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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

diode t25 4 L0

Catalog Datasheet MFG & Type PDF Document Tags

DIODE T25 4 H5

Abstract: diode t25 4 L0 1200 SK 70 DH 12 1700 16C0 SK 70 DH 16 Symbol Conditions Values Units 'o T^-80 -C 63 A 'f SM 9 T^-25 "C; 10 ms 370 A T^ - 125 *C;10ms 280 A Pt T^-25 -C; 8.3 . 10 ms 686 A*$ T^- 125 -C; 8,3.10 ms 366 A*» VT T^-25 -C; 76A max 1,9 V VT(TO) V126 "ft 1 V t T^-126 -C 10 mil 'o:- 'rd V126'c:voo-WvR:>-vRay max. 10 mA V T^ - 25 -C; l0 - 1 A; di^'dt - 1 Afps 1 H5 V Vd-0.67VO3w 2 H5 (dv.'dtjç, T , T^-25 -C; d.c. min. 2 V â'¢or T^-25 -C; d.c. min. 100 mA voo T^ - 125 -C; d.c max. 0,26 V 'OD T
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DIODE T25 4 d0

Abstract: diode t25 4 L0 ,6 a Forward Transconductance g fs Id=2,5A Vds=25V 2,0 4,0 S Input Capacitance C 155 VDS=25V Vgs , L=100mH TC^-C 5,0 A Diode Forward On-Voltage V SD 1f=2XIdr VGS=0V Tch=25°C 0,95 1,45 V Reverse , ): 80ps pulse test Tc-25'C 40 £0 Drain-Source On-State Resistance Rum = *Ta); l0=2.5A Vos'lOV T . S 100 1S0 Typical Transfer Characteristics Id=1VgsI; act» pulse te&t; Vos=25V, T^=25*C 1 , r Typical Transconductance g*=f(l0); 80|js pulse test; Vos=25V; S2, 1 ê «D [Al Id [A] â'"Â
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diode t25 4 L0

Abstract: 2SK551 Driver (Dimensions in mm) (JEDEC TO-22QAB) ABSOLUTE MAXIMUM RATINGS (T.=25 °C) Item Symbol Rating , Current ÏOfmbe* 40 A Body-Drain Diode Reverse Drain Current lo. 10 A Channel Dissipation p,r 50 W , \ ELECTRICAL CHARACTERISTICS (T.=25 °C) SO 100 Cue Tonptruure 7c it) Item Symbol Test Condition min. typ , /i - 70 - ns Fall Time tf â'" 45 - ns Body-Drain Diode Forward Voltage Vo, I/=10A, VCJ=0 - 1.2 - V Body-Drain Diode /r=10A, VCJ=0 200 ns Reverse Recovery Time di,/dt=50A/ms â'¢Pulse Test
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BUK655-500A

Abstract: dlp afe 1000 N AMER PHILIPS/DISCRETE 2SE J> bbS3131 a020t.'i5 7 PowerMOS transistor Fast Recovery Diode , reversé diode, particularly suitable for motor control applications, eg. in full bridge configurations , on-state 1.3 1.5 1.7 a . resistance tâ'ž Diode reverse recovery time 250 250 250 ns Dimensions in mm Net Mass: 2g Pinning: 1 = Gate 2 = Drain 3 = Source 4,5 max 1.3 0,9 max (3x) 2,54 2,54 5,9. min 15,8 max 0,6 2,4 3- Fig. 1 T0220AB; drain connected to mounting base. Notes 1
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BUK655-500A BUK655-500B BUK655-500C dlp afe 1000 S3131 T-37-/3 BUK655
Abstract: T25 IRF9540N Peak Diode Recovery dv/dt Test Circuit D.U.T* Circuit Layout Considerations â , 0 . 1 1 7 Q l0 = - 1 9 A Description Fifth Generation HEXFETs from International Rectifier , Diode Recovery dv/dt G > Operating Junction and Storage Temperature Range Soldering Temperature, for , -10V, Id = -11A ® 0.117 a â'" -4.0 v -2.0 Vds = Vgs. Id = -250pA Vqs = -50V, l0 = -11A 5.3 , - 20V nA -100 -VG = -20V S l0 =-11A 97 -S 15 nC VD = -80V -51 Vqs = -10V, See Fig -
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F1010 IRF1010 2BR9246

