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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

chip die npn transistor

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schematic diagram 48 volt UPS

Abstract: 74 Series IC Manual transistor in the 700 Series has three modes of operation, NPN transistor, lateral PNP transistor, and substrate PNP transistor. Pin Function 1. NPN Base, PNP Collector 2. NPN Emitter 3. NPN Collector, PNP , Emitter NPN Transistor As an NPN transistor there are two separate bases and three emitters which you , 24mA (8mA per emitter) The base emitter junction of the NPN transistor makes an excellent 5.9 volt , ) 3 E C I SEMICONDUCTOR MflE D 30267^7 DDDDDb? TMb «ECIS T-M-3J EEI NPN Transistor hFE vs Ic (1
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73412

Abstract: NE64535 . 3-35 NPN Medium Power Microwave Transistor. 3-39 NPN Medium Power Microwave Transistor. 3-39 NPN Silicon High Speed Switching Transistor. 3-43 NPN Silicon High Speed Switching Transistor. 3-43 NPN Silicon High Speed Switching Transistor
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chip die npn transistor

Abstract: MM1007 COMPONENT PERFORMANCE Transistor Performance Small NPN, 1X, 2X Parameter Useful Current Range Current , devices fabricated on the same chip also allows precision circuits to be realized. Medium Current NPN , Macrochips. This device is fabricated with the same process steps used for the NPN transistor. This device , available for circuit designers Small NPN Cell Transistor (2x) g ra H w le °i P e l , to be used as a crossunder resistor. Small NPN Peripheral Transistor (1X) ^ Selected
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op amp 741 model PSpice

Abstract: pnp transistor 3609 interface circuits. The close match in transistor parameters for devices fabricated on the same chip also , NPN Cell Transistor (2x) B All array cells and some peripheral components use double base/double , resistor. |!5~lcj o © Small NPN Peripheral Transistor (1X) ° Selected peripheral NPN transistors have , Copyrighted By Its Respective Manufacturer Emitter Pinch Resistor/Small NPN Transistor E Each array cell contains a dual function structure consisting of a single base/single emitter small signal NPN transistor
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Darlington pair IC with 15 Amp

Abstract: disadvantages of capacitor , a PNP transistor occupies more die area to pass the same amount of current as an NPN transistor. Due , the sum of the VCE for the PNP transistor plus the VBE of each NPN transistor or 2VBE (NPN) + VCE(sat , the NPN darlington and PNP transistor composite or ILOAD/b3. The NPN darlington output stage is still , power NPN transistor, driven by a PNP transistor. The total dropout voltage is VBE (NPN) + VCE(sat)(PNP , structure, the base drive of the NPN pass transistor flows into the load and only the smaller bias current
Cherry Semiconductor
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PNP DARLINGTON SINK DRIVER 500ma

Abstract: 150 watt amplifier advantages and disadvantages transistor plus the VBE of each NPN transistor or to rise. In response, the voltage at the non inverting , is the load current divided by the gain of the NPN darlington and PNP transistor composite or ILOAD , . The pass device is a single power NPN transistor, driven by a PNP transistor. The total dropout , counterpart. In the composite structure, the base drive of the NPN pass transistor flows into the load and , adds cost to the system. Finally, a PNP transistor occupies more die area to pass the same amount of
Cherry Semiconductor
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Abstract: Pada Array Cell» Total Total Transistor* Restatane* Die Size (Mila) MMA 14 2 , OOllb'ifi T T-42-21 COMPONENT PERFORMANCE Transistor Performance Parameter Small NPN, 1X, 2X , devices fabricated on the same chip also allows precision circuits to be realized. Medium Current NPN , Macrochips. This device is fabricated with the same process steps used for the NPN transistor. This device , circuit designers Small NPN Cell Transistor (2x) B All array cells and some peripheral components -
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602858F PS2314

