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Part : QB-COMMON-PW-EA Supplier : Renesas Electronics Manufacturer : Avnet Stock : 1 Best Price : $41.1765 Price Each : $41.1765
Part : QB-COMMON-PW-EA Supplier : Renesas Electronics Manufacturer : Avnet Stock : - Best Price : $41.1765 Price Each : $41.1765
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Part : QB-COMMON-PW-EA Supplier : Renesas Electronics Manufacturer : Future Electronics Stock : 2 Best Price : $0.0010 Price Each : $0.0010
Part : QB-COMMON-PW-SG Supplier : Renesas Electronics Manufacturer : element14 Asia-Pacific Stock : - Best Price : $61.36 Price Each : $64.8960
Part : LABOR DC COMMON STRAPPED Supplier : Bel Power Solutions Manufacturer : Master Electronics Stock : 10 Best Price : - Price Each : -
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common emitter amplifier

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: needed to design a thermistor in a simple class A common emitter amplifier. However, the principles , the common emitter amplifier in Figure 1. Vcc (+ 20 V) Vi signal IN Rc 10 K R1 Ic VB , ) Figure 3. Temperature Compensation of a Common Emitter Voltage Amplifier www.vishay.com 2 For more , Application Note Vishay BCcomponents NTC Temperature Compensation of a Common Emitter Voltage , EMITTER CIRCUIT Let us build a circuit operating as a voltage amplifier with a voltage gain of 50, a Vishay BCcomponents
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smd transistor 712 transistor Common Base amplifier class A push pull power amplifier NTC Thermistor smd Fixed resistor transistor b25 B25/85
Abstract: Emitter Amplifier Power Gain Gpe Vce=6V, lc=5mA, f=200MHz 15 dB SM SAMSUNG SEMICONDUCTOR 522 , RF AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C) SOT-23 Characteristic Symbol Rating , 2.8 mW/°C Junction Temperature Ti 150 "C Storage Temperature Tstg -55^150 â'¢c 1. Base 2. Emitter , Voltage BVceo lc=3mA, Ib=0 12 V - Emitter Base Breakdown Voltage BVebo lE=0.01mA, lc=0 2.5 V Collector , Emitter Saturation Voltage Vce (sat) lc=10mA, la=1mA 0.4 V t Base-Emitter Saturation Voltage Vbe (sat -
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MMBR5179 transistor RF 100MH 200MH
Abstract: ELECTRICAL CHARACTERISTICS - continued Characteristic FUNCTIONAL DATA Input Impedance, Common Emitter Amplifier (Vce = 7.5 V, f - 88 MHz, Pjn = 0,075 W l Load Impedance, Common Emitter Amplifier IV c e = 7.5 V -
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TP212 TP212S 244C-01 72SMD0
Abstract: =2mA, f=1KHz 25 Noise Figure NF Vce=6V, lc=1.5mA, f=200MHz Rs=50fl 4.5 dB J Common Emitter Amplifier , KST5179 NPN EPITAXIAL SILICON TRANSISTOR RF AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta , ELECTRICAL CHARACTERISTICS (Ta=25°C) SOT-23 1. Base 2. Emitter 3. Collector Characteristic Symbol Test , Breakdown Voltage BVceo lc=3mA, lB=0 12 V Emitter Base Breakdown Voltage BVebo lE=0.01mA, lc=0 2.5 V , Emitter Saturation Voltage Vce (sat) lc = 10mA, Ib=1 mA 0.4 V Base-Emitter Saturation Voltage Vbe (sat -
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7U4142
Abstract: - - dB POUT = 1W, VCC = 20V, f = 400MHz 45 - - % Functional Test Common Emitter Amplifier Power Gain Collector Efficiency CB Radio Banner Exchange file:///A|/Downloads , = +200°C - - 5.0 mA VCE = 55V, VBE = -1.5V Emitter Cutoff Current ICEO ICEX -
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2N3866 Transistor 2N3866 2N3866 application note 200mhz 1w ic 400ma, npn transistor data 2n3866 3866/2N3866 400MH
