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UC1612L Texas Instruments UC1612 Dual Schottky Diode ri Buy
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UC3612N Texas Instruments UC3612 Dual Schottky Diode ri Buy

diode 35v 10a

Catalog Datasheet Results Type PDF Document Tags
Abstract: 3.5V >3.5V < 400pF < 400pF , lp[s3@®(yj©Tr ©¡&TTÄ[L®< HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER -Jolitroi Devices. Inc. i WITH STABILIZING RESISTORS AND INTEGRATED BY-PASS DIODE CONTACT METALLIZATION NPN , ) @ 50 ic 10A 10A 10A VCE 5V 5V 5V ... OCR Scan
datasheet

2 pages,
308.35 Kb

NPN DARLINGTON 10A 500V diode 500v 10A datasheet abstract
datasheet frame
Abstract: (NonRepetitive) Forward Current M s m m a x .® Voltage Drop ^ F m ax. @ 16A 35V 40V 45V 35V 40V 45V 35V 40V 45V 35V 40V 45V 35V 40V 45V 60V 80V 100V 35V 40V 45V 35V 40V 45V 35V 40V 45V 35V 40V 45V 35V 40V 45V 35V 40V 45V 60V 80V 100V 35V 40V 45V 35V 40V 45V *Center-tapped dual diode. Ip value shown in , *20A 2 x 220A 0.6V at 7A, 150°C *20A 2 x 150A 0.57V at 10A, 125°C 0.57V at 10A, 125°C 0.70V at 10A 125°C 0.6V at 15A, 150°C 0.6V at 15A, 150°C 0.73V at 15A, 125°C 0.73V at 15A, 125°C 0.6V at ... OCR Scan
datasheet

1 pages,
39.74 Kb

diode 20a 40v datasheet abstract
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Abstract: 3.5V >3.5V >3.5V < 400pF < 400pF < 400pF TYPICAL DEVICE TYPES: MHO,000 SERIES WITH SPEED UP DIODE, Vp @ IC = 10A 3.5V SDM4066 SDM4066, SDM4067 SDM4067 C-48 C o n tr a n Devices. , Inc. ¿Ti NPN TRIPLE DIFFUSED DARLINGTON WITH STABILIZING RESISTORS AND INTEGRATED BY-PASS DIODE , in a TO-3 or equivalent case: VCEO VCE(s) < 2 .7 V < 2 .7 V < 2 .7 V @ !C 10A 10A 10A IB 0.5A 0.5A 0.5A hpE >50 >50 >50 @ ic 10A 10A 10A VCE 5V 5V 5V > 350V >400V >450V ... OCR Scan
datasheet

2 pages,
80.89 Kb

diode 500v 10A datasheet abstract
datasheet frame
Abstract: NUMBER WITH STABILIZING RESISTORS AND INTEGRATED BY-PASS DIODE CONTACT METALLIZATION NPN TRIPLE , in a TO-3 or equivalent case: VCEO >350V >400V >450V VCE(s) ® 50 ic 10A 10A 10A VCE 5V 5V 5V TYPICAL ELECTRICAL CHARACTERISTICS AT , < 400pF < 400pF 3.5V >3.5V TYPICAL DEVICE TYPES: MJ10,000 SERIES WITH SPEED UP DIODE, SDM4066 SDM4066, SDM4067 SDM4067 C-48 ' A v BE(sat) ~ SATURATION ... OCR Scan
datasheet

2 pages,
171.88 Kb

datasheet abstract
datasheet frame
Abstract: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1SS265 1SS265 Features · · · Low Differential Forward Resistance Low Diode Capacitance High Reverse Impedance 150mW 35 Volt Band Switching Diode 4 Maximum Ratings · · Junction Temperature , Capacitance Frequency Resistance VR BV IO Pd RthJA VF 35V 35V 100mA 150mW 350K/W 350K/W 0.85V I=4mm , TL=constant IR=10A IFM = 10mA; IR 100nA VR=20Volts DIMENSIONS Ct 1.5pF Measured at ... Original
datasheet

1 pages,
183.42 Kb

datasheet abstract
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Abstract: RthJA VF 35V 35V 100mA 150mW 350K/W 350K/W 0.85V I=4mm , TL=constant IR=10A IFM = 10mA , MCC Features · · · omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1SS265 1SS265 Low Differential Forward Resistance Low Diode Capacitance High Reverse Impedance 150mW 35 Volt Band Switching Diode 4 Maximum Ratings · · Junction Temperature: 150 Storage Temperature: -55 to +150 Electrical Characteristics @ 25°C Unless Otherwise Specified Reverse Voltage Breakdown Voltage Average ... Original
datasheet

1 pages,
179.13 Kb

datasheet abstract
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Abstract: FORWARD VOLTAGE DROP (lF = 10A, 125°C) O f = 20A ,125°C ) REVERSE CURRENT (VR = 35V. Tq = 25°C) REVERSE CURRENT (VR = 35V. T q = 125°C) CAPACITANCE (V r = 5.0V) RATE OF CHANGE (PIV vs. Time) (VR = 35V max) dv , POWER SCHOTTKY RECTIFIER (COM MON CATHODE) 30 A M PER ES (PER DIODE) FEATURES HIGH EFFICIEN C Y N , LOW VOLTAGE SU P P LIE S TO-3 ABSOLUTE MAXIMUM RATINGS (PER DIODE) PER DIODE V RRM V RWM 'F I f , SURGE CURRENT (8.3 ms NON REPETITIVE SIN E WAVE) 45V 35V 30A 400A 1 4°C/W - 55°C to 150°C - 55°C ... OCR Scan
datasheet

