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diode FR107 equivalent

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diode FR107 equivalent

Abstract: EF20 TRANSFORMER 1N4007 diode D3 FR107 diode D4 FR107 diode D6 FR107 diode D7 FR107 , C21 1 nF 1000 V R8 R10 560 k 560 k R16 200 k D3 FR107 C6 100 nF D4 FR107 , 470 pF L1 6.8 mH CX2 Dc IN4148 Rc1 C20 470 nF D6 FR107 Rc 15 , 1 W 47 nF 400 V FR107 15 , 1 W R11 4.7 , 1W L 230 V AC N 014aaa917 Fig 1. UBA2028 , : Philips 3C85, Siemens N27 or equivalent · Gap length: 1.0 mm 8. Bill Of Materials (BOM) The
NXP Semiconductors
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diode FR107 equivalent EF20 TRANSFORMER FR107 diode fusistor NXP IN4148 dimmer CFL UM10384

diode FR107 equivalent

Abstract: HIGH FREQUENCY Transformer ee19 consumption. Use a fast blocking diode (D5), such as the 1N4937 or FR107, with a 100 ohm series resistor (R3). Ensure that the diode has a reverse recovery time of 500 ns or less. These diode selections , capacitor C14 to charge and turns on Q1, allowing for current into the BP/M pin through diode D9, thereby initiating a latching shutdown. T1 1 C7 470 pF 50 V 2 L D5 FR107 F1 C1 10 F 400 V , equivalent, gapped for ALG of 88.6 nH/t2 Bobbin EE19, 10 pin, Horizontal Winding Details Shield
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HIGH FREQUENCY Transformer ee19 PC817A pc817A optocoupler EE19 bobbin EE-19 core ee19 transformer schematic DI-145 TNY377PN CISPR-22/EN55022B

LNK625PG

Abstract: diode FR107 equivalent conducted EMI · A fast blocking diode (FR107) was selected for D5, with a 330 series resistor. This damps , 5 R6 12 C2 D5 6.8 F 400 V FR107 LinkSwitch-CV D U1 LNK625PG C6 1 nF 50V 6 NC , induced ringing can affect output regulation. · Diode D7 is placed on the return leg of the secondary , for U1. Diode D6 and C5 rectify the voltage at the feedback winding. Resistor R5 provides external , H, ±10% AV 50 EE16 NC-2H or equivalent, gapped for ALG of 126 nH/t² Winding Details
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EN550022 EN55022B EE16 lnk625 fr107 equivalent EE16 10 pin bobbin EE16 10 pin EE16 10 pin horizontal bobbin DI-201 CISPR-22

diode FR107 equivalent

Abstract: fr107 equivalent , and the energy in T1 is transferred to the output. Schottky diode D7 and capacitor C8 rectify and , C9 220 µF 25 V 5 RTN D6 1N4148 4 EF20 D5 FR107 D3 1N4005GP T1 1 C11 R7 , off once the current into the BP/M pin (via VR3) exceeds 6.5 mA. Diode D6 and capacitor C7 rectify , conducted EMI. Fast diodes such as FR107 are also suitable. TRANSFORMER PARAMETERS Core Material Bobbin EF20, N67 or equivalent, gap for ALG of 203 nH/T2 5+5 pin horizontal Winding Details Winding
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DI-117 TNY279P TNY280P TNY279 ef20 n67 tny280p transformer design ferrite core transformer pin connection TNY279 equivalent

TNY279PN

Abstract: EE20 core transformer Schottky diode D7 and capacitor C8 rectify and filter the output. Inductors L3 and capacitor C9 attenuate , 6.5 mA. Diode D6 and capacitor C7 rectify and smooth the The internal MOSFET in U1 conducts current , 90-265 VAC C8 680 F 25 V +12 V, 1.25 A D6 1N4148 4 EF20 D5 FR107 D3 1N4005GP D4 , diodes were selected for D1 and D3 to reduce low frequency conducted EMI. Fast diodes such as FR107 are also suitable. Transformer Parameters PI-4415-050806 25 EE20 N67 or equivalent, gapped for
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TNY279PN EE20 core transformer EF20 applications EE20 core EE20 core Flyback transformer ee20 current transformer

mb6f

Abstract: diode FR107 equivalent 9 C10 1 C11 22pF 1 CY1 NC 1 CR1 MB6F Diode;600V;0.5A SOP-4 Diodes MB6F 1 D1 FR107 Diode;1000V;1A DO-41 FR107 1 D2 S1ML Diode;1000V;1A; SMA 1 D3 B540C Schottky Diode;40V;5A SMC Diodes Taiwan Semiconduct or , PGND 5 6 8 FR107 D1 R3 150K/1206 1 2 3 4 C4 1uF/25V 1000V/1A C2 , diode for better efficiency. C10 is ceramic capacitor for lower output voltage ripple and R8 is dummy
Monolithic Power Systems
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mb6f EV020-5-S-00A 85VAC 265VAC/50H MP020-5GS MP020-5

