NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: EX752M EX752M EX354T EX354T EX & EX-R series - combined range Single Output 35V/5A 35V/5A 18V/10A 42V/10A Dual Output 2 x 35V/4A 2 x 75V/2A or 1 x 75V/4A or 1 x 150V/2A Triple Output 2 x 35V/4A + 5V/5A , THURLBY THANDAR INSTRUMENTS EX-R Series Compact high power bench DC PSUs SPECIFICATIONS COREL5 EX1810R EX1810R POWER SUPPLY 18V 10A OUTPUT Operating Mode: V O LT S COARSE V O LTA G E Voltage , forward voltages above the rated output voltage. Reverse protection by diode clamp for currents up to ... | Original |
1 pages, |
1810R EN61010-1 diode 35v 10a 600va ups 600VA high voltage constant current source 230v AC voltmeter thandar Thurlby EX4210 thurlby power supply EX1810R TTi ex354D spring loaded terminal EX1810R abstract |
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| Abstract: Summary Part Number BVDSS IRL7Y1905C IRL7Y1905C RDS(on) 0.125 50V ID 10A Seventh Generation , Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight Units , VDS = 2.5V, VGS = 0V, TJ =60°C VGS = 2.5V VGS = -2.5V VGS =10V, ID =10A VDS = 44V uA 100 -100 13 2.0 3.0 8.0 96 23 67 - Ciss C oss C rss VGS = 10V, ID = 10A BVDSS , Gate Voltage Drain Current 350 - - nA nC VDD = 27.5V, ID = 10A, VGS = 5.0V, RG = 12 ... | Original |
7 pages, |
IRL7Y1905C 94192C 94192C abstract |
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| Abstract: Summary Part Number BVDSS IRL7Y1905C IRL7Y1905C RDS(on) 0.125 50V ID 10A Seventh Generation , Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight Units , 1.0 1.1 - - - - - - 2.0 - 10 25 V S( ) VGS = 10V, ID = 10A VDS = VGS , VGS = -2.5V VGS =10V, ID =10A VDS = 44V BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J , - - 310 70 8.0 - - - nA nC VDD = 27.5V, ID = 10A, VGS = 5.0V, RG = 12 ns ... | Original |
7 pages, |
IRL7Y1905C IRL7Y1905C abstract |
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| Abstract: Summary Part Number BVDSS IRL7Y1905C IRL7Y1905C RDS(on) 0.125 50V ID 10A Seventh Generation , Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight Units , 1.0 1.1 - - - - - - 2.0 - 10 25 V S( ) VGS = 10V, ID = 10A VDS = VGS , VGS = -2.5V VGS =10V, ID =10A VDS = 44V BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J , - - 230 70 8.0 350 - - nA nC VDD = 27.5V, ID = 10A, VGS = 5.0V, RG = 12 ns ... | Original |
7 pages, |
IRL7Y1905C 94192B 94192B abstract |
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| Abstract: G E = 15 V, I C =10A T j = 25 ° C T j = 150 ° C Diode forward voltage VF VGE=0V, IF=10A T j = 25 ° C , , IC = 10A) 0.8mJ *) Eon and Ets include losses due to diode recovery. E, SWITCHING ENERGY , = 200V, Tj = 125°C) 20A 1000A/ us 12A I F = 20A I F = 10A I F = 5A DIODE PEAK RATE OF , EmCon diode · 75% lower Eoff compared to previous generation combined with low conduction losses · , behaviour - parallel switching capability · Very soft, fast recovery anti-parallel EmCon diode C G E ... | Original |
14 pages, |
