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HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HS9-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16 visit Intersil

d 317 transistor

Catalog Datasheet MFG & Type PDF Document Tags

8060 transistor

Abstract: 104 csk 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series 8060-1G11 , 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series PART NUMBER , B C D E* F Max. M8058-45G1 1 3 .200 .200 .265 .373 .410 .160 , -1G23 Transistor Lead Length Turret M8058-1G29 Mounting Hole Printed Circuit B _ .125/.155 , .410 .347 .550 8058-1G24 4 4 .200 .200 .270 .373 .410 .317 .550
Tyco Electronics
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8060-1G6 8060 transistor 104 csk 8060-1G12 M8058-1G18 d 317 transistor MIL-S-83502/2 MIL-S-83502/5

transistor 373

Abstract: 8060 transistor Catalog 1307612 J & IV IF * Specialty Sockets Revised 7-01 Transistor Sockets 8058 & , Sockets Revised 7-01 Transistor Sockets 8058 & 8060 Series PART NUMBER / STANDARD CONFIGURATIONS Part Number Terminal Style Figure No. of Contacts Pin Circle A B C D E , .410 .315 .1567.218 N/A Polarization Figure N .544 M8058-1G23 Transistor Lead , .550 8058-1G24 4 4 .200 .200 .270 .373 .410 .317 .550 Printed Circuit
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transistor 373 M1L-S-83502/5 M1L-S-83502/

d 317 transistor

Abstract: ti 317 < 10 E 55/150/56 BSP 317 Unit °C K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 , 09.96 SIEMENS Power dissipation Drain current ' d = /(7 a) parameter: VQ S > -10 V BSP 317 s , characteristics lü = f W ds) BSP 317 Typ. drain-source on-resistance 'DS (on) = / ( /D) parameter , , /D = -1 mA BSP 317 ñ DS (on) = f i 1j) ^G S (th ) = /(7 j) -60 -20 20 60 100 , Drain-source breakdown voltage V '( B R ) D S S = / ( 7 j) BSP 317 Safe operating area lo=HVos
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ti 317 Q67000-S94 E6327 GPS05560

d 317 transistor

Abstract: E6327 BSP 317 SIPMOS ® Small-Signal Transistor · P channel · Enhancement mode · Logic Level · VGS(th) = -0.8.-2.0 V Pin 1 G Type VDS ID RDS(on) Package BSP 317 -200 V -0.37 A 6 Ordering Code Q67000-S94 D Pin 3 Pin 4 S D SOT-223 Type BSP 317 , Group Unit W 1.8 1 Sep-12-1996 BSP 317 Maximum Ratings Parameter Symbol , IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5
Siemens
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d 317 transistor

Abstract: t 317 transistor SIPMOS® Small-Signal Transistor BSP 317 q VDS - 200 V q ID - 0.37 A q RDS(on) 6 q VGS , and Reel Information BSP 317 Q67000-S094 Pin Configuration 1 E6327: 1000 pcs/reel 2 3 D S D Package 4 G Marking BSP 317 SOT-223 Maximum Ratings Parameter , chip-soldering point Transistor on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for drain connection. Semiconductor Group 221 10.94 BSP 317 Electrical Characteristics at Tj = 25 °C
Siemens
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t 317 transistor 317 6 pin information 148 diode tc 317 c

d 317 transistor

Abstract: E6327 BSP 317 SIPMOS ® Small-Signal Transistor · P channel · Enhancement mode · Logic Level · VGS(th) = -0.8.-2.0 V Pin 1 G Type VDS ID RDS(on) Package BSP 317 -200 V -0.37 A 6 Ordering Code Q67000-S94 D Pin 3 Pin 4 S D SOT-223 Type BSP 317 , Data Sheet Unit 1.8 1 05.99 BSP 317 Maximum Ratings Parameter Symbol Chip or , , DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper
Infineon Technologies
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GT3D-4EAF20

