PMV40UN,215 datasheet
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NXP Semiconductors
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TrenchMOS ultra low level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 4.9 A; Q<sub>gd</sub> (typ): 2.2 nC; R<sub>DS(on)</sub>: 47@4.5V53@2.5V73@1.8V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
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Original
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