NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 10A05 10A05 10A10 10A10 WTE POWER SEMICONDUCTORS Pb 10A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge , Output Current (Note 1) @TA = 50°C 10A2 10A4 10A6 10A8 10A10 10A10 Unit 50 100 200 , 10A05 10A05 - 10A4 100 10A6 - 10A10 10A10 10 200 8.3ms Single Half Sine-Wave JEDEC Method 1.0 0 , Units/Box 10A6-T3 P-600 P-600 800/Tape & Reel 10A6 P-600 P-600 250 Units/Box 10A8-T3 10A8-T3 P-600 P-600 ... | Original |
4 pages, |
RS-296-E 10A1 10A2 10A6 10A8 10A05 10A4 10A10 diode p600 P600 P600 diode 10A4 diode p diode 10A10 diode 10A6 10A4 diode 10A05 abstract |
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| Abstract: , CB35 5 CB30 1 DB01 1 1A 40V Schottky diode DS01, DS02, DS05 3 Red LEDs, SMD , PT15B PT15B PT15A PT15A PT16A/VREF2 PT16A/VREF2_0 106 PR7A 105 PR7B PR8A 104 ALE_DUT 103 WR_DUT 10A6 10B2> 1B5^ PR8B 102 RD_DUT 10A6 10B2> 1B5^ PR9A/PCLKT2_0 20 4 21 C , 132 131 130 129 127 PT10A PT10A 7D7< 3 4 7B7 6 6D7 7B4 7 8 10A6 10A6 7 6 5 4 3 2 1 0 10B2> 10B2> A_DUT_ 10B2> 10B2> 10B2> 1B5^ ... | Original |
18 pages, |
CB10 capacitor 1c5 6B5 SOT23 6A4 SMD 5B4 RECTIFIER diode 6a6 diode cb23 DS26521 smd 1B5 RB45 rb48 rj48 to db9 RJ48 11C4 DS26521DK DS26521DK DS26521DK abstract |
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| Abstract: count of each part. MTBF= - X equip 1 = - x 10A6(Hours) S NÌ(X,g 7lo)i Where: X equip = Total Equipment Failure Rate (Failures /10A6 Hours) Xg = Generic Failure Rate For The ith Generic Part (Failure/10A6 Hours , Mounting Q101 MOSFET 21.2 Q104 MOSFET 17.4 Q205 MOSFET 28.7 D101 BRIDGE 26.8 D104 DIODE 9.6 D107 DIODE 7.8 D110 DIODE 24.9 T101 TRANSFORMER 32.5 T201 TRANSFORMER 11.6 C114 ELEC.CAP. 4 C145 ELEC.CAP. 15.4 L102 , D101 BRIDGE 13.5 D104 DIODE 2 D107 DIODE 5.9 D110 DIODE 24.9 T101 TRANSFORMER 28.7 T201 TRANSFORMER 5.9 ... | OCR Scan |
33 pages, |
ZUP-200 PC201 PC201-DET t201 transformer uc3854dw UPC7805AHF diode d229 d1fl20u ac dc m51995afp 2SK1937 1A548-79-01 R-2-12 ZUP-200 abstract |
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| Abstract: and M.T.B.F. is calculated by the count of each part. MTBF= - X equip 1 = - x 10A6(Hours) S NÌ(X,g 7lo)i Where: X equip = Total Equipment Failure Rate (Failures /10A6 Hours) Xg = Generic Failure Rate For The ith Generic Part (Failure/10A6 Hours) Ni = Quantity of ith Generic Part n = Number of , D104 DIODE 9.6 D107 DIODE 7.8 D110 DIODE 24.9 T101 TRANSFORMER 32.5 T201 TRANSFORMER 11.6 C114 , Mounting Q101 MOSFET 4 Q104 MOSFET 17.4 Q205 MOSFET 24.9 D101 BRIDGE 13.5 D104 DIODE 2 D107 DIODE 5.9 ... | OCR Scan |
33 pages, |
ZUP-200 Nemic-Lambda CN MIP0224SY M51995AFP d1fl20u 1A548-79-01 R-2-12 ZUP-200 abstract |
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| Abstract: 16V 20% SCHOTTKY DIODE, 1 AMP 40 VOLT L_LED, GREEN, SMD L_LED, RED, SMD LED, GREEN/GREEN, SMD , 10A2 10A6 10C7 10D7 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 , A14 A15 A16 9D3 BOOT INTERN 9A2 W/ PLL XTAL 10A6 10A2 10A2 10A2 , DRIVE FULL MASTER MODE 10A2 10A6 1 N_C A6 6 11 A5 7 12 D IO0 ... | Original |
