500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
WM8255SEFL Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR visit Digikey Buy
WM8255SEFL/R Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR visit Digikey Buy
CDB4352 Cirrus Logic Evaluation, Design Tools Eval Bd 192kHz DAC w/LD visit Digikey Buy
QBVE078A0S10R4 GE Critical Power High Power Barracuda, PMBus equipped DC-DC bus converters, 48V (45V-56V), 10.4V, 78A, 0.97 visit GE Critical Power

diode SM 78A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source , integral reverse ­­­ ­­­ 520 S p-n junction diode. ­­­ ­­­ 1.3 V TJ = 25°C, IS = 78A, VGS = 0V ­­­ , Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt , Conditions ­­­ V VGS = 0V, ID = 250uA ­­­ V/°C Reference to 25°C, ID = 1mA 0.0065 VGS = 10V, ID = 78A 0.009 VGS = 4.5V, ID = 65A ­­­ V VDS = VGS, ID = 250uA ­­­ S VDS = 25V, ID = 78A 25 VDS = 40V International Rectifier
Original
SM 78A SM+78A IRL1004P
Abstract: SM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source , integral reverse ­­­ ­­­ 520 S p-n junction diode. ­­­ ­­­ 1.3 V TJ = 25°C, IS = 78A, VGS = 0V ­­­ , Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt , Conditions ­­­ V VGS = 0V, ID = 250uA ­­­ V/°C Reference to 25°C, ID = 1mA 0.0065 VGS = 10V, ID = 78A 0.009 VGS = 4.5V, ID = 65A ­­­ V VDS = VGS, ID = 250uA ­­­ S VDS = 25V, ID = 78A 25 VDS = 40V International Rectifier
Original
Abstract: SM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source , integral reverse ­­­ ­­­ 520 S p-n junction diode. ­­­ ­­­ 1.3 V TJ = 25°C, IS = 78A, VGS = 0V ­­­ , Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt , Conditions ­­­ V VGS = 0V, ID = 250uA ­­­ V/°C Reference to 25°C, ID = 1mA 0.0065 VGS = 10V, ID = 78A 0.009 VGS = 4.5V, ID = 65A ­­­ V VDS = VGS, ID = 250uA ­­­ S VDS = 25V, ID = 78A 25 VDS = 40V International Rectifier
Original
Abstract: '" 520 S p-n junction diode. â'"â'"â'" â'"â'"â'" 1.3 V TJ = 25°C, IS = 78A, VGS = 0V Â" â'"â'"â , Single Pulse Avalanche EnergyÂ' Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery , 1mA 0.0065 VGS = 10V, ID = 78A Â" â"¦ 0.009 VGS = 4.5V, ID = 65A Â" â'"â'"â'" V VDS = VGS, ID = 250ÂuA â'"â'"â'" S VDS = 25V, ID = 78A 25 VDS = 40V, VGS = 0V ÂuA 250 VDS = 32V, VGS = 0V, TJ = 150°C 100 VGS = 16V nA -100 VGS = -16V 100 ID = 78A 32 nC VDS = 32V 43 VGS = 4.5V International Rectifier
Original
Abstract: -p-n junction diode. V -1.3 Tj = 25°C, ls = -7.8A, Vqs = 0V © - 130 190 ns Tj = 25°C, If = -7.8A , Peak Diode Recovery dv/dt ® dv/dt Operating Junction and Tj Storage Temperature Range T stg | Soldering , = -250pA - -0.11 - v/°c Reference to 25°C, Id = -1 mA Ü 0.20 -Vqs = -10V, lD = -7.8A ® -4.0 v -2.0 Vos = Vgs. I d = -250pA 3.2 S Vos = -50V, lD = -7.8A -25 VDS = -100V, Vgs = 0V pA -250 -Vos = -80V, V g s = 0V, T j = 150°C 100 -VGS = 20V nA -100 -VGS = -20V 58 -l0 = -7.8A -
OCR Scan
IRF9530N T0-220 T0-220AB IRF1010
Abstract: in the MOSFET 'SM Pulsed-Source Current ® - - 31 VSD Diode Forward Voltage © - - 1.4 V Tj=25°C, ls=7.8A, VGS=0V trr Reverse Recovery Time - 380 - ns Tj=25°C, lF=12A, Vdd=480V diF/dt=100A/(j,s  , Avalanche Current ® 7.8 A Ear Repetitive Avalanche Energy ® 10 mJ dv/dt Peak Diode Recovery dv/dt ® 4.5 , r0jc Junction-to-Case - 1.25 °C/W r0ja Junction-to-Ambient - 40 BVdss = 600V rds(on) = lD = 7.8A , Gate-Drain (Miller) Charge - 21 - SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristics -
