NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: LKE21015T LKE21015T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LKE21015T LKE21015T is Designed for Class A Common Emitter Amplifier Applications to 2.1 GHz. PACKAGE STYLE .250 2L FLG FEATURES INCLUDE: · Replacement for Philips LKE21015R LKE21015R · Gold Metalization · Diffused Emitter Ballasting MAXIMUM RATINGS IC 800 mA VCB 45 V PDISS 8.0 W @ TC = 25 °C TJ -55 °C to +200 °C TSTG -55 °C to +200 °C JC 11 °C/W CHARACTERISTICS 1&4 = EMITTER 2 = BASE 3 = ... | Original |
1 pages, |
LKE21015T LKE21015R "RF Power Transistor" Common emitter amplifier LKE21015T abstract |
| Abstract: MPA 201 0.5 Watts, 12.5 Volts, Class A Linear to 500 MHz 50 Hybrid Amplifier GENERAL DESCRIPTION The MPA 201 is a COMMON EMITTER amplifier device designed for broadband performance to 500 MHz , 6.0 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base , Volts Vce = 20 V, Ic = 140 A 0.5 0.8 BVebo BVces BVceo hFE Cob jc Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Breakdown DC Current Gain Capacitance ... | Original |
1 pages, |
55AU common emitter amplifier datasheet abstract |
| Abstract: Common Emitter Amplifier Power Gain Power Output Qpe Pout 900 1400 2000 4.5 15 20 »Hz dB dB , gain, low-noise amplifier , oscillator and mixer circuits. It is also suitable for DHF converter , Collector-Base Breakdown Voltage bvcbo 20 V IQ=0.001SA 001SA §g=0 Collector Emitter Sustaining Voltage ?CE0(sus) 12 ¥ IQ=3isA v> Emitter Base Breakdown Voltage Voltage B¥ebo 2.5 V Ig=0.01mA is=o Collector Emitter Saturation Voltage ?CE(sat) 0.4. ? Ig=10sA IB=MA Base Emitter Saturation Voltage 1.0 V Ic=10aA Ig=lml ... | OCR Scan |
2 pages, |
common emitter amplifier datasheet abstract |
| Abstract: Figure e i NF Vce=6V, lc= 1.5mA, f=200MHz Rs=50fl 4.5 dB j Common Emitter Amplifier Power Gain Gpe , AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C) SOT-23 Characteristic Symbol Rating Unit , Junction Temperature Ti 150 "C Storage Temperature Tstg -55^150 •c 1. Base 2. Emitter 3. Collector , V - Emitter Base Breakdown Voltage BVebo lE=0.01mA, lc=0 2.5 V Collector Cutoff Current IcbO Vcb=15V, Ie-0 0.02 fA i DC Current Gain hFE VCE=1V, lc=3mA 25 ! Collector Emitter Saturation Voltage ... | OCR Scan |
1 pages, |
MMBR5179 common emitter amplifier MMBR5179 abstract |
| Abstract: , lc=2mA, f=1KHz 25 Noise Figure NF Vce=6V, lc=1.5mA, f=200MHz Rs=50fl 4.5 dB J Common Emitter , KST5179 KST5179 NPN EPITAXIAL SILICON TRANSISTOR RF AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS , -55~150 °C ELECTRICAL CHARACTERISTICS (Ta=25°C) SOT-23 1. Base 2. Emitter 3. Collector , Collector-Emitter Breakdown Voltage BVceo lc=3mA, lB=0 12 V Emitter Base Breakdown Voltage BVebo lE=0.01mA, lc=0 , Collector Emitter Saturation Voltage Vce (sat) lc = 10mA, Ib=1 mA 0.4 V Base-Emitter Saturation Voltage ... | OCR Scan |
1 pages, |
KST5179 common emitter amplifier KST5179 abstract |
| Abstract: BVEBO ICBO hFE VCE (sat) VBE (sat) fT CCB hFE NF Common Emitter Amplifier Power Gain GPE , KST5179 KST5179 NPN EPITAXIAL SILICON TRANSISTOR RF AMPLIFIER TRANSISTOR SOT-23 Î) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage , VCEO VEBO IC PC Rating V V V mA mW mW/ Î Î Î 1. Base 2. Emitter 3. Collector , Voltage Collector-Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-off Current ... | Original |
1 pages, |
KST5179 common emitter amplifier KST5179 abstract |
| Abstract: Noise Figure NF Vce=6V, lc=1.5mA, f=200MHz Rs=50£i 4.5 dB Common Emitter Amplifier Power Gain Gpe , KST5179 KST5179 NPN EPITAXIAL SILICON TRANSISTOR RF AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage VcbO 20 V Collector-Emitter Voltage , -55-150 °C SOT-23 1. Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (TA=25°C) Characteristic , Collector-Emitter Breakdown Voltage BVceo lc=3mA, Ib=0 12 V Emitter Base Breakdown Voltage BVebo Ie=0.01 mA, lc=0 ... | OCR Scan |
