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Abstract: ABSTRACT Cree introduced its ZERO RECOVERY® line of SiC power rectifiers four years ago into mainstream , performance in the field. This paper explains why Cree SiC products are expected to be inherently reliable, discusses Cree's approach to reliability assessment, and presents the expected lifetime of SiC power , Summary VC CPWR-RS03 CPWR-RS03, RE - October 2008 r Diode Reliability SiC Powe Cree's 600-V family of , /power. For warranty information please contact Cree Sales at PowerSales@cree.com. SiC ... Cree
Original
datasheet

4 pages,
252.75 Kb

CSD10060 CSD06060 CSD04060 155C schottky diode FIT cree Sic TEXT
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Abstract: ABSTRACT Cree introduced its ZERO RECOVERY® line of SiC power rectifiers three years ago into mainstream , performance in the field. This paper explains why Cree SiC products are expected to be inherently reliable, discusses Cree's approach to reliability assessment, and presents the expected lifetime of SiC power diodes under various operational and environmental conditions. SiC Schottky Diode Reliability Cree , www.cree.com/power. For warranty information please contact Cree Sales at PowerSales@cree.com. SiC ... Cree
Original
datasheet

4 pages,
228.55 Kb

schottky diode FIT powerdio CSD10060A 155C reliability cree CSD06060A cree Sic TEXT
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Abstract: warranty information please contact Cree Sales at PowerSales@cree.com. Selection Guide of SiC , rated SiC Schottky diodes for the CCM PFC applications. Copyright © 2006 Cree, Inc. All rights , Selection Guide of SiC Schottky Diode in CCM PFC Applications - August 2006 Selection Guide of SiC Schottky Diode in CCM PFC Applications Silicon Carbide Schottky diodes are ideal devices for CCM , recovery current. Selection of a SiC Schottky boost diode is different from its counter part- Silicon ... Cree
Original
datasheet

4 pages,
454.46 Kb

Schottky diode Die PFC smps design mosfet 10a 600v 12 VOLT 2 AMP smps 1200 volt mosfet mathcad boost smps 12 volt 3 amp boost pfc operate in ccm circuit for 12 VOLT 2 AMP smps 5 VOLT 20 AMP smps diode schottky 600v mathcad INDUCTOR DESIGN Cree SiC diode die mathcad pfc 12 VOLT 10 AMP smps MOSFET and parallel Schottky diode mathcad mathcad forward converter design circuit for 12 VOLT 6 AMP smps 12 VOLT 2 AMP smps circuit TEXT
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Abstract: power loss 150° C. The SBD has significantly lower Cree, w/ the Si Ultrafast diode and the SiC SBD , switching parameter SiC SBD at 25° and 125° superimposed C C Cree, Inc. comparison between Si Ultrafast and SiC Silicon Drive 4600 on 2003-2006 Cree,TheAllpeakreserved. The informationIGBTdocument is , with a SiC Schottky diode such as the Cree Zero Recovery® SBD results in a substantial reduction in , in hard-switched IGBT applications with a Silicon Carbide (SiC) Schottky diode reduces the switching ... Cree
Original
datasheet

8 pages,
3593.01 Kb

V800 12 VOLT 150 AMP smps circuit 150 VOLT 10 AMP IGBT circuit 24 volt 10 amp smps 60 amp 600 Volt Diode 12 VOLT 10 AMP smps power diode of169 INDIOD calculation of IGBT snubber Cree SiC MOSFET CPWR-AN03 IGBT 50 amp 1000 volt 1200-VOLT ultrafast igbt TEXT
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Abstract: mm SiC chip 2 · The chip is made by Cree Research Inc., U.S.A. · Radiation-hard UVC interference , mit 1.0 × 1.0 mm SiC chip · Chiphersteller: Cree Research Inc., U.S.A. · Der , mit 0.5 × 0.5 mm SiC chip · Chiphersteller: Cree Research Inc., U.S.A. · Der , UV-index sensor based on SiC EryF* Features · Special UV-index sensor, precision up to +/- 0.5 , The chip is manufactured by Cree Research Inc., U.S.A. Eigenschaften · Spezieller UV-Index ... Jin Zon Enterprise
Original
datasheet

49 pages,
1021.43 Kb

uvc photodiode FLAME SENSOR UV SG01S-ISO TO-39, UVC ultraviolet sensor "smax" ultraviolet sensor flame SUN SENSOR SG01S uv flame sensor TEXT
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Abstract: paper were not Cree devices the failures have led to questions about the dV/dt performance of SiC , 20 Cree SiC ZERO ® RECOVERY Schottky diodes were tested at a voltage slew rate greater than , method approximating a SMPS application. There were no failures of the Cree SiC ZERO RECOVERY , Reliability Study SiC ZERO RECOVERY® Schottky Diode Reliability at Extremely High Voltage Slew Rates Summary Testing was performed to determine if a failure mechanism was present in the Cree ... Cree
Original
datasheet

