NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

Direct from the Manufacturer

Part Manufacturer Description PDF Samples Ordering
SME2470-011 Honeywell Sensing and Control SME2470 Series Infrared Emitting Diode, Surface-mount Package, Glass Lens ri Buy
SME2470-001 Honeywell Sensing and Control SME2470 Series Infrared Emitting Diode, Surface-mount Package, Glass Lens ri Buy
SME2470-021 Honeywell Sensing and Control SME2470 Series Infrared Emitting Diode, Surface-mount Package, Glass Lens ri Buy

diode SM 78A

Catalog Datasheet Results Type PDF Document Tags
Abstract: SM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source , integral reverse ннн ннн 520 S p-n junction diode. ннн ннн 1.3 V TJ = 25-'C, IS = 78A, VGS = 0V ннн , Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode , Conditions ннн V VGS = 0V, ID = 250╡A ннн V/-'C Reference to 25-'C, ID = 1mA 0.0065 VGS = 10V, ID = 78A 0.009 VGS = 4.5V, ID = 65A ннн V VDS = VGS, ID = 250╡A ннн S VDS = 25V, ID = 78A 25 VDS = 40V ... Original
datasheet

3 pages,
109.04 Kb

SM 78A diode SM 78A datasheet abstract
datasheet frame
Abstract: -52 -p-n junction diode. V -1.3 Tj = 25°C, ls = -7.8A, Vqs = 0V © - 130 190 ns Tj = 25°C, If , Peak Diode Recovery dv/dt ® dv/dt Operating Junction and Tj Storage Temperature Range T stg | Soldering , = -250pA - -0.11 - v/°c Reference to 25°C, Id = -1 mA Ü 0.20 -Vqs = -10V, lD = -7.8A ® -4.0 v -2.0 Vos = Vgs. I d = -250pA 3.2 S Vos = -50V, lD = -7.8A -25 VDS = -100V -100V, Vgs = 0V pA -250 -Vos = -80V, V g s = 0V, T j = 150°C 100 -VGS = 20V nA -100 -VGS = -20V 58 -l0 = -7.8A ... OCR Scan
datasheet

8 pages,
251.51 Kb

datasheet abstract
datasheet frame
Abstract: FDMA510PZ FDMA510PZ tm Single P-Channel PowerTrench® MOSFET ­20V, ­7.8A, 30m Features General Description Max rDS(on) = 30m at VGS = ­4.5V, ID = ­7.8A Max rDS(on) = 37m at VGS = ­2.5V, ID = , A, referenced to 25°C 3 mV/°C VGS = ­4.5V, ID = ­7.8A Forward Transconductance 37 VGS = ­1.8V, ID = ­5.5A 46 50 60 90 VGS = ­4.5V, ID = ­7.8A ,TJ = 125°C gFS Static , ­6.6A 36 40 VDD = ­5V, ID = ­7.8A 26 30 m S Dynamic Characteristics Ciss Input ... Original
datasheet

7 pages,
303.38 Kb

FDMA510PZ diode SM 78A FDMA510PZ abstract
datasheet frame
Abstract: ннн ннн 520 S p-n junction diode. ннн ннн 1.3 V TJ = 25-'C, IS = 78A, VGS = 0V ннн 78 120 ns , Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt , Reference to 25-'C, ID = 1mA ннн 0.0065 VGS = 10V, ID = 78A ннн 0.009 VGS = 4.5V, ID = 65A ннн ннн V VDS = VGS, ID = 250╡A ннн ннн S VDS = 25V, ID = 78A ннн 25 VDS = 40V, VGS = 0V ╡A ннн 250 VDS = 32V, VGS = 0V, TJ = 150-'C ннн 100 VGS = 16V nA ннн -100 VGS = -16V ннн 100 ID = 78A ннн ... Original
datasheet

9 pages,
97.02 Kb

IRL1004 91702B 91702B abstract
datasheet frame
Abstract: ннн ннн 520 S p-n junction diode. ннн ннн 1.3 V TJ = 25-'C, IS = 78A, VGS = 0V ннн 78 120 ns , Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt , Reference to 25-'C, ID = 1mA ннн 0.0065 VGS = 10V, ID = 78A ннн 0.009 VGS = 4.5V, ID = 65A ннн ннн V VDS = VGS, ID = 250╡A ннн ннн S VDS = 25V, ID = 78A ннн 25 VDS = 40V, VGS = 0V ╡A ннн 250 VDS = 32V, VGS = 0V, TJ = 150-'C ннн 100 VGS = 16V nA ннн -100 VGS = -16V ннн 100 ID = 78A ннн ... Original
datasheet

8 pages,
92.92 Kb

IRL1004 91702B 91702B abstract
datasheet frame
Abstract: SM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source , integral reverse ннн ннн 520 S p-n junction diode. ннн ннн 1.3 V TJ = 25-'C, IS = 78A, VGS = 0V ннн , Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode , Conditions ннн V VGS = 0V, ID = 250╡A ннн V/-'C Reference to 25-'C, ID = 1mA 0.0065 VGS = 10V, ID = 78A 0.009 VGS = 4.5V, ID = 65A ннн V VDS = VGS, ID = 250╡A ннн S VDS = 25V, ID = 78A 25 VDS = 40V ... Original
datasheet