Abstract: BVEBO ICBO hFE VCE (sat) VBE (sat) fT CCB hFE NF Common Emitter Amplifier Power Gain GPE , KST5179 NPN EPITAXIAL SILICON TRANSISTOR RF AMPLIFIER TRANSISTOR SOT-23 Î) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage , VCEO VEBO IC PC Rating V V V mA mW mW/ Î Î Î 1. Base 2. Emitter 3. Collector , Voltage Collector-Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-off Current Samsung Electronics
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kst51
Abstract: MPA 201 0.5 Watts, 12.5 Volts, Class A Linear to 500 MHz 50 Hybrid Amplifier GENERAL DESCRIPTION The MPA 201 is a COMMON EMITTER amplifier device designed for broadband performance to 500 MHz , 6.0 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base , Volts Vce = 20 V, Ic = 140 A 0.5 0.8 BVebo BVces BVceo hFE Cob jc Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Breakdown DC Current Gain Capacitance Ghz Technology
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55AU
Abstract: Noise Figure NF Vce=6V, lc=1.5mA, f=200MHz Rs=50£i 4.5 dB Common Emitter Amplifier Power Gain Gpe Vce , KST5179 NPN EPITAXIAL SILICON TRANSISTOR RF AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage VcbO 20 V Collector-Emitter Voltage VcEO 12 V , -23 1. Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (TA=25°C) Characteristic Symbol Test , Breakdown Voltage BVceo lc=3mA, Ib=0 12 V Emitter Base Breakdown Voltage BVebo Ie=0.01 mA, lc=0 2.5 V -
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Abstract: CONDITIONS: Transistor Frequency Noise Figure Common Emitter Amplifier Power Gain Power Output Qpe Pout , gain, low-noise amplifier , oscillator and mixer circuits. It is also suitable for DHF converter , Vro=15V TJ%50oC Collector-Base Breakdown Voltage bvcbo 20 V IQ=0.001SA §g=0 Collector Emitter Sustaining Voltage ?CE0(sus) 12 ¥ IQ=3isA v> Emitter Base Breakdown Voltage Voltage B¥ebo 2.5 V Ig=0.01mA is=o Collector Emitter Saturation Voltage ?CE(sat) 0.4. ? Ig=10sA IB=MA Base Emitter Saturation -
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IG-001 30CMW 20CHH 500MH
Abstract: Figure NF Vce=6V, lc=1.5mA, f=200MHz 4.5 dB Rs=50tl Common Emitter Amplifier Power Gain Gpe Vce , Temperature Tstg -55~150 °C TO-92 i v ^^ K Emitter 2. Base 3. Collect« ELECTRICAL CHARACTERISTICS (Ta=25°C) Characteristic Symbol Test Condition Min Max Unit Collector Emitter Sustaining , Emitter Base Breakdown Voltage BVebo lE=0.01mA, lc=0 2.5 V Collector Cutoff Current leso VCB=15V, IEâ -
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MPS5179 LS012
Abstract: Noise Figure hpE Common Emitter Amplifier Power Gain Gpe BVcbo BVE o B IcBO Vce (sat , mW mW/°C mW mW/°C °C â c 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (Ta=25°C) Characteristic Test Condition Symbol Collector Emitter Sustaining Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Cutoff Current VcEO (SUS -
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KSP5179
Abstract: LV2024E45R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LV2024E45R is Designed for Class A Common Emitter Amplifier Applications to 2.3 GHz. FEATURES INCLUDE: · Replacement for Philips LV2024E45R · Gold Metalization · Emitter Ballasting PACKAGE STYLE .250 2L FLG Dim: A B C D E F H J K N Q U Inches Min 0.790 0.240 0.144 0.115 0.055 0.045 0.115 0.003 0.225 0.220 0.125 0.552 Max 0.810 0.260 , OC to +200 OC 9.0 OC/W 1 = BASE 2 = COLLECTOR 3 = EMITTER ORDER CODE: ASI10472 CHARACTERISTICS Advanced Semiconductor
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b 342 d transistor
Abstract: Constant Noise Figure hFE VCE (sat) VBE (sat) fT CCB hFE Cc rbb NF Common Emitter Amplifier , V V mA mW mW/ mW mW/ 1. Emitter 2. Base 3. Collector ) ELECTRICAL Samsung Electronics
