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1N5222B_T50A Fairchild Semiconductor Corporation Zener Diode ri Buy
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diode SM 78A

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Abstract: SM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source , integral reverse ­­­ ­­­ 520 S p-n junction diode. ­­­ ­­­ 1.3 V TJ = 25°C, IS = 78A, VGS = 0V ­­­ , Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt , Conditions ­­­ V VGS = 0V, ID = 250uA ­­­ V/°C Reference to 25°C, ID = 1mA 0.0065 VGS = 10V, ID = 78A 0.009 VGS = 4.5V, ID = 65A ­­­ V VDS = VGS, ID = 250uA ­­­ S VDS = 25V, ID = 78A 25 VDS = 40V ... International Rectifier
Original
datasheet

3 pages,
109.04 Kb

SM 78A diode SM 78A TEXT
datasheet frame
Abstract: SM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source , integral reverse ­­­ ­­­ 520 S p-n junction diode. ­­­ ­­­ 1.3 V TJ = 25°C, IS = 78A, VGS = 0V ­­­ , Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt , Conditions ­­­ V VGS = 0V, ID = 250uA ­­­ V/°C Reference to 25°C, ID = 1mA 0.0065 VGS = 10V, ID = 78A 0.009 VGS = 4.5V, ID = 65A ­­­ V VDS = VGS, ID = 250uA ­­­ S VDS = 25V, ID = 78A 25 VDS = 40V ... International Rectifier
Original
datasheet

9 pages,
156.19 Kb

TEXT
datasheet frame
Abstract: SM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source , integral reverse ­­­ ­­­ 520 S p-n junction diode. ­­­ ­­­ 1.3 V TJ = 25°C, IS = 78A, VGS = 0V ­­­ , Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt , Conditions ­­­ V VGS = 0V, ID = 250uA ­­­ V/°C Reference to 25°C, ID = 1mA 0.0065 VGS = 10V, ID = 78A 0.009 VGS = 4.5V, ID = 65A ­­­ V VDS = VGS, ID = 250uA ­­­ S VDS = 25V, ID = 78A 25 VDS = 40V ... International Rectifier
Original
datasheet

8 pages,
152.11 Kb

TEXT
datasheet frame
Abstract: €“ 520 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 78A, VGS = 0V „ ––â , Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery , 1mA 0.0065 VGS = 10V, ID = 78A „ Ω 0.009 VGS = 4.5V, ID = 65A „ ––– V VDS = VGS, ID = 250ÂuA ––– S VDS = 25V, ID = 78A 25 VDS = 40V, VGS = 0V ÂuA 250 VDS = 32V, VGS = 0V, TJ = 150°C 100 VGS = 16V nA -100 VGS = -16V 100 ID = 78A 32 nC VDS = 32V 43 VGS = 4.5V ... International Rectifier
Original
datasheet

9 pages,
164.46 Kb

TEXT
datasheet frame
Abstract: -p-n junction diode. V -1.3 Tj = 25°C, ls = -7.8A, Vqs = 0V © - 130 190 ns Tj = 25°C, If = -7.8A , Peak Diode Recovery dv/dt ® dv/dt Operating Junction and Tj Storage Temperature Range T stg | Soldering , = -250pA - -0.11 - v/°c Reference to 25°C, Id = -1 mA Ü 0.20 -Vqs = -10V, lD = -7.8A ® -4.0 v -2.0 Vos = Vgs. I d = -250pA 3.2 S Vos = -50V, lD = -7.8A -25 VDS = -100V -100V, Vgs = 0V pA -250 -Vos = -80V, V g s = 0V, T j = 150°C 100 -VGS = 20V nA -100 -VGS = -20V 58 -l0 = -7.8A ... OCR Scan
datasheet

