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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

diode smd ED 84

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diode smd ED 84

Abstract: SMD 437 diode . The SMD DO-213AA MELF comes in both commercial (LL4153) and military equivalent versions (1N4153UR-1HR, HRX, HRV and HRS family). R | JJ^U jI n c o T r p o r^ a t e^d nduCt0rS L aw el^M A U SA 0 , 84 , Silicon Switching Diode 1N4153 DO-35 Glass Package Applications Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important , -34/35 MELF SMD available 0 145 25.4 mm 3.7 mm (Min.) Full approval to Mil-S-19500/437 Available up to
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diode smd ED 84 SMD 437 diode DSAIH00025343 LL-34/35 4031-B

SMD LEDs

Abstract: VL370-5050 VL370-5050 TECHNICAL DATA High Power UV LED, SMD 5x5 mm Ceramic Features â'¢ â'¢ â'¢ â'¢ Zener diode is built in the protective circuit against static electricity Low Voltage DC Operated High , 84 Cycles 20 OK 5 Temperature Cycle JESD22-A104-A -35°C â'¦ +75°C 168 Cycles , Internal Ref. 2sec ON, 2sec OFF 100000 cycle 20 OK 10 ESD Test JEITA ED-4701 300 304 , Condition In automatic mounting of the SMD LEDs on printed circuit boards, any bending, expanding and
Roithner LaserTechnik
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SMD LEDs smd led 5050 5050 SMD LED DIODE SMD 5050 J-STD-020C

SMD LEDs

Abstract: VL380-5050 VL380-5050 TECHNICAL DATA High Power UV LED, SMD 5x5 mm Ceramic Features â'¢ â'¢ â'¢ â'¢ Zener diode is built in the protective circuit against static electricity Low Voltage DC Operated High , 84 Cycles 20 OK 5 Temperature Cycle JESD22-A104-A -35°C â'¦ +75°C 168 Cycles , Internal Ref. 2sec ON, 2sec OFF 100000 cycle 20 OK 10 ESD Test JEITA ED-4701 300 304 , Condition In automatic mounting of the SMD LEDs on printed circuit boards, any bending, expanding and
Roithner LaserTechnik
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SMD LEDs

Abstract: VL400-5050 VL400-5050 TECHNICAL DATA High Power UV LED, SMD 5x5 mm Ceramic Features â'¢ â'¢ â'¢ â'¢ Zener diode is built in the protective circuit against static electricity Low Voltage DC Operated High , OK 4 Themal Shock JESD22-A106-A -40°C â'¦ +85°C 84 Cycles 20 OK 5 , 100000 cycle 20 OK 10 ESD Test JEITA ED-4701 300 304 R=1.5kâ"¦, C=100pF Test Voltage , mounting of the SMD LEDs on printed circuit boards, any bending, expanding and pulling forces or shock
Roithner LaserTechnik
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VL400

SMD LEDs

Abstract: VL390-5050 VL390-5050 TECHNICAL DATA High Power UV LED, SMD 5x5 mm Ceramic Features â'¢ â'¢ â'¢ â'¢ Zener diode is built in the protective circuit against static electricity Low Voltage DC Operated High , OK 4 Themal Shock JESD22-A106-A -40°C â'¦ +85°C 84 Cycles 20 OK 5 , 100000 cycle 20 OK 10 ESD Test JEITA ED-4701 300 304 R=1.5kâ"¦, C=100pF Test Voltage , mounting of the SMD LEDs on printed circuit boards, any bending, expanding and pulling forces or shock
Roithner LaserTechnik
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JESD22-A-104-A

diode smd ED 68

Abstract: diode smd ED 84 Surface Mount Zener Diodes COMCHIP SMD DIODE SPECIALIST C ZRB5926 - C ZRB5956 Voltage: 11 - , Surface Mount Zener Diodes COMCHIP SMD DIODE SPECIALIST 8 RATING AND CHARACTERISTIC CURVES , dividing the ac voltage drop across the device by the accurrent applied. The specifi ed limits are for IZ , : 510-657-8671 · Fax: 510-657-8921 · www.comchiptech.com Page 1 Surface Mount Zener Diodes COMCHIP SMD DIODE SPECIALIST ELECTRICAL CHARACTERISTICS (TL=30°C unless otherwise noted) (VF=1.5Volts Max @ IF
Comchip Technology
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diode smd ED 68 smd diode ED 46 Diode zener smd 152 1368 smd SMB/DO-214AA DO-214AA MIL-STD-750 VOLTAGE-10 DS020800