28 pages, |
rpack 10k 4C3 diode 2B5 bridge rectifier 12C5v RPB11 RPB17 smd 5c3 RP02 smd diode M4 HFJ11-1G02E EXB-V8V103JX DP83865DVH SFP ACTIVE COPPER CABLE 6A8 DIODE SMD DS33M30 DS33M30 DS33M30 abstract |
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| Abstract: count of each part. 1 MTBF= - X equip 1 = - x 10A6(Hours) £ Ni(A,G7ta)i Where: X equip = Total Equipment Failure Rate (Failures /10A6 Hours) Xg = Generic Failure Rate For The ith Generic Part (Failure/10A6 Hours) Ni = Quantity of ith Generic Part n = Number of Different Generic Part Categories 7Iq = , Mounting Q102 MOSFET 24.9 Q103 MOSFET 24.1 Q205 MOSFET 28.7 D101 BRIDGE 43.4 D104 DIODE 11.6 D107 DIODE 19.4 D108 DIODE 42.8 T101 TRANSFORMER 54.4 T201 TRANSFORMER 11.6 C114 ELEC.CAP. 5.9 C153 ELEC.CAP. 24.6 ... | OCR Scan |
35 pages, |
10A6 zd106 R-33 2SA1162Y M5199 2SK2611 fuse 9 BJE 41 d1fl20u ac dc m51995afp ZUP-400 fuse 9 BJE 69 MIP0224 JA549-79-01 R-2-12 ZUP-400 abstract |
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| Abstract: and M.T.B.F. is calculated by the count of each part. 1 MTBF= - X equip 1 = - x 10A6(Hours) £ Ni(A,G7ta)i Where: X equip = Total Equipment Failure Rate (Failures /10A6 Hours) Xg = Generic Failure Rate For The ith Generic Part (Failure/10A6 Hours) Ni = Quantity of ith Generic Part n = Number , Mounting Q102 MOSFET 24.9 Q103 MOSFET 24.1 Q205 MOSFET 28.7 D101 BRIDGE 43.4 D104 DIODE 11.6 D107 DIODE 19.4 D108 DIODE 42.8 T101 TRANSFORMER 54.4 T201 TRANSFORMER 11.6 C114 ELEC.CAP. 5.9 C153 ... | OCR Scan |
35 pages, |
ZUP-400 R-33 mip0224 mip0 d1fl20u ac dc m51995afp 10A6 JA549-79-01 R-2-12 ZUP-400 abstract |
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| Abstract: TSIZ0 B AP3 AP2 AP1 AP0 TT TSIZ BI 10A6 BI 10A6 BI 9A7 , 0603 * 4 5% ZENER-BASE CR1 1 Motorola 1N4678 1N4678 DO35 DIODE ZENER 500 Milliwatts ... | Original |
19 pages, |
zener 6c3 1B5 zener diode RISCwatch zener 2B8 4c2 zener diode 2A3 zener diode 4b2 zener diode fet B20 p03 256-pin BGA drawing dh06 zener 2B1 5a2 zener diode zener DIODE 5c2 750CX 750CX 750CX abstract |
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| Abstract: BI185 * 8 109 AP3 AP2 AP1 AP0 TT BI 10A6 TSIZ BI 10A6 BI , DIODE ZENER 500 Milliwatts Total 22 Application Note PowerPC Embedded Processors Design and ... | Original |
19 pages, |
rpack 10k 256-pin BGA drawing zener 6c3 zener DIODE 5c2 2A3 zener diode 6c3 zener diode 1B5 zener diode 4b2 zener diode IBM powerpc 750l zener 2a7 ZENER 1B9 ZENER 5V2 zener 11B2 750CX 750CX abstract |
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| Abstract: otherwise noted. 2. There is no input protection diode from pin to VDD. 3. Excludes XTAL pins. 4. Device , point. There is no High side protection diode. The user should place an external diode from RESET to Vcc. , is illustrated as follows: 5.83 (10A6) = - 271 [2.7 (10-6) CT] 1/2 CT = 27.6 pf Thus Cj = 55.2 , registers is affected by either of these events. INPUT PROTECTION All I/O pins on the Z8E000 Z8E000 have diode input protection. However, on the Z8E000 Z8E000, the RESET pin has only the input There is a diode from the I/O ... | OCR Scan |