SKP10N60 SKB10N60 SKW10N60 SKP10N60 abstract |
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| Abstract: · Built-in soft start circuit (Output ON/OFF available) Unit *35V for SI-8033S SI-8033S , 5.00 5.10 ICs VIN=21V, IO=1.0A VIN=24V, IO=1.0A VIN=25V, IO=1.0A 84 88 90 91 VIN=20V, IO=1.0A VIN=21V, IO=1.0A VIN=24V, IO=1.0A VIN=25V, IO=1.0A 60 60 60 60 VIN=20V, IO=1.0A VIN=21V, IO=1.0A VIN=24V, IO=1.0A VIN=25V, IO=1.0A 25 80 40 100 50 120 60 130 60 % kHZ 130 VIN=10 to 30V, IO=1.0A VIN=15 to 30V, IO=1.0A ... | Original |
2 pages, |
SI-8150S RK46 si 8050S SI-8000S SI-8033S SI-8050S -8120S SI-8090S SI-8120S diode 35v 10a 8033s SI-8120 8120S 8120-s 8150s SI-8000S abstract |
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| Abstract: DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/us 20.2 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/us 7.9 17 ns 3.6 ns , Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low , 10A RDS(ON) < 20m (VGS = 10V) RDS(ON) < 31m (VGS = 4.5V) - RoHS Compliant. - Halogen Free DFN , : Integrated Schottky Diode G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter ... | Original |
4 pages, |
AON7704 AON7704 abstract |
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| Abstract: C b Drain-Source Diode Forward Current a Maximum Power Dissipation a Tc= 25 C PD Tc=70 , CHAR ACTE R IS TICS b Forward Transconductance 1.8 3 V GS =10V, ID =10A 21 28 m ohm , PF 123 PF 73 PF 14 ns 11 ns 17.5 ns 16 ns V DS =15V, ID =10A,V GS =10V 11 nC V DS =15V, ID =10A,V GS =4.5V 5.4 nC V DS =15V, ID =10A V GS =10V 1.4 nC 2.8 nC V DS = 10V, ID = 10A DYNAMIC CHAR ACTE R IS TICS c Input Capacitance ... | Original |
8 pages, |
STB/P300S STB/P300S abstract |
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| Abstract: RK4410 RK4410 Transistors Switching (30V, 10A) RK4410 RK4410 (4) + 0.5- 0.1 Equivalent circuit (8 , Protection Diode. A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed , IDRP Source Current (Body Diode) Continuous Drain Current + 3.9- 0.15 + 6.0- 0.3 40 , Drain-Source On-State Resistance RDS (on) VDS=10V, ID=1mA ID=10A, VGS=10V m ID=10A, VGS=4.5V ... | Original |
4 pages, |
RK4410 RK4410 abstract |
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| Abstract: recovery anti-parallel EmCon diode · 75% lower Eoff compared to previous generation combined with low , stable behaviour - parallel switching capability · Very soft, fast recovery anti-parallel EmCon diode Type VCE IC VCE(sat) Tj 600V 10A 2.2V 150°C C G E Package , 600V, Tj 150°C IF Diode forward current TC = 25°C 21 TC = 100°C 10 Diode pulsed , , junction case Diode thermal resistance, junction case RthJA Thermal resistance, TO-220AB ... | Original |
14 pages, |
