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UC3610J Texas Instruments 50V, SILICON, BRIDGE RECTIFIER DIODE, HERMETIC SEALED, CERAMIC, DIP-8 ri Buy
SM74611KTTR Texas Instruments Smart Bypass Diode 3-DDPAK/TO-263 -40 to 125 ri Buy Buy
LM74610QDGKTQ1 Texas Instruments Zero Iq Reverse Polarity Protection Smart Diode Controller 8-VSSOP -40 to 125 ri Buy

diode 35v 10a

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: (NonRepetitive) Forward Current M s m m a x .® Voltage Drop ^ F m ax. @ 16A 35V 40V 45V 35V 40V 45V 35V 40V 45V 35V 40V 45V 35V 40V 45V 60V 80V 100V 35V 40V 45V 35V 40V 45V 35V 40V 45V 35V 40V 45V 35V 40V 45V 35V 40V 45V 60V 80V 100V 35V 40V 45V 35V 40V 45V *Center-tapped dual diode. Ip value shown in , -220AB -220AB *20A 2 x 220A 0.6V at 7A, 150°C *20A 2 x 150A 0.57V at 10A, 125°C 0.57V at 10A, 125°C 0.70V at 10A 125°C 0.6V at 15A, 150°C 0.6V at 15A, 150°C 0.73V at 15A, 125°C 0.73V at 15A, 125°C 0.6V at ... OCR Scan
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1 pages,
39.74 Kb

PBYR2040CT diode 20a 40v TEXT
datasheet frame
Abstract: °CAV 3.5V >3.5V >3.5V < 400pF < 400pF < 400pF TYPICAL DEVICE TYPES: MHO,000 SERIES WITH SPEED UP DIODE, Vp @ IC = 10A 3.5V SDM4066 SDM4066, SDM4067 SDM4067 C-48 C o n tr a n Devices , . Inc. ¿Ti NPN TRIPLE DIFFUSED DARLINGTON WITH STABILIZING RESISTORS AND INTEGRATED BY-PASS DIODE , in a TO-3 or equivalent case: VCEO VCE(s) < 2 .7 V < 2 .7 V < 2 .7 V @ !C 10A 10A 10A IB 0.5A 0.5A 0.5A hpE >50 >50 >50 @ ic 10A 10A 10A VCE 5V 5V 5V > 350V >400V >450V ... OCR Scan
datasheet

2 pages,
80.89 Kb

diode 500v 10A TEXT
datasheet frame
Abstract: °C/W < 1.0°C/W >3.5V >3.5V >3.5V < 400pF < 400pF , lp[s3@®(yj©Tr ©¡&TTÄ[L®< HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER -Jolitroi Devices. Inc. i WITH STABILIZING RESISTORS AND INTEGRATED BY-PASS DIODE CONTACT METALLIZATION NPN TRIPLE , 50 >50 >50 ic 10A 10A 10A VCE 5V 5V 5V 25°C VCEO ... OCR Scan
datasheet

2 pages,
308.35 Kb

diode 500v 10A NPN DARLINGTON 10A 500V TEXT
datasheet frame
Abstract: NUMBER WITH STABILIZING RESISTORS AND INTEGRATED BY-PASS DIODE CONTACT METALLIZATION NPN TRIPLE , in a TO-3 or equivalent case: VCEO >350V >400V >450V VCE(s) ® 50 ic 10A 10A 10A VCE 5V 5V 5V TYPICAL ELECTRICAL CHARACTERISTICS AT , < 400pF < 400pF 3.5V >3.5V TYPICAL DEVICE TYPES: MJ10,000 SERIES WITH SPEED UP DIODE, SDM4066 SDM4066, SDM4067 SDM4067 C-48 ' A v BE(sat) ~ SATURATION ... OCR Scan
datasheet

2 pages,
171.88 Kb

TEXT
datasheet frame
Abstract: =35V, TJ =25°C TEST CONDITIONS TJ =25°C, IOUT=5mA - 1.0A VIN =9.5V ~ 22V, IOUT=5mA ~ 1.0A, PDâ , 4.80 TJ =25°C, IOUT=5mA ~ 1.0A Output Voltage VOUT VIN =7.5V ~ 20V, 4.75 IOUT=5mA ~ 1.0A,PD≤15W Dropout Voltage VD TJ =25°C TJ =25°C,IOUT=5mA ~ 1.0A Load Regulation ΔVOUT TJ =25°C,IOUT=0.25A ~ 0.75A VIN =7V ~ 25V, TJ =25°C Line regulation ΔVOUT VIN =7.5V ~ 20V, TJ =25°C, IOUT=1.0A Quiescent Current IQ TJ =25°C, IOUT≤1.0A VIN =7.5V ~ 20V Quiescent Current Change ΔIQ IOUT ... Unisonic Technologies
Original
datasheet

