, chip level $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR , rated values indicate limits beyond which damage to the device may occur $%% 6ZLW]HUODQG /WG , emitter saturation voltage is given at chip level $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW , thermal resistance junction to case Rth(j-c)IGBT 0.009 K/W Diode thermal resistance junction to case Rth(j-c)DIODE 0.017 K/W Thermal resistance case to heatsink Rth(c-h) per module ABB Automation
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L3DN70 CH-5600
Abstract: ] )LJ Typical diode forward characteristics, chip level $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV , rated values indicate limits beyond which damage to the device may occur $%% 6ZLW]HUODQG /WG , saturation voltage is given at chip level $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH , junction to case Rth(j-c)IGBT 0.009 K/W Diode thermal resistance junction to case Rth(j-c)DIODE 0.017 K/W Thermal resistance case to heatsink Rth(c-h) per module, grease = 1W/m x K ABB Automation
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Abstract: indicate limits beyond which damage to the device may occur $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV , 2) Collector emitter saturation voltage is given at chip level $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV , to case Diode thermal resistance junction to case Thermal resistance case to heatsink 6\PERO &RQGLWLRQV Rth(j-c)IGBT Rth(j-c)DIODE Rth(c-h) per module, grease = 1W/m x K 0.006 PLQ W\S PD[ 8QLW 0.009 K , 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH Doc. No ABB Automation
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Abstract: indicate limits beyond which damage to the device may occur $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV , ) Collector emitter saturation voltage is given at chip level $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV , to case Diode thermal resistance junction to case Thermal resistance case to heatsink 6\PERO &RQGLWLRQV Rth(j-c)IGBT Rth(j-c)DIODE Rth(c-h) per module, grease = 1W/m x K 0.006 PLQ W\S PD[ 8QLW 0.009 K , 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH Doc. No ABB Automation
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Abstract: rated values indicate limits beyond which damage to the device may occur $%% 6ZLW]HUODQG /WG , saturation voltage is given at chip level $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH , to case Rth(j-c)IGBT 0.0085 K/W Diode thermal resistance junction to case Rth(j-c)DIODE , Weight PD[ x 8QLW mm mm 19 mm 32 1500 gr $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV , ]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH Doc. No. 5SYA ABB Automation
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jc 817

Abstract: rated values indicate limits beyond which damage to the device may occur $%% 6ZLW]HUODQG /WG , emitter saturation voltage is given at chip level $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW , IGBT thermal resistance junction to case Rth(j-c)IGBT 0.007 K/W Diode thermal resistance junction to case Rth(j-c)DIODE 0.012 K/W Thermal resistance case to heatsink Rth(c-h) per , 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH Doc. No
ABB Automation
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jc 817
Abstract: ] 3 4 )LJ Typical diode forward characteristics, chip level $%% 6ZLW]HUODQG /WG , indicate limits beyond which damage to the device may occur $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV , saturation voltage is given at chip level $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH , level 7KHUPDO SURSHUWLHV 3DUDPHWHU IGBT thermal resistance junction to case Diode thermal resistance junction to case Thermal resistance case to heatsink 6\PERO &RQGLWLRQV Rth(j-c)IGBT Rth(j-c)DIODE Rth(c-h ABB Automation
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Abstract: °C )LJ Typical diode forward characteristics, chip level $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV , indicate limits beyond which damage to the device may occur $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV , 2) Collector emitter saturation voltage is given at chip level $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV , to case Diode thermal resistance junction to case Thermal resistance case to heatsink 6\PERO &RQGLWLRQV Rth(j-c)IGBT Rth(j-c)DIODE Rth(c-h) per module, grease = 1W/m x K 0.006 PLQ W\S PD[ 8QLW 0.007 K ABB Automation
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8-12 GHz Yig Tuned Oscillator

Abstract: PM7015X oscillator Sweep oscillator YIG-tuned oscillator Diode modulator YIG-tuned oscillator YIG-tuned oscillator , ". 4 Alphabetical index a Adapters wg. to coax. 69 Adapters double ridge wg. to coax. 69 , 60-61 t Transitions wg. to coax. 69 Tuning heads 17 W Waveguide data 80-81 Waveguide rotary joints 44-53 , element, either transistor or diode, is carefully reduced in the oscillator design. Tuning current For
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OCR Scan
8-12 GHz Yig Tuned Oscillator PM7015X PM7892 electromagnetic pulse generator jammer yig oscillator hp PM7288X MIL-Q-9858 MIL-C-45662 S-126 17173-SILAB-S S-163
Abstract: 660 ns Tvj = 25 °C 32 mJ Tvj = 125 °C 53 mJ $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV , 1 1.5 2 0 2.5 50 100 )LJ Typical diode forward characteristics 200 , 2000 -1200 2400 0 0 Typical diode reverse recovery behaviour 400 600 800 1000 , $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH Doc. No , 1) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd ABB Automation
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5SYA1662-00 5SMX12K1701 5SYA2033-01

f400d

Abstract: mosfet wit frequency range Solid State Relays Datasheet WG F Comus International Bvba Overhaamlaan 40 3700 Tongeren , data WG F. 50 D 30 100 D 15 200 D 10 400 D 05 Input circuit Control voltage range , protection (diode, RC-snubber) for inductive loads page 1 www.comus.com Rev. 2 ECN 06030601 , 6900 - Assemtech, UK : +44 (0) 1255 862 236 Solid State Relays Datasheet WG F Comus , : info@comus.be www.comus.be Derating diagrams WG F 100 D 15 WG F 50 D 30 H ea t s ink K/ W H e a
Comus Group of Companies
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f400d mosfet wit frequency range diode wg WG s 35 comus wg f 100 d 15 wg 8 s
Abstract: , 600 ns Switch : 5SMX12K1701 10 mJ $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW , -25 -800 -1000 IRM 0 VR -50 -75 400 800 1200 6 Typical diode reverse , 50 IR [A] )LJ Typical diode forward characteristics 75 125 IF [A] VF [V] )LJ , /dt [A/µs] )LJ Typical reverse recovery vs. di/dt $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV , instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA2033-01 ABB Automation
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5SYA1660-01
Abstract: µC ns ns mJ mJ $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV , Typical diode forward characteristics )LJ Typical reverse recovery characteristics vs. forward , 0 0 400 800 1200 1600 di/dt [A/µs] 0 2000 )LJ Typical diode reverse recovery behaviour )LJ Typical reverse recovery vs. di/dt $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR , ) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors ABB Automation
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5SYA1660-02
Abstract: 5SMX12M3300 $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH , 300 )LJ Typical diode forward characteristics )LJ Typical reverse recovery , 600 di/dt [A/µs] 800 1000 )LJ Typical diode reverse recovery behaviour )LJ Typical reverse recovery vs. di/dt $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH , assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No ABB Switzerland
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5SYA1661-00
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