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Abstract: ABSTRACT Cree introduced its ZERO RECOVERY® line of SiC power rectifiers four years ago into mainstream , performance in the field. This paper explains why Cree SiC products are expected to be inherently reliable, discusses Cree's approach to reliability assessment, and presents the expected lifetime of SiC power , Summary VC CPWR-RS03 CPWR-RS03, RE - October 2008 r Diode Reliability SiC Powe Cree's 600-V family of , /power. For warranty information please contact Cree Sales at PowerSales@cree.com. SiC ... Original
datasheet

4 pages,
252.75 Kb

CSD10060 CSD06060 CSD04060 155C schottky diode FIT cree Sic datasheet abstract
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Abstract: ABSTRACT Cree introduced its ZERO RECOVERY® line of SiC power rectifiers three years ago into mainstream , performance in the field. This paper explains why Cree SiC products are expected to be inherently reliable, discusses Cree's approach to reliability assessment, and presents the expected lifetime of SiC power diodes under various operational and environmental conditions. SiC Schottky Diode Reliability Cree , warranty information please contact Cree Sales at PowerSales@cree.com. SiC SchottkyDiode ... Original
datasheet

4 pages,
228.55 Kb

schottky diode FIT CSD10060A cree Sic 155C CSD06060A datasheet abstract
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Abstract: paper were not Cree devices the failures have led to questions about the dV/dt performance of SiC , 20 Cree SiC ZERO ® RECOVERY Schottky diodes were tested at a voltage slew rate greater than , method approximating a SMPS application. There were no failures of the Cree SiC ZERO RECOVERY , Reliability Study SiC ZERO RECOVERY® Schottky Diode Reliability at Extremely High Voltage Slew Rates Summary Testing was performed to determine if a failure mechanism was present in the Cree ... Original
datasheet

3 pages,
158.04 Kb

300 Amp mosfet 15 amp diodes 20 amp diode recovery diodes 5 ns 10 amp diode 4 amp diode 5.5 volt 1.5 amp. smps POWER MOSFET 4600 diode in 400 6 volts SMPS Power supply 12 VOLT 10 AMP smps 12 volt 4 amp smps 10 amp diode rectifiers datasheet abstract
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Abstract: Applications Information: The Cree SiC DMOSFET has removed the upper voltage limit of silicon MOSFETs. , ) C2D10120D C2D10120D 10A, 1200V SiC Schottky Input Pulse Fall Time Input Pulse Rise Time + 800V 42.3f , delivering these SiC die may be considered a means of temporary storage only. Due to an increase in adhesion , stored in a temperature-controlled nitrogen dry box soon after receipt. Cree will further recommend that , communication or control systems, air traffic control systems, or weapons systems. Copyright © 2011 Cree, Inc. ... Original
datasheet

10 pages,
443.88 Kb

SiC POWER MOSFET CMF10120 CMF10120D Cree SiC MOSFET DMOS SiC JEDEC24 423F SiC cree diode die mosfet 10a 800v high power C2D10120D diode schottky 1000V 10a MOSFET 800V 10A mosfet 10a 800v CPMF-1200-S160B CPMF-1200-S160B abstract
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Abstract: : +1.919.313.5451 www.cree.com/power Applications Information: The Cree SiC DMOSFET has removed the upper , 10% 856H 10% VGS(off) C2D10120D C2D10120D 10A, 1200V SiC Schottky Input Pulse Fall Time , * The die-on-tape method of delivering these SiC die may be considered a means of temporary storage , receipt. Cree will further recommend that all die be removed from tape to a waffle pack, to a similar , systems. Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to ... Original
datasheet

10 pages,
704.48 Kb

423F DMOS SiC Cree SiC diode die Cree SiC MOSFET MOSFET 20a 800v MOSFET 800V 10A CMF20120D C2D10120D CPMF-1200-S080B bare Die mosfet DMOSFET CPMF-1200-S080B abstract
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Abstract: ://powerelectronics. com/mag/power_ 3. Singh, Ranbir, and Richmond, James, "SiC Power Schottky Cree's SiC ZERO , By Michael O'Neill, Applications Engineer, Cree Inc., Durham, N.C. Silicon carbide enables the , single-crystal silicon carbide (SiC) wafers, the time has come to recognize the true potential this technology has to offer. The advantages of SiC over its counterpart Si and gallium arsenide (GaAs , be the replacement of the Si PiN diode with a SiC Schottky Barrier Diode (SBD). The second phase ... Original
datasheet

4 pages,
830.62 Kb

CPWR-AN01 CSD10060 delta vfd control EN61800-3 HFA15TB60 inverter vfd B DELTA IRG4BC20K IRG4BC20KD vfd advantage operation of IGBT in inverter section delta electronics VFD vfd B DELTA datasheet abstract
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Abstract: SiC Schottky Diodes in Power Factor Correction By Stuart Hodge Jr., Senior Member IEEE, Cree Inc., Efficiency gains resulting from the use of highvoltage SiC rectifiers in PFC boost converters , temperature, which can lead to thermal runaway conditions. Cree Inc. has developed a line of high-voltage SiC , rectifiers and Cree's SiC Schottky rectifiers. Although efficiency improvements are often a major design , in SiC and Their Applications," Cree Inc., www.cree.com/ftp/ PFC converters. As you can see, a major ... Original
datasheet

