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diode t25 4 L0

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 1200 SK 70 DH 12 1700 16C0 SK 70 DH 16 Symbol Conditions Values Units 'o T^-80 -C 63 A 'f SM 9 T^-25 "C; 10 ms 370 A T^ - 125 *C;10ms 280 A Pt T^-25 -C; 8.3 . 10 ms 686 A*$ T^- 125 -C; 8,3.10 ms 366 A*» VT T^-25 -C; 76A max 1,9 V VT(TO) V126 "ft 1 V t T^-126 -C 10 mil 'o:- 'rd V126'c:voo-WvR:>-vRay max. 10 mA V T^ - 25 -C; l0 - 1 A; di^'dt - 1 Afps 1 H5 V Vd-0.67VO3w 2 H5 (dv.'dtjç, T , T^-25 -C; d.c. min. 2 V â'¢or T^-25 -C; d.c. min. 100 mA voo T^ - 125 -C; d.c max. 0,26 V 'OD T -
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DIODE T25 4 H5 T25 4 h5 DIODE T25 4 DIODE T25 DIODE T25 4 C SEMITOP weight 67VO3 R0-33
Abstract: ,6 a Forward Transconductance g fs Id=2,5A Vds=25V 2,0 4,0 S Input Capacitance C 155 VDS=25V Vgs , L=100mH TC^-C 5,0 A Diode Forward On-Voltage V SD 1f=2XIdr VGS=0V Tch=25°C 0,95 1,45 V Reverse , ): 80ps pulse test Tc-25'C 40 £0 Drain-Source On-State Resistance Rum = *Ta); l0=2.5A Vos'lOV T . S 100 1S0 Typical Transfer Characteristics Id=1VgsI; act» pulse te&t; Vos=25V, T^=25*C 1 , r Typical Transconductance g*=f(l0); 80|js pulse test; Vos=25V; S2, 1 ê «D [Al Id [A] â'" -
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2SK2526-01 DIODE T25 4 d0 E2367TE
Abstract: Driver (Dimensions in mm) (JEDEC TO-22QAB) ABSOLUTE MAXIMUM RATINGS (T.=25 °C) Item Symbol Rating , Current ÏOfmbe* 40 A Body-Drain Diode Reverse Drain Current lo. 10 A Channel Dissipation p,r 50 W , \ ELECTRICAL CHARACTERISTICS (T.=25 °C) SO 100 Cue Tonptruure 7c it) Item Symbol Test Condition min. typ , /i - 70 - ns Fall Time tf â'" 45 - ns Body-Drain Diode Forward Voltage Vo, I/=10A, VCJ=0 - 1.2 - V Body-Drain Diode /r=10A, VCJ=0 200 ns Reverse Recovery Time di,/dt=50A/ms â'¢Pulse Test -
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2SK551 2sk5s diode t25 4 fo DIODE T25 4 IO Hitachi Scans-001 0D1306H
Abstract: N AMER PHILIPS/DISCRETE 2SE J> bbS3131 a020t.'i5 7 PowerMOS transistor Fast Recovery Diode , reversé diode, particularly suitable for motor control applications, eg. in full bridge configurations , on-state 1.3 1.5 1.7 a . resistance tâ'ž Diode reverse recovery time 250 250 250 ns Dimensions in mm Net Mass: 2g Pinning: 1 = Gate 2 = Drain 3 = Source 4,5 max 1.3 0,9 max (3x) 2,54 2,54 5,9. min 15,8 max 0,6 2,4 3- Fig. 1 T0220AB; drain connected to mounting base. Notes 1 -
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BUK655-500A BUK655-500B BUK655-500C dlp afe 1000 S3131 T-37-/3 BUK655
Abstract: T25 IRF9540N Peak Diode Recovery dv/dt Test Circuit D.U.T* Circuit Layout Considerations â , 0 . 1 1 7 Q l0 = - 1 9 A Description Fifth Generation HEXFETs from International Rectifier , Diode Recovery dv/dt G > Operating Junction and Storage Temperature Range Soldering Temperature, for , -10V, Id = -11A ® 0.117 a â'" -4.0 v -2.0 Vds = Vgs. Id = -250pA Vqs = -50V, l0 = -11A 5.3 , - 20V nA -100 -VG = -20V S l0 =-11A 97 -S 15 nC VD = -80V -51 Vqs = -10V, See Fig -
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F1010 IRF1010 2BR9246
Abstract: '¢ Low On-Resistance Ros (on) S 0 Q45 Si. Vc 10 V, lD â'" 10 A 4 V, l0- 10 A ftDS (on) £ 0.065 Q, Vr,s â'¢ Capable of 4 V Gate Drive â'¢ Low Drive Current â'¢ High Speed Switching â'¢ High Density , Impulse»' 40 A Cody Drain Diode I IMI 10 A Reverse Drain Current Channel Dissipation Pch(Tc = 25t}" 28 W Channel Dissipation Pel." 4 w Channel Temperature Tch 150 "c Storage Temperature Tstg â ,  95 - IIS Turn-off Delay Time tdu>ffi Ri =3iJ - 300 - ns Fall Time tf - ]70 - lis Ko -
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4AK17 2SK972 2SK1095 SP-10 DIODE T25 4 ko selenoid driver SELENOID ralton A-1.000-S-SP n channel j fet
