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KHHD010A0F GE Critical Power Hammerhead series, 48V (18V-75V) 3.3V 10A 90% visit GE Critical Power
KHHD010A0A GE Critical Power Hammerhead series, 48V (18V-75V) 5V 10A 91% visit GE Critical Power
EHHD010A0B GE Critical Power Hammerhead series, 48V (18V-75V) 12V 10A 93% visit GE Critical Power
AXA010A0F93-SR GE Critical Power 12V AustinLynx 10A Non-Isolated DC-DC Power Module visit GE Critical Power
KHHD010A0F41-SRZ GE Critical Power KHHD010A0F Hammerhead™ Series; DC-DC Converter Power Module, 18-75Vdc Input; 3.3Vdc, 10A Output visit GE Critical Power
KSTW010A0A41Z GE Critical Power KSTW010A0A Barracuda™ Series; DC-DC Converter Power Module, 36-75Vdc Input; 5.0Vdc, 10A Output visit GE Critical Power

diode 35v 10a

Catalog Datasheet MFG & Type PDF Document Tags

diode 20a 40v

Abstract: PBYR2040CT (NonRepetitive) Forward Current M s m m a x .® Voltage Drop ^ F m ax. @ 16A 35V 40V 45V 35V 40V 45V 35V 40V 45V 35V 40V 45V 35V 40V 45V 60V 80V 100V 35V 40V 45V 35V 40V 45V 35V 40V 45V 35V 40V 45V 35V 40V 45V 35V 40V 45V 60V 80V 100V 35V 40V 45V 35V 40V 45V *Center-tapped dual diode. Ip value shown in , -220AB *20A 2 x 220A 0.6V at 7A, 150°C *20A 2 x 150A 0.57V at 10A, 125°C 0.57V at 10A, 125°C 0.70V at 10A 125°C 0.6V at 15A, 150°C 0.6V at 15A, 150°C 0.73V at 15A, 125°C 0.73V at 15A, 125°C 0.6V at
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diode 500v 10A

Abstract: °CAV 3.5V >3.5V >3.5V < 400pF < 400pF < 400pF TYPICAL DEVICE TYPES: MHO,000 SERIES WITH SPEED UP DIODE, Vp @ IC = 10A 3.5V SDM4066, SDM4067 C-48 C o n tr a n Devices , . Inc. ¿Ti NPN TRIPLE DIFFUSED DARLINGTON WITH STABILIZING RESISTORS AND INTEGRATED BY-PASS DIODE , in a TO-3 or equivalent case: VCEO VCE(s) < 2 .7 V < 2 .7 V < 2 .7 V @ !C 10A 10A 10A IB 0.5A 0.5A 0.5A hpE >50 >50 >50 @ ic 10A 10A 10A VCE 5V 5V 5V > 350V >400V >450V
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diode 500v 10A

NPN DARLINGTON 10A 500V

Abstract: diode 500v 10A °C/W < 1.0°C/W >3.5V >3.5V >3.5V < 400pF < 400pF , lp[s3@®(yj©Tr ©¡&TTÄ[L®< HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER -Jolitroi Devices. Inc. i WITH STABILIZING RESISTORS AND INTEGRATED BY-PASS DIODE CONTACT METALLIZATION NPN TRIPLE , 50 >50 >50 ic 10A 10A 10A VCE 5V 5V 5V 25°C VCEO
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NPN DARLINGTON 10A 500V

SDM4066

Abstract: NUMBER WITH STABILIZING RESISTORS AND INTEGRATED BY-PASS DIODE CONTACT METALLIZATION NPN TRIPLE , in a TO-3 or equivalent case: VCEO >350V >400V >450V VCE(s) ® 50 ic 10A 10A 10A VCE 5V 5V 5V TYPICAL ELECTRICAL CHARACTERISTICS AT , < 400pF < 400pF 3.5V >3.5V TYPICAL DEVICE TYPES: MJ10,000 SERIES WITH SPEED UP DIODE, SDM4066, SDM4067 C-48 ' A v BE(sat) ~ SATURATION
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APPLICATION NOTES LM7812

