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diode t25 4 L0

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 1200 SK 70 DH 12 1700 16C0 SK 70 DH 16 Symbol Conditions Values Units 'o T^-80 -C 63 A 'f SM 9 T^-25 "C; 10 ms 370 A T^ - 125 *C;10ms 280 A Pt T^-25 -C; 8.3 . 10 ms 686 A*$ T^- 125 -C; 8,3.10 ms 366 A*» VT T^-25 -C; 76A max 1,9 V VT(TO) V126 "ft 1 V t T^-126 -C 10 mil 'o:- 'rd V126'c:voo-WvR:>-vRay max. 10 mA V T^ - 25 -C; l0 - 1 A; di^'dt - 1 Afps 1 H5 V Vd-0.67VO3w 2 H5 (dv.'dtjç, T , T^-25 -C; d.c. min. 2 V •or T^-25 -C; d.c. min. 100 mA voo T^ - 125 -C; d.c max. 0,26 V 'OD T ... OCR Scan
datasheet

3 pages,
76.79 Kb

V126 SEMITOP weight sk 3003 s THYRISTOR tv 930 DIODE T25 4 C DIODE T25 DIODE T25 4 T25 4 h5 diode t25 4 L0 DIODE T25 4 H5 TEXT
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Abstract: ,6 a Forward Transconductance g fs Id=2,5A Vds=25V 2,0 4,0 S Input Capacitance C 155 VDS=25V Vgs , L=100mH TC^-C 5,0 A Diode Forward On-Voltage V SD 1f=2XIdr VGS=0V Tch=25°C 0,95 1,45 V Reverse , ): 80ps pulse test Tc-25'C 40 £0 Drain-Source On-State Resistance Rum = *Ta); l0=2.5A Vos'lOV T . S 100 1S0 Typical Transfer Characteristics Id=1VgsI; act» pulse te&t; Vos=25V, T^=25*C 1 , r Typical Transconductance g*=f(l0); 80|js pulse test; Vos=25V; S2, 1 ê «D [Al Id [A] — ... OCR Scan
datasheet

2 pages,
133.29 Kb

2SK2526-01 diode t25 4 L0 DIODE T25 4 d0 TEXT
datasheet frame
Abstract: Driver (Dimensions in mm) (JEDEC TO-22QAB) ABSOLUTE MAXIMUM RATINGS (T.=25 °C) Item Symbol Rating , Current ÏOfmbe* 40 A Body-Drain Diode Reverse Drain Current lo. 10 A Channel Dissipation p,r 50 W , \ ELECTRICAL CHARACTERISTICS (T.=25 °C) SO 100 Cue Tonptruure 7c it) Item Symbol Test Condition min. typ , /i - 70 - ns Fall Time tf — 45 - ns Body-Drain Diode Forward Voltage Vo, I/=10A, VCJ=0 - 1.2 - V Body-Drain Diode /r=10A, VCJ=0 200 ns Reverse Recovery Time di,/dt=50A/ms •Pulse Test ... OCR Scan
datasheet

4 pages,
243.7 Kb

Hitachi Scans-001 DIODE T25 4 IO diode t25 4 fo 2sk5s 2SK551 diode t25 4 L0 TEXT
datasheet frame
Abstract: N AMER PHILIPS/DISCRETE 2SE J> bbS3131 a020t.'i5 7 PowerMOS transistor Fast Recovery Diode , reversé diode, particularly suitable for motor control applications, eg. in full bridge configurations , on-state 1.3 1.5 1.7 a . resistance t„ Diode reverse recovery time 250 250 250 ns Dimensions in mm Net Mass: 2g Pinning: 1 = Gate 2 = Drain 3 = Source 4,5 max 1.3 0,9 max (3x) 2,54 2,54 5,9. min 15,8 max 0,6 2,4 3- Fig. 1 T0220AB T0220AB; drain connected to mounting base. Notes 1 ... OCR Scan
datasheet

5 pages,
244.92 Kb

T0220AB dlp afe 1000 BUK655-500C BUK655-500B BUK655-500A TEXT
datasheet frame
Abstract: T25 IRF9540N IRF9540N Peak Diode Recovery dv/dt Test Circuit D.U.T* Circuit Layout Considerations â , 0 . 1 1 7 Q l0 = - 1 9 A Description Fifth Generation HEXFETs from International Rectifier , Diode Recovery dv/dt G > Operating Junction and Storage Temperature Range Soldering Temperature, for , -10V, Id = -11A ® 0.117 a — -4.0 v -2.0 Vds = Vgs. Id = -250pA Vqs = -50V, l0 = -11A 5.3 , - 20V nA -100 -VG = -20V S l0 =-11A 97 -S 15 nC VD = -80V -51 Vqs = -10V, See Fig ... OCR Scan
datasheet