13 pages,
323.51 Kb

LM78XX TEXT
datasheet frame
Abstract: =35V, TJ =25°C TEST CONDITIONS TJ =25°C, IOUT=5mA - 1.0A VIN =9.5V ~ 22V, IOUT=5mA ~ 1.0A, PDâ , =5mA ~ 1.0A 10Hz≤f≤100kHz IOUT=5mA VIN =11.5V ~ 21.5V, f=120Hz, TJ =25°C TJ =25°C VIN =35V, TJ , =25°C VIN =35V, TJ =25°C TYP 15.0 TEST CONDITIONS TJ =25°C, IOUT=5mA ~ 1.0A VIN =21V ~ 33V , =5mA ~ 1.0A 10Hz≤f≤100kHz IOUT=5mA VIN =22V ~ 32V,f=120Hz, TJ =25°C TJ =25°C VIN =35V, TJ =25°C , 4.80 TJ =25°C, IOUT=5mA ~ 1.0A Output Voltage VOUT VIN =7.5V ~ 20V, 4.75 IOUT=5mA ~ 1.0A,PDâ ... Unisonic Technologies
Original
datasheet

13 pages,
297.68 Kb

LM78XX TEXT
datasheet frame
Abstract: =25°C TJ =25°C VIN =35V, TJ =25°C TEST CONDITIONS TJ =25°C, IOUT=5mA - 1.0A VIN =9.5V ~ 22V, IOUT , =25°C TJ =25°C VIN =35V, TJ =25°C TEST CONDITIONS TJ =25°C, IOUT=5mA ~ 1.0A VIN =11.5V ~ 24V, IOUT , =18.5V ~ 28.5V,f=120Hz, TJ =25°C 54 TJ =25°C VIN =35V, TJ =25°C TEST CONDITIONS TJ =25°C, IOUT=5mA ~ 1.0A , =5mA ~ 1.0A 10Hzf100kHz IOUT=5mA VIN =22V ~ 32V,f=120Hz, TJ =25°C TJ =25°C VIN =35V, TJ =25°C MIN 17.28 17.10 , 1) For UTC LM7805 LM7805 (VIN =10V) PARAMETER SYMBOL TEST CONDITIONS MIN TJ =25°C, IOUT=5mA ~ 1.0A 4.80 ... Unisonic Technologies
Original
datasheet

13 pages,
323.14 Kb

LM7810 IC power supply circuit LM7815 ma 1050 LM7824 LM7810 circuit ic LM7812 LM78XX LM7809 application notes IC LM7808 8V Voltage regulator REGULATOR IC LM7815 LM7807 APPLICATION NOTES LM7812 TEXT
datasheet frame
Abstract: =35V, TJ =25°C TEST CONDITIONS TJ =25°C, IOUT=5mA - 1.0A VIN =9.5V ~ 22V, IOUT=5mA ~ 1.0A, PDâ , =5mA ~ 1.0A Output Voltage VOUT VIN =7.5V ~ 20V, 4.75 IOUT=5mA ~ 1.0A,PD≤15W Dropout Voltage VD TJ =25°C TJ =25°C,IOUT=5mA ~ 1.0A Load Regulation ΔVOUT TJ =25°C,IOUT=0.25A ~ 0.75A VIN =7V ~ 25V, TJ =25°C Line regulation ΔVOUT VIN =7.5V ~ 20V, TJ =25°C, IOUT=1.0A Quiescent Current IQ TJ =25°C, IOUT≤1.0A VIN =7.5V ~ 20V Quiescent Current Change ΔIQ IOUT=5mA ~ 1.0A Output Noise ... Unisonic Technologies
Original
datasheet

12 pages,
318.71 Kb

LM78XX TEXT
datasheet frame
Abstract: Current Change Test Conditions TJ = 25°C VIN = -17V to -35V, TJ = 25°C Power Pkgs: IO = 5mA to 1.0A, TJ = 25°C T - Pkg: IO = 5mA to 500mA, TJ = 25°C VIN = -17.5V to -35V Power Pkgs: IO = 5mA to 1.0A, P , Pkgs: IO = 1.0A, T - Pkg: IO = 500mA Power Pkgs: TJ = 25°C T - Pkg: TJ = 25°C Power Pkgs: VIN = -35V , -23V to -35V, TJ = 25°C Power Pkgs: IO = 5mA to 1.0A, TJ = 25°C T - Pkg: IO = 5mA to 500mA, TJ = 25°C VIN = -24V to -35V Power Pkgs: IO = 5mA to 1.0A, P 20W T - Pkg: IO = 5mA to 500mA, P 2W VIN = -23V ... Linfinity Microelectronics
Original
datasheet

36 pages,
368.95 Kb

Designs for negative Voltage Regulators SG120 SG7800A/ TEXT
datasheet frame
Abstract: Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=10A VSD Diode Forward Voltage , Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/Âus 8.5 11 13.5 Qrr Body Diode , configuration. VDS ID (at VGS=4.5V) 20V 10A RDS(ON) (at VGS=4.5V) < 9.5mΩ RDS(ON) (at VGS=4.0V) < 10mΩ RDS(ON) (at VGS=3.5V) < 10.5mΩ RDS(ON) (at VGS=3.1V) < 11.5mΩ RDS(ON) (at VGS , VGS=4.5V, ID=10A 5.5 7.4 9.5 8 11 14 VGS=4.0V, ID=10A 5.8 7.6 10 mâ ... Alpha & Omega Semiconductor
Original
datasheet