Abstract: =35V, TJ =25°C TEST CONDITIONS TJ =25°C, IOUT=5mA - 1.0A VIN =9.5V ~ 22V, IOUT=5mA ~ 1.0A, PDâ , 4.80 TJ =25°C, IOUT=5mA ~ 1.0A Output Voltage VOUT VIN =7.5V ~ 20V, 4.75 IOUT=5mA ~ 1.0A,PD≤15W Dropout Voltage VD TJ =25°C TJ =25°C,IOUT=5mA ~ 1.0A Load Regulation Î"VOUT TJ =25°C,IOUT=0.25A ~ 0.75A VIN =7V ~ 25V, TJ =25°C Line regulation Î"VOUT VIN =7.5V ~ 20V, TJ =25°C, IOUT=1.0A Quiescent Current IQ TJ =25°C, IOUT≤1.0A VIN =7.5V ~ 20V Quiescent Current Change Î"IQ IOUT
Unisonic Technologies
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APPLICATION NOTES LM7812 LM78XX LM78XXL-TA3-T LM78XXG-TA3-T LM78XXL-TF3-T LM78XXG-TF3-T LM78XXL-T2Q-T
Abstract: =35V, TJ =25°C TEST CONDITIONS TJ =25°C, IOUT=5mA - 1.0A VIN =9.5V ~ 22V, IOUT=5mA ~ 1.0A, PDâ , =5mA ~ 1.0A 10Hz≤f≤100kHz IOUT=5mA VIN =11.5V ~ 21.5V, f=120Hz, TJ =25°C TJ =25°C VIN =35V, TJ , =25°C VIN =35V, TJ =25°C TYP 15.0 TEST CONDITIONS TJ =25°C, IOUT=5mA ~ 1.0A VIN =21V ~ 33V , =5mA ~ 1.0A 10Hz≤f≤100kHz IOUT=5mA VIN =22V ~ 32V,f=120Hz, TJ =25°C TJ =25°C VIN =35V, TJ =25°C , 4.80 TJ =25°C, IOUT=5mA ~ 1.0A Output Voltage VOUT VIN =7.5V ~ 20V, 4.75 IOUT=5mA ~ 1.0A,PDâ Unisonic Technologies
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LM78XXG-T2Q-T QW-R101-006

APPLICATION NOTES LM7812

Abstract: LM7807 =25°C TJ =25°C VIN =35V, TJ =25°C TEST CONDITIONS TJ =25°C, IOUT=5mA - 1.0A VIN =9.5V ~ 22V, IOUT , =25°C TJ =25°C VIN =35V, TJ =25°C TEST CONDITIONS TJ =25°C, IOUT=5mA ~ 1.0A VIN =11.5V ~ 24V, IOUT , =18.5V ~ 28.5V,f=120Hz, TJ =25°C 54 TJ =25°C VIN =35V, TJ =25°C TEST CONDITIONS TJ =25°C, IOUT=5mA ~ 1.0A , =5mA ~ 1.0A 10Hzf100kHz IOUT=5mA VIN =22V ~ 32V,f=120Hz, TJ =25°C TJ =25°C VIN =35V, TJ =25°C MIN 17.28 17.10 , 1) For UTC LM7805 (VIN =10V) PARAMETER SYMBOL TEST CONDITIONS MIN TJ =25°C, IOUT=5mA ~ 1.0A 4.80
Unisonic Technologies
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LM7807 REGULATOR IC LM7815 IC LM7808 8V Voltage regulator LM7809 application notes power supply circuit LM7815 ma 1050
Abstract: =35V, TJ =25°C TEST CONDITIONS TJ =25°C, IOUT=5mA - 1.0A VIN =9.5V ~ 22V, IOUT=5mA ~ 1.0A, PDâ , =5mA ~ 1.0A Output Voltage VOUT VIN =7.5V ~ 20V, 4.75 IOUT=5mA ~ 1.0A,PD≤15W Dropout Voltage VD TJ =25°C TJ =25°C,IOUT=5mA ~ 1.0A Load Regulation Î"VOUT TJ =25°C,IOUT=0.25A ~ 0.75A VIN =7V ~ 25V, TJ =25°C Line regulation Î"VOUT VIN =7.5V ~ 20V, TJ =25°C, IOUT=1.0A Quiescent Current IQ TJ =25°C, IOUT≤1.0A VIN =7.5V ~ 20V Quiescent Current Change Î"IQ IOUT=5mA ~ 1.0A Output Noise Unisonic Technologies
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Designs for negative Voltage Regulators

Abstract: Current Change Test Conditions TJ = 25°C VIN = -17V to -35V, TJ = 25°C Power Pkgs: IO = 5mA to 1.0A, TJ = 25°C T - Pkg: IO = 5mA to 500mA, TJ = 25°C VIN = -17.5V to -35V Power Pkgs: IO = 5mA to 1.0A, P , Pkgs: IO = 1.0A, T - Pkg: IO = 500mA Power Pkgs: TJ = 25°C T - Pkg: TJ = 25°C Power Pkgs: VIN = -35V , -23V to -35V, TJ = 25°C Power Pkgs: IO = 5mA to 1.0A, TJ = 25°C T - Pkg: IO = 5mA to 500mA, TJ = 25°C VIN = -24V to -35V Power Pkgs: IO = 5mA to 1.0A, P 20W T - Pkg: IO = 5mA to 500mA, P 2W VIN = -23V
Linfinity Microelectronics
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Designs for negative Voltage Regulators SG120 SG7800A/ SG7800A/7800/120