Abstract: START SWITCH idec ) 317-IDEC Timers GT3A Series Part Number List Part Numbers: GT3A-1, -2, -3 Mode Of , B: Interval 1 C: Cycle 1 D: Cycle 3 AF20: 100 to 240V AC (50/60Hz) D12: 12V DC AD24: 24V AC , Operation Rated Voltage Code A: ON-Delay 2 B: Cycle 2 C: Signal ON/OFF-Delay 1 D: Signal OFF-Delay , : One-Shot ON-Delay C: One-Shot 2 D: Signal ON/OFF-Delay 3 4. 5. 6. 7. 8. Output Contact , -4AF20 GT3A-6EAD24 G Timers A: Interval 2 B: One-Shot Cycle C: Signal ON/OFF-Delay 2 D: Signal
IDEC
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GT3D-4EAF20 START SWITCH idec GT3A-2EAF20 star delta using NO NC GT3D-4AD24 series 511 spdt relay 12v dc E55996 50/60H AC/250V AC/21 12VDC/1W 262-IDEC
Abstract: BSP 317 SIPMOS ® Small-Signal Transistor â'¢ P channel â'¢ Enhancement mode â'¢ Logic Level â'¢ VGS(th) = -0.8.-2.0 V Pin 1 G Type VDS ID RDS(on) Package BSP 317 -200 V -0.37 A 6â"¦ Ordering Code Q67000-S94 D Pin 3 Pin 4 S D SOT-223 Type BSP 317 Pin 2 Marking Tape and Reel Information E6327 Maximum Ratings Parameter , W Ptot TA = 25 ˚C Data Sheet Unit 1.8 1 05.99 BSP 317 Maximum Ratings Infineon Technologies
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smd transistor m7

Abstract: BSP 317 Infineon (â'¢eh n o l o g I«s SIPMOS ® Small-Signal Transistor â'¢ P channel â'¢ Enhancement mode â'¢ Logic Level â'¢ ^GS(th) = "0.8.-2.0 V ffDS(on) V) sP Type BSP 317 -200 V Type BSP 317 Ordering Code Q67000-S94 -0.37 A Package 6O Marking SOT , category, DIN IEC 68-1 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for , VGS = 0 V, /D = -0.25 mA, 7] = 25 "C Gate threshold voltage V ^(BR)DSS . -200 ^GS(th
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smd transistor m7 P-T0220-3-1 P-T0252-3-1 G13377 P-T0263-3-2/D2PAK Q133777 SQT-89

transistor Kd 505

Abstract: k534 LTR O CD) A D - SEE Transistor Sockets 8058 & 8060 Series PART NUMBER , TH IS DRAW ING IS A C O N TR O LLE D DO C U M EN T. REVISIONS T ^ st -DATE d e s c r ip t io n DWN APVD p 0 0 L ECO - 28N0V2006 05 - 0 Ö9 , L' D · Two-piece socket terminal - four fingered inner contact and machined outer sleeve · Low , MIL-STD -1344, Method 1003 I lo ThomasêBetts Q u a lity & in n o vatio n Fro m N a m e B ra n d Pro
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transistor Kd 505 k534 TRANSISTOR D410 transistor DA 218 b058 805S-IG32 MIL-S-S3502/2 MIL-S-83502/

ULN2003NA

Abstract: transistor af 178 x x M P x x x x TD62C x x x TB 62 x x x Transistor Array Line Up Item Bipolar Transistor Array DM O S Transistor Array Multi-Chip Transistor Array Total Series 40 1 7 48 Device 226 18 20 263 Array , Module IC T y p e [(M CT Type - - [Tjn t e II i g e n t [ d , 305 311 305 311 317 317 317 317 321 321 340 321 332 336 340 321 Device Number TD62504P-H TD62504PA , Low Saturation H-Bridge Drivers 3ch Low Saturation PNP Transistor Array 3ch Low Saturation PNP
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ULN2003NA transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN TD62M TD/TB62 TD62082AP/CP/F/AF TD62083AP/CP/F/AF TD62083APA TD62083AFN

