NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SK 70 DH 12 1700 16C0 SK 70 DH 16 Symbol Conditions Values Units 'o T^-80 -C 63 A 'f SM 9 T^-25 "C; 10 ms 370 A T^ - 125 *C;10ms 280 A Pt T^-25 -C; 8.3 . 10 ms 686 A*$ T^- 125 -C; 8,3.10 ms 366 A*» VT T^-25 -C; 76A max 1,9 V VT(TO) V126 "ft 1 V t T^-126 -C 10 mil 'o:- 'rd V126'c:voo-WvR:>-vRay max. 10 mA V T^ - 25 -C; l0 - 1 A; di^'dt - 1 Afps 1 H5 V Vd-0.67VO3w 2 H5 (dv.'dtjç, T^ , T^-25 -C; d.c. min. 2 V •or T^-25 -C; d.c. min. 100 mA voo T^ - 125 -C; d.c max. 0,26 V 'OD T^ - 125 ... | OCR Scan |
3 pages, |
V126 THYRISTOR tv 930 SEMITOP weight DIODE T25 DIODE T25 4 DIODE T25 4 C diode t25 4 L0 T25 4 h5 datasheet abstract |
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| Abstract: ) (JEDEC TO-22QAB) ABSOLUTE MAXIMUM RATINGS (T.=25 °C) Item Symbol Rating Unit Drain-Source Voltage Vm , Body-Drain Diode Reverse Drain Current lo. 10 A Channel Dissipation p,r 50 W Channel Temperature T,t 150 °C , DERATING \ k \ k \ ELECTRICAL CHARACTERISTICS (T.=25 °C) SO 100 Cue , Rl=6il - 40 - ns Turn-off Delay Time W/i - 70 - ns Fall Time tf - 45 - ns Body-Drain Diode Forward Voltage Vo, I/=10A, VCJ=0 - 1.2 - V Body-Drain Diode /r=10A, VCJ=0 200 ns Reverse Recovery Time di ... | OCR Scan |
4 pages, |
2SK551 2SK551 abstract |
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| Abstract: On-Resistance Ros (on) S 0 Q45 Si. Vc 10 V, lD - 10 A 4 V, l0- 10 A ftDS (on) £ 0.065 Q, Vr,s • Capable of 4 , Gate-Source Voltage V , 4 w Channel Temperature Tch 150 "c Storage Temperature Tstg - 55-1-150 V PIN OUTS 2.4. 6, 8 , tf - ]70 - lis Ko , 0 " 25 50 75 100 t25 15Ü /Vmlurm Tfiniieraiur» 7"o (C ) MAXIMUM CHANNEL DISSiPATION CURVE 4AK17 4AK17 ... | OCR Scan |
3 pages, |
SP-10 n channel j fet 4AK17 2SK972 2SK1095 4AK17 abstract |
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| Abstract: Transconductance g fs Id=2,5A Vds=25V 2,0 4,0 S Input Capacitance C 155 VDS=25V Vgs=0V f=1MHz 750 1150 pf , Diode Forward On-Voltage V SD 1f=2XIdr VGS=0V Tch=25°C 0,95 1,45 V Reverse Recovery Time trr IF=IDR , Tc-25'C 40 £0 Drain-Source On-State Resistance Rum = *Ta); l0=2.5A Vos'lOV T . S 100 1S0 Typical Transfer Characteristics Id=1VgsI; act» pulse te&t; Vos=25V, T^=25*C 1 , r Typical Transconductance g*=f(l0); 80|js pulse test; Vos=25V; S2, 1 ê «D [Al Id [A] -» ft >3 ... | OCR Scan |
2 pages, |
2SK2526-01 2SK2526-01 abstract |
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| Abstract: Fig.4. Safe operating area. T^ = 25 'C l0 & Iqm = f(Vos); Iqm single pulse; parameter tf Normalised , \ \ / \ / \ ( \ 4 e IO/A 10 Fig.9. Typical transconductance, T-25 'C. 9fs = f(lo); conditions: Vos = 25 V RDS(ON , N AMER PHILIPS/DISCRETE 2SE » bbS3131 Q020t.'i5 7 PowerMOS transistor Fast Recovery Diode FET , field-effect power transistor in a plastic envelope. FREDFET with fast recovery reversé diode, particularly , power dissipation 100 100 100 W RDS(ON) Drain-source on-state 1.3 1.5 1.7 a . resistance t„ Diode ... | OCR Scan |
5 pages, |
T0220AB BUK655-500C BUK655-500B BUK655-500A BUK655-500 BUK655-500A abstract |