4 pages,
257.62 Kb

PFC design CCM PFC inductor analysis datasheet abstract
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Abstract: are fabricated using nominally 100-mm (or smaller) SiC substrates manufactured by Cree, Inc., Furthermore, this report certifies that product families using 1200-V SiC Schottky diode die assembled in , in "failures per billion device hours." Table 6: Historical Cree SiC Schottky Diode Performance , 1200-V Qualifi This report documents the qualification and reliability test results for the Cree , the testing process. This report certifies that Schottky diode die manufactured at Cree, Inc., Durham ... Original
datasheet

8 pages,
211.08 Kb

C2D05120A C2D20120 Cree SiC MOSFET cree Visual inspection Diode 1754 ESD test plan 1200v diode to247 A115A SMD JESD47B POWER MOSFET 4600 Schottky diode Die AEC-Q101C AEC-Q101-002 datasheet abstract
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Abstract: : +1.919.313.5451 www.cree.com/power Applications Information: The Cree SiC DMOSFET has removed the upper , 10% VGS(off) C2D10120D C2D10120D 10A, 1200V SiC Schottky Input Pulse Fall Time Input Pulse Rise , * The die-on-tape method of delivering these SiC die may be considered a means of temporary storage , receipt. Cree will further recommend that all die be removed from tape to a waffle pack, to a similar , systems. Copyright © 2010-2011 Cree, Inc. All rights reserved. The information in this document is subject ... Original
datasheet

10 pages,
873.03 Kb

transformer mosfet gate drive circuit C2D10120D CMF-2012 Controlled avalanche Schottky Cree SiC MOSFET diode schottky 1000V 10a DMOS SiC SiC POWER MOSFET CPMF-1200-S080B CMF20120 bare Die mosfet CPMF-1200-S080B abstract
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Abstract: : +1.919.313.5451 www.cree.com/power Applications Information: The Cree SiC DMOSFET has removed the upper , (off) C2D10120D C2D10120D 10A, 1200V SiC Schottky Input Pulse Fall Time Input Pulse Rise Time + , * The die-on-tape method of delivering these SiC die may be considered a means of temporary storage , receipt. Cree will further recommend that all die be removed from tape to a waffle pack, to a similar , systems. Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to ... Original
datasheet

10 pages,
600.04 Kb

SiC POWER MOSFET DMOS SiC Cree SiC MOSFET CPMF-1200-S160B C2D10120D 3E27 DMOSFET CMF10120D CMF10120 CPMF-1200-S160B abstract
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, 2001-2005 Cree, Inc. SiC Power Diode Reliability - October 2008 To Reliability Studies HOME SiC ZERO RECOVERY ® Schottky Diode Reliability at Extremely High Voltage Slew Rates , 2001-2005 Cree, Inc. The influence of Copyright © 2005-2010 Cree, Inc. All rights reserved. The information contained on this compact disc is subject to change without notice. Cree, the Cree logo and Zero Recovery are registered
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Application Notes HOME Selection Guide of SiC Schottky Diode in CCM PFC Applications by Xu Huang SiC Power Schottky Diodes by Jim Richmond Recommended Solder Profiles for Cree, Inc. Inc Power Products Products, please contact us at PowerSales@cree.com . Copyright © 2005-2010 Cree, Inc. All rights reserved. The information contained on this compact disc is subject to change without notice. Cree, the
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Cree Power Products Cree, Inc. is the world leader in the development, manufacturing and marketing of electronic devices made from silicon carbide (SiC), a semiconductor material that is superior to other © 2005-2010 Cree, Inc. All rights reserved. The information contained on this compact disc is subject to change without notice. Cree, the Cree logo and Zero Recovery are registered trademarks and Z-Rec is a
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Cree 07/10/2010 4.12 Kb HTM index.htm
Systems More Efficient , October 2008, Michael O'Neill SiC Schottky , Jim Richmond et al. SiC Puts New Spin On Motor Drives: Power Electronics © 2005-2010 Cree, Inc. All rights reserved. The information contained on this compact disc is subject to change without notice. Cree, the Cree logo and Zero Recovery are registered trademarks and Z-Rec is a trademark of Cree, Inc.
www.datasheetarchive.com/files/cree/articles/articles.htm
Technical Papers HOME 600 V, 1-40 A, Schottky Diodes in SiC and Their Applications , Anant Agarwal, et al. To request © 2005-2010 Cree, Inc. All rights reserved. The information contained on this compact disc is subject to change without notice. Cree, the Cree logo and Zero Recovery are registered trademarks and Z-Rec is a trademark of Cree, Inc.
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Mathcad Calculation Files HOME Selection Guide of SiC Schottky Diodes in CCM PFC Applications To request additional Cree, Inc. All rights reserved. The information contained on this compact disc is subject to change without notice. Cree, the Cree logo and Zero Recovery are registered trademarks and Z-Rec is a trademark of Cree, Inc.
www.datasheetarchive.com/files/cree/mathcad calculation files/mathcadcalculationfiles.htm
Cree 07/10/2010 1.2 Kb HTM mathcadcalculationfiles.htm
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www.datasheetarchive.com/files/kaleidoscope/cad/mccad - schematics - pcb-st/mac/mccad_eds_for_macos.hqx
Kaleidoscope 10/04/2005 22278.99 Kb HQX mccad_eds_for_macos.hqx