Abstract: ^£25 "C; VIS = 10 V - 60 A Po Total power dissipation T^.^25 -C - 40 W T$lg Storage temperature - -55 , clamping energy VIS = 0V T^S2S -C; Idm=15A; VDD < 20 V; inductive load Tmt> , protection circuits are functional. 4 The device is able to sefl-protect against a short circuit load , voltage Ve = 0 V; l0= 10 mA 50 - - V v(cl)dss loss 'oss Idss Drain-source clamping voltage Zero input , MOSFET 1.0 11 2.5 13 4 5.0 mA V kii 1 The short circuit load protection is able to save the device -
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BUK100-50GS 00303M7 00303S4 WIIS25
Abstract: vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage ^ , Drain Qarreit [A] V æ , haracteristic Drain-to-Source Voltage Continuous Drain Current (T^=25 'C) Continuous Drain Current (1^=100 'C , Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (t= 2 5 "c) Linear Derating Factor , ±30 314 2.8 4 2.0 40 0.32 -5 5 to +150 Units V A A V mJ A mJ V/ns W PD W/'C c 300 , =0V,lD =250nA l0=250^A Vgs=30V V gs=-30V V ds=800V V ds=640V,Tc=1 25'C V gs=10V,Id=0.85A V ds=50V,Io -
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SSS4N80AS
Abstract: 10 100 1000 VDS/V Fig.4. Safe operating area. T^ = 25 'C l0 & Iqm = f(Vos); Iqm single pulse , \ \ / \ / \ ( \ 4 e IO/A 10 Fig.9. Typical transconductance, T-25 'C. 9fs = f(lo); conditions: Vos = 25 V RDS(ON , N AMER PHILIPS/DISCRETE 2SE » bbS3131 Q020t.'i5 7 PowerMOS transistor Fast Recovery Diode FET , mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reversé diode , resistance tâ'ž Diode reverse recovery time 250 250 250 ns Dimensions in mm Net Mass: 2g Pinning: 1 = -
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1c7s BUK655-500 T0220 1E-01 IE-03
Abstract: , Gate-Scuroe \fc»ltage f\*3 Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Vottage , (Max ) @ Vos*400V Low Rqs(on) : 0.162 £2 (Typ.) S S H 2 5 N 4 0 A BV0SS = 400 V R ow , Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation , VG S =0V,VD S =25V,f =1MHz See Fig 5 VD D =200V. Id=25A, Re*5.3Û See Fig 13 VO S =320V, VG S =10V, l0=25A See Fig C & Fig 12 ® © ® © Source-Drain Diode Ratings and Characteristics Symbol Is Ism VS d % Qr -
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SSH25N40A SSH25BH0A
Abstract: (Max.) @ VD S = 800V Low R0S(0n> : 3.400 ft (Typ.) SSS4N80A BVdss = 800 V ^DS(on) = 4 .0 Î2 , Characteristic Drain-to-Source Voltage Continuous Drain Current (T^=25 c) Continuous Drain Current (Tc=100 c , Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (1^=25 'C) Linear Derating Factor , for 5-seconds © © 0 @ O Value 800 2.5 1.6 16 Ì 30 250 2.5 4 2.0 40 0.32 -5 5 to +150 Units V A A , VG S =0V,VD S =25V,f =1MHz pF See Fig 5 Voo=400V, l0=2A, ns Rg=16 i i See Fig 13 V ds=640V,Vgs -
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Abstract: T25 °c V0S = 15V OS(on) (0) 0 12 3 4 lp(a) Gate , uos _ DIODE 4- FAST G M-! X â² DIODE ; L=100^H âº8 1-»8 98 o 0 kl o.u.r. asn i 3.3 1000 , TRANSISTOR TYPE Vdss RoS(on) Id STH7NA80 STH7NA80FI 800 V 800 V < 1.9 n < 1.9 n 6.5 A 4 A . TYPICAL RDS(op , 20 kft) 800 V Vgs Gate-source Voltage ± 30 V Id Drain Current (continuous) at T0 = 25 °C 6.5 4 A Id Drain Current (continuous) at Tc = 100 °C 4 2.5 A Idm(») Drain Current (pulsed) 26 26 A -
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ISOWATT218 STH7NA80/FI SC05970 EDD11
Abstract: JJL4 2.7 > Maximum Ratings and Characteristics 'L=0,277mH, Vcc=12V > Equivalent Circuit Item Symbol , Avalanche Capability 1 AV L = 100pH Tch=25°C 50 A Diode Forward On-Voltage V SD If=2xIdr Vgs=0V Tch , ; Tc-25'C Typical Forward Transconductance vs. ID !K=f(b); «Ops pulse test Voe=25V; T^=25*C nf Gate Threshold Voltage vs. Ta, VowrUT»); lo=1mA: Vos=Vrj r+f I 1 1 ; 4- rr+ . till trri- â  ""T! tf-l fifr â iiji 1 rn m»cT . 4{M -1 H- â â flft rt m -
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2SK2688-01 US50A ISO 8015 KF 520
Abstract: No. 1 2 3 4 5 6 7 8 Function TE cooler, negative T herm istor lead 1 T herm istor lead 2 Laser diode , SONY SLD322XT Package O utline Unit : mm High Pow er Density 0.5 W Laser Diode D escription The SLD 322X T is a high power, gain-guided laser diode produced by M O C VD m e th o d "1 . C om pared lo the SLD 300 Series, Ihis laser diode has a high brightness output with a doubted optical density which can be achieved by Q W -S C H stru ctu re "'. Tem perature of laser diode is controlled by -
