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diode SM 78A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source , integral reverse ­­­ ­­­ 520 S p-n junction diode. ­­­ ­­­ 1.3 V TJ = 25°C, IS = 78A, VGS = 0V ­­­ , Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt , Conditions ­­­ V VGS = 0V, ID = 250uA ­­­ V/°C Reference to 25°C, ID = 1mA 0.0065 VGS = 10V, ID = 78A 0.009 VGS = 4.5V, ID = 65A ­­­ V VDS = VGS, ID = 250uA ­­­ S VDS = 25V, ID = 78A 25 VDS = 40V International Rectifier
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SM 78A IRL1004P
Abstract: SM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source , integral reverse ­­­ ­­­ 520 S p-n junction diode. ­­­ ­­­ 1.3 V TJ = 25°C, IS = 78A, VGS = 0V ­­­ , Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt , Conditions ­­­ V VGS = 0V, ID = 250uA ­­­ V/°C Reference to 25°C, ID = 1mA 0.0065 VGS = 10V, ID = 78A 0.009 VGS = 4.5V, ID = 65A ­­­ V VDS = VGS, ID = 250uA ­­­ S VDS = 25V, ID = 78A 25 VDS = 40V International Rectifier
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Abstract: SM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source , integral reverse ­­­ ­­­ 520 S p-n junction diode. ­­­ ­­­ 1.3 V TJ = 25°C, IS = 78A, VGS = 0V ­­­ , Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt , Conditions ­­­ V VGS = 0V, ID = 250uA ­­­ V/°C Reference to 25°C, ID = 1mA 0.0065 VGS = 10V, ID = 78A 0.009 VGS = 4.5V, ID = 65A ­­­ V VDS = VGS, ID = 250uA ­­­ S VDS = 25V, ID = 78A 25 VDS = 40V International Rectifier
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Abstract: '" 520 S p-n junction diode. â'"â'"â'" â'"â'"â'" 1.3 V TJ = 25°C, IS = 78A, VGS = 0V Â" â'"â'"â , Single Pulse Avalanche EnergyÂ' Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery , 1mA 0.0065 VGS = 10V, ID = 78A Â" â"¦ 0.009 VGS = 4.5V, ID = 65A Â" â'"â'"â'" V VDS = VGS, ID = 250ÂuA â'"â'"â'" S VDS = 25V, ID = 78A 25 VDS = 40V, VGS = 0V ÂuA 250 VDS = 32V, VGS = 0V, TJ = 150°C 100 VGS = 16V nA -100 VGS = -16V 100 ID = 78A 32 nC VDS = 32V 43 VGS = 4.5V International Rectifier
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Abstract: -p-n junction diode. V -1.3 Tj = 25°C, ls = -7.8A, Vqs = 0V © - 130 190 ns Tj = 25°C, If = -7.8A , Peak Diode Recovery dv/dt ® dv/dt Operating Junction and Tj Storage Temperature Range T stg | Soldering , = -250pA - -0.11 - v/°c Reference to 25°C, Id = -1 mA Ü 0.20 -Vqs = -10V, lD = -7.8A ® -4.0 v -2.0 Vos = Vgs. I d = -250pA 3.2 S Vos = -50V, lD = -7.8A -25 VDS = -100V, Vgs = 0V pA -250 -Vos = -80V, V g s = 0V, T j = 150°C 100 -VGS = 20V nA -100 -VGS = -20V 58 -l0 = -7.8A -
OCR Scan
IRF9530N T0-220 T0-220AB IRF1010
Abstract: in the MOSFET 'SM Pulsed-Source Current ® - - 31 VSD Diode Forward Voltage © - - 1.4 V Tj=25°C, ls=7.8A, VGS=0V trr Reverse Recovery Time - 380 - ns Tj=25°C, lF=12A, Vdd=480V diF/dt=100A/(j,s  , Avalanche Current ® 7.8 A Ear Repetitive Avalanche Energy ® 10 mJ dv/dt Peak Diode Recovery dv/dt ® 4.5 , r0jc Junction-to-Case - 1.25 °C/W r0ja Junction-to-Ambient - 40 BVdss = 600V rds(on) = lD = 7.8A , Gate-Drain (Miller) Charge - 21 - SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristics -
OCR Scan
FQAF12N60 0-55Q
Abstract: '¢ Extended Safe Operating Area â'¢ Lower RDS(on ): 0-55Q (Typ.) R DS(ON) = lD = 7.8A ABSOLUTE , Repetitive Avalanche Energy ® 10 mJ dv/dt Peak Diode Recovery dv/dt ® 4.5 V/ns , 13 ©© V ds=480V, Vgs=1 0V Id=12A See Fig 6 & Fig 12 © © SOURCE-DRAIN DIODE RATINGS AND , 7.8 Units Test Conditions A Integral reverse pn-diode in the MOSFET 'sm Pulsed-Source Current © - - 31 v sd Diode Forward Voltage © - - 1.4 V TJ -