OCR Scan
FQAF12N60 0-55Q
Abstract: '¢ Extended Safe Operating Area â'¢ Lower RDS(on ): 0-55Q (Typ.) R DS(ON) = lD = 7.8A ABSOLUTE , Repetitive Avalanche Energy ® 10 mJ dv/dt Peak Diode Recovery dv/dt ® 4.5 V/ns , 13 ©© V ds=480V, Vgs=1 0V Id=12A See Fig 6 & Fig 12 © © SOURCE-DRAIN DIODE RATINGS AND , 7.8 Units Test Conditions A Integral reverse pn-diode in the MOSFET 'sm Pulsed-Source Current © - - 31 v sd Diode Forward Voltage © - - 1.4 V TJ -
OCR Scan
Abstract: ­­­ ­­­ 520 S p-n junction diode. ­­­ ­­­ 1.3 V TJ = 25°C, IS = 78A, VGS = 0V ­­­ 78 120 ns , Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt , Reference to 25°C, ID = 1mA ­­­ 0.0065 VGS = 10V, ID = 78A ­­­ 0.009 VGS = 4.5V, ID = 65A ­­­ ­­­ V VDS = VGS, ID = 250uA ­­­ ­­­ S VDS = 25V, ID = 78A ­­­ 25 VDS = 40V, VGS = 0V uA ­­­ 250 VDS = 32V, VGS = 0V, TJ = 150°C ­­­ 100 VGS = 16V nA ­­­ -100 VGS = -16V ­­­ 100 ID = 78A ­­­ International Rectifier
Original
IRL1004 DSA0031588 91702B
Abstract: FDMA510PZ tm Single P-Channel PowerTrench® MOSFET â'"20V, â'"7.8A, 30m General Description Features Max rDS(on) = 30m at VGS = â'"4.5V, ID = â'"7.8A Max rDS(on) = 37m at VGS = â'"2.5V, ID , = â'"250 A, referenced to 25°C â'"0.7 3 mV/°C VGS = â'"4.5V, ID = â'"7.8A 27 30 , '"4.5V, ID = â'"7.8A ,TJ = 125°C gFS Static Drain to Source On Resistance VGS = â'"1.8V, ID = â'"5.5A VGS = â'"1.5V, ID = â'"2.0A rDS(on) 36 40 VDD = â'"5V, ID = â'"7.8A 26 m S Fairchild Semiconductor
Original
Abstract: "Miller" Charge VDD = ­5V, ID = ­7.8A VGS = ­4.5V 2.1 nC 4.2 nC Drain-Source Diode , FDMA510PZ tm Single P-Channel PowerTrench® MOSFET ­20V, ­7.8A, 30m Features General Description Max rDS(on) = 30m at VGS = ­4.5V, ID = ­7.8A Max rDS(on) = 37m at VGS = ­2.5V, ID = , , referenced to 25°C 3 mV/°C VGS = ­4.5V, ID = ­7.8A Forward Transconductance 37 VGS = ­1.8V, ID = ­5.5A 46 50 60 90 VGS = ­4.5V, ID = ­7.8A ,TJ = 125°C gFS Static Drain to Fairchild Semiconductor
Original
Abstract: ­­­ ­­­ 520 S p-n junction diode. ­­­ ­­­ 1.3 V TJ = 25°C, IS = 78A, VGS = 0V ­­­ 78 120 ns , Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt , Reference to 25°C, ID = 1mA ­­­ 0.0065 VGS = 10V, ID = 78A ­­­ 0.009 VGS = 4.5V, ID = 65A ­­­ ­­­ V VDS = VGS, ID = 250uA ­­­ ­­­ S VDS = 25V, ID = 78A ­­­ 25 VDS = 40V, VGS = 0V uA ­­­ 250 VDS = 32V, VGS = 0V, TJ = 150°C ­­­ 100 VGS = 16V nA ­­­ -100 VGS = -16V ­­­ 100 ID = 78A ­­­ International Rectifier
Original
diode LE 78A
Abstract: FDMA510PZ Single P-Channel PowerTrench® MOSFET â'"20V, â'"7.8A, 30m Features General Description Max rDS(on) = 30m at VGS = â'"4.5V, ID = â'"7.8A Max rDS(on) = 37m at VGS = â , VGS = â'"1.5V, ID = â'"2.0A 60 90 VGS = â'"4.5V, ID = â'"7.8A ,TJ = 125°C gFS VGS = VDS , '"6.6A rDS(on) Gate to Source Threshold Voltage VGS = â'"4.5V, ID = â'"7.8A VGS(th) TJ 36 40 VDD = â'"5V, ID = â'"7.8A 26 Static Drain to Source On Resistance Forward Transconductance Fairchild Semiconductor
Original
Abstract: '" 31 A Vgo Diode Forward Voltage ® ALL - 1.8 V Tj = 25°C, ls = 7.8A, VGS = OV trr Reverse , transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature , energy pulse circuits. Product Summary Part Number bvdss RDS(on) Id IRFPE50 800V Ì.2Q 7.8A IRFPE52 , ALL 2.0 - 4.0 V VDS = VGS, Iq = 260 ^A gj$ Forward Transconductance © ALL 6.1 9.1 - SM vDS > 100V , rectifier T-39-15 Source-Drain Diode Ratings and Characteristics Parameter Type Min. Tyn Max. Units Test -
