500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
TMS27C040-100JE Texas Instruments 512KX8 UVPROM, 100ns, CDIP32, 0.600 INCH, WINDOWED, CERDIP-32 visit Texas Instruments
TMS27PC256-100NE4 Texas Instruments 32KX8 OTPROM, 100ns, PDIP28 visit Texas Instruments
TMS27PC512-100FME Texas Instruments 64KX8 OTPROM, 100ns, PQCC32 visit Texas Instruments
TMS27PC512-10DDL Texas Instruments 64KX8 OTPROM, 100ns, PDSO32 visit Texas Instruments
TMS27PC512-10NE4 Texas Instruments 64KX8 OTPROM, 100ns, PDIP28 visit Texas Instruments
TMS28F210-10C2FNQ Texas Instruments 64KX16 FLASH 12V PROM, 100ns, PQCC44 visit Texas Instruments

diode trr 100ns sod-123

Catalog Datasheet MFG & Type PDF Document Tags

EIAJ ED-4701 B-121

Abstract: ICF-SW77 , FRD 31DF2 Ver. 2A, 10V/DIV. Hor. 20ns/DIV. FRD 30DL4, SBD 31DQ04 11 trr 100ns 50kHz . trr 100ns FRED (Fast Recovery Epitaxial Diode) . trr . 13 FRD , . trr 100ns FRD 28V, trr 20ns SBD 16V . 15 FRD , had "improved" the diode by using faster diffused junctions. (by Jerrold Fout / http , . . " ", "50/60Hz trr FRD ", " " . 2
Nihon Inter Electronics
Original
1N538 FCH10A15 FCF10A20 EIAJ ED-4701 B-121 ICF-SW77 200V 50A mos fet FRD 31DF2 NSQ03A03L 50/60H KSQ60 KSF30

diode smd ED 74

Abstract: 200v dc 10A buck converter Barrier Diode 9 3A 100ns 5A -di/dt=50A/us 400ns 100ns 14A - FRD 0 , . What I found was that the manufacturer had "improved" the diode by using faster diffused junctions , Io 25 200V FRD 5A ×2 VF 5A 25 100 1mA Max. 20uA Max. trr 5A 50A/us 25 , /N VF (V) Max.@25 0.39 0.47 0.56 Tj=100 0.2A SOD-123 1A / 30V SODEP10LA03 EP10QY03 , : BD 12 dP/dTj 11 SOD-123 1A/30V SBD3 100
Nihon Inter Electronics
Original
diode smd ED 74 200v dc 10A buck converter smps 10w 12V FRD FCF10A20 VFIR 12v 50w smps 2005/O ED-4701 B-111 B-112 B-121 IF10A

10a 400V ultra fast diode d2pak

Abstract: schottky diode 60V 80A 50ns ­ trr (600V) 75ns 75ns 100ns 50ns 100ns 100ns ­ trr (1000V) ­ , ) 50ns ­ 25ns 35ns 25ns trr (600V) ­ ­ ­ 35ns ­ trr (800V) 100ns ­ , SINGLE SINGLE SINGLE SINGLE VRRM (VOLTS) PINOUT Dual Common Cathode (Ratings Per Diode , CMR1F-10M VF MAX @ IF = IO 1.3V 1.3V IR MAX @ VRRM 10A 5.0A trr (200V) 150ns 150ns trr (400V) 150ns 150ns trr (600V) 250ns 250ns trr (1000V) ­ 500ns
Central Semiconductor
Original
CMMR1-02 CMR1-02M CMMR1-04 CMMR1-06 CMMR1-10 10a 400V ultra fast diode d2pak schottky diode 60V 80A diode schottky 600 volt smb diode trr 100ns sod-123 diode schottky 1000V 10a sod-123 trr 75ns CMR1-02 CMR2-02 CMR3-02
Abstract: 2 4 6 VR (V) .01 uF PVV = 100nS Test Device Under Test Trr IF 5K Ohms 50 , 1N4448W High Speed Switching Diode Data Sheet Description Mechanical Dimensions 1N4448W INCHES SOD-123 1. CATHODE Features 2. ANODE DIM A B C D E F G H MM MIN 0.055 , n FAST SWITCHING DIODE n MEETS UL SPECIFICATION 94V-0 n ELECTRICALLY IDENTICAL TO JEDEC , 4 . 1N4448W High Speed Switching Diode Data FCI
Original
1N4448