darlington pair transistor 1A

Abstract: darlington die the PNP transistor plus the VB E of each NPN transistor or 2V be (NPN) + VC E(sat) = 2V The inputs to , current is the load current divided by the gain of the NPN darlington and PNP transistor composite or I Lo , detailed discus sion.) This capacitor adds cost to the system. Finally, a PNP transistor occupies more die area to pass the same amount of current as an NPN transistor. Due to the fact that bipolar processes , structure. The pass device is a single power NPN transistor, driven by a PNP transistor. The total dropout
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darlington pair transistor 1A darlington die chip die npn transistor npn darlington transistor 150 watts LM109 CS-8129 CS-8121

2n5109

Abstract: 2n5109 transistor 1.14 TO-39 (REV: R1) R3 (23-June 2005) PROCESS Small Signal Transistor NPN - Silicon RF Transistor Chip CP214 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die , 2N5109 SILICON NPN RF TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically , Corp. 2N5109 NPN RF TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) BASE 3
Central Semiconductor
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2n5109 transistor transistor 2N5109 transistor marking code AL VCE-15V NPN transistor marking NY 200MH

MP4T80100

Abstract: MP4T801 M-Pulse Microwave 8 Volt, NPN Transistor Medium Power Features · · · MP4T80100 Die , ) Description The MP4T80100 series of our medium power high gain npn transistor has a power output of .5 watts , available in chip (MP4T80100), 200mil BEO (MP4T801510). Die size = 350 X 450 uM Bottom of die is , Volt, Mediam Power Transistor MP4T801 Series Electrical Specifications at 25°C Symbol , IC = 220 mA f = .9 GHz Power Output Class C Units GHz MP4T80100 Chip 6 typ
M-Pulse Microwave
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M-Pulse Microwave NPN transistor 5 watts
Abstract: M-Pulse Microwave 8 Volt, NPN Transistor Medium Power Die Outline MP4T80100 Features â , ) Description The MP4T80100 series of our medium power high gain npn transistor has a power output of .5 watts , available in chip (MP4T80100), 200mil BEO (MP4T801510). Die size = 350 X 450 uM Bottom of die is , MP4T801 Series 8 Volt, Mediam Power Transistor Electrical Specifications at 25°C Symbol , IC = 220 mA f = .9 GHz Power Output Class C Units GHz MP4T80100 Chip 6 typ -
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chip die npn transistor

Abstract: adjacent or in other places on the same chip. Large NPN Transistor The large NPN transistor, located , the collector of the NPN transistor. Sinker 2-8 + + - - - - + + - , depth between the base and emitter diffusions forms the actual base of the NPN transistor. For high , Substrate + - + + + + - + For the center layer of the NPN transistor, the base , + + Substrate + + + + NPN Transistor 2-12 The wafer is finished at this
Diodes
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10KO

Abstract: WUI6817157 permit practical values from 50n to 200KQ, on the same chip Die size optimized for narrow (.150" wide , 22 Metal pitch, ¿iM 14 Metal resistance, mQ/square 40,60s Small NPN transistor Vceo, mln 12 , they retain the flexible transistor geometries that allow most integrations to be accomplished with a , dedicated mask levels) Is available. The arrays feature four transistor geometries arranged in a macrocell matrix, combined with a wide range of diffused and ion implant resistor values. 1 GHz process (NPN Ft
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WUI6817157 10KO pnp 8 transistor array

allegro 3 PIN hall effect sensor

Abstract: allegro HALL EFFECT SENSOR transistor structures. Figure 4 shows cross-sections of both NPN and PMOS transistors. S G D P , of a PMOS (top) and an n NPN type BJT transistor (bottom) 296065-AN Allegro MicroSystems, Inc , IC chip Figure 7. A typical complete Hall device package, showing the mounted die and wire , generated by a south pole. A positive field will turn on the output transistor and connect the output to , output transistor is called the magnetic operating point, and is abbreviated BOP. When the field is
Allegro MicroSystems
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allegro 3 PIN hall effect sensor allegro HALL EFFECT SENSOR hall effect sensor 4 pin ic hall effect sensor 3pin active and passive electronic components difference circuit diagram of hall effect