SKB10N60 Q67040-S4217 SKW10N60 SKP10N60 SKP10N60 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| 765PI-800 765PI-800 765PI-800 765PI-800 [ August 1999 - Ed: 2B RECOVERY RECTIFIER DIODES I F(AV) 10 A V RRM 800 V Tj (max) 1505C 1505C 1505C 1505C V F (max) 1.35 V trr (max) 300 ns MAIN PRODUCTS CHARACTERISTICS Fast .5 10 A I FSM Surge non repetitive forward current Tp = 10 ms Sinusoidal 120 A P tot Tj = 100 5 C 1 mA V F * Forward voltage drop Tj = 25 5 C I F = 10 A 1.4 V V R = 30V 300 ns Qrr T j = 25 5 C I F = 10A dI F /dt = - 50A/ m s www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3405-v3.htm |
STMicroelectronics | 25/05/2000 | 6.41 Kb | HTM | 3405-v3.htm |
| - Ed: 2B RECOVERY RECTIFIER DIODES I F(AV) 10 A V RRM 800 V Tj (max) 1505C 1505C 1505C 1505C V F (max) 1.35 (AV) Average forward current Tc = 1005 C d = 0.5 10 A I FSM Surge non repetitive forward current Tp = 10 20 m A Tj = 100 5 C 1 mA V F * Forward voltage drop Tj = 25 5 C I F = 10 A 1.4 V Tj 5 C I F = 10A dI F /dt = - 50A/ m s V R = 200V 2.3 m C RECOVERY CHARACTERISTICS ST | RECOVERY RECTIFIER DIODES Datasheet www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3405.htm |
STMicroelectronics | 20/10/2000 | 6.7 Kb | HTM | 3405.htm |
| 4R7CAT2A 13.0 4.0 D1,D2,D3,D4 DIODES, RECTIFIER 1.0A DIODES INC. 1N4005-T 1N4005-T 1N4005-T 1N4005-T 14.0 2.0 D5,D6 DIODE, FAST SWITCHING DIODES INC. BAV20W-7-F BAV20W-7-F BAV20W-7-F BAV20W-7-F 15.0 1.0 D7 DIODE, ULTRA FAST RECOVERY SILICON RECTIFIER CENTRAL SEMI.CMR1U-10M CMR1U-10M CMR1U-10M CMR1U-10M 16.0 1.0 D8 DIODE, SUPER BARRIER RECTIFIER 10A DIODES INC. SBR10U300CT SBR10U300CT SBR10U300CT SBR10U300CT 17.0 1.0 NUT, TIN PLATE#4 .0 C3 CAP, 22uF 20% 35V ALUM NIC NRSZ220M35V5X11F 4.0 1.0 C6 CAP, 0603 10nF 10% 50V X7R AVX 06035C103 06035C103 06035C103 06035C103 SCREW 20.0 1.0 D9 DIODE, RECOVERY RECTIFIER CENTRAL SEMI.CMR1U-02M CMR1U-02M CMR1U-02M CMR1U-02M 21.0 0.0 D10 DIODE, ULTRA FAST www.datasheetarchive.com/download/87676996-365037ZC/1816a.zip (1816A_Rev5 .xls) |
Linear | 21/09/2012 | 1914.58 Kb | ZIP | 1816a.zip |
| .0 C21 CAP, 0603 4.7pF +/-0.1pF 50V NP0 AVX 06035A4R7CAT2A 06035A4R7CAT2A 06035A4R7CAT2A 06035A4R7CAT2A 12.0 4.0 D1,D2,D3,D4 DIODES, RECTIFIER 1.0A DIODES INC. 1N4005-T 1N4005-T 1N4005-T 1N4005-T 13.0 2.0 D5,D6 DIODE, FAST SWITCHING DIODES INC. BAV20W-7-F BAV20W-7-F BAV20W-7-F BAV20W-7-F 14.0 1.0 D7 DIODE, ULTRA FAST RECOVERY SILICON RECTIFIER CENTRAL SEMI.CMR1U-10M CMR1U-10M CMR1U-10M CMR1U-10M 15.0 1.0 D8 DIODE, SUPER BARRIER RECTIFIER 10A DIODES INC. SBR10U300CT SBR10U300CT SBR10U300CT SBR10U300CT 16.0 1.0 D9 DIODE, RECOVERY RECTIFIER CENTRAL SEMI.CMR1U-02M CMR1U-02M CMR1U-02M CMR1U-02M 17.0 1.0 F1 FUSE FILM RUBYCON 450MMK474K 450MMK474K 450MMK474K 450MMK474K 3.0 1.0 C3 CAP, 22uF 20% 35V ALUM NIC NRSZ220M35V5X11F 4.0 1.0 C6 CAP, 0603 10n www.datasheetarchive.com/download/87676996-365037ZC/1816a.zip (1816ACF.xls) |
Linear | 21/09/2012 | 1914.58 Kb | ZIP | 1816a.zip |
