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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

diode cmc F 4

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ® ( - 5 5 w ith CMC & TVS diode) (0863 w ith new LED f o o t p r i n t ) 0 8 6 4 -2 X 6 R -9 5 -F , ith CMC & TVS diode) (0863 w ith new LED f o o t p r i n t ) 0 8 6 4 -2 X 6 R -9 5 -F PART NO , , 2X6 M a g J a c k ® ( - 5 5 w ith CMC & TVS diode) (0863 w ith new LED f o o t p r i n t ) 0 8 6 , na^aniinB^pn ns,=â ini PART NO. / DRAWING NO. 2X6 M agJack® ( - 5 5 w ith CMC & TVS diode) (0863 w ith new LED f o o t p r i n t ) 0 8 6 4 -2 X 6 R -9 5 -F h i a FILE #E196366 AND E169987 -
OCR Scan
2002/9S/E 100MH DC002 20Q2/95/EC

diode 8a 600v

Abstract: CMPFCD86 CMPFCD86 PFC Diode (8A/600V) IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves , CMPFCD86 PFC Diode (8A/600V) FEATURES Fast switching for high efficiency Low noise Trr = 20ns , CMPFCD86 PFC Diode (8A/600V) TYPICAL CHARACTERISTICS 2009/04/30 Rev1.0 Champion Microelectronic Corporation Page 2 CMPFCD86 PFC Diode (8A/600V) Application Circuit PACKAGE DIMENSION TO , CMPFCD86 PFC Diode (8A/600V) TO-220FP Dimensions in inches and (millimeters) SMC Dimensions in
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diode 8a 600v 3 phase pfc diode cmc F 4 UL94V-0 MIL-STD-202

diode 8a 600v

Abstract: CMPFCD86 Diode (8A/600V) TYPICAL CHARACTERISTICS 2010/10/28 Rev1.3 Champion Microelectronic Corporation Page 3 CMPFCD86 PFC Diode (8A/600V) PACKAGE DIMENSION TO-220AC Dimensions in inches and (millimeters) 2010/10/28 Rev1.3 Champion Microelectronic Corporation Page 4 CMPFCD86 PFC Diode , CMPFCD86 PFC Diode (8A/600V) FEATURES Fast switching for high efficiency Low noise Trr = 20ns , . 2010/10/28 Rev1.3 Champion Microelectronic Corporation Page 1 CMPFCD86 PFC Diode (8A/600V
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CMPFCD86XN220

diode 8a 600v

Abstract: CMPFCD86XN220 Corporation Page 4 CMPFCD86 PFC Diode (8A/600V) TO-220FP Dimensions in inches and (millimeters , CMPFCD86 PFC Diode (8A/600V) FEATURES Fast switching for high efficiency Low noise Trr = 20ns , CMPFCD86 PFC Diode (8A/600V) ORDERING INFORMATION Part Number Temperature Range Package , Microelectronic Corporation Page 2 CMPFCD86 PFC Diode (8A/600V) TYPICAL CHARACTERISTICS 2009/12/02 Rev1.1 Champion Microelectronic Corporation Page 3 CMPFCD86 PFC Diode (8A/600V) PACKAGE
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CMPFCD86GN220

Abstract: Microelectronic Corporation Page 4 CMPFCD86 PFC Diode (8A/600V) TO-220FP Dimensions in inches and , CMPFCD86 PFC Diode (8A/600V) FEATURES Fast switching for high efficiency Low noise Trr = 20ns , CMPFCD86 PFC Diode (8A/600V) ORDERING INFORMATION Part Number Temperature Range Package , .2 Champion Microelectronic Corporation Page 2 CMPFCD86 PFC Diode (8A/600V) TYPICAL CHARACTERISTICS 2010/05/21 Rev1.2 Champion Microelectronic Corporation Page 3 CMPFCD86 PFC Diode (8A/600V
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CMPFCD86GN220
Abstract: Microelectronic Corporation Page 4 CMPFCD86 PFC Diode (8A/600V) IMPORTANT NOTICE Champion , CMPFCD86 PFC Diode (8A/600V) FEATURES Fast switching for high efficiency Low noise Trr = 20ns , . 2011/09/13 Rev1.6 Champion Microelectronic Corporation Page 1 CMPFCD86 PFC Diode (8A/600V , Diode (8A/600V) TYPICAL CHARACTERISTICS 2011/09/13 Rev1.6 Champion Microelectronic Corporation Page 3 CMPFCD86 PFC Diode (8A/600V) PACKAGE DIMENSION TO-220AC Dimensions in inches and Champion Microelectronic
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Abstract: TITLE 2X4 M ag Jack® ( - 5 5 with CMC & T V S diode) (0 8 6 3 with new LED f o o t p r i n t , 2X4 M a g Ja ck ® ( - 5 5 with CMC & T V S diode) (0 8 6 3 with new LED f o o t p r i n t , OHMS GREEEN â¡RANGE GREEEN â¡RANGE 2X4 McxgJack® ( - 5 5 with CMC & T V S diode) (0 8 6 3 , , lOOOpF 2 k V SH IELD PART NO. / DRAWING NO. 08642X4R95-F FILE NAME 0 8 6 4 2 X 4 R 9 5 - F A.DWG , T V S diode) (0 8 6 3 with new LED f o o t p r i n t ) 0864-2X4R-95-F 0,550 [13,97] T Y P IC A -
OCR Scan
2002/95/EC 0864-2X4R-95-F 08642X4R95-F