sony flyback transformer

Abstract: smps repair circuit FRD and Standard Recovery Diode Ver. 5A/DIV. Hor. 100ns/DIV. Sample 30D4 and 30DL4 2 FRD and SBD , suggests that 28V and 16V of peak reverse recovery voltages are appeared each for the FRD with 100ns trr , Approximately Figure 27 Timing Chart Diode manufactures sometimes define their trr specifications under , TABLE of CONTENTS Diode - EMI and Efficiency-­-­ Rectification Noise , - 2 5 7 8 1 Fast Recovery Diode-­ 2 FRD and SBD
Nihon Inter Electronics
Original
sony flyback transformer smps repair circuit ultrasonic transducers 48V fast recovery diode 600v 5A sony flyback transformer datasheet Ultrasonic Cleaning Transducer
Abstract: BAS19 thru BAS21 Small-Signal Diodes Features â'¢ Silicon Epitaxial Planar Diode â'¢ Fast switching diode in case SOT-23, especially suited for automatic insertion. â'¢ These diodes are also available in other case styles including: the SOD-123 case with the type designations BAV19W to BAV21W , VR = 0 f = 1MHz â'" â'" 5 pF trr IF = 30mA, IR = 30mA Irr = 3mA, RL = 100â"¦ â , of reverse pulse reverse pulse duration tp(tot) = 2Âus δ = 0.0025 tr = 0.6ns tp = 100ns tr = General Semiconductor
Original
BAV101 BAV103 DO-35 BAV19 BAV21 BAV19WS

A8 diode sot-23

Abstract: melf diode marking ) · Silicon Epitaxial Planar Diode · Fast switching diode in case SOT-23, especially suited for automatic insertion. · These diodes are also available in other case styles including: the SOD-123 case , - Ctot VR = 0 f = 1MHz - - 5 pF trr IF = 30mA, IR = 30mA Irr = 3mA , 100ns tr = 0.35ns C < 1pF Oscilloscope - rise time - cicuit capitance* Output signal *C =
Vishay Semiconductors
Original
BAV21WS A8 diode sot-23 melf diode marking BAS21 SOD323 bav21 a82 BAS21 A82 MELF pad layout BAS20 E8/10K

BAS21 SOD323

Abstract: A8 diode sot-23 BAS19 thru BAS21 Small Signal Diodes Features · Silicon Epitaxial Planar Diode · Fast switching diode in case SOT-23, especially suited for automatic insertion. · These diodes are also available in other case styles including: the SOD-123 case with the type designations BAV19W to BAV21W, the , 5 pF trr IF = 30mA, IR = 30mA Irr = 3mA, RL = 100 - - 50 ns Capacitance , duration tp(tot) = 2us = 0.0025 tr = 0.6ns tp = 100ns tr = 0.35ns C < 1pF Oscilloscope - rise
General Semiconductor
Original
sot-23 marking codes a8
Abstract: 1N4148W High Speed Switching Diode Data Sheet Description Mechanical Dimensions 1N4148W INCHES SOD-123 1. CATHODE Features 2. ANODE DIM A B C D E F G H MM MIN 0.055 , n FAST SWITCHING DIODE n MEETS UL SPECIFICATION 94V-0 n ELECTRICALLY IDENTICAL TO JEDEC , 4 . 1N4148W High Speed Switching Diode Data , 0 50 100 150 2 200 PVV = 100nS Test Device Under Test 50 Ohms RG = 50 Ohms FCI
Original
1N4148