OCR Scan
Abstract: ­­­ ­­­ 520 S p-n junction diode. ­­­ ­­­ 1.3 V TJ = 25°C, IS = 78A, VGS = 0V ­­­ 78 120 ns , Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt , Reference to 25°C, ID = 1mA ­­­ 0.0065 VGS = 10V, ID = 78A ­­­ 0.009 VGS = 4.5V, ID = 65A ­­­ ­­­ V VDS = VGS, ID = 250uA ­­­ ­­­ S VDS = 25V, ID = 78A ­­­ 25 VDS = 40V, VGS = 0V uA ­­­ 250 VDS = 32V, VGS = 0V, TJ = 150°C ­­­ 100 VGS = 16V nA ­­­ -100 VGS = -16V ­­­ 100 ID = 78A ­­­ International Rectifier
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IRL1004 DSA0031588 91702B
Abstract: FDMA510PZ tm Single P-Channel PowerTrench® MOSFET â'"20V, â'"7.8A, 30m General Description Features Max rDS(on) = 30m at VGS = â'"4.5V, ID = â'"7.8A Max rDS(on) = 37m at VGS = â'"2.5V, ID , = â'"250 A, referenced to 25°C â'"0.7 3 mV/°C VGS = â'"4.5V, ID = â'"7.8A 27 30 , '"4.5V, ID = â'"7.8A ,TJ = 125°C gFS Static Drain to Source On Resistance VGS = â'"1.8V, ID = â'"5.5A VGS = â'"1.5V, ID = â'"2.0A rDS(on) 36 40 VDD = â'"5V, ID = â'"7.8A 26 m S Fairchild Semiconductor
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Abstract: "Miller" Charge VDD = ­5V, ID = ­7.8A VGS = ­4.5V 2.1 nC 4.2 nC Drain-Source Diode , FDMA510PZ tm Single P-Channel PowerTrench® MOSFET ­20V, ­7.8A, 30m Features General Description Max rDS(on) = 30m at VGS = ­4.5V, ID = ­7.8A Max rDS(on) = 37m at VGS = ­2.5V, ID = , , referenced to 25°C 3 mV/°C VGS = ­4.5V, ID = ­7.8A Forward Transconductance 37 VGS = ­1.8V, ID = ­5.5A 46 50 60 90 VGS = ­4.5V, ID = ­7.8A ,TJ = 125°C gFS Static Drain to Fairchild Semiconductor
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Abstract: ­­­ ­­­ 520 S p-n junction diode. ­­­ ­­­ 1.3 V TJ = 25°C, IS = 78A, VGS = 0V ­­­ 78 120 ns , Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt , Reference to 25°C, ID = 1mA ­­­ 0.0065 VGS = 10V, ID = 78A ­­­ 0.009 VGS = 4.5V, ID = 65A ­­­ ­­­ V VDS = VGS, ID = 250uA ­­­ ­­­ S VDS = 25V, ID = 78A ­­­ 25 VDS = 40V, VGS = 0V uA ­­­ 250 VDS = 32V, VGS = 0V, TJ = 150°C ­­­ 100 VGS = 16V nA ­­­ -100 VGS = -16V ­­­ 100 ID = 78A ­­­ International Rectifier
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diode LE 78A
Abstract: FDMA510PZ Single P-Channel PowerTrench® MOSFET â'"20V, â'"7.8A, 30m Features General Description Max rDS(on) = 30m at VGS = â'"4.5V, ID = â'"7.8A Max rDS(on) = 37m at VGS = â , VGS = â'"1.5V, ID = â'"2.0A 60 90 VGS = â'"4.5V, ID = â'"7.8A ,TJ = 125°C gFS VGS = VDS , '"6.6A rDS(on) Gate to Source Threshold Voltage VGS = â'"4.5V, ID = â'"7.8A VGS(th) TJ 36 40 VDD = â'"5V, ID = â'"7.8A 26 Static Drain to Source On Resistance Forward Transconductance Fairchild Semiconductor
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Abstract: '" 31 A Vgo Diode Forward Voltage ® ALL - 1.8 V Tj = 25°C, ls = 7.8A, VGS = OV trr Reverse , transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature , energy pulse circuits. Product Summary Part Number bvdss RDS(on) Id IRFPE50 800V Ì.2Q 7.8A IRFPE52 , ALL 2.0 - 4.0 V VDS = VGS, Iq = 260 ^A gj$ Forward Transconductance © ALL 6.1 9.1 - SM vDS > 100V , rectifier T-39-15 Source-Drain Diode Ratings and Characteristics Parameter Type Min. Tyn Max. Units Test -
OCR Scan
IRFPE60 dioda rectifier MOSFET 800V 10A dioda J2E S/IRFPE52 UJ 7.8A C-598 08TAIN C-599 C-600