DIODE T25 4 ko

Abstract: diode t25 4 L0 '¢ Low On-Resistance Ros (on) S 0 Q45 Si. Vc 10 V, lD â'" 10 A 4 V, l0- 10 A ftDS (on) £ 0.065 Q, Vr,s â'¢ Capable of 4 V Gate Drive â'¢ Low Drive Current â'¢ High Speed Switching â'¢ High Density , Impulse»' 40 A Cody Drain Diode I IMI 10 A Reverse Drain Current Channel Dissipation Pch(Tc = 25t}" 28 W Channel Dissipation Pel." 4 w Channel Temperature Tch 150 "c Storage Temperature Tstg â ,  95 - IIS Turn-off Delay Time tdu>ffi Ri =3iJ - 300 - ns Fall Time tf - ]70 - lis Ko
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4AK17 2SK972 2SK1095 SP-10 DIODE T25 4 ko diode t25 4 L0

BUK100-50GS

Abstract: T0220AB ^£25 "C; VIS = 10 V - 60 A Po Total power dissipation T^.^25 -C - 40 W T$lg Storage temperature - -55 , clamping energy VIS = 0V T^S2S -C; Idm=15A; VDD < 20 V; inductive load Tmt> , protection circuits are functional. 4 The device is able to sefl-protect against a short circuit load , voltage Ve = 0 V; l0= 10 mA 50 - - V v(cl)dss loss 'oss Idss Drain-source clamping voltage Zero input , MOSFET 1.0 11 2.5 13 4 5.0 mA V kii 1 The short circuit load protection is able to save the device
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BUK100-50GS 00303M7 00303S4 WIIS25
Abstract: vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage ^ , Drain Qarreit [A] V æ , haracteristic Drain-to-Source Voltage Continuous Drain Current (T^=25 'C) Continuous Drain Current (1^=100 'C , Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (t= 2 5 "c) Linear Derating Factor , ±30 314 2.8 4 2.0 40 0.32 -5 5 to +150 Units V A A V mJ A mJ V/ns W PD W/'C c 300 , =0V,lD =250nA l0=250^A Vgs=30V V gs=-30V V ds=800V V ds=640V,Tc=1 25'C V gs=10V,Id=0.85A V ds=50V,Io -
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SSS4N80AS

diode t25 4 L0

Abstract: BUK655-500 10 100 1000 VDS/V Fig.4. Safe operating area. T^ = 25 'C l0 & Iqm = f(Vos); Iqm single pulse , \ \ / \ / \ ( \ 4 e IO/A 10 Fig.9. Typical transconductance, T-25 'C. 9fs = f(lo); conditions: Vos = 25 V RDS(ON , N AMER PHILIPS/DISCRETE 2SE » bbS3131 Q020t.'i5 7 PowerMOS transistor Fast Recovery Diode FET , mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reversé diode , resistance tâ'ž Diode reverse recovery time 250 250 250 ns Dimensions in mm Net Mass: 2g Pinning: 1 =
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BUK655-500 1c7s T0220 1E-01 IE-03
Abstract: , Gate-Scuroe \fc»ltage f\*3 Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Vottage , (Max ) @ Vos*400V Low Rqs(on) : 0.162 £2 (Typ.) S S H 2 5 N 4 0 A BV0SS = 400 V R ow , Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation , VG S =0V,VD S =25V,f =1MHz See Fig 5 VD D =200V. Id=25A, Re*5.3Û See Fig 13 VO S =320V, VG S =10V, l0=25A See Fig C & Fig 12 ® © ® © Source-Drain Diode Ratings and Characteristics Symbol Is Ism VS d % Qr -
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SSH25N40A SSH25BH0A
Abstract: (Max.) @ VD S = 800V Low R0S(0n> : 3.400 ft (Typ.) SSS4N80A BVdss = 800 V ^DS(on) = 4 .0 Î2 , Characteristic Drain-to-Source Voltage Continuous Drain Current (T^=25 c) Continuous Drain Current (Tc=100 c , Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (1^=25 'C) Linear Derating Factor , for 5-seconds © © 0 @ O Value 800 2.5 1.6 16 Ì 30 250 2.5 4 2.0 40 0.32 -5 5 to +150 Units V A A , VG S =0V,VD S =25V,f =1MHz pF See Fig 5 Voo=400V, l0=2A, ns Rg=16 i i See Fig 13 V ds=640V,Vgs -
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STH7NA80FI

