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TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor ri Buy
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UC3612DP Texas Instruments UC3612 Dual Schottky Diode ri Buy

diode t25 4 L0

Catalog Datasheet Results Type PDF Document Tags
Abstract: SK 70 DH 12 1700 16C0 SK 70 DH 16 Symbol Conditions Values Units 'o T^-80 -C 63 A 'f SM 9 T^-25 "C; 10 ms 370 A T^ - 125 *C;10ms 280 A Pt T^-25 -C; 8.3 . 10 ms 686 A*$ T^- 125 -C; 8,3.10 ms 366 A*» VT T^-25 -C; 76A max 1,9 V VT(TO) V126 "ft 1 V t T^-126 -C 10 mil 'o:- 'rd V126'c:voo-WvR:>-vRay max. 10 mA V T^ - 25 -C; l0 - 1 A; di^'dt - 1 Afps 1 H5 V Vd-0.67VO3w 2 H5 (dv.'dtjç, T^ , T^-25 -C; d.c. min. 2 V •or T^-25 -C; d.c. min. 100 mA voo T^ - 125 -C; d.c max. 0,26 V 'OD T^ - 125 ... OCR Scan
datasheet

3 pages,
76.79 Kb

V126 THYRISTOR tv 930 SEMITOP weight DIODE T25 DIODE T25 4 C DIODE T25 4 diode t25 4 L0 T25 4 h5 DIODE T25 4 H5 datasheet abstract
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Abstract: ) (JEDEC TO-22QAB) ABSOLUTE MAXIMUM RATINGS (T.=25 °C) Item Symbol Rating Unit Drain-Source Voltage Vm , Body-Drain Diode Reverse Drain Current lo. 10 A Channel Dissipation p,r 50 W Channel Temperature T,t 150 °C , DERATING \ k \ k \ ELECTRICAL CHARACTERISTICS (T.=25 °C) SO 100 Cue , Rl=6il - 40 - ns Turn-off Delay Time W/i - 70 - ns Fall Time tf - 45 - ns Body-Drain Diode Forward Voltage Vo, I/=10A, VCJ=0 - 1.2 - V Body-Drain Diode /r=10A, VCJ=0 200 ns Reverse Recovery Time di ... OCR Scan
datasheet

4 pages,
243.7 Kb

DIODE T25 4 IO 2SK551 diode t25 4 L0 2SK551 abstract
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Abstract: On-Resistance Ros (on) S 0 Q45 Si. Vc 10 V, lD - 10 A 4 V, l0- 10 A ftDS (on) £ 0.065 Q, Vr,s • Capable of 4 , Gate-Source Voltage V , 4 w Channel Temperature Tch 150 "c Storage Temperature Tstg - 55-1-150 V PIN OUTS 2.4. 6, 8 , tf - ]70 - lis Ko , 0 " 25 50 75 100 t25 15Ü /Vmlurm Tfiniieraiur» 7"o (C ) MAXIMUM CHANNEL DISSiPATION CURVE 4AK17 4AK17 ... OCR Scan
datasheet

3 pages,
262.04 Kb

SP-10 selenoid driver SELENOID n channel j fet 4AK17 2SK972 2SK1095 DIODE T25 4 ko datasheet abstract
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Abstract: Transconductance g fs Id=2,5A Vds=25V 2,0 4,0 S Input Capacitance C 155 VDS=25V Vgs=0V f=1MHz 750 1150 pf , Diode Forward On-Voltage V SD 1f=2XIdr VGS=0V Tch=25°C 0,95 1,45 V Reverse Recovery Time trr IF=IDR , Tc-25'C 40 £0 Drain-Source On-State Resistance Rum = *Ta); l0=2.5A Vos'lOV T . S 100 1S0 Typical Transfer Characteristics Id=1VgsI; act» pulse te&t; Vos=25V, T^=25*C 1 , r Typical Transconductance g*=f(l0); 80|js pulse test; Vos=25V; S2, 1 ê «D [Al Id [A] -» ft >3 ... OCR Scan
datasheet

2 pages,
133.29 Kb

2SK2526-01 diode t25 4 L0 DIODE T25 4 d0 2SK2526-01 abstract
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Abstract: Fig.4. Safe operating area. T^ = 25 'C l0 & Iqm = f(Vos); Iqm single pulse; parameter tf Normalised , \ \ / \ / \ ( \ 4 e IO/A 10 Fig.9. Typical transconductance, T-25 'C. 9fs = f(lo); conditions: Vos = 25 V RDS(ON , N AMER PHILIPS/DISCRETE 2SE » bbS3131 Q020t.'i5 7 PowerMOS transistor Fast Recovery Diode FET , field-effect power transistor in a plastic envelope. FREDFET with fast recovery reversé diode, particularly , power dissipation 100 100 100 W RDS(ON) Drain-source on-state 1.3 1.5 1.7 a . resistance t„ Diode ... OCR Scan
datasheet