8 pages,
251.51 Kb

diode SM 78A TEXT
datasheet frame
Abstract: in the MOSFET 'SM Pulsed-Source Current ® - - 31 VSD Diode Forward Voltage © - - 1.4 V Tj=25°C, ls=7.8A, VGS=0V trr Reverse Recovery Time - 380 - ns Tj=25°C, lF=12A, Vdd=480V diF/dt=100A/(j,s  , Avalanche Current ® 7.8 A Ear Repetitive Avalanche Energy ® 10 mJ dv/dt Peak Diode Recovery dv/dt ® 4.5 , r0jc Junction-to-Case - 1.25 °C/W r0ja Junction-to-Ambient - 40 BVdss = 600V rds(on) = lD = 7.8A , Gate-Drain (Miller) Charge - 21 - SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristics ... OCR Scan
datasheet

7 pages,
353.44 Kb

FQAF12N60 0-55Q TEXT
datasheet frame
Abstract: €¢ Extended Safe Operating Area • Lower RDS(on ): 0-55Q 0-55Q (Typ.) R DS(ON) = lD = 7.8A ABSOLUTE , Repetitive Avalanche Energy ® 10 mJ dv/dt Peak Diode Recovery dv/dt ® 4.5 V/ns , 13 ©© V ds=480V, Vgs=1 0V Id=12A See Fig 6 & Fig 12 © © SOURCE-DRAIN DIODE RATINGS AND , 7.8 Units Test Conditions A Integral reverse pn-diode in the MOSFET 'sm Pulsed-Source Current © - - 31 v sd Diode Forward Voltage © - - 1.4 V TJ ... OCR Scan
datasheet

7 pages,
216.06 Kb

FQAF12N60 TEXT
datasheet frame
Abstract: ­­­ ­­­ 520 S p-n junction diode. ­­­ ­­­ 1.3 V TJ = 25°C, IS = 78A, VGS = 0V ­­­ 78 120 ns , Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt , Reference to 25°C, ID = 1mA ­­­ 0.0065 VGS = 10V, ID = 78A ­­­ 0.009 VGS = 4.5V, ID = 65A ­­­ ­­­ V VDS = VGS, ID = 250uA ­­­ ­­­ S VDS = 25V, ID = 78A ­­­ 25 VDS = 40V, VGS = 0V uA ­­­ 250 VDS = 32V, VGS = 0V, TJ = 150°C ­­­ 100 VGS = 16V nA ­­­ -100 VGS = -16V ­­­ 100 ID = 78A ­­­ ... International Rectifier
Original
datasheet

9 pages,
97.02 Kb

IRL1004 91702B TEXT
datasheet frame
Abstract: FDMA510PZ FDMA510PZ tm Single P-Channel PowerTrench® MOSFET –20V, –7.8A, 30m General Description Features Max rDS(on) = 30m at VGS = –4.5V, ID = –7.8A Max rDS(on) = 37m at VGS = –2.5V, ID , = –250 A, referenced to 25°C –0.7 3 mV/°C VGS = –4.5V, ID = –7.8A 27 30 , €“4.5V, ID = –7.8A ,TJ = 125°C gFS Static Drain to Source On Resistance VGS = –1.8V, ID = –5.5A VGS = –1.5V, ID = –2.0A rDS(on) 36 40 VDD = –5V, ID = –7.8A 26 m S ... Fairchild Semiconductor
Original
datasheet

7 pages,
305.57 Kb

FDMA510PZ TEXT
datasheet frame
Abstract: "Miller" Charge VDD = ­5V, ID = ­7.8A VGS = ­4.5V 2.1 nC 4.2 nC Drain-Source Diode , FDMA510PZ FDMA510PZ tm Single P-Channel PowerTrench® MOSFET ­20V, ­7.8A, 30m Features General Description Max rDS(on) = 30m at VGS = ­4.5V, ID = ­7.8A Max rDS(on) = 37m at VGS = ­2.5V, ID = , , referenced to 25°C 3 mV/°C VGS = ­4.5V, ID = ­7.8A Forward Transconductance 37 VGS = ­1.8V, ID = ­5.5A 46 50 60 90 VGS = ­4.5V, ID = ­7.8A ,TJ = 125°C gFS Static Drain to ... Fairchild Semiconductor
Original
datasheet

7 pages,
303.38 Kb

SM 78A FDMA510PZ diode SM 78A TEXT
datasheet frame

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