Abstract: STH7NA80 T25 °c V0S = 15V OS(on) (0) 0 12 3 4 lp(a) Gate , uos _ DIODE 4- FAST G M-! X â² DIODE ; L=100^H âº8 1-»8 98 o 0 kl o.u.r. asn i 3.3 1000 , TRANSISTOR TYPE Vdss RoS(on) Id STH7NA80 STH7NA80FI 800 V 800 V < 1.9 n < 1.9 n 6.5 A 4 A . TYPICAL RDS(op , 20 kft) 800 V Vgs Gate-source Voltage ± 30 V Id Drain Current (continuous) at T0 = 25 °C 6.5 4 A Id Drain Current (continuous) at Tc = 100 °C 4 2.5 A Idm(») Drain Current (pulsed) 26 26 A
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ISOWATT218 STH7NA80/FI SC05970 EDD11

ISO 8015

Abstract: KF 520 JJL4 2.7 > Maximum Ratings and Characteristics 'L=0,277mH, Vcc=12V > Equivalent Circuit Item Symbol , Avalanche Capability 1 AV L = 100pH Tch=25°C 50 A Diode Forward On-Voltage V SD If=2xIdr Vgs=0V Tch , ; Tc-25'C Typical Forward Transconductance vs. ID !K=f(b); «Ops pulse test Voe=25V; T^=25*C nf Gate Threshold Voltage vs. Ta, VowrUT»); lo=1mA: Vos=Vrj r+f I 1 1 ; 4- rr+ . till trri- â  ""T! tf-l fifr â iiji 1 rn m»cT . 4{M -1 H- â â flft rt m
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2SK2688-01 US50A ISO 8015 KF 520

DIODE T25 4 Jo

Abstract: cd photo diode No. 1 2 3 4 5 6 7 8 Function TE cooler, negative T herm istor lead 1 T herm istor lead 2 Laser diode , SONY SLD322XT Package O utline Unit : mm High Pow er Density 0.5 W Laser Diode D escription The SLD 322X T is a high power, gain-guided laser diode produced by M O C VD m e th o d "1 . C om pared lo the SLD 300 Series, Ihis laser diode has a high brightness output with a doubted optical density which can be achieved by Q W -S C H stru ctu re "'. Tem perature of laser diode is controlled by
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DIODE T25 4 Jo cd photo diode
Abstract: speed 8MHz Latched data outputs CMOS compatible inputs Forward and reverse shifting options Diode to VP , package. 4. For operation above 25°C ambient, derate linearly to 70°C at 12mW/°C. 1. -0.5V to +16V , Current Leakage, any input l,L Current Leakage, any input HV Output Clamp Diode Voltage HV Output when , GND V dd = V dd max, fCLK = 8 MHz l0 = 100|iA l0 = 100|iA V|N = VD D V,N = 0 l0L = -100mA l0H = -20mA , ground. 2. Apply VDD. 3. Set all inputs (Data, CLK, Enable, etc.) to a known state. 4. Apply VPP -
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HV5308DJ HV5408DJ HV5308PJ HV5408PJ HV5308PG HV5408PG
Abstract: Forward and reverse shifting options â¡ Diode to VP allows efficient power recovery P These , total power dissipated in the package. 4. For operation above 25°C ambient, derate linearly to 70 , Register Output Voltage 1 l|H l|L V l0 = 100|jA V l0 = 100|oA Current Leakage, any , o HV Output Clamp Diode Voltage X I o o o > > > HV Output when Sourcing < o r â , . Apply VDD. 3. Set all inputs (Data, CLK, Enable, etc.) to a known state. 4. Apply VPP. Power-down -
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MIL-STD-883 HV5308X RBHV5308DJ HV5408X RBHV5408DJ HV53/HV54