5 pages,
244.28 Kb

T0220AB diode t25 4 L0 BUK655-500C BUK655-500B BUK655-500A BUK655-500 datasheet abstract
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Abstract: No. 1 2 3 4 5 6 7 8 Function TE cooler, negative T herm istor lead 1 T herm istor lead 2 Laser diode , SONY SLD322XT SLD322XT Package O utline Unit : mm High Pow er Density 0.5 W Laser Diode D escription The SLD 322X T is a high power, gain-guided laser diode produced by M O C VD m e th o d "1 . C om pared lo the SLD 300 Series, Ihis laser diode has a high brightness output with a doubted optical density which can be achieved by Q W -S C H stru ctu re "'. Tem perature of laser diode is controlled by ... OCR Scan
datasheet

6 pages,
193.59 Kb

cd photo diode SLD322XT SLD322XT abstract
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Abstract: N AMER PHILIPS/DISCRETE 2SE J> bbS3131 a020t.'i5 7 PowerMOS transistor Fast Recovery Diode FET , mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reversé diode , . resistance t„ Diode reverse recovery time 250 250 250 ns Dimensions in mm Net Mass: 2g Pinning: 1 = Gate 2 = Drain 3 = Source 4,5 max 1.3 0,9 max (3x) 2,54 2,54 5,9. min 15,8 max 0,6 2,4 3- Fig. 1 T0220AB T0220AB; drain connected to mounting base. Notes 1. Observe the general handling ... OCR Scan
datasheet

5 pages,
244.92 Kb

T0220AB BUK655-500C BUK655-500B BUK655-500A datasheet abstract
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Abstract: 0020427 4 - PowerMOS transistor BUK446-1000A BUK446-1000A BUK446-1000B BUK446-1000B REVERSE DIODE RATINGS AND CHARACTERISTICS Th9 = , Typical reverse diode current. IF = f(VSDS); conditions: Vgs= 0 V; parameter 7} 12 10 a 6 4 2 0 VGS/V , current (DC) 1.7 1.5 A P.ot Total power dissipation 30 30 W RqS(ON) Drain-source on-state resistance 4 5 n , Drain-source on-state resistance Vos = o V; lD = 0.25 mA VDS = VGS; l0 = 1 mA VDS = 1000 V; Ves = 0 V; T: = 25 , Turn-on rise time Turn-off delay time Turn-off fall time VDD = 30 V; l0 = 2.3 A; VQS = 10 ViRQ^SOQ; Rg8n = ... OCR Scan
datasheet

5 pages,
241.57 Kb

BUK446-1000B transistor k446 BUK446-1000A BUK446 datasheet abstract
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Abstract: T25 °c V0S = 15V OS(on) (0) 0 12 3 4 lp(a) Gate , 4- FAST G M-! X - DIODE ; L=100^H -8 1-»8 98 o 0 kl o.u.r. asn i 3.3 1000 G7 SCS-THOMSON , TRANSISTOR TYPE Vdss RoS(on) Id STH7NA80 STH7NA80 STH7NA80FI STH7NA80FI 800 V 800 V < 1.9 n < 1.9 n 6.5 A 4 A . TYPICAL RDS(op , Gate-source Voltage ± 30 V Id Drain Current (continuous) at T0 = 25 °C 6.5 4 A Id Drain Current (continuous) at Tc = 100 °C 4 2.5 A Idm(») Drain Current (pulsed) 26 26 A P.O. Total Dissipation at Tc = 25 °C ... OCR Scan
datasheet

7 pages,
589.17 Kb

STH7NA80 STH7NA80FI STH7NA80 abstract
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Abstract: On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage ^ , Drain Qarreit [A] V æ , haracteristic Drain-to-Source Voltage Continuous Drain Current (T^=25 'C) Continuous Drain Current (1^=100 'C , Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (t= 2 5 "c) Linear Derating Factor , ±30 314 2.8 4 2.0 40 0.32 -5 5 to +150 Units V A A V mJ A mJ V/ns W PD W/'C c 300 , ,lD =250nA l0=250^A Vgs=30V V gs=-30V V ds=800V V ds=640V,Tc=1 25'C V gs=10V,Id=0.85A V ds=50V ... OCR Scan
datasheet

6 pages,
186.69 Kb

SSS4N80AS SSS4N80AS abstract
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