500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Direct from the Manufacturer

Part Manufacturer Description PDF & SAMPLES
PAM2305CGF180 Diodes Incorporated Switching Regulator, Current-mode, 1A, 1800kHz Switching Freq-Max, PDSO6
AZ1084CS2-5.0TRE1 Diodes Incorporated Fixed Positive LDO Regulator, 5V, 1.5V Dropout, BIPolar, PSSO2, ROHS COMPLIANT, TO-263, 3 PIN
AZ431LBRTR-E1 Diodes Incorporated Two Terminal Voltage Reference, 1 Output, 1.24V, Trim/Adjustable, BIPolar, PSSO3, ROHS COMPLIANT, SOT-89, 3 PIN
DDTB123EU-7-F Diodes Incorporated Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-3
APD260VGTR-E1 Diodes Incorporated Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-15, ROHS COMPLIANT PACKAGE-2
AP7335-25WG-7 Diodes Incorporated Fixed Positive LDO Regulator, 2.5V, 0.2V Dropout, PDSO5, GREEN, SOT-25, 5 PIN

diode 35v 10a

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: (NonRepetitive) Forward Current M s m m a x .® Voltage Drop ^ F m ax. @ 16A 35V 40V 45V 35V 40V 45V 35V 40V 45V 35V 40V 45V 35V 40V 45V 60V 80V 100V 35V 40V 45V 35V 40V 45V 35V 40V 45V 35V 40V 45V 35V 40V 45V 35V 40V 45V 60V 80V 100V 35V 40V 45V 35V 40V 45V *Center-tapped dual diode. Ip value shown in , -220AB *20A 2 x 220A 0.6V at 7A, 150°C *20A 2 x 150A 0.57V at 10A, 125°C 0.57V at 10A, 125°C 0.70V at 10A 125°C 0.6V at 15A, 150°C 0.6V at 15A, 150°C 0.73V at 15A, 125°C 0.73V at 15A, 125°C 0.6V at -
OCR Scan
PBYR2040CT diode 20a 40v PBYR1635F PBYR1640F PBYR1645F BYV133-35 BYV133F-35 PBYR2035CT
Abstract: °CAV 3.5V >3.5V >3.5V < 400pF < 400pF < 400pF TYPICAL DEVICE TYPES: MHO,000 SERIES WITH SPEED UP DIODE, Vp @ IC = 10A 3.5V SDM4066, SDM4067 C-48 C o n tr a n Devices , . Inc. ¿Ti NPN TRIPLE DIFFUSED DARLINGTON WITH STABILIZING RESISTORS AND INTEGRATED BY-PASS DIODE , in a TO-3 or equivalent case: VCEO VCE(s) < 2 .7 V < 2 .7 V < 2 .7 V @ !C 10A 10A 10A IB 0.5A 0.5A 0.5A hpE >50 >50 >50 @ ic 10A 10A 10A VCE 5V 5V 5V > 350V >400V >450V -
OCR Scan
diode 500v 10A
Abstract: °C/W < 1.0°C/W >3.5V >3.5V >3.5V < 400pF < 400pF , lp[s3@®(yj©Tr ©¡&TTÄ[L®< HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER -Jolitroi Devices. Inc. i WITH STABILIZING RESISTORS AND INTEGRATED BY-PASS DIODE CONTACT METALLIZATION NPN TRIPLE , 50 >50 >50 ic 10A 10A 10A VCE 5V 5V 5V 25°C VCEO -
OCR Scan
NPN DARLINGTON 10A 500V
Abstract: NUMBER WITH STABILIZING RESISTORS AND INTEGRATED BY-PASS DIODE CONTACT METALLIZATION NPN TRIPLE , in a TO-3 or equivalent case: VCEO >350V >400V >450V VCE(s) ® 50 ic 10A 10A 10A VCE 5V 5V 5V TYPICAL ELECTRICAL CHARACTERISTICS AT , < 400pF < 400pF 3.5V >3.5V TYPICAL DEVICE TYPES: MJ10,000 SERIES WITH SPEED UP DIODE, SDM4066, SDM4067 C-48 ' A v BE(sat) ~ SATURATION -
OCR Scan
