BF1206,115 datasheet
-
NXP Semiconductors
-
Dual N-channel dual-gate MOS-FET - CIS TYP: 2.41.7 pF; COS: 1.10.85 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 14 to 23 & 9 to 17 mA; Noise figure: 1.6@800MHz & 1.4@800MHz dB; Note: Two low noise gain amplifiers in one package ; -V(P)GS MAX: 1 V; V<sub>DS</sub>max: 6 V; Y<sub>FS</sub> min.: 3329 mS; Package: SOT363 (SC-88); Container: Tape reel smd
-
Original
-
Part pricing, stock, data attributes from Findchips.com
Findchips