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Abstract: Figure Common Emitter Amplifier Power Gain Sym bol BV cbo BV ceo BV ebo Ic io Hr a Test C onditions , V V V /A 1. Base 2. Emitter 3. Collector ELECTRICAL CH ARACTERISTICS (TA*25t:) Characteristic Collector-Base Breakdown Voltage Coliector-Emitter Breakdown Vottage Emitter Base Breakdown -
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B589
Abstract: LTE21015R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LTE21015R is Designed for Class A Common Emitter Amplifier Applications to 2.3 GHz. FEATURES INCLUDE: PACKAGE STYLE .250 2L FLG · Replacement for Philips LTE21015R · Gold Metalization · Emitter Ballasting MAXIMUM RATINGS IC 800 mA VCB 45 V PDISS 6.0 W @ TC = 25 OC TJ -55 OC to +200 OC T STG -55 OC to +200 OC JC 15 OC/W CHARACTERISTICS SYMBOL 1 = BASE 2 = COLLECTOR 3 = EMITTER Advanced Semiconductor
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d 317 transistor ASI10473
Abstract: Temperature · Low Noise at RF Frequencies · High Gain, Low Saturation · Common Emitter Configuration · TX, TXV , Base Capacitance (VCB = 15V; IE = 0A; f = 1MHz) DC Current Gain * (IC = 80mA; VCE = 10V) Common Emitter , RATINGS Collector - Emitter Voltage (RBE = 330 Ohm) Collector - Base Voltage Emitter - Base Voltage , : COLLECTOR PIN 2: BASE PIN 3: EMITTER (CASE) SYMBOL VCER V CBO V EBO IC PD TSTG TOP R JC VALUE 25 35 , * www.ssdi-power.com ELECTRICAL CHARACTERISTICS RATING Collector - Emitter Breakdown Voltage * (IC = 5mA, IE = 0A Solid State Devices
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SMRF525 TR0028A
Abstract: LKE21015T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LKE21015T is Designed for Class A Common Emitter Amplifier Applications to 2.1 GHz. PACKAGE STYLE .250 2L FLG FEATURES INCLUDE: · Replacement for Philips LKE21015R · Gold Metalization · Diffused Emitter Ballasting MAXIMUM RATINGS IC 800 mA VCB 45 V PDISS 8.0 W @ TC = 25 °C TJ -55 °C to +200 °C TSTG -55 °C to +200 °C JC 11 °C/W CHARACTERISTICS 1&4 = EMITTER 2 = BASE 3 = Advanced Semiconductor
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Abstract: MLN20015R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MLN20015R is Designed for Class A, Common Emitter Amplifier Applications . A ØD B .060 x 45° CHAMFER C E FEATURES INCLUDE: · 2.0 GHz · High Gain · Gold Metalization F H G J L I K M NP DIM VCES 50 V PDISS 20 W @ TC = 25 °C .740 / 18.80 .245 / 6.22 D 700 mA inches / mm .032 / 0.81 C IC inches / mm .028 / 0.71 B Advanced Semiconductor
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Abstract: I.OMHzl FUNCTIONAL TEST Common Emitter Amplifier Power Gain (Figure 1) (Pou,« 40 Watts, VCE * 28 Vdc , designed primarily for wideband large-signal amplifier stages in the 125-175 MHz frequency range.  , Vg B 40 PIN 1. 2. 3, 4. EMITTER BASE EMITTEfl COLLECTDB Vdc Collector Current - New Jersey Semiconductor
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BLY93a BLY93A 175MH
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Line TP5015 U H F Lin ear P o w er TVansistor . . . designed for 24 Volt UHF large-signal common emitter amplifier applica tions in industrial and commercial FM equipment operating in the 380 to 512 MHz frequency range, i.e., cellular radio base stations. · . . · · 3 8 0 -5 1 2 MHz 1 5 W - Pout 2 4 V - VC C High Gain , Common-Emitter Amplifier Power Gain (VCE = 24 V, Pout = 15 W, f = 470 MHz, Iq = 50 mA) Collector Efficiency (VC E -
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the380
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