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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

diode PR 93A

Catalog Datasheet MFG & Type PDF Document Tags

diode PR 93A

Abstract: isd 2100 Pr e du o so Ob - s) t( ns SOURCE DRAIN DIODE Symbol Unit Max. 9 Unit , Circuit For Inductive Load Switching And Diode Recovery Times Pr e let o bs O 6/8 ro P , STW9NB80 N-CHANNEL 800V - 0.85 - 9.3A TO-247 PowerMESHTM MOSFET TYPE s s s s RDS(on , le ro P so Ob - du o Pr e TO-247 ABSOLUTE MAXIMUM RATINGS Symbol Unit , Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (·)Pulse
STMicroelectronics
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diode PR 93A isd 2100

SP126

Abstract: broadest product range in SOT-89, SOT-143, and MELF diode packages. â  Our Surface Mount devices, as , FR 93 B FR 93A 102 102 B S R 41 B S R 42 B FR 106 B FS17 B FS17A 102 102 B FS18 , ST122 111 PM B T4401 94 PR LL4001 127 105 PR LL4002 PR LL5817 PR LL5818 127 , 111 111 94 127 PM B T5088 105 PR LL 5819 125 127 127 PM B T5089 PM B T5401 , B Y D 77E B Y D 77F B FG 55 B FG 67 BSP205 BSP206 BSP220 BSP225 B FG 92A B FG 93A
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OCR Scan
SP126 EIA-RS481A IEC286-3 T2222A T2369 T2907 Z5242B

3408 diode

Abstract: DESCRIPTION: The RT-3400 Series is a line of PIN diode based digital fiber-optic receivers. The receiver , silicon (0.8 jim) PIN diode in a transimpedance circuit configuration for maximum sensitivity and dynamic , levels below sensitivity. Rev 3/93a RT-3400 Series RECEIVER PERFORMANCE ® TA = 25 , power required to maintain a B E R - 10exp -9; PR BS - 2exp15-1 pattern N R Z (6) T h e R T -3404 is , , 10Mb/s, 20Mb/s, 50Mb/s,
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3408 diode RT-3404 RT-3408 LSRDS028 RT-3404-001 RT-3404-010 RT-3404-020
Abstract: YG882C02R (20V / 16A TO-22OF15) Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1 3 1.2±0.2 13Min 3.7±0.2 Features 2 15±0.3 6.3 2.7±0.2 +0.2 -0 0.7±0.2 2.54±0.2 Low VF Super high speed switching. High , . 1min. duty=1/2, Tc=93°C Square wave Unit 20 tw=500ns, duty=1/40 Rating V 20 V , o 1.0 0.8 PR 0.6 1.0 0.5 0.2 Per 1element 0.0 0 1 2 3 Io 4 Fuji Electric
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SC-67

diode PR 93A

Abstract: bdw93 noted) RATING BDW93 Collector-base voltage ( lE = 0) BDW 93A BDW93B BDW93C BDW93 Collector-em itter voltage ( lB = 0) BDW 93A BDW93B BDW93C Em itter-base voltage Continuous collector current Continuous base , saturation voltage Base-emitter saturation voltage Parallel diode lc = 10 A lc = SA II II L U O , R PR O D U C TS ARE NOT DESIGNED, INTENDED, A U TH O R IZED , OR W A R R A N TE D TO BE SUITABLE FOR
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BDW93A BDW94 BDW94A BDW94B BDW94C T0-220

rb050l-60

Abstract: RB050L60 Data Sheet Schottky barrier diode RB050L-60 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 2.0 2.6±0.2 Features 1)Small power mold type. (PMDS) 2)Low IR 3)High reliability 0.1±0.02 0.1 5.0±0.3 4 3 4.5±0.2 1.2±0.3 PMDS , 50 40 30 20 10 0 Ta=25 C VR=60V n=50pcs AVE25.93A 640 630 620 610 600 590 580 570 560 550 AVE , FORWARD CURRENT:Io(A) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 REVERSE POWER DISSIPATION:PR (W) t T
ROHM
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RB050L60 R1120A

CBVK741B019

Abstract: F011 superior switching performance. · Q1: N-Channel 9.3A, 30V RDS(on) = 18 m @ V GS = 10V RDS(on) = , 27 10 27 61 64 20 40 27 21 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current V SD Drain-Source Diode Forward V GS = 0 V, IS = 2.1 A (Note 2) Voltage V GS = 0 V, IS = ­2.1 A (Note 2) Q1 Q2 , , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
Fairchild Semiconductor
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FDS4501H CBVK741B019 F011 F63TNR F852 FDS9953A

RB050L-60

Abstract: RB050L60 Schottky barrier diode RB050L-60 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 4.2 0.1±0.02 0.1 5.0±0.3 3 1.2±0.3 4 4.5±0.2 Features 1)Small power mold type. (PMDS) 2)Low IR 2.0 2.6±0.2 PMDS 3)High , R CHARACTERISTICS 90 0.5 0.49 0.48 0.47 AVE:0.4884V 80 70 60 AVE25.93A 50 40 , Io 0V 7 4.5 0.5 REVERSE POWER DISSIPATION:PR (W) Data Sheet t DC T 5 4
ROHM
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diode sod 106 R0039A