| INFINEON SPP17N80C3 SPP17N80C3 SPP17N80C3 SPP17N80C3 XSTR, COOL MOS POWER TRANSISTOR DIODE, SUPER BARRIER RECTIFIER 10A DIODES INC. SBR10U SBR10U SBR10U SBR10U VISHAY CRCW2512200KJNEG CRCW2512200KJNEG CRCW2512200KJNEG CRCW2512200KJNEG CAP, 22uF 20% 35V ALUM RES, 0603 4.32k OHMS 1% 1/10W 1/10W 1/10W 1/10W VISHAY CRCW06034K32FKEA CRCW06034K32FKEA CRCW06034K32FKEA CRCW06034K32FKEA RES TRBLK 5_1.Normal Diode TRANSFORMER FLAT COMPACT_8.Normal TRANSFORMER FLAT COMPACT_8.Normal VINSENSE GATE Value PCB Footprint Description DIODE, TRANSIENT VOLTAGE SUPPRESSOR Part Number LITTELFUSE INC. SMCJ220 SMCJ220 SMCJ220 SMCJ220 OPTION Fast Switching 4th Part Field Diodes Inc. Filename 5th Part Field DIODE, RECOVERY RECTIFIER www.datasheetarchive.com/download/87676996-365037ZC/1816a.zip (1816A_REV5.DSN) |
Linear | 21/09/2012 | 1914.58 Kb | ZIP | 1816a.zip |
| .0 D1 ZENER DIODE, SOD-523 8.0 0.0 D5 SCHOTTKY DIODE SOT-323 9.0 0.0 L2 IND., 7.8uH,10A 10.0 0.0 L3 IND., 6.9uH, 10A 11.0 0.0 Q5 MOSFET N-CHAN., ZXMN10A07F, SOT-23 12.0 0.0 Q6 SANYO, 16SP270M 16SP270M 16SP270M 16SP270M+T 5.0 2.0 COUT1,COUT2 CAP., ALUM, 330uF, 35V SANYO, 35MV330AX 35MV330AX 35MV330AX 35MV330AX+TS 6.0 5.0 COUT3-COUT7 CAP .0 DBOOST DIODE, BAS19 BAS19 BAS19 BAS19, SOT-323 DIODES INC. BAS19W-7-F BAS19W-7-F BAS19W-7-F BAS19W-7-F 10.0 1.0 CSS CAP., X7R, 1000pF, 50V, 20%, 0603 AVX, 06035C102MAT 06035C102MAT 06035C102MAT 06035C102MAT 11.0 1.0 D2 DIODE, SCHOTTKY RECTIFIER 1.0A DIODES INC. B1100-13-T B1100-13-T B1100-13-T B1100-13-T 12.0 1.0 L1 www.datasheetarchive.com/download/78763878-364602ZC/1170a.zip (DC1170acf.xls) |
Linear | 07/10/2009 | 748.5 Kb | ZIP | 1170a.zip |
| extensions allow for high breakdown voltages of 35V and good switching performance on the standard CMOS -awaited solutions to power control design issues. The complementary bipolar devices also have 35V breakdown voltage space and adds cost and weight to the design. The 35V breakdown voltage ratings of both the CMOS and particles with the outer "skin" of the vehicle. Additionally, diodes with a 1.0A current handling capability www.datasheetarchive.com/files/harris/milspace/tech.htm |
Harris | 15/08/1997 | 5.53 Kb | HTM | tech.htm |
| Base Peak Current 10 A P tot Total Dissipation at T c 3 25 o C 130 W T stg Storage I B = 20 mA I C = 5 A I B = 20 mA T c = 100 o C I C = 10 A I B = 40 mA I C = 10 A I B = 40 mA T c = 100 o C I C = 20 A I B = 80 mA I C = 20 A = 80 mA T c = 100 o C 2.6 2.5 3.3 V V V BE * Base-Emitter Voltage I C = 10 A V CE = 3 V I C = 10 A V CE = 3 V T c = 100 o C 1 1.8 1.6 3 V V h FE * DC Current www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4106.htm |
STMicroelectronics | 20/10/2000 | 8.16 Kb | HTM | 4106.htm |
| 12000 6000 V F * Diode Forward Voltage I F = 5 A I F = 5 A T c = 100 o C I F = 10 A I F = 10 A Collector Peak Current 40 A I B Base Current 6 A I BM Base Peak Current 10 A P tot Total Dissipation at T c I C = 10 A I B = 40 mA I C = 10 A I B = 40 mA T c = 100 o C I C = 20 A I B = 80 mA I C .6 2.5 3.3 V V V BE * Base-Emitter Voltage I C = 10 A V CE = 3 V I C = 10 A V CE = 3 V T c T c = 100 o C I C = 10 A V CE = 3 V I C = 10 A V CE = 3 V T c = 100 o C I C = 20 A V www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4106-v2.htm |
STMicroelectronics | 14/06/1999 | 5.8 Kb | HTM | 4106-v2.htm |