OCR Scan
IRFPE60 dioda rectifier MOSFET 800V 10A dioda J2E S/IRFPE52 UJ 7.8A C-598 08TAIN C-599 C-600
Abstract: Current (Body Diode) (c) I SM 17 A Power Dissipation at T A =25°C (a) Linear Derating Factor , ; T A =25°C (a) Pulsed Drain Current (c) ID Continuous Source Current (Body Diode) (b) LIMIT , 0.5 nA V GS =20V, V DS =0V I =250A, V DS = V GS D V GS =10V, I D =7.8A V GS =4.5V, I D =6.8A S 1 V DS =10V,I D =7.8A V Static Drain-Source On-State Resistance R DS(on) (1 , Gate-Drain Charge Q gd 2.0 nC Diode Forward Voltage (1) V SD 0.85 Reverse Recovery Time Zetex Semiconductors
Original
ZXMN3A03E6 ZXMN3A03E6TA ZXMN3A03E6TC marking QG SOT23-6 D-81673 NY11788
Abstract: I SM 17 A (a) PD 1.1 8.8 W mW/°C Power dissipation at T A =25°C (b) Linear , -55 to +150 °C VALUE UNIT Continuous source current (body diode) Pulsed source current (body diode) (c) Power dissipation at T A =25°C Linear derating factor (b) THERMAL RESISTANCE , I =250A, V DS = V GS D V GS =10V, I D =7.8A V GS =4.5V, I D =6.8A V DS =10V,I D =7.8A , charge Q gs 2.0 nC Gate-drain charge Q gd 2.0 nC Diode forward voltage (1) V Zetex Semiconductors
Original
Abstract: A IS 2.6 A I SM 17 A Power dissipation at T A =25°C (a) Linear derating , °C VALUE UNIT Continuous source current (body diode) Pulsed source current (body diode) (c , GS =10V, I D =7.8A V GS =4.5V, I D =6.8A V DS =10V,I D =7.8A 1 R DS(on) 0.050 0.065 g , ,V GS =5V, I D =3.5A V DS =15V,V GS =10V, I D =3.5A SOURCE-DRAIN DIODE Diode forward voltage Zetex Semiconductors
Original
Abstract: A Continuous Source Current (Body Diode) (b) IS 2.6 A Pulsed Source Current (Body Diode) (c) I SM 17 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 1.1 , , V DS = V GS V GS =10V, I D =7.8A V GS =4.5V, I D =6.8A 10 S V DS =10V,I D =7.8A , Charge Q gd 2.0 nC Diode Forward Voltage (1) V SD 0.85 Reverse Recovery Time (3 , , I D =3.5A V DS =15V,V GS =10V, I D =3.5A SOURCE-DRAIN DIODE 0.95 V T J =25°C, I S =3.2A Zetex Semiconductors
Original
D46A
Abstract: drain current I DM IS I SM PD PD T j :T stg A A A W mW/°C W mW/°C °C Continuous source current (body diode) Pulsed source current (body diode) (c) Power dissipation at T A =25°C Linear derating , GS = 20V, V DS =0V I =250 A, V DS = V GS D V GS =10V, I D =7.8A V GS =4.5V, I D =6.8A V DS =10V,I D =7.8A Input capacitance Output capacitance Reverse transfer capacitance SWITCHING (2) (3) C iss C , SOURCE-DRAIN DIODE Diode forward voltage (1) Reverse recovery time (3) Reverse recovery charge (3) t d(on Zetex Semiconductors
Original
Abstract: Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering , °C, ID = -1mA 0.10 VGS = -10V, ID = - 7.8A -4.0 V VDS = V GS, ID = -250uA S VDS = 25V, ID = , Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time , -14 showing the A G integral reverse -68 p-n junction diode. S -1.3 V TJ = 25°C, IS = - International Rectifier
Original
IRF9Z34N IRFI9Z34NP
Abstract: Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering , °C, ID = -1mA 0.10 VGS = -10V, ID = - 7.8A -4.0 V VDS = V GS, ID = -250uA S VDS = 25V, ID = , Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time , -14 showing the A G integral reverse -68 p-n junction diode. S -1.3 V TJ = 25°C, IS = - International Rectifier
Original
low threshold mosfet p-channel TO-220
Showing first 20 results.