Abstract: =35V, TJ =25°C TEST CONDITIONS TJ =25°C, IOUT=5mA - 1.0A VIN =9.5V ~ 22V, IOUT=5mA ~ 1.0A, PDâ , 4.80 TJ =25°C, IOUT=5mA ~ 1.0A Output Voltage VOUT VIN =7.5V ~ 20V, 4.75 IOUT=5mA ~ 1.0A,PD≤15W Dropout Voltage VD TJ =25°C TJ =25°C,IOUT=5mA ~ 1.0A Load Regulation Î"VOUT TJ =25°C,IOUT=0.25A ~ 0.75A VIN =7V ~ 25V, TJ =25°C Line regulation Î"VOUT VIN =7.5V ~ 20V, TJ =25°C, IOUT=1.0A Quiescent Current IQ TJ =25°C, IOUT≤1.0A VIN =7.5V ~ 20V Quiescent Current Change Î"IQ IOUT Unisonic Technologies
Original
APPLICATION NOTES LM7812 LM78XX LM78XXL-TA3-T LM78XXG-TA3-T LM78XXL-TF3-T LM78XXG-TF3-T LM78XXL-T2Q-T
Abstract: =35V, TJ =25°C TEST CONDITIONS TJ =25°C, IOUT=5mA - 1.0A VIN =9.5V ~ 22V, IOUT=5mA ~ 1.0A, PDâ , =5mA ~ 1.0A 10Hz≤f≤100kHz IOUT=5mA VIN =11.5V ~ 21.5V, f=120Hz, TJ =25°C TJ =25°C VIN =35V, TJ , =25°C VIN =35V, TJ =25°C TYP 15.0 TEST CONDITIONS TJ =25°C, IOUT=5mA ~ 1.0A VIN =21V ~ 33V , =5mA ~ 1.0A 10Hz≤f≤100kHz IOUT=5mA VIN =22V ~ 32V,f=120Hz, TJ =25°C TJ =25°C VIN =35V, TJ =25°C , 4.80 TJ =25°C, IOUT=5mA ~ 1.0A Output Voltage VOUT VIN =7.5V ~ 20V, 4.75 IOUT=5mA ~ 1.0A,PDâ Unisonic Technologies
Original
LM78XXG-T2Q-T QW-R101-006
Abstract: =25°C TJ =25°C VIN =35V, TJ =25°C TEST CONDITIONS TJ =25°C, IOUT=5mA - 1.0A VIN =9.5V ~ 22V, IOUT , =25°C TJ =25°C VIN =35V, TJ =25°C TEST CONDITIONS TJ =25°C, IOUT=5mA ~ 1.0A VIN =11.5V ~ 24V, IOUT , =18.5V ~ 28.5V,f=120Hz, TJ =25°C 54 TJ =25°C VIN =35V, TJ =25°C TEST CONDITIONS TJ =25°C, IOUT=5mA ~ 1.0A , =5mA ~ 1.0A 10Hzf100kHz IOUT=5mA VIN =22V ~ 32V,f=120Hz, TJ =25°C TJ =25°C VIN =35V, TJ =25°C MIN 17.28 17.10 , 1) For UTC LM7805 (VIN =10V) PARAMETER SYMBOL TEST CONDITIONS MIN TJ =25°C, IOUT=5mA ~ 1.0A 4.80 Unisonic Technologies
Original
LM7807 REGULATOR IC LM7815 IC LM7808 8V Voltage regulator LM7809 application notes ic LM7812 LM7810 circuit
Abstract: =35V, TJ =25°C TEST CONDITIONS TJ =25°C, IOUT=5mA - 1.0A VIN =9.5V ~ 22V, IOUT=5mA ~ 1.0A, PDâ , =5mA ~ 1.0A Output Voltage VOUT VIN =7.5V ~ 20V, 4.75 IOUT=5mA ~ 1.0A,PD≤15W Dropout Voltage VD TJ =25°C TJ =25°C,IOUT=5mA ~ 1.0A Load Regulation Î"VOUT TJ =25°C,IOUT=0.25A ~ 0.75A VIN =7V ~ 25V, TJ =25°C Line regulation Î"VOUT VIN =7.5V ~ 20V, TJ =25°C, IOUT=1.0A Quiescent Current IQ TJ =25°C, IOUT≤1.0A VIN =7.5V ~ 20V Quiescent Current Change Î"IQ IOUT=5mA ~ 1.0A Output Noise Unisonic Technologies
Original
Abstract: Current Change Test Conditions TJ = 25°C VIN = -17V to -35V, TJ = 25°C Power Pkgs: IO = 5mA to 1.0A, TJ = 25°C T - Pkg: IO = 5mA to 500mA, TJ = 25°C VIN = -17.5V to -35V Power Pkgs: IO = 5mA to 1.0A, P , Pkgs: IO = 1.0A, T - Pkg: IO = 500mA Power Pkgs: TJ = 25°C T - Pkg: TJ = 25°C Power Pkgs: VIN = -35V , -23V to -35V, TJ = 25°C Power Pkgs: IO = 5mA to 1.0A, TJ = 25°C T - Pkg: IO = 5mA to 500mA, TJ = 25°C VIN = -24V to -35V Power Pkgs: IO = 5mA to 1.0A, P 20W T - Pkg: IO = 5mA to 500mA, P 2W VIN = -23V Linfinity Microelectronics
Original
Designs for negative Voltage Regulators SG120 SG7800A/ SG7800A/7800/120