TSD40N50DV

Abstract: aval RüS(on) 0.12 £2 Id 40 A TY P E TS D 40N 50D F/D V V dss 500 V . POWER MOS TRANSISTOR MODULE , . max 31.7 8.2 4.3 15.1 30.3 38.2 12.2 9.1 12.8 25.4 2.05 A B C D E F G H L M N P Q 31.5 7.8 4.1 14.9 , B Q E D m 7e ia,i237_Qa3as'-iti ? SGS-THOMSON üLiO TTiO iöO i s g TSD40N50DF , Id Id Idm (*) Plot P a ra m e te r D rain-S ource V oltage (V qs = 0) D rain-G ate V oltage (R gs = 20 k n ) G ate-S ource V oltage D rain C urrent (co ntinuo us) at T c = 25 °C Drain C urrent
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TSD40N50DV aval SC04S9Q PC-029

RCA-41024

Abstract: rca 0190 transistor S turns. No. 28 wire. 0.125 in ¡3.17 mm) dia. x 0.5 in. (12.7 mm) long R: 0-50 ohms Transistor , Transistor High-Gain Device for Class B- or Cooperation in UHF Circuits Features: â  1-watt output min , -41024 is an epitaxial silicon n-p-n planar transistor of the overlay-emitter-electrode construction. It is , A TRANSISTOR DISSIPATION: PT At case temperatures up to 25 , , 0.125 in. (3.17 mm) ID, No. 26 wire 0.300 in. (7.62 mml 0.25 in. (6.35 mm) Or equivalent Fig. 5- RF
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RCA-41024 rca 0190 transistor 41024 4-1024 RF NPN POWER TRANSISTOR 2 WATT 2 GHZ transistor C4 016 92LS-1845R2 68-GH

transistor c1237

Abstract: TSD250N05V DIMENSIONS mm min. A B C D E F G H L M N 31.5 6,2 0.75 14.9 30.1 38 4 20.3 8.9 22.4 25.2 1.95 4 max 31.7 6.4 , TRANSISTOR MODULE TENTATIVE DATA RDS(on) Id TYPE TSD250N05F/V V dss 50 V 0.004 n 250 A , M 1 i SC04 S90 Jt e l ` ABSOLUTE MAXIMUM RATINGS Sym bol V ds V dqr V gs Id Id I d , width limited by safe operating area July 1990 3QE » 7C J2E J 23 7 D Q 3 G 7Ö 0 , TRANSISTOR pin 2: Base pin 4: Emitter sensing Torque: Mounting 1.3 ± 0.2 N · m (max) Weight: Package 25.5
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TSD250N05V transistor c1237 Q03QL TSD250N05F
Abstract: 3 DE D 7^2^237 003QSC 12 T ' F I 6 s S C S TH O M S O N ¡[LBgïïËMDes - , MODE POWER MOS TRANSISTOR MODULE TENTATIVE DATA RDS(on) Id 1000 V 0.5 n 20 A . . . , MAXIMUM RATINGS Sym bol V ds V dgr V gs Id Id I d m (*) Parameter Drain-Source Voltage (V gs = 0 , J2E J237 D Q 3 G 7 Ö 0 ä PACKAGES T T h ISOTOP Fast-on version sales types with the suffix F MECHANICAL DATA DIMENSIONS mm min. A B C D E F G H L M N 31.5 6,2 0.75 14.9 30.1 38 4 20.3 -
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TSD20N1 TSD20N100V TSD20N100F/V