3 pages,
158.04 Kb

15 amp diodes 20 amp diode 200 Amp mosfet POWER MOSFET 4600 10 amp diode 4 amp diode testing of diode 5.5 volt 1.5 amp. smps diode in 400 6 volts SMPS Power supply 12 VOLT 10 AMP smps 12 volt 4 amp smps 15 Amp 100 volt mosfet 10 amp diode rectifiers 12 VOLT 100 AMP smps 60 amp 600 Volt Diode 600 VOLT 6 AMP smps 5 VOLT 20 AMP smps smps 12 volt 3 amp 12 VOLT 2 AMP smps TEXT
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Abstract: SiC Schottky Diodes in Power Factor Correction By Stuart Hodge Jr., Senior Member IEEE, Cree Inc., Efficiency gains resulting from the use of highvoltage SiC rectifiers in PFC boost converters , rectifiers and Cree's SiC Schottky rectifiers. Although efficiency improvements are often a major design , in SiC and Their Applications," Cree Inc., www.cree.com/ftp/ PFC converters. As you can see, a major , reliability. At the same time, SiC Schottkys can reduce EMI. ctive Power Factor Correction (PFC) is w idely ... Original
datasheet

4 pages,
257.62 Kb

boost pfc operate in ccm PFC design CCM PFC inductor analysis TEXT
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Abstract: ://powerelectronics. com/mag/power_ 3. Singh, Ranbir, and Richmond, James, "SiC Power Schottky Cree's SiC ZERO , By Michael O'Neill, Applications Engineer, Cree Inc., Durham, N.C. Silicon carbide enables the , single-crystal silicon carbide (SiC) wafers, the time has come to recognize the true potential this technology has to offer. The advantages of SiC over its counterpart Si and gallium arsenide (GaAs , be the replacement of the Si PiN diode with a SiC Schottky Barrier Diode (SBD). The second phase ... Cree
Original
datasheet

4 pages,
830.62 Kb

CPWR-AN01 CSD10060 delta vfd control Delta vfd s EN61800-3 HFA15TB60 inverter vfd B DELTA IRG4BC20K IRG4BC20KD vfd advantage cree Sic operation of IGBT in inverter section delta electronics VFD vfd B DELTA TEXT
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Abstract: Nitride Epitaxy Products Cree produces GaN, AlxGa1-xN and InyGa1-yN epitaxial layers on up to 100 mm diameter SiC and sapphire substrates. Unless noted otherwise on the product quotation, the , Structural Property Value or Range Substrate SiC (n-type or Semi-Insulating) Al2O3 Precision , (3 m layer on SiC substrate (5) Al0.25Ga0.75N < 700 arcsec (3 m layer on Al2O3 substrate) < 500 arcsec (3 m layer on SiC substrate (5) Visible Defects < 50 / cm2 Dislocation Density ... Cree
Original
datasheet

2 pages,
89.51 Kb

silicon carbide sic wafer nitride 1E16 Gan on silicon substrate TEXT
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Abstract: ) measurements presented Diode Switching were above FET Efficiency and Temperature 0 4 SiC Diode; 1 Cree , circuit was operated with the SiC and the Cree logo are registered trademarks of Cree, Inc. switchingIn , APPLICATION NOTE SiC Power Schottky Diodes in Power-Factor SiC Power Schottky Diodes in Power , (SiC) show great performance advantages as compared to those made with other semiconductors. circuits , ability to switch fast fast recovery diodes zero has of the SiC Schottky barrier diode (SBD) lie Silicon ... Cree
Original
datasheet

7 pages,
834.55 Kb

Cree SiC MOSFET CSD04060 "silicon carbide" FET 10MOSFET computer smps circuit diagram diode schottky 600v sic diode MOSFET and parallel Schottky diode irfp450 mosfet full bridge 4600 mosfet mosfet 10a 600v 6A irfp450 mosfet irfp450 mosfet full bridge pwm 500 watt smps circuit diagram FULL WAVE mosfet RECTIFIER CIRCUITS CPWR-AN01 IXYS DSEI 12-06A snubber CIRCUITS mosfet ixys dsei Cree SiC diode die TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
Articles Mathcad Calculation Files HOME Selection Guide of SiC Schottky Diodes in CCM PFC Applications       PowerSales@cree.com . Copyright © 2005-2010 Cree, Inc. All rights reserved. The information contained on this compact disc is subject to change without notice. Cree, the Cree logo and Zero Recovery are registered trademarks and Z-Rec is a trademark of Cree, Inc.  
/datasheets/files/cree/mathcad calculation files/mathcadcalculationfiles.htm
Cree 07/10/2010 1.2 Kb HTM mathcadcalculationfiles.htm
Cree Power Products   Cree Power http://www.cree.com/power       Cree, Inc. is the world leader in the development, manufacturing and marketing of electronic devices made from silicon carbide (SiC), a PowerSales@cree.com . Copyright © 2005-2010 Cree, Inc. All rights reserved. The information contained on this compact disc is subject to change without notice. Cree, the Cree logo and Zero Recovery
/datasheets/files/cree/index.htm
Cree 07/10/2010 4.12 Kb HTM index.htm
No abstract text available
/download/24612278-69557ZC/cpwr-pspice rev-a.zip ()
Cree 07/10/2010 29.7 Kb ZIP cpwr-pspice rev-a.zip
No abstract text available
/datasheets/files/kaleidoscope/cad/mccad - schematics - pcb-st/mac/mccad_eds_for_macos.hqx
Kaleidoscope 10/04/2005 22278.99 Kb HQX mccad_eds_for_macos.hqx
No abstract text available
/download/42652172-393173ZC/mplabalc30v2_05.tgz
Microchip 09/11/2006 11568.47 Kb TGZ mplabalc30v2_05.tgz