TOT - 4301

Abstract: BAS21 SOD323 Epitaxial Planar Diode · Fast switching diode in case SOT-23, especially suited for automatic insertion. · These diodes are also available in other case styles including:the SOD-123 case with the type , current Dynamic forward resistance Diode capacitance Reverse recovery time Test condition IF = 100 mA IF = , = 3 mA Part Symbol VF VF IR IR rf Ctot trr 5 5 50 Min Typ. Max 1.0 1.25 100 100 Unit V V nA uA pF , 0.6ns tp = 100ns tr = 0.35ns C < 1pF Input signal Waveforms; IR = 3 mA Oscilloscope - rise time
Vishay Semiconductors
Original
TOT - 4301 BAV10 BAS19-GS18 BAS19-GS08 88/540/EEC 91/690/EEC D-74025

BAV21W-V

Abstract: BAS21-V-GS08 Features · Silicon epitaxial planar diode · Fast switching diode in case SOT-23, especially suited for automatic insertion. · These diodes are also available in other case styles including: the SOD-123 case , = IR = 30 mA, RL = 100 , Irr = 3 mA Dynamic forward resistance Diode capacitance Unit 1.0 , mA Min. Typ. trr 50 ns 5 For technical questions within your region, please , 0.0025 tr = 0.6ns tp = 100ns tr = 0.35ns C < 1pF Oscilloscope - rise time - cicuit capitance* *C
Vishay Semiconductors
Original
BAS19-V BAS20-V BAS21-V BAV21W-V BAS21-V-GS08 marking A82 SOT-23 BAV19W-V BAV19-V

yna sot23

Abstract: BAS21 SOD323 v G eneral S e m ic o n d u c t o r BAS19thru BAS21 Small Signal Diodes Features · Silicon Epitaxial Planar Diode · Fast switching diode in case SOT-23, especially suited for automatic insertion. ·These diodes are also available in other case styles including: the SOD-123 case with the type , ) trr I f = 3 0m A , I r = 3 0m A Irr = 3m A , R l = 100S2 50 ns (1 )Device on fiberglass , 2|*s Ò = 0.0 0 25 tr = 0.6ns tp = 100ns tr = 0 .3 5 ns C < 1pF O scillo sco p e - rise tim e -
-
OCR Scan
yna sot23 diode ep sod-323 BAV21ws E8

BAV19WS-V

Abstract: BAV21W-V Features · Silicon epitaxial planar diode · Fast switching diode in case SOT-23, especially suited for automatic insertion. · These diodes are also available in other case styles including: the SOD-123 case , = IR = 30 mA, RL = 100 , Irr = 3 mA Dynamic forward resistance Diode capacitance Unit 1.0 , mA Min. Typ. trr 50 ns 5 For technical questions within your region, please , 0.0025 tr = 0.6ns tp = 100ns tr = 0.35ns C < 1pF Oscilloscope - rise time - cicuit capitance* *C
Vishay Semiconductors
Original
BAV19WS-V BAV21-V BAV21WS-V AEC-Q101 2002/95/EC 2002/96/EC
Abstract: Features · Silicon epitaxial planar diode · Fast switching diode in case SOT-23, especially suited for automatic insertion. · These diodes are also available in other case styles including: the SOD-123 case with , otherwise specified Parameter Forward voltage Leakage current Dynamic forward resistance Diode capacitance , mA VR = 0, f = 1 MHz IF = IR = 30 mA, RL = 100 , Irr = 3 mA Symbol VF VF IR IR rf Ctot trr 5 5 50 Min , time of reverse pulse reverse pulse duration tp(tot) = 2 us = 0.0025 tr = 0.6ns tp = 100ns tr = 0.35ns Vishay Semiconductors
Original
GS18/10K GS08/3K BAS19-V-GS18 BAS19-V-GS08 BAS20-V-GS18 BAS20-V-GS08