6045h

Abstract: / APT5545HN MIN 600 Volts 550 16.5 Amps 15.5 0.40 Ohms 0.45 250 1000 ±100 2 4 nA TYP MAX UNIT b v , .]@25°C RG-1 .8 ß SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol *S Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current © (Body Diode) APT6040HN / APT5540HN , 334 5 668 10 Volts ns nc Amps UNIT *SM VSD »rr Q rr Diode Forward Voltage © (VQS = 0V, ls » -lD , 1 CC LU Q_ 16 ' g s 6V - c o T25 VDg, DRAIN-TO-SOURCE VOLTAGE (VOLTS) HGURE 3
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6045h APT6045HN APT5545HN550V15 5540HN 6040HN 554SHN 6045HN

diode t25 4 d7

Abstract: diode clamps to Vcc and ground. )6365 7 " ~ D j . ¿à?/- * / · Can perform as: Boolean , High-Drive-Current outputs: ( I o l = 2 4 mA ® V o l =0.5V) for direct bus interface · Inputs and outputs interface directly with TTL, NMOS and CMOS devices · Wide Qperating voltage range: 4.SV to 5.5V · Characterized for operation over industrial and military temperature ranges: . KS74HCTLS: - 4 0 ° C to + 85°C KS54HCTLS: - 5 5 , D5 D6 D7 W H DO D1 D2 D3 D4 D5 06 D7 PIN CONFIGURATION 03 C D2C 1 2 3 4 5 6 7 ; 16 15 14 13 12 11
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diode t25 4 d7 S4/74LS 90-XO

9010J

Abstract: CE-300 - 1 6 mA VOL VOL ·oh 0.1 (S0.4) V o d VI, V lp«16m A. Vc c * 4.5 V I0 »1.1 m A l0 = 2.4m A , ission rate and a high isolation resistance. They have a G a A IA s infrared emitting diode, optically co , not allow ed to ex cee d the maximum perm issible reference voltages. 016 (41 ).^ , \rn- 100(2 &4 , n mA Peak Forward , % tSlOO ms Delay Time (If =16 m A , Vc c =5 V, TA=25°C) High - Low SFH6135 (Rl =4. 1 kO) SFH6136 (Rl =
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SFH613 9010J CE-300 CE700 H6136 SFH6135/6136
Abstract: Diode Current DC Output Diode Current DC Output Source Sink Current Per Output Pin l0 K lo Icc , M54HC155 M74HC155 SGS-THOMSON m DUAL 2 TO 4 LINE DECODER 3 TO 8 LINE DECODER HIGHSPEED tpD = 12 ns (TYP.) AT Vcc = 5 V LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT TA = 25 °C HIGH NOISE , IMPEDANCE | Ioh | = Iol = 4 mA (MIN.) BALANCED PROPAGATION DELAYS tP L H = tP H L WIDE OPERATING , dual 1-TO-4 line demultiplexers with indi­ vidual strobe inputs (1G and 2G), individual data in -
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54/74LS155 M54HC155F1 M74HC155M1 M74HC155B1R M74HC155C1R M54/74HC155
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