Design and Fabrication of 5V Constant Voltage Power supply

Abstract: CS-8101 transistor is VIN.) Linear regulators typically use one of two types of short circuit protection on chip , fabrication processes. This results in larger on chip transistors and therefore larger die size, possibly in , drop PNP regulators. However, it is impractical to design on chip reverse battery protection for NPN and composite NPN/PNP regulators. NPN and NPN/PNP composite regulators rely on off chip reverse , or excessive load conditions. In a short circuit condition, not only is the pass transistor sourcing
Cherry Semiconductor
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Design and Fabrication of 5V Constant Voltage Power supply CS-8101 linear regulator application inductive power regulator PNP DARLINGTON SINK DRIVER 500ma electromechanical VOLTAGE REGULATOR

Alternator regulator

Abstract: feedback current limiting circuit impractical to design on chip reverse battery protection for NPN and composite NPN/PNP regulators. NPN and NPN/PNP composite regulators rely on off chip reverse battery protection in the form of a blocking , results in larger on chip transistors and therefore larger die size, possibly in bigger packages and all , load conditions. In a short circuit condition, not only is the pass transistor sourcing excessive current, the voltage across it is maximal. (Since VOUT is ground, the voltage across the transistor is
ON Semiconductor
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Alternator regulator feedback current limiting circuit overvoltage protections application note CS8101 SR005AN/D

Design and Fabrication of 5V Constant Voltage Power supply

Abstract: protection for NPN and composite NPN /PNP regulators. NPN and N PN /PNP composite regulators rely on off chip , , not only is the pass transistor sourcing excessive cur rent, the voltage across it is maximal. (Since V0(JT is ground, the voltage across the transistor is VIN .) Linear regulators typically use one of two types of short circuit protection on chip: constant current limit or foldback current limit. In a , transistor Q3 (VB E 3 =IB/R ) increases, turning on Q3. Q3's collector current is steered away from Q l
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linear regulator application

Abstract: protection for NPN and composite NPN/PNP regulators. NPN and NPN/PNP composite regulators rely on off chip , excessive load conditions. In a short circuit condition, not only is the pass transistor sourcing excessive current, the voltage across it is maximal. (Since VOUT is ground, the voltage across the transistor is VIN.) Linear regulators typically use one of two types of short circuit protection on chip: constant current , , the base voltage of transistor Q3 (VBE3 =IB/R) increases, turning on Q3. Q3Õs collector current is
Cherry Semiconductor
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laser diode spice modeling

Abstract: laser diode spice model simulation and reliability. Transistor Chip Use This is an abstract from Application Note AN-A005: Transistor Chip Use. Packaging, Shipment, and Storage Hewlett-Packard chips are supplied in two inch , . Each chip tray is enclosed in a plastic box to protect the die during shipping. Up to 300 chips can , produce a fillet around the die. 4. Using tweezers or a vacuum collet, pick up the chip that is to be die attached and orient it properly for placement on the mounting surface. 5. Place the chip on the
Hewlett-Packard
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laser diode spice modeling laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 INA-12 INA-12063 INA12 04E-16 43E-12 74E-12

transistor schottky model spice

Abstract: 7 segment SPICE Device Model R AN SISTO R S 2.1 NPN Transistor Properties and Usage. 3-11 2.2 Choosing the Collector Current. 3-11 2.3 NPN Transistor Vbe Matching. 3-12 2.4 NPN Transistor à Matching. 3-13 2.5 Low-Noise 2.6 NPN Transistor Saturation , 4.1 The Diode-Connected NPN Transistor. 3-17 4.2 Schottky Diodes
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transistor schottky model spice 7 segment SPICE Device Model SPICE thyristor model VJ900 D0011L3
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