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| Abstract: N AMER PHILIPS/DISCRETE 2SE J> bbS3131 a020t.'i5 7 PowerMOS transistor Fast Recovery Diode FET , mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reversé diode , . resistance t„ Diode reverse recovery time 250 250 250 ns Dimensions in mm Net Mass: 2g Pinning: 1 = Gate 2 = Drain 3 = Source 4,5 max 1.3 0,9 max (3x) 2,54 2,54 5,9. min 15,8 max 0,6 2,4 3- Fig. 1 T0220AB T0220AB; drain connected to mounting base. Notes 1. Observe the general handling ... | OCR Scan |
5 pages, |
T0220AB BUK655-500C BUK655-500B BUK655-500A T-37-/3 BUK655-500A abstract |
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| Abstract: 0020427 4 â- PowerMOS transistor BUK446-1000A BUK446-1000A BUK446-1000B BUK446-1000B REVERSE DIODE RATINGS AND CHARACTERISTICS Th9 = , Typical reverse diode current. IF = f(VSDS); conditions: Vgs= 0 V; parameter 7} 12 10 a 6 4 2 0 VGS/V , current (DC) 1.7 1.5 A P.ot Total power dissipation 30 30 W RqS(ON) Drain-source on-state resistance 4 5 n , Drain-source on-state resistance Vos = o V; lD = 0.25 mA VDS = VGS; l0 = 1 mA VDS = 1000 V; Ves = 0 V; T: = 25 , Turn-on rise time Turn-off delay time Turn-off fall time VDD = 30 V; l0 = 2.3 A; VQS = 10 ViRQ^SOQ; Rg8n = ... | OCR Scan |
5 pages, |
BUK446-1000B BUK446 BUK446-1000A Q02042S T-37- Q02042S abstract |
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| Abstract: T25 °c V0S = 15V OS(on) (0) 0 12 3 4 lp(a) Gate , 4- FAST G M-! X â-² DIODE ; L=100^H â-º8 1-»8 98 o 0 kl o.u.r. asn i 3.3 1000 G7 SCS-THOMSON , TRANSISTOR TYPE Vdss RoS(on) Id STH7NA80 STH7NA80 STH7NA80FI STH7NA80FI 800 V 800 V < 1.9 n < 1.9 n 6.5 A 4 A . TYPICAL RDS(op , Gate-source Voltage ± 30 V Id Drain Current (continuous) at T0 = 25 °C 6.5 4 A Id Drain Current (continuous) at Tc = 100 °C 4 2.5 A Idm(») Drain Current (pulsed) 26 26 A P.O. Total Dissipation at Tc = 25 °C ... | OCR Scan |
7 pages, |
STH7NA80FI STH7NA80 STH7NA80 abstract |
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| Abstract: - Pulsed Igm ±1.5 Ade Single Pulsed Avalanche Energy (4) Eas 28 mJ Avalanche Current Ias 9.7 A , Cycle , IRFS530/531 IRFS530/531 N-CHANNEL POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic Min Typ Max Units Test Conditions Is Continuous Source Current (Body Diode) - - 14 A Modified MOSFET symbol showing the integral reverse P-N junction rectifier M ism Pulse Source Current (Body Diode) (3) - ... | OCR Scan |
5 pages, |
IRFS530 IRFS530/531 IRFS530/531 abstract |
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| Abstract: NEC ELECTRONICS INC 3QE D â- b 4 5 7 S E S 005*1771 7 â- PHOTO INTERRUPTERS PS4001 PS4001 ,PS4003IRS4005 PS4003IRS4005 , are photo coupled interrupter modules containing a GaAs light emitting diode and an NPN silicon darlington connected photo-transistor. CONNECTION DIAGRAM (Top View) 1. Anode 2. Cathode 3. Emitter 4. Collector ABSOLUTE MAXIMUM RATINGS (Ta =»25 °C) Diode Reverse Voltage Vr 5.0 V Forward Current If 50 mA , Top« -20 to +80 °C ELECTRICAL CHARACTERISTICS (T»«25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT ... | OCR Scan |
5 pages, |
PS4010 PS4009 PS4007 PS4003 ps4005 "Photo Interrupter" PS4001 PS4001 PS4011 ANA 618 PS4003IRS4005 PS4005 PS4001 abstract |