LU380A

Abstract: full subtractor circuit using nand gates .2 305,306 .3 333, 314, 317, 370 and , Measured at 50% points FAN-IN EXPANSION OF 317 33 See text under "NOR GATES" 321,322 CHARACTERISTIC , , 314, 317, 370 and 380 CHARACTERISTIC MEASUREMENT MIN. TYP. MAX. UNITS CONDITIONS NOISE IMMUNITY , (314,317,370, 380) VoUT 3.8 V Iqut = -2 mA, V,N = +1.4V (333 only) VOUT 3.8 V Iout=-2 mA, V|N = +2.7V "0" OUTPUT VOLTAGE (314,317,370,380) VoUT 0.6 V IQUT = 12.5 mA,V,N=+2.7V (333 only) VoUT â
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LU380A full subtractor circuit using nand gates LU370A LU321A LU322B full subtractor circuit using nor gates EC-12

schematic diagram UPS

Abstract: TSD180N10V 3QE D â  TTSTSa? OGBQS^â â¡ â  SGS-THOMSON TSD180N1 OF LlimrifS©«! TSD180N1OV S-THOMSON N . CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR MODULE TENTATIVE DATA TYPE Vdss RdS(oii) Id , : Basel pin 4: Base 2 TRANSISTOR pin 1: Emitter pin 2: Base pin 3: Collector pin 4: Emitter sensing , for the 3 pin version (4th pin missing) DIMENSIONS mm Inches min. max min. max A 31.5 31.7 1.240 1.248 B 6.2 6.4 0.244 0.252 C 0.75 0.85 0.029 0.033 D 14.9 15.1 0.586 0.590 E 30.1 30.3 1.185
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schematic diagram UPS TSD180N10V smps&ups TSD180N10F k 815 MOSFET TSD180N10F/V C045S0 7CJ2EJ237 T-91-20

NPN Transistor 10A 24V

Abstract: 120v in 24v 10A OUT power converter software or cables required. USA: (800) 262-IDEC or (408) 747-0550, Canada: (888) 317-IDEC IDEC , Transistor Source Output Yes - Relay Output Yes PNP Expansion Module Part Number Part No , Signal DC input Relay output 8 (4 in/4 out) 24V DC DC input Transistor output 8 (4 , www.idec.com USA: (800) 262-IDEC or (408) 747-0550, Canada: (888) 317-IDEC H-3 IDEC SmartRelay , (Example) Shift Down USA: (800) 262-IDEC or (408) 747-0550, Canada: (888) 317-IDEC IDEC
IDEC
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NPN Transistor 10A 24V 120v in 24v 10A OUT power converter IDEC FL1C-B12RCE IEC60068-2-30 317-IDEC 95/98/ME/NT/2000/XP 266MH 128MB

2N5090

Abstract: ta7146 File No. 270 - DGGB//D RF Power Transistors Solid State Division 2N5090 High-Power Silicon N-P-N Overlay Transistor High-Gain Type for Class A, B, or C Operation in VHF/UHF Circuits Features , from stud RCA-2N5090* is an epitaxial silicon n-p-n planar transistor employing the RCA-developed , . IC 0.4 A ♦continuous base current_ lb 0.4 a ♦transistor dissipation . pt At case , mm) ID, 1/8 in. (3.17 mm) long L2: 3 turns No.16 wire, % in. (6.35 mm) ID, 3/8 in. (9.52 mm) long
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ta7146 equivalent transistor n 4212 RCA TO60 TRANSISTORS 3431J 9ZSS-3620R2 RCA 813 TA7146 92CS-15IS7R2 92CS-I80I9

XC6382F501MR

Abstract: XC6382 switching transistor D Stand-by capability. (5-pin) External switching transistor E Separated , (accuracy: ±15%) Every built-in switching transistor type enables a step-up circuit to be configured using only three external components ; a coil, a diode, and a capacitor. External transistor versions are , ~10V Both built-in and external transistor types include 5-pin and 3-pin packages, which are , ratio : 75%(±5%) Both switching transistor built-in and external types are available. Five-lead
Torex Semiconductor
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XC6382 XC6382F XC6382F501MR XC6382A XC6382B XC6382C XC6382D 2SC3279 2SD1628G XC6382A301 XC6382A501
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