BFG424F,115 datasheet
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NXP Semiconductors
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NPN 25 GHz wideband transistor - @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 25 mA; f<sub>T</sub>: 25 GHz; Gain @ 1.9 GHz: 23@f2 dB; I<sub>C</sub>: 30 mA; ITO: 22 dBm; Noise figure: 0.8@f1 dB; P<sub>L</sub>: 12 W; P<sub>tot</sub>: 135 mW; Polarity: NPN ; Power gain: 23 dB; V<sub>CE</sub>:; Package: SOT343N (SO4); Container: Tape reel smd
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Original
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