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| .150 F 3.8 4.0 0.15 0.157 L 0.4 1.27 0.016 0.050 M 0.6 0.024 S 8 5 (max) ITA6V5C1 / ITA10C1 ITA10C1 ITA10C1 ITA10C1 / ITA18 ITA18 ITA18 ITA18 /output versus pulse duration (typical values). C (pF) 1E+00 1E+01 1E+02 1E+02 1E+03 T = 25 C f = 1 MHz j ACCORDANCE WITH : - ESD standard : . IEC 801-2 15kV 5ns / 50ns . IEC 801-4 40A 5ns / 50ns . IEC 801 = 150 W 5 s duration - Human body test : V P = 4kV C = 150pF R = 150 W FEATURES HIGH order to provide a high surge capability and a low clamping voltage EQUIVALENT TO 4 BIDIRECTIONAL www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5864.htm |
STMicroelectronics | 20/10/2000 | 9.8 Kb | HTM | 5864.htm |
| .8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.15 0.157 L 0.4 1.27 0.016 0.050 M 0.6 0.024 S ). C (pF) 1E+00 1E+01 1E+02 1E+02 1E+03 T = 25 C f = 1 MHz j o V (V) R ITA18C1 ITA18C1 ITA18C1 ITA18C1 ITA25C1 ITA25C1 ITA25C1 ITA25C1 ITA10C1 ITA10C1 ITA10C1 ITA10C1 ITA6V5C1 : - ESD standard : . IEC 801-2 15kV 5ns / 50ns . IEC 801-4 40A 5ns / 50ns . IEC 801-5 1kV 1.2 / 50 m s body test : V P = 4kV C = 150pF R = 150 W FEATURES HIGH SURGE CAPABILITY TRANSIL ARRAY I PP = 40 A EQUIVALENT TO 4 BIDIRECTIONAL TRANSILS 5 GND 6 7 8 GND April 1998 - Ed: 3 I/04 4 I/03 3 I/02 2 I/01 1 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5864-v1.htm |
STMicroelectronics | 02/04/1999 | 7.5 Kb | HTM | 5864-v1.htm |
| .244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.15 0.157 L 0.4 1.27 0.016 0.050 M 0.6 0.024 S 8 5 /output versus pulse duration (typical values). C (pF) 1E+00 1E+01 1E+02 1E+02 1E+03 T = 25 C f = 1 801-4 40A 5ns / 50ns . IEC 801-5 1kV 1.2 / 50 m s 25A 8 / 20 m s . MIL STD 883C P = 4kV C = 150pF R = 150 W FEATURES HIGH SURGE CAPABILITY TRANSIL ARRAY I PP provide a high surge capability and a low clamping voltage EQUIVALENT TO 4 BIDIRECTIONAL TRANSILS www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5864-v3.htm |
STMicroelectronics | 25/05/2000 | 9.33 Kb | HTM | 5864-v3.htm |
| .8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.15 0.157 L 0.4 1.27 0.016 0.050 M 0.6 0.024 S ). C (pF) 1E+00 1E+01 1E+02 1E+02 1E+03 T = 25 C f = 1 MHz j o V (V) R ITA18C1 ITA18C1 ITA18C1 ITA18C1 ITA25C1 ITA25C1 ITA25C1 ITA25C1 ITA10C1 ITA10C1 ITA10C1 ITA10C1 ITA6V5C1 : - ESD standard : . IEC 801-2 15kV 5ns / 50ns . IEC 801-4 40A 5ns / 50ns . IEC 801-5 1kV 1.2 / 50 m s body test : V P = 4kV C = 150pF R = 150 W FEATURES HIGH SURGE CAPABILITY TRANSIL ARRAY I PP = 40 A EQUIVALENT TO 4 BIDIRECTIONAL TRANSILS 5 GND 6 7 8 GND April 1998 - Ed: 3 I/04 4 I/03 3 I/02 2 I/01 1 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5864-v2.htm |
STMicroelectronics | 14/06/1999 | 7.46 Kb | HTM | 5864-v2.htm |
| CHARACTERISTICS I L = 20 to 100mA; R4 =( 51 W // diode) + 33 W ; T = 25 5 C; f = 1kHz; Unless Otherwise Specified .157 L 0.5 1.27 0.020 0.050 M 0.68 0.027 S 8 5 (max.) L3281 L3281 L3281 L3281 9/10 Information furnished is believed to be L = 80mA 1.65 3.4 6.0 8 3.7 6.5 9.5 V V V V CMRR Common Mode Rej. Ratio 50 dB G tx Sending Gain V mi = 10mV; I L = 20mA 30 31.5 33 dB DG tx Delta Sending Gain V mi = 10mV; I L = 70mA - 7.2 -5.7 -4.2 d .2 - 7.7 dB DG rx Delta Receiving Gain I L = 70mA; V ri = 0.2V - 7.2 - 5.7 - 4.2 dB THD rx Receiving www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1036.htm |