Package

Abstract: AON5820 Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=10A VSD Diode Forward Voltage , Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 8.5 11 13.5 Qrr Body Diode , configuration. VDS ID (at VGS=4.5V) 20V 10A RDS(ON) (at VGS=4.5V) < 9.5mâ"¦ RDS(ON) (at VGS=4.0V) < 10mâ"¦ RDS(ON) (at VGS=3.5V) < 10.5mâ"¦ RDS(ON) (at VGS=3.1V) < 11.5mâ"¦ RDS(ON) (at VGS , VGS=4.5V, ID=10A 5.5 7.4 9.5 8 11 14 VGS=4.0V, ID=10A 5.8 7.6 10 mâ
Alpha & Omega Semiconductor
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AON5820 Package 1E-05

Diode 400V 5A

Abstract: lm1083 TO18 (TO206AA) VCEO 35V 75V 35V 50V 45V 40V 50V 50V 60V 45V 40V 55V 55V 40V 55V 55V , ) SMM3 TO257AB (TO220M) 45V 40V 40V 40V 70V 36V 36V 36V 64V 64V 64V 35V 45V 500V 60V
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2C444 Diode 400V 5A lm1083 transistor 2n1208 bc109 spice BZY55C IRF9024 2C415 2C425 2C746 2N1131L 2N1132
Abstract: 1.0A, T - Pkg: IO = 500mA Power Pkgs: TJ = 25°C T - Pkg: TJ = 25°C Power Pkgs: VIN = -35V, TJ = , : IO = 5mA to 1.0A, TJ = 25°C T - Pkg: IO = 5mA to 500mA, TJ = 25°C VIN = -17.5V to -35V Power Pkgs: IO = 5mA to 1.0A, P ≤ 20W T - Pkg: IO = 5mA to 500mA, P ≤ 2W VIN = -17V to -35V With Line: VIN = -17V to -35V, TJ = 25°C With Load: TJ = 25°C Power Pkgs: IO = 5mA to 1.0A T - Pkg: IO = 5mA , Conditions TJ = 25°C VIN = -23V to -35V, TJ = 25°C Power Pkgs: IO = 5mA to 1.0A, TJ = 25°C T - Pkg: IO Microsemi
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SG120-XXR/883B SG120-XXR SG120-XXT/883B SG120-XXT SG120-XXIG/883B SG120-XXIG
Abstract: Forward Transconductance VDS=5V, ID=10A VSD Diode Forward Voltage IS=1A,VGS=0V IS A , Recovery Time IF=10A, dI/dt=500A/µs 8.5 11 13.5 Qrr Body Diode Reverse Recovery Charge , configuration. VDS ID (at VGS=4.5V) 20V 10A RDS(ON) (at VGS=4.5V) < 9.5mâ"¦ RDS(ON) (at VGS=4.0V) < 10mâ"¦ RDS(ON) (at VGS=3.5V) < 10.5mâ"¦ RDS(ON) (at VGS=3.1V) < 11.5mâ"¦ RDS(ON) (at VGS , VGS=4.5V, ID=10A 5.5 7.4 9.5 8 11 14 VGS=4.0V, ID=10A 5.8 7.6 10 mâ Alpha & Omega Semiconductor
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SG120

Abstract: SG7800A : IO = 5mA to 1.0A, TJ = 25°C T - Pkg: IO = 5mA to 500mA, TJ = 25°C VIN = -17.5V to -35V Power Pkgs: IO = 5mA to 1.0A, P 20W T - Pkg: IO = 5mA to 500mA, P 2W VIN = -17V to -35V With Line: VIN = -17V to -35V, TJ = 25°C With Load: TJ = 25°C Power Pkgs: IO = 5mA to 1.0A T - Pkg: IO = 5mA to 500mA , 5mA to 1.0A, TJ = 25°C T - Pkg: IO = 5mA to 500mA, TJ = 25°C VIN = -24V to -35V Power Pkgs: IO = 5mA to 1.0A, P 20W T - Pkg: IO = 5mA to 500mA, P 2W VIN = -23V to -35V With Line: VIN = -23V to
Linfinity Microelectronics
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SG7800A capacitor 10mf 35v western Microelectronics 20-PIN SG120-XXL/883B SG120-XXL
Abstract: to 1.0A, P s 20W T - PKg; ^ « SmA to 500mA, P S 2W V)N= -23V to -35V With Une: Vm* -23V to -35V , reference design, problems have been eliminated that are normally associated with the zener diode , -15V -18V -20V Input Voltage -35V -35V -35V -35V -40V -40V -40V Input Voltage Differential (Output shorted to ground) 35V 35V 35V 35V 35V 35V 35V Storage Temperature Range , regulators must be protected from momentary input shorts. A high current diode from output to input will -
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SG120/SG320 SQ120/320 SG7800A/7800/120/320 SG120-XXK/883B SG120-XXK