9 pages,
156.19 Kb

datasheet abstract
datasheet frame
Abstract: SM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source , integral reverse ннн ннн 520 S p-n junction diode. ннн ннн 1.3 V TJ = 25-'C, IS = 78A, VGS = 0V ннн , Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode , Conditions ннн V VGS = 0V, ID = 250╡A ннн V/-'C Reference to 25-'C, ID = 1mA 0.0065 VGS = 10V, ID = 78A 0.009 VGS = 4.5V, ID = 65A ннн V VDS = VGS, ID = 250╡A ннн S VDS = 25V, ID = 78A 25 VDS = 40V ... Original
datasheet

8 pages,
152.11 Kb

datasheet abstract
datasheet frame
Abstract: A Integral reverse pn-diode in the MOSFET 'SM Pulsed-Source Current ® - - 31 VSD Diode Forward Voltage © - - 1.4 V Tj=25°C, ls=7.8A, VGS=0V trr Reverse Recovery Time - 380 - ns Tj=25°C, lF=12A , Repetitive Avalanche Energy ® 10 mJ dv/dt Peak Diode Recovery dv/dt ® 4.5 V/ns Pd Total Power Dissipation , Junction-to-Ambient - 40 BVdss = 600V rds(on) = lD = 7.8A TO-3PF ISMMRCSMEIJE» © 1999 Fairchild Semiconductor , Gate-Source Charge - 8.6 - Qgd Gate-Drain (Miller) Charge - 21 - SOURCE-DRAIN DIODE RATINGS AND ... OCR Scan
datasheet

7 pages,
353.44 Kb

FQAF12N60 0-55Q FQAF12N60 abstract
datasheet frame
Abstract: transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature , energy pulse circuits. Product Summary Part Number bvdss RDS(on) Id IRFPE50 IRFPE50 800V Ì.2Q 7.8A IRFPE52 IRFPE52 , = VGS, Iq = 260 ^A gj$ Forward Transconductance © ALL 6.1 9.1 - SM vDS > 100V, iDS = 4ba 'DSS , Diode Ratings and Characteristics Parameter Type Min. Tyn Max. Units Test Conditions Ig Continuous Source Current (Body Diode) ALL - - 7.8 A Modified MOSFET symbol showing the integral Reverse p-n ... OCR Scan
datasheet

8 pages,
491.85 Kb

IRFPE52 MOSFET 800V 10A dioda rectifier IRFPE50 IRFPE60 datasheet abstract
datasheet frame
Abstract: drain current I DM IS I SM PD PD T j :T stg A A A W mW/°C W mW/°C °C Continuous source current (body diode) Pulsed source current (body diode) (c) Power dissipation at T A =25°C Linear derating , GS = 20V, V DS =0V I =250 A, V DS = V GS D V GS =10V, I D =7.8A V GS =4.5V, I D =6.8A V DS =10V,I D =7.8A Input capacitance Output capacitance Reverse transfer capacitance SWITCHING (2) (3) C iss C , SOURCE-DRAIN DIODE Diode forward voltage (1) Reverse recovery time (3) Reverse recovery charge (3) t d(on ... Original
datasheet

7 pages,
172.18 Kb

ZXMN3A03E6 ZXMN3A03E6 abstract
datasheet frame

Datasheet Content (non pdf)

Abstract Saved from Date Saved File Size Type Download
Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
No abstract text available
www.datasheetarchive.com/download/10138655-777581ZC/tdliblist.zip (TDlibList.xls)
Spice Models 29/07/2012 425.7 Kb ZIP tdliblist.zip
No abstract text available
www.datasheetarchive.com/download/55755264-777576ZC/profliblist.zip (ProflibList.xls)
Spice Models 29/07/2012 414.13 Kb ZIP profliblist.zip
No abstract text available
www.datasheetarchive.com/download/93153643-777569ZC/icap4pwrliblist.zip (ICAP4PwrlibList.xls)
Spice Models 29/07/2012 401.5 Kb ZIP icap4pwrliblist.zip
No abstract text available
www.datasheetarchive.com/download/64018625-777570ZC/icap4rfliblist.zip (ICAP4RFlibList.xls)
Spice Models 29/07/2012 401.75 Kb ZIP icap4rfliblist.zip
No abstract text available
www.datasheetarchive.com/download/79967802-777574ZC/icap4winliblist.zip (ICAP4WinlibList.xls)
Spice Models 29/07/2012 388.92 Kb ZIP icap4winliblist.zip
No abstract text available
www.datasheetarchive.com/download/64007008-139818ZD/00104f.zip (00104f.pdf)
Microchip 01/06/2002 87251.33 Kb ZIP 00104f.zip
No abstract text available
www.datasheetarchive.com/download/26555896-2732ZC/fulltext.dic
Allied Electronics 31/07/2001 4264.14 Kb DIC fulltext.dic