diode smd ED 84

Abstract: smd transistor NG cto r has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s specifically d esig n ed , om bin ed with 1 0 0 K R A D S of total d ose h ardness to provide d evices w hich are ideally suited , arden ed M O S F E T s includes N -C h a n n e l and P -C h a n n e l d evices in a variety of voltage , vertical D M O S (V D M O S ) structure. It is specially d esig n ed and pro cessed to be radiation tolerant. T h e M O S F E T is w ell suited for applications ex p o s ed to radiation environ m en ts such
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smd transistor NG FSYC9260D FSYC9260R 1-800-4-HARR
Abstract: SILIICON PLANAR ZENER DIODES 3 CZMA3V9-47V SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = , 2 1 Dual Zener Diodes, Common Anode ABSOLUTE MAXIMUM RATINGS per diode (Ta=25° unless , ceramic alumna * Device mounted on an FR5 printed circuit board ELECTRICAL CHARACTERISTICS per diode , -47V SOT-23 Formed SMD Package 3 Pin Configurat ion For Lead Free Parts, Device Part # will be , diode (Ta=25° C) Working Voltage Differential Device Resistance *VZ (V) at IZ test=5mA CZMA Continental Device India
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C-120 010406E

diode smd ED 84

Abstract: EE 16A transformer Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Peak Diode Recovery dv , mounted on 1 inch square copper board, for comparison with other SMD devices. To Order 1/16/97 , ­­­ ­­­ Typ. ­­­ 0.01 ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ 7.2 1.4 2.3 10 12 20 8.4 , ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max
International Rectifier
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IRLMS5703 EE 16A transformer ze 003 driver DIODE marking S6 89 MOSFET marking smd NU marking 702 sot23 3V REGULATOR SOT-23 smd 1413B

smd diode marking LM

Abstract: IRLMS5703 )* Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Units -1.6 -1.3 , recommended footprint. * When mounted on 1 inch square copper board, for comparison with other SMD devices , ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ 7.2 1.4 2.3 10 12 20 8.4 170 89 44 Max. Units , Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward , symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -1.6A, VGS = 0V TJ = 25
International Rectifier
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smd diode marking LM 702 mosfet smd marking Diode smd s6 95 1413C

smd diode 9k

Abstract: "Green PC" And "Instant On" Requirements Compatible to VRM8.2 - 8.4 Specifications IMPORTANT: For the , ,2005-03-01 NO T R OB EC SO OM L ME ET ND E P ED R FO OD R NE UC W T DE SIG NS PRODUCT HIGHLIGHT , IN GS (Note 1 & 2) NO T R OB EC SO OM L ME ET ND E P ED R FO OD R NE UC W T DE SIG NS TDRV , ELECTRICAL CHARACTERISTICS NO T R OB EC SO OM L ME ET ND E P ED R FO OD R NE UC W T DE SIG NS Symbol , resistor, output current and output ripple. NO T R OB EC SO OM L ME ET ND E P ED R FO OD R NE UC W T DE
Microsemi
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smd diode 9k LX1668 IRL3102

TXS2-12V

Abstract: TXS2-24V FEATURES 7.4 .291 8.2 .323 15 .591 8.4 .331 SA type mm inch Outstanding surge , nominal voltage) Release time (without diode) [Reset time]*3 (at 20°C)(at nominal voltage) Temperature , -1.5V TXS2-L2-3V TXS2-L2-4.5V TXS2-L2-6V TXS2-L2-9V TXS2-L2-12V TXS2-L2-24V Notes: 1. Speci ed v alue of , : L, SS type: S Notes: 1. Speci ed v alue of pick-up, drop-out, set and reset voltage is with the , .124 8.4 .331 15 .591 SL type 1 5.08 .039 .200 7.4 .291 8.2 .323 0.5 .020 3
Panasonic
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TXS2-12V TXS2-24V TXS2-H-12V TXS2-H-24V TXS2-L-12V TXS2-L-24V
Abstract: series SMD Features â  Very low capacitance values 0.6 up to 10 pF Single chip Bidirectional , ¡40/+85 °â'¬ â¡40/+125 °â'¬ EPCOS CeraDiodes High-speed series SMD Electrical , 5.6 Array, 4-fold, 0508, no sem iconductor diode equivalent CDA4C16GTH B72714D0160H060 16 22 Array, 4-fold, 0612, no sem iconductor diode equivalent CDA5C16GTH B72724D0160H062 16 Single, 0201, no sem iconductor diode equivalent CDS1C05GTH1 CDS1C05GTH2 CDS1C05GTH B72440C0050H160 -
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Abstract: Product - RoHS Compliant LUW C9EP CERAMOSTM Released Besondere Merkmale â'¢ Gehäusetyp: SMD Keramik Gehäuse mit diffusem Silikonverguss â'¢ Typischer Lichtstrom: 84 lm bei 500 mA â , 61000-4-2, level 4 (contact discharge) Features â'¢ package: SMD ceramic package with diffused silicone resin â'¢ typical Luminous Flux: 84 lm at 500 mA â'¢ feature of the device: high efficient , (0.016) Anode 1.55 (0.061) Protection Diode 0.75 (0.030) 0.55 (0.022) 0.85 (0.033) 0.65 OSRAM
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4000/R JESD22-A114-D D-93055
Abstract: SMD Features â  ESD protection to IEC 61000-4-2, level 4 Single chip Bidirectional ESD , docum ent. Page 2 o f 22 EPCOS CeraDiodes Standard series SMD Electrical specifications and , Ctyp (1 MHz, 1 V) PF Array, 4-fold, 0508, no sem iconductor diode equivalent CDA4C 20G TA B , 1000 82 Array, 4-fold, 0612, no sem iconductor diode equivalent CDA5C 20G TA | B72724D0200A062| 22 125 Single, 0201, no sem iconductor diode equivalent CDS1C05GTA1 CDS1C05G TA -
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Abstract: diode wit h DC rat ed current equal t o t he input current t o allow an adequat e m argin for safe use , wafer- level chip scale package ( WLCSP) and is rat ed over t he - 40°C t o + 85°C t em per at ure , induct or bet ween LX and input supply ( VI N) ; Schot tky rect ifi er anode is connect ed bet ween LX pin while cat hode is connect ed t o out put capacit or. Supply input for t he I C. Connect a 4.7Π, m ainly relat ed t o t he out put capacit or valued. See t he Capacit or Select ion sect ion in t Advanced Analogic Technologies
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AAT1403

