2N7002,215 datasheet
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NXP Semiconductors
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N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
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Original
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