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DIODE T25 4 Jo cd photo diode
Abstract: speed 8MHz Latched data outputs CMOS compatible inputs Forward and reverse shifting options Diode to VP , package. 4. For operation above 25°C ambient, derate linearly to 70°C at 12mW/°C. 1. -0.5V to +16V , Current Leakage, any input l,L Current Leakage, any input HV Output Clamp Diode Voltage HV Output when , GND V dd = V dd max, fCLK = 8 MHz l0 = 100|iA l0 = 100|iA V|N = VD D V,N = 0 l0L = -100mA l0H = -20mA , ground. 2. Apply VDD. 3. Set all inputs (Data, CLK, Enable, etc.) to a known state. 4. Apply VPP -
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HV5308DJ HV5408DJ HV5308PJ HV5408PJ HV5308PG HV5408PG
Abstract: Forward and reverse shifting options â¡ Diode to VP allows efficient power recovery P These , total power dissipated in the package. 4. For operation above 25°C ambient, derate linearly to 70 , Register Output Voltage 1 l|H l|L V l0 = 100|jA V l0 = 100|oA Current Leakage, any , o HV Output Clamp Diode Voltage X I o o o > > > HV Output when Sourcing < o r â , . Apply VDD. 3. Set all inputs (Data, CLK, Enable, etc.) to a known state. 4. Apply VPP. Power-down -
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MIL-STD-883 HV5308X RBHV5308DJ HV5408X RBHV5408DJ HV53/HV54
Abstract: / APT5545HN MIN 600 Volts 550 16.5 Amps 15.5 0.40 Ohms 0.45 250 1000 ±100 2 4 nA TYP MAX UNIT b v , .]@25°C RG-1 .8 ß SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol *S Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current © (Body Diode) APT6040HN / APT5540HN , 334 5 668 10 Volts ns nc Amps UNIT *SM VSD »rr Q rr Diode Forward Voltage © (VQS = 0V, ls » -lD , 1 CC LU Q_ 16 ' g s 6V - c o T25 VDg, DRAIN-TO-SOURCE VOLTAGE (VOLTS) HGURE 3 -
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6045h APT6045HN APT5545HN550V15 5540HN 6040HN 554SHN 6045HN
Abstract: diode clamps to Vcc and ground. )6365 7 " ~ D j . ¿à?/- * / · Can perform as: Boolean , High-Drive-Current outputs: ( I o l = 2 4 mA ® V o l =0.5V) for direct bus interface · Inputs and outputs interface directly with TTL, NMOS and CMOS devices · Wide Qperating voltage range: 4.SV to 5.5V · Characterized for operation over industrial and military temperature ranges: . KS74HCTLS: - 4 0 ° C to + 85°C KS54HCTLS: - 5 5 , D5 D6 D7 W H DO D1 D2 D3 D4 D5 06 D7 PIN CONFIGURATION 03 C D2C 1 2 3 4 5 6 7 ; 16 15 14 13 12 11 -
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diode t25 4 d7 S4/74LS 90-XO
Abstract: - 1 6 mA VOL VOL ·oh 0.1 (S0.4) V o d VI, V lp«16m A. Vc c * 4.5 V I0 »1.1 m A l0 = 2.4m A , ission rate and a high isolation resistance. They have a G a A IA s infrared emitting diode, optically co , not allow ed to ex cee d the maximum perm issible reference voltages. 016 (41 ).^ , \rn- 100(2 &4 , n mA Peak Forward , % tSlOO ms Delay Time (If =16 m A , Vc c =5 V, TA=25°C) High - Low SFH6135 (Rl =4. 1 kO) SFH6136 (Rl = -
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SFH613 9010J CE-300 CE700 H6136 SFH6135/6136
Abstract: Diode Current DC Output Diode Current DC Output Source Sink Current Per Output Pin l0 K lo Icc , M54HC155 M74HC155 SGS-THOMSON m DUAL 2 TO 4 LINE DECODER 3 TO 8 LINE DECODER HIGHSPEED tpD = 12 ns (TYP.) AT Vcc = 5 V LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT TA = 25 °C HIGH NOISE , IMPEDANCE | Ioh | = Iol = 4 mA (MIN.) BALANCED PROPAGATION DELAYS tP L H = tP H L WIDE OPERATING , dual 1-TO-4 line demultiplexers with indi­ vidual strobe inputs (1G and 2G), individual data in -
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54/74LS155 M54HC155F1 M74HC155M1 M74HC155B1R M74HC155C1R M54/74HC155
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