st smd diode marking code BUH

Abstract: diode smd marking BUF °C °C Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit , recommended pad layout Parameter Value 20 100 Unit °C/W °C/W August 2001- Ed: 3 1/6 SMBJxxxA-TR , 13.7 290 5.9 14.5 276 6.1 19.5 205 7.3 21.7 184 7.8 25.3 157 8.3 27.2 147 8.4 32.5 123 8.8 39.3 102 9.2 42.8 93 9.4 48.3 83 9.6 50 80 9.6 53.5 75 9.7 59 68 9.8 64.3 62 9.9 69.7 57 10.0 84 48 10.1 100 40 10.3 , (Millimeter) SMD Plastic. 2.3 1.52 2.75 1.52 Packaging : standard packaging is in tape and reel
STMicroelectronics
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st smd diode marking code BUH diode smd marking BUF diode smd marking Bva diode smd marking BBE diode smd marking BUj diode smd marking BUE SMBJ188A-TR

st smd diode marking code BUH

Abstract: diode smd marking BUF °C 260 °C Value Unit Note 1 : For a surge greater than the maximum values, the diode , 100 °C/W October 2001- Ed: 4 1/6 SMBJxxxA-TR, CA-TR ELECTRICAL CHARACTERISTICS (Tamb = , 21.7 184 7.8 25.3 157 8.3 27.2 147 8.4 32.5 123 8.8 32.5 123 8.8 39.3 102 9.2 42.8 93 9.4 48.3 83 9.6 50 80 9.6 53.5 75 9.7 59 68 9.8 64.3 62 9.9 69.7 57 10.0 84 48 10.1 100 , 1.60 0.030 0.045 0.063 E c A1 A2 L b FOOTPRINT DIMENSIONS (Millimeter) SMD Plastic
STMicroelectronics
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smd diode order marking code stmicroelectronics STMicroelectronics smd marking code marking bbz STMicroelectronics smd DIODE marking code st smd diode marking code BUZ diode SMBJ170A-TR

diode smd marking BUF

Abstract: marking CODE R SMD DIODE SMB J 36 CA greater than the maximum values, the diode will fail in short-circuit. THERMAL RESISTANCES Symbol , circuit on recommended pad layout 100 °C/W January 1998 Ed: 3 1/6 SMBJxxxA-TR, CA-TR , 8.4 16.7 1 24.4 25.1 32.5 123 8.8 20 1 29.2 21.5 39.3 102 9.2 22.2 1 32.4 19.4 42.8 93 9.4 , 13.8 59 68 9.8 33.3 1 48.4 13 64.3 62 9.9 36.7 1 53.3 11.8 69.7 57 10.0 44.4 1 64.5 9.7 84 48 , FOOTPRINT DIMENSIONS (Millimeter) SMD Plastic. 2.3 1.52 2.75 1.52 Packaging : standard
STMicroelectronics
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marking CODE R SMD DIODE SMB J 36 CA diode smd marking "BUF" smd diode code buh SMD CODE BUQ SMBJ SMBJ10CA-TR
Abstract: Data Besondere Merkmale · Gehäusetyp: weißes SMD Gehäuse, farbiger diffuser Silikon - Verguss · , : ESD-sicher bis 2 kV nach JESD22-A114-B Features · package: white SMD package, colored diffused silicone resin , (0.004) A Heat sink Protection Diode R1.5 (0.059) Cathode 1.9 (0.075) C 1.7 (0.067) 1.0 (0.039) 0.8 , (0.012) 12.4 (0.488) 24 (0.945) 7.35 (0.289) 0.3 (0.012) Protection Diode 1.9 (0.075) Heat , 180 (7) W 8 (0.315) Nmin 60 (2.362) W1 8.4 ± 2 (0.331 ± 0.079) W2 max 14.4 (0.567) 2004-02-26 13 OSRAM
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800/R D-93049
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