mb6f

Abstract: 12V 1A Transformer specification Murata GRM188R71E105KA12D Y Capacitor; 250V DIP Hongke JNK12E222ML02N MB6F Diode;600V;0.5A SOP-4 Diodes MB6F D1 FR107 Diode;1000V;1A DO-41 Diodes FR107 1 D2 BAV21W Diode;200V;0.2A; SOD-123 Diodes BAV21W-7-F 1 D3 B560C 1 FR1 , 4 NC C4 FR107 1000V/1A C2 10uF/400V PGND CP U1 GND FB VCC GND , pass EMI test. D3, C8, C9, C10 and R8 compose output circuit. D3 is schottky diode for better
Monolithic Power Systems
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12V 1A Transformer specification EV020-5-S-00B

ee1616

Abstract: lnk564pn increase the no-load power consumption. · A slow blocking diode was selected for D5. Use only a glass passivated (GP) diode type to ensure a reverse recovery time of 2 s or less. If unavailable, a fast diode such as FR107 may be substituted. These diode selections recycle some of the clamp energy and , RTN Floating. Transformer Parameters Core Material EE1616 NC-2H or equivalent, gapped for ALG , (typically 0.8 V on the FB pin, which is equivalent to 1 V to 1.5 V at the output of the power supply). This
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DI-178 lnk564pn HIGH VOLTAGE DIODE for microwave ovens microwave oven transformer diode sb2100 equivalent EE1616_ EE-16-16 LNK564PN CISPR-22/EN55022

1n5204

Abstract: 1N5204B slow blocking diode was selected for D5. Use only a glass passivated (GP) diode type to ensure a reverse recovery time of 2 s or less. If unavailable, a fast diode such as FR107 may be substituted. These diode selections recycle some of the clamp energy and increase overall efficiency. · Capacitor , the 700 V BVDSS rating of the high voltage MOSFET internal to U1. Diode D6 prevents reverse current , Material EE16 NC-2H or equivalent, gapped for ALG of 237 nH/t2 Bobbin EE16, 10 pin horizontal
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DI-164 LNK562DN 1n5204 1N5204B E-Shield Transformer Techniques for Low EMI EE16 NC-2H

TNY274PN

Abstract: voltage doubler circuit greinacher circuit voltage doubler input. · Use a slow blocking diode D3 in the clamp circuit. Use only a glass-passivated (GP) diode type to ensure a reverse recovery time of 2 s or less. If a GP diode is unavailable, a fast diode, such as FR107, may be used instead. These diode selections recycle some of the clamp , IC from the DRAIN pin, thereby reducing power consumption. Diode DX1 and capacitor CX1 maintain the , datasheet limit for minimum drain voltage to guarantee proper startup and functionality. Diode D4
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DI-153 TNY274PN voltage doubler circuit greinacher circuit gP DIODE topswitch StackFET greinacher

TNY279PN

Abstract: EF20 L2 layers tape 9 V: 9T × 2, 0.45 mm T.I.W., tape Winding Order 30 EF20 NC-2H or equivalent, gapped , Voltage. PI-5015-032808 Figure 2. PI-5016-031008 The output is rectified by diode D7 and , power delivery was selected. · Resistor R2 allows the use of a slow, low cost rectifier diode by limiting the reverse current through D5 when U3 turns on. The selection of a slow diode also improves conducted EMI immunity, but the diode should be a glass-passivated type with a recovery time of 2 s. If
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DI-177 EF20 L2 SB3100 equivalent QP ferrite CORE EF20 TRANSFORMER 9v NC-2H

equivalent sb5100

Abstract: EE25 transformer grouping of consecutively enabled or disabled switching cycles. · Use a fast blocking diode (D5) such as the FR106 or FR107 in the clamp circuit. Ensure that the diode has a reverse recovery time of 500 ns , of T1 and C4 when diode D5 conducts. Operation The isolated flyback converter in Figure 1 shows , reference diode provides output regulation. A feedback current proportional to the output voltage flows through the optocoupler diode (U2A). On the primary side, phototransistor (U2B) drives a small signal
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PKS605PN equivalent sb5100 EE25 transformer t1 EE25 core ALG TRANSISTOR 1N4007 equivalent DI-151

equivalent diode for sb260

Abstract: TNY276P transferred to the output. Schottky diode D6 and capacitor C5 rectify and filter the output. Inductor L3 and , equivalent, gap for ALG of 156 nH/T2 -10 5+5 pin horizontal -20 0.15 Shield: 28T, 2 × 33 AWG , consumption. Selecting a fast diode vs. an ultra-fast diode for D5 will improve efficiency by recovering leakage energy. If glass passivated (1N4007GP) is unavailable a FR107 may be used. dBµV · PI
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TNY276P equivalent diode for sb260 cc charger circuit TNY275P PI-44 ferrite core shield transformer pin connection DI-118