45 pages, |
Z8E00010SSC Z8E00010PSC Z8E00010PEC Z8E00010HSC Z8E000 Z8 ITT DC-10 10A6 Z8E000 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| 10 A 6 A 1/9 THERMAL DATA TO-220 TO220FP R thj-case Thermal Resistance Junction tot Total Dissipation at T c = 25 o C 85 30 W Derating Factor 0.68 0.24 W/ o C dv/dt( 1 ) Peak Diode = 4.7 W V GS = 10 V (see test circuit, figure 5) 8 10 20 11 14 28 ns ns ns SOURCE DRAIN DIODE Symbol Temperature Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs : Test Circuit For Inductive Load Switching And Diode Recovery Times STP10NB20/FP STP10NB20/FP STP10NB20/FP STP10NB20/FP 6/9 DIM. mm inch MIN www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5346-v1.htm |
STMicroelectronics | 02/04/1999 | 8.37 Kb | HTM | 5346-v1.htm |
| 10 A 6 A 1/9 THERMAL DATA TO-220 TO220FP R thj-case Thermal Resistance Junction tot Total Dissipation at T c = 25 o C 85 30 W Derating Factor 0.68 0.24 W/ o C dv/dt( 1 ) Peak Diode = 4.7 W V GS = 10 V (see test circuit, figure 5) 8 10 20 11 14 28 ns ns ns SOURCE DRAIN DIODE Symbol Temperature Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs : Test Circuit For Inductive Load Switching And Diode Recovery Times STP10NB20/FP STP10NB20/FP STP10NB20/FP STP10NB20/FP 6/9 DIM. mm inch MIN www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5346-v2.htm |
STMicroelectronics | 14/06/1999 | 8.33 Kb | HTM | 5346-v2.htm |
| Conditions Min. Typ. Max. Unit g fs ( * ) Forward Transconductance V DS > I D(on) x R DS(on)max I D =10 A 6 /dt( 1 ) Peak Diode Recovery voltage slope 7 V/ns T stg Storage Temperature -65 to 175 o C T j Max DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit I SD I SDM ( w ) Source-drain Current Source /8 Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STP20NE10 STP20NE10 STP20NE10 STP20NE10 6/8 DIM. mm www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6050-v1.htm |
STMicroelectronics | 02/04/1999 | 7.44 Kb | HTM | 6050-v1.htm |
| Conditions Min. Typ. Max. Unit g fs ( * ) Forward Transconductance V DS > I D(on) x R DS(on)max I D =10 A 6 /dt( 1 ) Peak Diode Recovery voltage slope 7 V/ns T stg Storage Temperature -65 to 175 o C T j Max DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit I SD I SDM ( w ) Source-drain Current Source /8 Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STP20NE10 STP20NE10 STP20NE10 STP20NE10 6/8 DIM. mm www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6050-v2.htm |
STMicroelectronics | 14/06/1999 | 7.4 Kb | HTM | 6050-v2.htm |
| DS(on) I D STP10NB20 STP10NB20 STP10NB20 STP10NB20 STP10NB20FP STP10NB20FP STP10NB20FP STP10NB20FP 200 V 200 V < 0.40 W < 0.40 W 10 A 6 A 1 = 25 o C 85 30 W Derating Factor 0.68 0.24 W/ o C dv/dt( 1 ) Peak Diode Recovery circuit, figure 5) 8 10 20 11 14 28 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Capacitance Switching And Diode Recovery Times STP10NB20/FP STP10NB20/FP STP10NB20/FP STP10NB20/FP 6/9 DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5346-v3.htm |