Abstract: Current (Body Diode) (c) I SM 17 A Power Dissipation at T A =25°C (a) Linear Derating Factor , ; T A =25°C (a) Pulsed Drain Current (c) ID Continuous Source Current (Body Diode) (b) LIMIT , 0.5 nA V GS =20V, V DS =0V I =250A, V DS = V GS D V GS =10V, I D =7.8A V GS =4.5V, I D =6.8A S 1 V DS =10V,I D =7.8A V Static Drain-Source On-State Resistance R DS(on) (1 , Gate-Drain Charge Q gd 2.0 nC Diode Forward Voltage (1) V SD 0.85 Reverse Recovery Time Zetex Semiconductors
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ZXMN3A03E6 ZXMN3A03E6TA ZXMN3A03E6TC marking QG SOT23-6 D-81673 NY11788
Abstract: A IS 2.6 A I SM 17 A Power dissipation at T A =25°C (a) Linear derating , °C VALUE UNIT Continuous source current (body diode) Pulsed source current (body diode) (c , GS =10V, I D =7.8A V GS =4.5V, I D =6.8A V DS =10V,I D =7.8A 1 R DS(on) 0.050 0.065 g , ,V GS =5V, I D =3.5A V DS =15V,V GS =10V, I D =3.5A SOURCE-DRAIN DIODE Diode forward voltage Zetex Semiconductors
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Abstract: I SM 17 A (a) PD 1.1 8.8 W mW/°C Power dissipation at T A =25°C (b) Linear , -55 to +150 °C VALUE UNIT Continuous source current (body diode) Pulsed source current (body diode) (c) Power dissipation at T A =25°C Linear derating factor (b) THERMAL RESISTANCE , I =250A, V DS = V GS D V GS =10V, I D =7.8A V GS =4.5V, I D =6.8A V DS =10V,I D =7.8A , charge Q gs 2.0 nC Gate-drain charge Q gd 2.0 nC Diode forward voltage (1) V Zetex Semiconductors
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Abstract: A Continuous Source Current (Body Diode) (b) IS 2.6 A Pulsed Source Current (Body Diode) (c) I SM 17 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 1.1 , , V DS = V GS V GS =10V, I D =7.8A V GS =4.5V, I D =6.8A 10 S V DS =10V,I D =7.8A , Charge Q gd 2.0 nC Diode Forward Voltage (1) V SD 0.85 Reverse Recovery Time (3 , , I D =3.5A V DS =15V,V GS =10V, I D =3.5A SOURCE-DRAIN DIODE 0.95 V T J =25°C, I S =3.2A Zetex Semiconductors
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D46A
Abstract: drain current I DM IS I SM PD PD T j :T stg A A A W mW/°C W mW/°C °C Continuous source current (body diode) Pulsed source current (body diode) (c) Power dissipation at T A =25°C Linear derating , GS = 20V, V DS =0V I =250 A, V DS = V GS D V GS =10V, I D =7.8A V GS =4.5V, I D =6.8A V DS =10V,I D =7.8A Input capacitance Output capacitance Reverse transfer capacitance SWITCHING (2) (3) C iss C , SOURCE-DRAIN DIODE Diode forward voltage (1) Reverse recovery time (3) Reverse recovery charge (3) t d(on Zetex Semiconductors
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Abstract: Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering , °C, ID = -1mA 0.10 VGS = -10V, ID = - 7.8A -4.0 V VDS = V GS, ID = -250uA S VDS = 25V, ID = , Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time , -14 showing the A G integral reverse -68 p-n junction diode. S -1.3 V TJ = 25°C, IS = - International Rectifier
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IRF9Z34N IRFI9Z34NP
Abstract: Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering , °C, ID = -1mA 0.10 VGS = -10V, ID = - 7.8A -4.0 V VDS = V GS, ID = -250uA S VDS = 25V, ID = , Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time , -14 showing the A G integral reverse -68 p-n junction diode. S -1.3 V TJ = 25°C, IS = - International Rectifier
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low threshold mosfet p-channel TO-220
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