EER28

Abstract: 1N4007 ZENER DIODE Use a fast blocking diode (D6), such as the FR106 or FR107, in the clamp circuit. Ensure that the diode has a reverse recovery time of 500 ns or less. These slower diodes can effectively recycle some , Optocoupler feedback using a simple low cost Zener reference diode (VR3) provides output regulation. A feedback current proportional to the output voltage flows through the optocoupler diode (U2A). On the , . Transformer Parameters Core Material EER28 NC-2H or equivalent, gapped for ALG of 226 nH/t² Bobbin
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DI-149 PKS607YN 1N4007 ZENER DIODE bav21 equivalent diode 12 pin transformer eer28 POWER INTEGRATIONS dual flyback converter EER28 BOBBIN

TNY276PN

Abstract: TNY276PN equivalent controller turns it off, and the energy in T1 is transferred to the output. Schottky diode D6 and capacitor , consumption. · Selecting a fast diode instead of an ultra-fast diode for D5 will improve efficiency by recovering leakage energy. If glass passivated (1N4007GP) is unavailable an FR107 may be used. · For , Resonant Frequency 850 kHz (minimum) AV 50 40 dBV EE16, NC-2H or equivalent, gapped for
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TNY276PN TNY275PN TNY276PN equivalent TNY275PN equivalent t1 ee16 tny275pn application

LNK564PN

Abstract: MOSFET 4166 diode was selected for D7, with a 22 series resistor. Use only a glass passivated (GP) diode type to ensure a reverse recovery time of 2 s or less. If unavailable, a fast diode such as FR107 may be substituted. These diode selections recycle some of the clamp energy and increase overall efficiency. · To , obtain the CV/CC characteristic shown in Figure 2. 70 QP 60 AV dBV 40 30 20 Diode D5 rectifies the output from transformer T1. This rectifier is a low drop Schottky diode in order to maximize
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MOSFET 4166 diode for clippers EE16 transformer construction core ee16 transformer schematic EE16 case LNK56 DI-154

EE13 transformer 5v shield

Abstract: LNK363DN increase the no-load power consumption. · A standard recovery blocking diode was selected for D6, with a 330 ohm series resistor. Use only a Glass Passivated (GP) diode type to ensure a reverse recovery time of 2 s or less. If a GP diode type is unavailable, a fast recovery diode such as FR107 may be , . Resistor R3 and capacitor C5 form a snubber network across the secondary diode and reduce high frequency , and R9 exceeds the opto-coupler diode voltage drop and controls transitions from CV to CC operation
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DI-135 LNK363DN EE13 transformer 5v shield CHARACTERISTICS DIODE 1N4007 EE13 NC-2H core EE13 5V power supply EE13 NC-2H core

TNY274PN

Abstract: EE16 Nippon Ceramic NC-2H for consumption. · Use a slow blocking diode D5 with a 200 series resistor. Use only a Glass Passivated (GP) diode type to ensure a reverse recovery time of 2 s or less. If a GP diode is unavailable, a fast diode such as FR107 may be used instead. These diode selections recycle some of the clamp energy , (Ying Chin YC1607 or equivalent) Bias/Shield: 20T × 2, AWG 34, tape Primary: 80T × 1, AWG 34, 2
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DI-113 EE16 Nippon Ceramic NC-2H for ying chin EE16 bobbin EE16D 2N3904 TNY274

TNY278PN

Abstract: TNY277PN a TNY278PN. October 2008 Key Design Points · Selecting a fast diode vs an ultra-fast diode , (1N4007GP) is unavailable, a FR107 may be used. · To prevent an increase in no-load consumption or false , Material EE19 NC-2H or equivalent, gapped for ALG of 200 nH/t² Bobbin EE19, 10 pin, Vertical
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TNY277PN EE19 vertical 6 pin bobbin ee19 nc-2h EE19 transformer 4 pin vertical EE19 transformer vertical EE19 DI-140

TNY280PN

Abstract: TNY280 increase the no-load power consumption. · Use a slow blocking diode D5 with a 100 series resistor. Use only a glass-passivated (GP) diode type to ensure a reverse recovery time of 2 s or less. If unavailable, a fastdiode such as FR107 may be used instead. These diode selections recycle some of the clamp , the basic single transistor current source, which uses a Zener diode (VR2) to set reference voltage , current for the reference Zener diode varies over a large range. This causes both increased power
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DI-152 TNY280PN TNY280 ZTX458 equivalent 1N5229B Zener Diode EQUIVALENT PI voltage CONTROLLER circuit ZTX458
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