Abstract: Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=10A VSD Diode Forward Voltage , Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/Âus 8.5 11 13.5 Qrr Body Diode , configuration. VDS ID (at VGS=4.5V) 20V 10A RDS(ON) (at VGS=4.5V) < 9.5mâ"¦ RDS(ON) (at VGS=4.0V) < 10mâ"¦ RDS(ON) (at VGS=3.5V) < 10.5mâ"¦ RDS(ON) (at VGS=3.1V) < 11.5mâ"¦ RDS(ON) (at VGS , VGS=4.5V, ID=10A 5.5 7.4 9.5 8 11 14 VGS=4.0V, ID=10A 5.8 7.6 10 mâ Alpha & Omega Semiconductor
Original
AON5820 1E-05
Abstract: TO18 (TO206AA) VCEO 35V 75V 35V 50V 45V 40V 50V 50V 60V 45V 40V 55V 55V 40V 55V 55V , ) SMM3 TO257AB (TO220M) 45V 40V 40V 40V 70V 36V 36V 36V 64V 64V 64V 35V 45V 500V 60V -
Original
2C444 Diode 400V 5A lm1083 transistor 2n1208 BZY55C bc109 spice IRF9024 2C415 2C425 2C746 2N1131L 2N1132
Abstract: 1.0A, T - Pkg: IO = 500mA Power Pkgs: TJ = 25°C T - Pkg: TJ = 25°C Power Pkgs: VIN = -35V, TJ = , : IO = 5mA to 1.0A, TJ = 25°C T - Pkg: IO = 5mA to 500mA, TJ = 25°C VIN = -17.5V to -35V Power Pkgs: IO = 5mA to 1.0A, P ≤ 20W T - Pkg: IO = 5mA to 500mA, P ≤ 2W VIN = -17V to -35V With Line: VIN = -17V to -35V, TJ = 25°C With Load: TJ = 25°C Power Pkgs: IO = 5mA to 1.0A T - Pkg: IO = 5mA , Conditions TJ = 25°C VIN = -23V to -35V, TJ = 25°C Power Pkgs: IO = 5mA to 1.0A, TJ = 25°C T - Pkg: IO Microsemi
Original
SG120-XXR/883B SG120-XXR SG120-XXT/883B SG120-XXT SG120-XXIG/883B SG120-XXIG
Abstract: Forward Transconductance VDS=5V, ID=10A VSD Diode Forward Voltage IS=1A,VGS=0V IS A , Recovery Time IF=10A, dI/dt=500A/Âus 8.5 11 13.5 Qrr Body Diode Reverse Recovery Charge , configuration. VDS ID (at VGS=4.5V) 20V 10A RDS(ON) (at VGS=4.5V) < 9.5mâ"¦ RDS(ON) (at VGS=4.0V) < 10mâ"¦ RDS(ON) (at VGS=3.5V) < 10.5mâ"¦ RDS(ON) (at VGS=3.1V) < 11.5mâ"¦ RDS(ON) (at VGS , VGS=4.5V, ID=10A 5.5 7.4 9.5 8 11 14 VGS=4.0V, ID=10A 5.8 7.6 10 mâ Alpha & Omega Semiconductor
Original
Abstract: : IO = 5mA to 1.0A, TJ = 25°C T - Pkg: IO = 5mA to 500mA, TJ = 25°C VIN = -17.5V to -35V Power Pkgs: IO = 5mA to 1.0A, P 20W T - Pkg: IO = 5mA to 500mA, P 2W VIN = -17V to -35V With Line: VIN = -17V to -35V, TJ = 25°C With Load: TJ = 25°C Power Pkgs: IO = 5mA to 1.0A T - Pkg: IO = 5mA to 500mA , 5mA to 1.0A, TJ = 25°C T - Pkg: IO = 5mA to 500mA, TJ = 25°C VIN = -24V to -35V Power Pkgs: IO = 5mA to 1.0A, P 20W T - Pkg: IO = 5mA to 500mA, P 2W VIN = -23V to -35V With Line: VIN = -23V to Linfinity Microelectronics
Original
capacitor 10mf 35v SG7800A western Microelectronics 20-PIN SG120-XXL/883B SG120-XXL
Abstract: to 1.0A, P s 20W T - PKg; ^ « SmA to 500mA, P S 2W V)N= -23V to -35V With Une: Vm* -23V to -35V , reference design, problems have been eliminated that are normally associated with the zener diode , -15V -18V -20V Input Voltage -35V -35V -35V -35V -40V -40V -40V Input Voltage Differential (Output shorted to ground) 35V 35V 35V 35V 35V 35V 35V Storage Temperature Range , regulators must be protected from momentary input shorts. A high current diode from output to input will -