6 pages,
269.14 Kb

AON5820 TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
Freq. 500KHz 500KHz 500KHz 200KHz 200KHz 200KHz Efficiency V INPUT = 35V V OUT = 5.1V 10A 80% at 200KHz high output currents with low power dissipation - up to 10A in the Multiwatt pow er package and 3.5A in across the D diode as indicated) when Q1 is OFF. During this second phase the current cir - culates again behaviour of the emitter voltage (which is practically the volt - age across the recirculation diode), where the power saturation and the forward V F drop across the diode era taken into account. The ON and OFF
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1711-v1.htm
STMicroelectronics 02/04/1999 77.25 Kb HTM 1711-v1.htm
Switching Freq. 500KHz 500KHz 500KHz 200KHz 200KHz 200KHz Efficiency V INPUT = 35V V OUT = 5.1V 10A board) : n = 83% (V i = 35V ; V o = V REF ; I o = 10A ; f SW = 200KHz) V o RIPPLE = 30mV high output currents with low power dissipation - up to 10A in the Multiwatt pow er package and 3.5A forward voltage across the D diode as indicated) when Q1 is OFF. During this second phase the current practically the volt - age across the recirculation diode), where the power saturation and the forward V F
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1711-v3.htm
STMicroelectronics 25/05/2000 79.09 Kb HTM 1711-v3.htm
Freq. 500KHz 500KHz 500KHz 200KHz 200KHz 200KHz Efficiency V INPUT = 35V V OUT = 5.1V 10A 80% at 200KHz power dissipation - up to 10A in the Multiwatt pow er package and 3.5A in a DIP package . 1/47 THE Vsat when Q is ON and -V F ( with V F the forward voltage across the D diode as indicated) when Q1 is (which is practically the volt - age across the recirculation diode), where the power saturation and the forward V F drop across the diode era taken into account. The ON and OFF times are established by the fol
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1711.htm
STMicroelectronics 20/10/2000 83.97 Kb HTM 1711.htm
Freq. 500KHz 500KHz 500KHz 200KHz 200KHz 200KHz Efficiency V INPUT = 35V V OUT = 5.1V 10A 80% at 200KHz high output currents with low power dissipation - up to 10A in the Multiwatt pow er package and 3.5A in across the D diode as indicated) when Q1 is OFF. During this second phase the current cir - culates again behaviour of the emitter voltage (which is practically the volt - age across the recirculation diode), where the power saturation and the forward V F drop across the diode era taken into account. The ON and OFF
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1711-v2.htm
STMicroelectronics 14/06/1999 77.21 Kb HTM 1711-v2.htm
fault protection circuit is incorporated on each output. When the load current exceeds 1.0A inductive loads the output should be clamped to 35V or less to avoid latch up during turn off (inductive fly-back protection - refer AN-213 AN-213). An on-chip clamp diode capable of handling 800 mA is provided at each TTL compatible inputs High output current-600 mA per output No output latch-up at 35V Low
/datasheets/files/national/htm/nsc05368.htm
National 18/12/1998 10.25 Kb HTM nsc05368.htm
fault protection circuit is incorporated on each output. When the load current exceeds 1.0A inductive loads the output should be clamped to 35V or less to avoid latch up during turn off (inductive fly-back protection - refer AN-213 AN-213). An on-chip clamp diode capable of handling 800 mA is provided at each TTL compatible inputs High output current-600 mA per output No output latch-up at 35V Low
/datasheets/files/national/htm/nsc02206-v1.htm
National 13/08/1999 11.53 Kb HTM nsc02206-v1.htm
fault protected circuit is incorporated on each output. When the load current exceeds 1.0A inductive loads the output should be clamped to 35V or less to avoid latch up during turn off (inductive fly-back protection - refer AN-213 AN-213). An on-chip clamp diode capable of handling 800 mA is provided at each compatible inputs High output current-600 mA per output No output latch-up at 35V Low output ON
/datasheets/files/national/htm/nsc02836-v5.htm
National 16/08/2002 15.22 Kb HTM nsc02836-v5.htm
When the load current exceeds 1.0A (approximately) on any output for more than a built-in delay time each and offer a 70V breakdown. However, for inductive loads the output should be clamped to 35V or diode capable of handling 800 mA is provided at each output for this purpose. In addition, the DS3668 DS3668 latch-up at 35V Low output ON voltage (550 mV typ @ 600 mA) High breakdown voltage (70V) Open
/datasheets/files/national/ds3668.html
National 25/09/2003 11.7 Kb HTML ds3668.html
When the load current exceeds 1.0A (approximately) on any output for more than a built-in delay time each and offer a 70V breakdown. However, for inductive loads the output should be clamped to 35V or diode capable of handling 800 mA is provided at each output for this purpose. In addition, the DS3668 DS3668 latch-up at 35V Low output ON voltage (550 mV typ @ 600 mA) High breakdown voltage (70V) Open
/datasheets/files/national/pf/ds3668.html
National 17/02/2005 10.03 Kb HTML ds3668.html