1 pages, |
KST5179 common emitter amplifier KST5179 abstract |
| Abstract: , lc=1.5mA, f=200MHz 4.5 dB Rs=50tl Common Emitter Amplifier Power Gain Gpe Vce=6V, lc=5mA, f=200MHz , Temperature Tstg -55~150 °C TO-92 i v ^^ K Emitter 2. Base 3. Collect« ELECTRICAL CHARACTERISTICS (Ta=25°C) Characteristic Symbol Test Condition Min Max Unit Collector Emitter Sustaining Voltage VcEO (SUS) lc=3mA, ls=0 12 V Collectof Base Breakdown Voltage BVcso lo=0.001mA, lE=0 20 V Emitter ... | OCR Scan |
1 pages, |
MPS5179 common emitter amplifier MPS5179 abstract |
| Abstract: LTE21015R LTE21015R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LTE21015R LTE21015R is Designed for Class A Common Emitter Amplifier Applications to 2.3 GHz. FEATURES INCLUDE: PACKAGE STYLE .250 2L FLG · Replacement for Philips LTE21015R LTE21015R · Gold Metalization · Emitter Ballasting MAXIMUM RATINGS IC 800 mA VCB 45 V PDISS 6.0 W @ TC = 25 OC TJ -55 OC to +200 OC T STG -55 OC to +200 OC JC 15 OC/W CHARACTERISTICS SYMBOL 1 = BASE 2 = COLLECTOR 3 = EMITTER ... | Original |
1 pages, |
LTE21015R d 317 transistor common emitter amplifier b 342 d transistor LTE21015R abstract |
| Abstract: - - dB POUT = 1W, VCC = 20V, f = 400MHz 45 - - % Functional Test Common Emitter Amplifier Power Gain Collector Efficiency CB Radio Banner Exchange file:///A , = +200°C - - 5.0 mA VCE = 55V, VBE = -1.5V Emitter Cutoff Current ICEO ICEX ... | Original |
2 pages, |
uhf vhf amplifier 2N3866 application npn UHF transistor IC vhf/uhf Amplifier 50 ohm 1w 8 ohm 1w cb radio common emitter amplifier voltage multiplier ic data 2n3866 ic 400ma, npn transistor 200mhz 1w 2N3866 application note 2N3866 2N3866 abstract |
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| -grounded through a capacitor. From symmetry, the common-mode component shifts the current between the two branches and, for small signals, acts as a standard common-emitter amplifier. The MAX2683 MAX2683 MAX2683 MAX2683 employs an emitter-coupled-pair amplifier. The operation of this amplifier is best understood by dividing the modulated signal into its common-mode and differential-mode components. The from the emitter-coupled amplifier in the Gilbert cell. The amount of gain achieved will vary www.datasheetarchive.com/files/maxim/0003/anjlq01.htm |
Maxim | 04/04/2001 | 34.11 Kb | HTM | anjlq01.htm |
| demands (CDMA) Common emitter class AB driver. 2.4 GHz low noise amplifier with the BFG480W BFG480W BFG480W BFG480W 1999-12-22 2.45 GHz power amplifier with the BFG480W BFG480W BFG480W BFG480W 1999-12-22 2 GHz low noise amplifier with the BFG480W BFG480W BFG480W BFG480W 1999-12-14 900 MHz low noise amplifier with the BFG480W BFG480W BFG480W BFG480W 1999 applications in a 4-pin dual-emitter SOT343R plastic package. Features High power gain High efficiency Low noise figure High transition frequency Emitter is thermal lead Low feedback www.datasheetarchive.com/files/philips/pip/bfg480w_3.html |
Philips | 24/04/2003 | 4.44 Kb | HTML | bfg480w_3.html |
| system demands (CDMA) Common emitter class AB driver. 2.4 GHz low noise amplifier with the BFG480W BFG480W BFG480W BFG480W 1999-12-22 2.45 GHz power amplifier with the BFG480W BFG480W BFG480W BFG480W 1999-12-22 2 GHz low noise amplifier with the BFG480W BFG480W BFG480W BFG480W 1999-12-14 900 MHz low noise amplifier with the BFG480W BFG480W BFG480W BFG480W 1999 applications in a plastic, 4-pin dual-emitter SOT343R package. Features High power gain High efficiency Low noise figure High transition frequency Emitter is thermal lead Low feedback www.datasheetarchive.com/files/philips/pip/bfg480w_n_2.html |
Philips | 23/04/2003 | 4.53 Kb | HTML | bfg480w_n_2.html |