STMicroelectronics | 02/04/1999 | 8.54 Kb | HTM | 1036.htm |
| CHARACTERISTICS I L = 20 to 100mA; R4 =( 51 W // diode) + 33 W ; T = 25 5 C; f = 1kHz; Unless Otherwise Specified .157 L 0.5 1.27 0.020 0.050 M 0.68 0.027 S 8 5 (max.) L3281 L3281 L3281 L3281 9/10 Information furnished is believed to be L = 80mA 1.65 3.4 6.0 8 3.7 6.5 9.5 V V V V CMRR Common Mode Rej. Ratio 50 dB G tx Sending Gain V mi = 10mV; I L = 20mA 30 31.5 33 dB DG tx Delta Sending Gain V mi = 10mV; I L = 70mA - 7.2 -5.7 -4.2 d .2 - 7.7 dB DG rx Delta Receiving Gain I L = 70mA; V ri = 0.2V - 7.2 - 5.7 - 4.2 dB THD rx Receiving www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1036-v1.htm |
STMicroelectronics | 14/06/1999 | 8.5 Kb | HTM | 1036-v1.htm |
| 4.8 5.0 0.189 0.197 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.150 0.157 L 0.4 1 SUPPLY VOLTAGE (V) INPUT CURRENT (nA) 100 75 50 25 amb T = +25 C 0 10 20 .177 e 0.65 0.025 k 0 o 8 o 0 o 8 o l 0.50 0.60 0.75 0.09 0.0236 0.030 Information furnished is believed , +70 o C w w w Example : LM258N LM258N LM258N LM258N D SO8 (Plastic Micropackage) LM158 LM158 LM158 LM158,A-LM258,A LM358 LM358 LM358 LM358,A June 1998 1 2 3 4 5 6 7 8 - + - + 1 - Output 1 2 - Inverting input 1 3 - Non-inverting input 1 4 - V CC - 5 - Non www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2163-v2.htm |
STMicroelectronics | 14/06/1999 | 14.59 Kb | HTM | 2163-v2.htm |
| .150 F 3.8 4.0 0.150 0.157 L 0.4 1.27 0.016 0.050 M 0.6 0.024 S 8 o (max.) SO8.TBL LM158 LM158 LM158 LM158,A - LM258 LM258 LM258 LM258 6.40 0.252 E1 4.30 4.40 4.50 0.169 0.173 0.177 e 0.65 0.025 k 0 o 8 o 0 o 8 o l 0.50 0 amb T = +25 C 0 10 20 30 POSITIVE SUPPLY VOLTAGE (V June 1998 1 2 3 4 5 6 7 8 - + - + 1 - Output 1 2 - Inverting input 1 3 - Non-inverting input 1 4 - V CC - 5 - Non-inverting input 2 6 - Inverting input 2 7 - Ouput 2 8 - V CC + PIN www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2163.htm |
STMicroelectronics | 20/10/2000 | 18.28 Kb | HTM | 2163.htm |
| .189 0.197 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.150 0.157 L 0.4 1.27 0 .40 4.50 0.169 0.173 0.177 e 0.65 0.025 k 0 o 8 o 0 o 8 o l 0.50 0.60 0.75 0.09 0 T = +25 C 0 10 20 30 POSITIVE SUPPLY VOLTAGE (V 1 2 3 4 5 6 7 8 - + - + 1 - Output 1 2 - Inverting input 1 3 - Non-inverting input 1 4 - V CC - 5 - Non-inverting input 2 6 - Inverting input 2 7 - Ouput 2 8 - V CC www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2163-v3.htm |
STMicroelectronics | 21/07/2000 | 16.66 Kb | HTM | 2163-v3.htm |
| .189 0.197 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.150 0.157 L 0.4 1.27 0.016 0 (nA) 100 75 50 25 amb T = +25 C 0 10 20 30 POSITIVE SUPPLY o 8 o 0 o 8 o l 0.50 0.60 0.75 0.09 0.0236 0.030 Information furnished is believed to be accurate : LM258N LM258N LM258N LM258N D SO8 (Plastic Micropackage) LM158 LM158 LM158 LM158,A-LM258,A LM358 LM358 LM358 LM358,A June 1998 1 2 3 4 5 6 7 8 - + - + 1 - Output 1 2 - Inverting input 1 3 - Non-inverting input 1 4 - V CC - 5 - Non-inverting input 2 6 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2163-v1.htm |
STMicroelectronics | 02/04/1999 | 14.68 Kb | HTM | 2163-v1.htm |