PMBFJ174,215 datasheet
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NXP Semiconductors
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P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; I<sub>DSS</sub>: 20 to 135 mA; I<sub>DSS</sub> max.: 135 mA; I<sub>DSS</sub> min.: 20 mA; I<sub>G</sub>: 50 mA; IG: 50 ; R<sub>DS(on)</sub>: 85 Ohm; t<sub>off</sub>: 15 ns; t<sub>off</sub>: 15 ns; t<sub>on</sub>: 7 ns; t<sub>on</sub>: 7 ns; -V(P)GS: 5 to 10 V; -V(P)GS MAX: 10 V; -V(P)GS MIN: 5 V; V<sub>DS</sub>max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
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Original
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