8 pages,
244.48 Kb

TEXT
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Abstract: €¢ Low On-Resistance Ros (on) S 0 Q45 Si. Vc 10 V, lD — 10 A 4 V, l0- 10 A ftDS (on) £ 0.065 Q, Vr,s • Capable of 4 V Gate Drive • Low Drive Current • High Speed Switching • High Density , Impulse»' 40 A Cody Drain Diode I IMI 10 A Reverse Drain Current Channel Dissipation Pch(Tc = 25t}" 28 W Channel Dissipation Pel." 4 w Channel Temperature Tch 150 "c Storage Temperature Tstg â , – 95 - IIS Turn-off Delay Time tdu>ffi Ri =3iJ - 300 - ns Fall Time tf - ]70 - lis Ko ... OCR Scan
datasheet

3 pages,
262.04 Kb

SP-10 2SK972 4AK17 n channel fet array n channel j fet ralton A-1.000-S-SP SELENOID selenoid driver 2SK1095 diode t25 4 L0 DIODE T25 4 ko TEXT
datasheet frame
Abstract: ^£25 "C; VIS = 10 V - 60 A Po Total power dissipation T^.^25 -C - 40 W T$lg Storage temperature - -55 , clamping energy VIS = 0V T^S2S -C; Idm=15A; VDD < 20 V; inductive load Tmt> , protection circuits are functional. 4 The device is able to sefl-protect against a short circuit load , voltage Ve = 0 V; l0= 10 mA 50 - - V v(cl)dss loss 'oss Idss Drain-source clamping voltage Zero input , MOSFET 1.0 11 2.5 13 4 5.0 mA V kii 1 The short circuit load protection is able to save the device ... OCR Scan
datasheet

9 pages,
380.88 Kb

T0220AB BUK100-50GS TEXT
datasheet frame
Abstract: vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage ^ , Drain Qarreit [A] V æ , haracteristic Drain-to-Source Voltage Continuous Drain Current (T^=25 'C) Continuous Drain Current (1^=100 'C , Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (t= 2 5 "c) Linear Derating Factor , ±30 314 2.8 4 2.0 40 0.32 -5 5 to +150 Units V A A V mJ A mJ V/ns W PD W/'C c 300 , =0V,lD =250nA l0=250^A Vgs=30V V gs=-30V V ds=800V V ds=640V,Tc=1 25'C V gs=10V,Id=0.85A V ds=50V,Io ... OCR Scan
datasheet

6 pages,
186.69 Kb

SSS4N80AS TEXT
datasheet frame
Abstract: 10 100 1000 VDS/V Fig.4. Safe operating area. T^ = 25 'C l0 & Iqm = f(Vos); Iqm single pulse , \ \ / \ / \ ( \ 4 e IO/A 10 Fig.9. Typical transconductance, T-25 'C. 9fs = f(lo); conditions: Vos = 25 V RDS(ON , N AMER PHILIPS/DISCRETE 2SE » bbS3131 Q020t.'i5 7 PowerMOS transistor Fast Recovery Diode FET , mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reversé diode , resistance t„ Diode reverse recovery time 250 250 250 ns Dimensions in mm Net Mass: 2g Pinning: 1 = ... OCR Scan
datasheet

5 pages,
244.28 Kb

T0220AB BUK655-500C BUK655-500B BUK655-500A BUK655-500 diode t25 4 L0 TEXT
datasheet frame
Abstract: , Gate-Scuroe \fc»ltage f\*3 Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Vottage , (Max ) @ Vos*400V Low Rqs(on) : 0.162 £2 (Typ.) S S H 2 5 N 4 0 A BV0SS = 400 V R ow , Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation , VG S =0V,VD S =25V,f =1MHz See Fig 5 VD D =200V. Id=25A, Re*5.3Û See Fig 13 VO S =320V, VG S =10V, l0=25A See Fig C & Fig 12 ® © ® © Source-Drain Diode Ratings and Characteristics Symbol Is Ism VS d % Qr ... OCR Scan
datasheet

6 pages,
273.38 Kb

TEXT
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Archived Files

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Xilinx 31/03/2004 3037.05 Kb ZIP xapp753.zip
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Kaleidoscope 22/08/2005 11421.08 Kb TGZ bae65022linux.tgz
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Xilinx 11/11/2004 9180.01 Kb ZIP xapp542.zip
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Texas Instruments 08/02/1999 3180.4 Kb ZIP prphrl.zip