| -signal, Common Emitter, Linear Amplifier Applications in Industrial and Commercial AM/FM Equipment Class AB be used in Linear Amplifiers to 1 GHz High Gain Ruggedness Bottom Side Source Eliminates DC Isolators Reducing Common Modem Inductances Lower Thermal Resistance High Efficiency MRF183 MRF183 MRF183 MRF183 (Flange to 1 GHz VHF/UHF Commercial Radio Transmitters to 1 GHz Can be used in Linear Amplifiers to 1 GHz High Gain Ruggedness Bottom Side Source Eliminates DC Isolators Reducing Common Modem Inductances www.datasheetarchive.com/files/motorola/design-n/rf/high1.htm |
Motorola | 25/11/1996 | 4.97 Kb | HTM | high1.htm |
| National P/N LM733C LM733C LM733C LM733C - Differential Video Amplifier Please enable Javascript in your browser. [Information as of 11-Sep-98] LM733C LM733C LM733C LM733C Differential Video Amplifier Generic P/N 733C Note: This -band video amplifier. The use of internal series-shunt feedback gives wide bandwidth with low phase distortion and high gain stability. Emitter-follower outputs provide a high current drive, low impedance compensation, make it a very useful circuit for memory element drivers, pulse amplifiers, and wide band linear www.datasheetarchive.com/files/national/htm/nsc03618-v3.htm |
National | 16/09/1998 | 6.43 Kb | HTM | nsc03618-v3.htm |
| National P/N uA592 - Differential Video Amplifier Please enable Javascript in your browser. [Information as of 11-Sep-98] uA592 Differential Video Amplifier Note: This device may be preliminary monolithic two-stage differential input, differential output video amplifier constructed using the Planar , and excellent gain stability. Emitter follower outputs enable the device to drive capacitive loads and all stages are current source biased to obtain high power supply and common mode rejection ratios www.datasheetarchive.com/files/national/htm/nsc04042-v2.htm |
National | 16/09/1998 | 6.21 Kb | HTM | nsc04042-v2.htm |
| National P/N uA592 - Differential Video Amplifier [Information as of 1-Apr-98] uA592 Differential Video Amplifier Contents General Description , differential output video amplifier constructed using the Planar Epitaxial process. Internal series shunt feedback is used to obtain wide bandwidth, low phase distortion, and excellent gain stability. Emitter obtain high power supply and common mode rejection ratios. The uA592, in the 14-lead version, offers www.datasheetarchive.com/files/national/docs/wcd00016/wcd016cd.htm |
National | 03/04/1998 | 4.94 Kb | HTM | wcd016cd.htm |
| 2-30 MHz CLASS AB LINEAR COMMON EMITTER HF/SSB VHF TRANSISTORS 27-88 MHz CLASSC, COMMON EMITTER LOW & MID -BAND FM 88-108 MHz CLASS C, COMMON EMITTER, FM BROADCAST 136-175 MHz CLASS C, COMMON EMITTER, HIGH BAND FM UHF TRANSISTORS 450-512 MHz CLASS C, COMMON EMITTER, FM MOBILE 450-512 MHz CLASS AB, COMMON EMITTER VHF EMITTER 500-1000 MHz CLASS C, COMMON BASE VHF TV/LINEAR TRANSISTORS 55 www.datasheetarchive.com/files/stmicroelectronics/stonline/psearch/fr03-v2.htm |
STMicroelectronics | 31/03/1999 | 79.93 Kb | HTM | fr03-v2.htm |
| , two error amplifiers, an adjustable oscillator, two dead-time comparators, undervoltage lockout circuitry, and dual common-emitter output transistor circuits. The uncommitted output transistors provide common-emitter output capability for each controller. The internal amplifiers exhibit a common www.datasheetarchive.com/files/texas-instruments/data/html/slvs024c.htm |
Texas Instruments | 31/05/1997 | 1.79 Kb | HTM | slvs024c.htm |
| gain Polysilicon emitter ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. Common emitter class-AB operation in output stages in bands 4 and 5 (470 to 860 MHz) television transmitter amplifiers (vision or sound). A broadband 150 W amplifier for Band IV & V TV Transmitters based on the BLV862 BLV862 BLV862 BLV862 and power amplifier fundamentals mrt-98 (01-Mar-98) RF transmitting transistor and power amplifier www.datasheetarchive.com/files/philips/pip/blv862_5.html |
Philips | 14/02/2002 | 9.39 Kb | HTML | blv862_5.html |