07N65

Abstract: LN4148 Diode, Schottky, 45V/10A, SBS1045, SOT L1 DM Inductor, 3mH, Dr L2 DM Inductor, 3µH, R5 , BD1 Bridge Rectifier,D1010S,1000V/1.0A,SDIP Diode, Ultra Fast, LL4148, SMD ,75V/0.2A, Diode , ,D1010S,1000V/1.0A,SDIP PANJIT Zener diode 1/2W 6.8V,SMD PANJIT Fast Recovery Rectifier, RS1G,200V/1.0A, RMA D3 Diode, Schottky, 40V/30A, SBR3040, TO220 D4 Fast Recovery Rectifier, RS1M,1000V/1.0A, RMA D5 Diode, Ultra Fast, LL4148, SMD L1 Axial Inductor, 1.5mH, 5*7,Dip
Active-Semi
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07N65 LN4148 fusible 1a SMD 10471 VARISTOR ACT51X 2012-O ACT512 ACT510 ACT511 SC053

sd2t

Abstract: source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel , down) MH1 MH2 ML - - - - - - - Vi = 8V, V os = 0 Vi = 3.5V, V D S=0 Vi = 1.2V, V D S=0 Vi , 0.35 175 mA mA °C 8V, V os = 0 3.5V, V D S= 0 Channel temperature HITACHI 655 , - = 3.5V, Vos = 2V VQ S = 1.2V, Vos = 2V lD = 10mA, V Q S=0 VGS lG - - - - - - 100 , gs = 8V, V ds= 0 VG S = 3.5V, VD S=0 VG S = 1.2V, VD S= 0 V qs = -2.4V, V D S= 0 VG S = 8 V ,V D S= 0
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sd2t HAF2002 ADE-208-503 F2002 HAF2001

Hitachi DSA002732

Abstract: voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation , - - - Unit V V µA µA µA mA mA °C Vi = 8V, VDS = 0 Vi = 3.5V, VDS = 0 Vi = 1.2V, VDS = 0 Vi = 8V, VDS = 0 Vi = 3.5V, VDS = 0 Channel temperature Test Conditions 2 HAF2002 Electrical , µs µs µs µs V ns IF = 20A, VGS = 0 IF = 20A, VGS = 0 diF/ dt =50A/µs Test Conditions VGS = 3.5V, VDS , = 0 VGS = 3.5V, VDS = 0 VGS = 1.2V, VDS = 0 VGS = ­2.4V, VDS = 0 VGS = 8V, VDS = 0 VGS = 3.5V, VDS =
Hitachi Semiconductor
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Hitachi DSA002732

Hitachi DSA002759

Abstract: 3.5V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1mA, VDS = 10V ID = 10A, VGS = 4V * 1 I D = 10A, VGS = 10V * 1 , voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation , 100 50 1 - - - Unit V V µA µA µA mA mA °C Vi = 8V, VDS = 0 Vi = 3.5V, VDS = 0 Vi = 1.2V, VDS = 0 Vi = 8V, VDS = 0 Vi = 3.5V, VDS = 0 Channel temperature Test Conditions 2 HAF2002 Electrical , = 3.5V, VDS = 2V VGS = 1.2V, VDS = 2V I D = 10mA, VGS = 0 I G = 100µA, VDS = 0 I G = ­100µA, VDS = 0
Hitachi
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Hitachi DSA002759

negative regulator

Abstract: 25 30 10 80 40 mV mV V Vw - -17.5V to -35V Power Pkgs: l0 = 5mA to 1.0A, P < 20W , .QA, T , - 25°C T - Pkg: lQ= 5mA to 500mA, T j = 25°C VK -2 4 V to-35V Power Pkgs: l0 = 5mA to 1.0A, P , With Une: V , - -23V to-35V, T j« 2 5 °C With Load: T, = 25°C Power Pkgs: lQ « 5mA to 1.0A T - Pkg , design, problems have been eliminated that are normally associated with the zener diode refer ences, such , NEGATIVE REGULATOR Input Voltage -35V -35V -35V -35V -40V -40V -40V . 150°C Input Voltage Differential
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negative regulator SG120/320 10OKH SG320-XXK SG320-XXR SG120-XXG/883B SG120-XXG
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