OCR Scan
SG120/SG320 SQ120/320 SG7800A/7800/120/320 SG120-XXK/883B SG120-XXK
Abstract: Diode, Schottky, 45V/10A, SBS1045, SOT L1 DM Inductor, 3mH, Dr L2 DM Inductor, 3ÂuH, R5 , BD1 Bridge Rectifier,D1010S,1000V/1.0A,SDIP Diode, Ultra Fast, LL4148, SMD ,75V/0.2A, Diode , ,D1010S,1000V/1.0A,SDIP PANJIT Zener diode 1/2W 6.8V,SMD PANJIT Fast Recovery Rectifier, RS1G,200V/1.0A, RMA D3 Diode, Schottky, 40V/30A, SBR3040, TO220 D4 Fast Recovery Rectifier, RS1M,1000V/1.0A, RMA D5 Diode, Ultra Fast, LL4148, SMD L1 Axial Inductor, 1.5mH, 5*7,Dip Active-Semi
Original
07N65 10471 VARISTOR fusible 1a SMD LN4148 ACT51X 2012-O ACT512 ACT510 ACT511 SC053
Abstract: source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel , down) MH1 MH2 ML - - - - - - - Vi = 8V, V os = 0 Vi = 3.5V, V D S=0 Vi = 1.2V, V D S=0 Vi , 0.35 175 mA mA °C 8V, V os = 0 3.5V, V D S= 0 Channel temperature HITACHI 655 , - = 3.5V, Vos = 2V VQ S = 1.2V, Vos = 2V lD = 10mA, V Q S=0 VGS lG - - - - - - 100 , gs = 8V, V ds= 0 VG S = 3.5V, VD S=0 VG S = 1.2V, VD S= 0 V qs = -2.4V, V D S= 0 VG S = 8 V ,V D S= 0 -
OCR Scan
sd2t HAF2002 ADE-208-503 F2002 HAF2001
Abstract: voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation , - - - Unit V V uA uA uA mA mA °C Vi = 8V, VDS = 0 Vi = 3.5V, VDS = 0 Vi = 1.2V, VDS = 0 Vi = 8V, VDS = 0 Vi = 3.5V, VDS = 0 Channel temperature Test Conditions 2 HAF2002 Electrical , us us us us V ns IF = 20A, VGS = 0 IF = 20A, VGS = 0 diF/ dt =50A/us Test Conditions VGS = 3.5V, VDS , = 0 VGS = 3.5V, VDS = 0 VGS = 1.2V, VDS = 0 VGS = ­2.4V, VDS = 0 VGS = 8V, VDS = 0 VGS = 3.5V, VDS = Hitachi Semiconductor
Original
Hitachi DSA002732
Abstract: 3.5V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1mA, VDS = 10V ID = 10A, VGS = 4V * 1 I D = 10A, VGS = 10V * 1 , voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation , 100 50 1 - - - Unit V V uA uA uA mA mA °C Vi = 8V, VDS = 0 Vi = 3.5V, VDS = 0 Vi = 1.2V, VDS = 0 Vi = 8V, VDS = 0 Vi = 3.5V, VDS = 0 Channel temperature Test Conditions 2 HAF2002 Electrical , = 3.5V, VDS = 2V VGS = 1.2V, VDS = 2V I D = 10mA, VGS = 0 I G = 100uA, VDS = 0 I G = ­100uA, VDS = 0 Hitachi
Original
Hitachi DSA002759
Abstract: 25 30 10 80 40 mV mV V Vw - -17.5V to -35V Power Pkgs: l0 = 5mA to 1.0A, P < 20W , .QA, T , - 25°C T - Pkg: lQ= 5mA to 500mA, T j = 25°C VK -2 4 V to-35V Power Pkgs: l0 = 5mA to 1.0A, P , With Une: V , - -23V to-35V, T j« 2 5 °C With Load: T, = 25°C Power Pkgs: lQ « 5mA to 1.0A T - Pkg , design, problems have been eliminated that are normally associated with the zener diode refer ences, such , NEGATIVE REGULATOR Input Voltage -35V -35V -35V -35V -40V -40V -40V . 150°C Input Voltage Differential -
OCR Scan
negative regulator SG120/320 10OKH SG320-XXK SG320-XXR SG120-XXG/883B SG120-XXG
Showing first 20 results.