2 pages,
109.8 Kb

00053T1 00053T1 abstract
datasheet frame
Abstract: ,f=120Hz, TJ =25°C TJ =25°C VIN =35V, TJ =25°C TEST CONDITIONS TJ =25°C, IOUT=5mA - 1.0A VIN =9.5V ~ 22V , , TJ =25°C TJ =25°C VIN =35V, TJ =25°C TEST CONDITIONS TJ =25°C, IOUT=5mA ~ 1.0A VIN =11.5V ~ 24V , =18.5V ~ 28.5V,f=120Hz, TJ =25°C 54 TJ =25°C VIN =35V, TJ =25°C TEST CONDITIONS TJ =25°C, IOUT=5mA ~ 1.0A , IOUT=5mA ~ 1.0A 10Hzf100kHz IOUT=5mA VIN =22V ~ 32V,f=120Hz, TJ =25°C TJ =25°C VIN =35V, TJ =25°C MIN 17.28 , 1) For UTC LM7805 LM7805 (VIN =10V) PARAMETER SYMBOL TEST CONDITIONS MIN TJ =25°C, IOUT=5mA ~ 1.0A 4.80 ... Original
datasheet

13 pages,
323.14 Kb

power supply circuit LM7815 LM78XX ic LM7812 LM7809 application notes LM7807 IC LM7808 8V Voltage regulator REGULATOR IC LM7815 APPLICATION NOTES LM7812 LM78XX abstract
datasheet frame
Abstract: SE = 25°C) Per Diode LIMIT 25 100 UNITS mA mA CONDITIONS ÌR Tc = 25° C, V R = 35V Tc = 125° C , CONDITIONS Tc = 25° C, V R = 35V Tc = 125° C Pulse Width = 400jiS Duty Cycle = 1 percent Maximum , 0.60 V iF = 60A Tc = 125" Pulse Width = 300|iS Duty Cycle = 1 percent V R = 5.0 V V R = 35V VF 0.65 4000 700 V C, dv/dt PF V/nS DUAL POWER SCHOTTKY RECTIFIERS 30 Amp Pk per diode, 45V , iF = 10A Pulse Width = 300(iS Duty Cycle = 1 percent Tc = 125° C iF = 20A Pulse Width = 300|iS Duty ... OCR Scan
datasheet

1 pages,
94.06 Kb

1NS822 datasheet abstract
datasheet frame
Abstract: Transistors and MOS FETs Index by Load Load Current Part No. Chip Single Package Avalanche Diode TO220F TO220S 25W 25W 25W 35V 35V 35V 52V 52V 25W 25W 30W 115V 60W 2.5W 3W 2.5W 65V 2.8W 3W 3W 65V 115V 18W 18W 4W 20W 35W 35W 65V 30W 35W 35W 35W 40W 35W 35W 35W 380V 35W 35W 380V 60W 40W 40W 40W 40W 60W 60W 60W RDS (ON) =9m max RDS (ON) =11m max RDS (ON) =14m max RDS (ON) =9m max RDS (ON) =11m max , Approx. 5A 2SD2141 2SD2141 2SD2633 2SD2633 MN638S MN638S SLA5027 SLA5027 FKV460 FKV460 FKV560 FKV560 FKV660 FKV660 FKV460S FKV460S FKV560S FKV560S FKV660S FKV660S 10A and over ... Original
datasheet

1 pages,
16.13 Kb

sta509a sta464c STA464 SPF0001 SLA5027 MN638S datasheet abstract
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Datasheet Content (non pdf)

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Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
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protection circuit is incorporated on each output. When the load current exceeds 1.0A (approximately) on any the output should be clamped to 35V or less to avoid latch up during turn off (inductive fly-back protection - refer AN-213 AN-213 AN-213 AN-213). An on-chip clamp diode capable of handling 800 mA is provided at each output for output current-600 mA per output No output latch-up at 35V Low output ON voltage (550 mV typ @ 600
www.datasheetarchive.com/files/national/htm/nsc02206-v7.htm
National 13/08/1999 11.53 Kb HTM nsc02206-v7.htm
incorporated on each output. When the load current exceeds 1.0A (approximately) on any output for more than a to 35V or less to avoid latch up during turn off (inductive fly-back protection - refer AN-213 AN-213 AN-213 AN-213). An on-chip clamp diode capable of handling 800 mA is provided at each output for this purpose. In addition mA per output No output latch-up at 35V Low output ON voltage (550 mV typ @ 600 mA) High
www.datasheetarchive.com/files/national/htm/nsc02855-v4.htm
National 16/09/1998 9.05 Kb HTM nsc02855-v4.htm
protection circuit is incorporated on each output. When the load current exceeds 1.0A (approximately) on any the output should be clamped to 35V or less to avoid latch up during turn off (inductive fly-back protection - refer AN-213 AN-213 AN-213 AN-213). An on-chip clamp diode capable of handling 800 mA is provided at each output for output current-600 mA per output No output latch-up at 35V Low output ON voltage (550 mV typ @ 600
www.datasheetarchive.com/files/national/htm/nsc02206-v1.htm
National 13/08/1999 11.53 Kb HTM nsc02206-v1.htm
current exceeds 1.0A (approximately) on any output for more than a built-in delay time, nominally 12 µs 70V breakdown. However, for inductive loads the output should be clamped to 35V or less to avoid latch up during turn off (inductive fly-back protection - refer AN-213 AN-213 AN-213 AN-213). An on-chip clamp diode capable of 35V Low output ON voltage (550 mV typ @ 600 mA) High breakdown voltage (70V) Open collector
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