TOT - 4301

Abstract: Features · Silicon Epitaxial Planar Diode · Fast switching diode in case SOT-23, especially suited for automatic insertion. · These diodes are also available in other case styles including:the SOD-123 case with , Leakage current Dynamic forward resistance Diode capacitance Reverse recovery time Test condition IF = 100 , 100 , Irr = 3 mA Symbol VF VF IR IR rf Ctot trr 5 5 50 Min Typ. Max 1.0 1.25 100 100 Unit V V nA uA , 0.6ns tp = 100ns tr = 0.35ns C < 1pF Input signal Waveforms; IR = 3 mA Oscilloscope - rise time
Vishay Semiconductors
Original
BAS20-GS18 BAS20-GS08 BAS21-GS18 BAS21-GS08
Abstract: Features 3 â'¢ Silicon Epitaxial Planar Diode â'¢ Fast switching diode in case SOT-23, especially , SOD-123 case with the type designations BAV19W to BAV21W, the MiniMELF case with the type designation , , Tj = 150 °C Leakage current IR 100 ÂuA IF = 10 mA rf Diode capacitance VR = , www.vishay.com 2 â"¦ 5 Ctot 5 pF trr 50 ns Document Number 85540 Rev. 1.4, 01 , ) = 2 Âus δ = 0.0025 tr = 0.6ns tp = 100ns tr = 0.35ns C < 1pF Output signal *C = Vishay Semiconductors
Original

marking A82 SOT-23

Abstract: Features · Silicon epitaxial planar diode · Fast switching diode in case SOT-23, especially suited for automatic insertion. · These diodes are also available in other case styles including: the SOD-123 case with , otherwise specified Parameter Forward voltage Leakage current Dynamic forward resistance Diode capacitance , mA VR = 0, f = 1 MHz IF = IR = 30 mA, RL = 100 , Irr = 3 mA Symbol VF VF IR IR rf Ctot trr 5 5 50 Min , time of reverse pulse reverse pulse duration tp(tot) = 2 us = 0.0025 tr = 0.6ns tp = 100ns tr = 0.35ns
Vishay Semiconductors
Original
BAS21-V-GS18

TOT - 4301

Abstract: BAV21V Features · Silicon Epitaxial Planar Diode · Fast switching diode in case SOT-23, e3 especially suited for automatic insertion. · These diodes are also available in other case styles including:the SOD-123 case with , Parameter Forward voltage Leakage current Dynamic forward resistance Diode capacitance Reverse recovery time , IF = IR = 30 mA, RL = 100 , Irr = 3 mA Symbol VF VF IR IR rf Ctot trr 5 5 50 Min Typ. Max 1.0 1.25 , = 0.0025 tr = 0.6ns tp = 100ns tr = 0.35ns C < 1pF Input signal Waveforms; IR = 3 mA
Vishay Semiconductors
Original
BAV21V
Abstract: Features · Silicon Epitaxial Planar Diode · Fast switching diode in case SOT-23, e3 especially suited for automatic insertion. · These diodes are also available in other case styles including:the SOD-123 case with , Parameter Forward voltage Leakage current Dynamic forward resistance Diode capacitance Reverse recovery time , IF = IR = 30 mA, RL = 100 , Irr = 3 mA Symbol VF VF IR IR rf Ctot trr 5 5 50 Min Typ. Max 1.0 1.25 , 2 us = 0.0025 tr = 0.6ns tp = 100ns tr = 0.35ns C < 1pF Input signal Waveforms; IR = 3 mA Vishay Semiconductors
Original

BAS21-V

Abstract: bav21 a82 Features · Silicon Epitaxial Planar Diode · Fast switching diode in case SOT-23, e3 especially suited for automatic insertion. · These diodes are also available in other case styles including:the SOD-123 , VR = VRmax, Tj = 150 °C IR 100 uA Dynamic forward resistance IF = 10 mA rf Diode , www.vishay.com 2 5 Ctot 5 pF trr 50 ns Document Number 85540 Rev. 1.5, 22 , 0.0025 tr = 0.6ns tp = 100ns tr = 0.35ns C < 1pF *C = oscilloscope input capactitance + parasitic
Vishay Semiconductors
Original
Showing first 20 results.