3110 0001 mosfet

Abstract: IRF7463 Diode Characteristics IS ISM VSD trr Qrr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse , p-n junction diode. TJ = 25°C, IS = 2.5A, VGS = 0V TJ = 25°C, IF = 2.5A di/dt = 100A/µs D S , Source-Drain Diode Forward Voltage 3 IRF7463 0.0080 ID = 14A R DS (on) , Drain-to-Source On , RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US
International Rectifier
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3110 0001 mosfet IA-48

8761401CX

Abstract: M38510/75201BCX +0.5 V dc Clamp diode current - â'" . â'" . â'" ±20 mA DC output current (per pin) -  , SUPPLY CENTER DAYTON, OHtO 45444 SIZE A 5962-87614 REVISION LEVB. A SHEET fiP ^ 93A ir U S , 5962-87614 REVISION LEVEL A SHEET 5 DESC FORM 19ÌA SEP 87 " " S QOVERNMENT PR,NT1NQ OFFICE
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M38510/75201BCX 5962-8761401DX 8761401CX 54AC32LM 5962-8761401 54AC32 5962-E864 M1L-STD-883 M38510/75201B 513-Z96-5375 5962-8761401CX 54AC32DMQB
Abstract: Vcc + 0.5 V dc DC output voltage .0.5 V dc to Vcc + 0.5 V dc Clamp diode current - - , ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 SIZE A 5962-87809 REVISION LEVEL A SHEET 7 DCSC FORM Ï93A , SEP 87 -
OCR Scan
193-SEP 74S-I2W60912 5962-E1759 MIL-STD-883 MIL-M-38510 MIL-BUL-103

zener diode A39

Abstract: JIS B 0406 ANGULAR TOLERANCE b - - b b b 100V 24V b b b b b b b 93A b T99V , switches are used: D-97 and D-93A 2 The angle is 60° when any of the following auto switches are used: D-90, D-90A, D-97, and D-93A. The angle is 69° when any of the following auto switches are used: D-S99(V , when any of the following auto switches are used: D-97 and D-93A 2 The angle is 60° when any of the following auto switches are used: D-90, D-90A, D-97, and D-93A. The angle is 69° when any of the following
SMC
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F-77607 zener diode A39 JIS B 0406 ANGULAR TOLERANCE D-T79 5v 12v relay smc D-93A ES20-159 LV-1006 LT-2600 SK-81107

smc D-93A

Abstract: Relief Valve Hydraulics b - - b b b 100V 24V b b b b b b b 93A b T99V , switches are used: D-97 and D-93A 2 The angle is 60° when any of the following auto switches are used: D-90, D-90A, D-97, and D-93A. The angle is 69° when any of the following auto switches are used: D-S99(V , when any of the following auto switches are used: D-97 and D-93A 2 The angle is 60° when any of the following auto switches are used: D-90, D-90A, D-97, and D-93A. The angle is 69° when any of the following
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Relief Valve Hydraulics LM 4088 relay DR731 SMC diode catalogue rectangular connector CRBU2W40
Abstract: and Boundary Scan SDIN HOST_S/P RESET S_CS SCLK SDOUT P_DAT [15:0] P_ADD P_R/W , P_CS P_R/W P_ADS GND GND GND GND GND GND GND GND GND RSV _DNC GND RSV , . AL24 P_R/W I Selects between read and write operations on the parallel host interface. HIGH = , Description E8 DTHERMA3 â'" Thermometer 3 diode terminals. See Section 4.8. Leave NC if not used. F9 DTHERMK3 â'" Thermometer 3 diode terminals. See Section 4.8. Leave NC if not used. H45 Semtech
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GX3190 GENDOC-056076

MTL ICC 301

Abstract: voltage - - - - - - - - - - - DC output voltage - - - - - - - - - - - Clamp diode current - - - - - - - - , SUPPLY CENTER DAYTON. OHIO 45444 OESC FORM ! 93A SEP 37 test parameters shall be as specified in , . STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 DESC FORM â'™ 93A , V E R N M E N T PR IN T IN G O FFIC E 1«»0-S4»*24t DUT T Cl â'" NOTE: Cl = 50 pF
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MTL ICC 301 MIL-I-38535 5962-9070301NEX CD54HCT158F/3A

82G35

Abstract: alviso-GM .0.65 W ESD (100 pR 1.5 . 2 KV M , input and output resistor/diode netw orks used for ESD protection and to elim inate substrate latch-up , possible follow ing these conditions: Pre­ heat that does not exceed 93°C on the solder side of the PC
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DDR-SDRAM16 TPS2231 82G35 alviso-GM wistron TSAHCT32 ATI 200M ICS954206 4C701 TPS5130 MAX8743 1D05V 400/533MH
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