STMicroelectronics | 25/05/2000 | 10.21 Kb | HTM | 5346-v3.htm |
| (on) I D STP10NB20 STP10NB20 STP10NB20 STP10NB20 STP10NB20FP STP10NB20FP STP10NB20FP STP10NB20FP 200 V 200 V < 0.40 W < 0.40 W 10 A 6 A 1/9 THERMAL DATA /dt( 1 ) Peak Diode Recovery voltage slope 5.5 5.5 V/ns V ISO Insulation Withstand Voltage (DC) 2000 14 28 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit I SD Temperature Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs . 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STP10NB20/FP STP10NB20/FP STP10NB20/FP STP10NB20/FP 6/9 DIM www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5346.htm |
STMicroelectronics | 20/10/2000 | 10.87 Kb | HTM | 5346.htm |
| ( * ) Forward Transconductance V DS > I D(on) x R DS(on)max I D =10 A 6 S C iss C oss C rss ) Peak Diode Recovery voltage slope 7 V/ns T stg Storage Temperature -65 to 175 o C T j Max , figure 5) 11 18 32 15 25 44 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min Capacitance Variations STP20NE10 STP20NE10 STP20NE10 STP20NE10 4/8 Normalized Gate Threshold Voltage vs Temperature Source-drain Diode And Diode Recovery Times STP20NE10 STP20NE10 STP20NE10 STP20NE10 6/8 DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 4.40 4 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6050.htm |
STMicroelectronics | 20/10/2000 | 9.86 Kb | HTM | 6050.htm |
| ( * ) Forward Transconductance V DS > I D(on) x R DS(on)max I D =10 A 6 S C iss C W Derating Factor 0.6 W/ o C dv/dt( 1 ) Peak Diode Recovery voltage slope 7 V/ns T , figure 5) 11 18 32 15 25 44 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test 10 4/8 Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Switching And Diode Recovery Times STP20NE10 STP20NE10 STP20NE10 STP20NE10 6/8 DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6050-v3.htm |
STMicroelectronics | 25/05/2000 | 9.26 Kb | HTM | 6050-v3.htm |
| Transconductance V DS > I D(on) x R DS(on)max I D = 10 A 6 9 S C iss C oss C rss Input Capacitance DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit I SD I SDM ( w ) Source Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics STP20N06 STP20N06 STP20N06 STP20N06 Diode Reverse Recovery Time Fig. 1: Unclamped Inductive Load Test Circuits STP20N06/FI STP20N06/FI STP20N06/FI STP20N06/FI 7/10 DIM www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3133.htm |
STMicroelectronics | 20/10/2000 | 11.02 Kb | HTM | 3133.htm |
| ( * ) Forward Transconductance V DS > I D(on) x R DS(on)max I D = 10 A 6 9 S C iss C oss C rss Input = 50 W V GS = 10 V (see test circuit, figure 5) 80 60 140 120 90 210 ns ns ns SOURCE DRAIN DIODE -source Voltage Slope Cross-over Time Switching Safe Operating Area Accidental Overload Area Source-drain Diode Load Switching And Diode Reverse Recovery Time Fig. 1: Unclamped Inductive Load Test Circuits STP20N06 STP20N06 STP20N06 STP20N06 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3133-v2.htm |
STMicroelectronics | 14/06/1999 | 8.55 Kb | HTM | 3133-v2.htm |