CMT01N60

Abstract: CMT01N60N251 addition, this ! Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy ! Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a ! IDSS and VDS(on) Specified at Elevated Temperature fast recovery time , controls, these devices are particularly well suited for bridge circuits where diode speed and
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CMT01N60 CMT01N60N251 CMT01N60N252

TF1227

Abstract: CMT06N10N252 . The new ! Source-to-Drain Diode Recovery Time Comparable to a energy efficient design also offers a drain-to-source diode Discrete Fast Recovery Diode with a fast recovery time. Designed for high voltage, high ! Diode is Characterized for Use in Bridge Circuits speed switching , PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed , Fall Time Total Gate Charge A 10 100 gFS (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 50 V
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CMT06N10N252 TF1227 CMT06N10

CMT12N10N220

Abstract: withstand high energy in ! Source-to-Drain Diode Recovery Time Comparable to a avalanche and commutation modes. The new energy Discrete Fast Recovery Diode efficient design also offers a drain-to-source diode with a ! Diode is Characterized for Use in Bridge Circuits fast recovery time , well suited for bridge circuits where diode speed and commutating safe operating areas are critical , Charge gFS (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 50 V, ID = 12 A, VGS = 10 V, RG = 12
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CMT12N10N220 CMT12N10

CMT01N60

Abstract: MOSFET , this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a IDSS and VDS(on) Specified at Elevated Temperature fast recovery time. Designed for , , these devices are particularly well suited for bridge circuits where diode speed
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MOSFET

CMT10N40

Abstract: CMT10N40N220 Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a IDSS and , well suited for bridge circuits where diode speed and commutating safe operating areas are critical , ) * Input Capacitance (VDS = 25 V, VGS = 0 V, Output Capacitance f = 1.0 MHz) Reverse Transfer
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CMT10N40 CMT10N40N220

CMT07N20N220

Abstract: . The new ! Source-to-Drain Diode Recovery Time Comparable to a energy efficient design also offers a drain-to-source diode Discrete Fast Recovery Diode with a fast recovery time. Designed for high voltage, high ! Diode is Characterized for Use in Bridge Circuits speed switching , PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed , Forward Transconductance (VDS = 14 V, ID = 3.5A) * Input Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0
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CMT07N20N220 CMT07N20
Abstract: , this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a IDSS and VDS(on) Specified at Elevated Temperature fast recovery time. Designed for , , these devices are particularly well suited for bridge circuits where diode speed and commutating safe Champion Microelectronic
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CMT08N50

CM6805

Abstract: ´=0.5 per Diode 7 24 16 14 12 T 5 o Rth(j-a) = 4.5 C/W o Rth(j-a) = 15 C/W 4 , ) Figure 3. Average Forward Power Dissipation per Diode Figure 4. Current derating Curves 180 150 , Microelectronic Corporation Page 4 CMPFCD86 PFC Diode (8A/600V) IMPORTANT NOTICE Champion , CMPFCD86 PFC Diode (8A/600V) FEATURES Fast switching for high efficiency Low noise Trr ~ 25ns Ultra low reverse leakage current High voltage ultra faster diode PFC application High inrush current
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CM6805 CMPFCD86XN220FP CMPFCD86GN220FP CMPFCD86XN252 CMT14N60 CM65XX CM68XX

CMT14N50

Abstract: CMT14N50N3P addition, this ! Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy ! Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a ! IDSS and VDS(on) Specified at Elevated Temperature fast recovery time , controls, these devices are particularly well suited for bridge circuits where diode speed and
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CMT14N50 CMT14N50N3P

S 170 MOSFET TRANSISTOR

Abstract: transistor w 431 PDF Datasheets addition, this ! Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy ! Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a ! IDSS and VDS(on) Specified at Elevated Temperature fast recovery time , for bridge circuits where diode speed and commutating safe operating areas are critical and offer
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CMT20N50 S 170 MOSFET TRANSISTOR transistor w 431 PDF Datasheets CMT20N50N3P td 6950

CMT45N10N3P

Abstract: . The new ! Source-to-Drain Diode Recovery Time Comparable to a energy efficient design also offers a drain-to-source diode Discrete Fast Recovery Diode with a fast recovery time. Designed for , motor controls, these devices are particularly well ! Diode is Characterized for Use in Bridge , circuits where diode speed and commutating safe operating areas are critical and offer additional and , Time Turn-Off Delay Time Fall Time Total Gate Charge (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD
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CMT45N10N3P CMT45N10
Abstract: , this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a IDSS and VDS(on) Specified at Elevated Temperature fast recovery time. Designed for , , these devices are particularly well suited for bridge circuits where diode speed and commutating safe Champion Microelectronic
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CMT08N50

Abstract: CMT08N50N220 addition, this ! Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy ! Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a ! IDSS and VDS(on) Specified at Elevated Temperature fast recovery time , controls, these devices are particularly well suited for bridge circuits where diode speed and
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CMT08N50N220 CMT08N50N220FP
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