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case BFX89

Catalog Datasheet MFG & Type PDF Document Tags

BFY90

Abstract: BFX89 BFX89 BFY90 WIDE BAND VHF/UHF AMPLIFIER · · · SILICON PLANAR EPITAXIAL TRANSISTORS TO-72 METAL CASE VERY LOW NOISE APPLICATIONS : · TELECOMMUNICATIONS · WIDE BAND UHF AMPLIFIER · RADIO COMMUNICATIONS The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using interdigitated , and Junction Temperature -65 to 200 °C COMSET SEMICONDUCTORS 1/4 BFX89 BFY90 THERMAL CHARACTERISTICS Symbol RthJ-C RthJ- Ratings Thermal Resistance, Junction ­ Case Thermal
Comset Semiconductors
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BFR99A 208MHZ case BFX89 BFY-90 BFY90 Data bfx89-bfy90 798m 100KH 202MHZ 798MHZ 806MHZ

BFY90

Abstract: BFX89 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BFX89 BFY90 WIDE BAND VHF/UHF AMPLIFIER , SILICON PLANAR EPITAXIAL TRANSISTORS , TO-72 METAL CASE , VERY LOW NOISE APPLICATIONS : t , A VCE -1 V for BFX89 for BFY90 VCE -1 V Mln. Typ. 20 25 20 150 150 125 f - 500 MHz for BFX89 for BFY90 1 1 1.1 GHz GHz for BFX89 for BFY90 1.3 1.2 1.4 , BFX89 for BFY90 lc-2mA f - 1 MHz VCE - 5 V for BFX89 for BFY90 for BFX89 lc-8mA Output
New Jersey Semiconductor
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TRANSISTOR BO 346

Abstract: BFX89 BFX89 NPN Transistor for antenna amplifiers BFX89 is an epitaxial NPN silicon RF transistor in a case 18A4 DIN 41876 (TO-72). The leads are electrically insulated from the case. This transistor , the GHz range. Type Order number BFX89 Q62702-F296 Weight approx. 0.4 g Dimensions in mm Maximum , ^'thJamb , BFX89 Dynamic characteristics (7"amb = 25 °C) Current-gain bandwidth product (/c= 2 mA; VCE = 5 V; f
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TRANSISTOR BO 346 Power Transisitor 100V 2A

bfy90

Abstract: BFX89 BFY90 SILICON NPN RF TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BFX89 and BFY90 are silicon NPN RF transistors designed for VHF/UHF amplifier, oscillator and converter applications. MARKING: FULL PART NUMBER TO-72 CASE MAXIMUM , =25°C unless otherwise noted) BFX89 SYMBOL TEST CONDITIONS MIN TYP MAX ICBO VCB=15V 10 BVCBO IC , 8.0 - dB R4 (13-March 2014) BFX89 BFY90 SILICON NPN RF TRANSISTORS ELECTRICAL
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500MH 200MH 800MH 205MH

BFY90

Abstract: BFX89 30E D â  7^2=1237 0030^5 T â  "T^MB" rrz SCS-THOMSON BFX89 _BFY90 S G S-TH0MS0N WIDE BAND VHF/UHF AMPLIFIER â  SILICON PLANAR EPITAXIAL TRANSISTORS â  TO-72 METAL CASE â  VERY LOW NOISE , BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using interdigitated base emitter , Current Gain lc = 2 mA Vce = 1 V for BFX89 for BFY90 lc = 25 mA VCE=1V 20 25 20 150 150 125 fT Transition Frequency VCE = 5 V f = 500 MHz lc = 2 mA for BFX89 for BFY90 lc = 25 mA for BFX89 for BFY90 1 1.3
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J BFY90 7R2T237 IS21J

BFY90

Abstract: BFX89 Central BFX89 BFY90 TM Semiconductor Corp. NPN SILICON RF TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR BFX89 and BFY90 are Silicon NPN Epitaxial Planar Transistors mounted in a , CODE: FULL PART NUMBER JEDEC TO-72 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL VCBO 30 UNITS , BFY90 MIN TYP MAX UNITS ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) BFX89 , 1.7 1.5 0.6 pF 0.8 pF R3 (20-March 2006) Central TM BFX89 BFY90
Central Semiconductor
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transistors Bfy90 NF23 RBE50

BFX89

Abstract: case BFX89 Dissipation de puissance maximale \ i \ S. i 1 i \ i i i. \ Case TO-72 â'" See outline , ) Weight : 0,7 g. Masse Connection IV is connected to case Le connexion M est reliée »u boîtier , /vn 'i.if/Of.i: r. wwamÅ"miwsiïû BFX89 STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES Tj = 25 , 2/7 686 BFX89 DYNAMIC CHARACTERISTICS (for large signals) j. = 25"C (Unless otherwise stated , de boîtier réunie à ta masse Connexion de boîtier non connectée 3/7 686 BFX89 USE CIRCUIT
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BFX89

Abstract: case BFX89 bbS3T31 0D1Ã223 0 â  BFX89 _Jy , rst-is" N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the case. The , shield lead (connected to case). Accessories: 56246 (distance disc). a r November 1986 649 This Material Copyrighted By Its Respective Manufacturer 11 N AMER PHILIPS/DISCRETE BFX89 SSE D A (^53131 , junction to ambient in free air Rthj-a = 880 K/W From junction to case Rth j-c = 580 K/W 650 November
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transistor IR 652 P S3T31 7Z65S79 T-31-15 S3131 7Z08812 7Z08857

2n5835

Abstract: 2n4957  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola , , PNP 6 2N5836, 2N5837 7 MRF511, MRF517, MRF525 8 2N2857. 2N3339, 2N5179, MRF501. MRF502 9 BFX89 , 5/2 1000 5.0/500 TO-72 BFX89 5/25 1200 6.5/500 TO-72 2N5109 15/50 1200 3.0*/200 TO , 200 MRF501 1.2 5.0 4.0 200 1.5 15" 200 15 50 200 MRF502 1.2 5.0 4.0 200 1.5 15" 200 15 50 200 BFX89 , high resolution colour video display monitors. Gain â'" BW h â c Case Device Type v(BR)CBO v
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2N3866 MRF207 2N5943 MRF911 BFR96 MRF544 2n5835 2n4957 MRF542 rf power package selection guide mrf502 transistor motorola 2N3866 2N3866A 2N5160 MM4018 2N3948 2N4427

BFY90

Abstract: BFX89 SILICON PLANAR NPN BFY90 BFX89 WIDE BAND VHF/UHF AMPLIFIERS The BFX 89 and BFY 90 are silicon planar epitaxial NPN transistors in Jedec TO-72 metal case, particularly designed for wide band , junction temperature -65 to 200 °C MECHANICAL DATA Dimensions in mm Shield lead connected lo case 12.7" ; f?T cpjai 9. «I {sim. to TO-72) 127 7/76 BFY90 BFX89 THERMAL DATA 'th j-case ^th j-amb , -1932 G-11133 129 BFY90 BFX89 Collector-base capacitance Noise figure G-1IM G-1M5 o 10 20 VCB(V) 0 5
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G-1932 89-1-c Transistor BFX 25

MRF542

Abstract: MRF545  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , , PNP 6 2N5836, 2N5837 7 MRF511, MRF517, MRF525 8 2N2857. 2N3339, 2N5179, MRF501. MRF502 9 BFX89 , 1.5 15" 200 15 50 200 BFX89 1.2 25 6.5 500 2.0 19 200 15 50 200 BFY90 1.4 25 5.0 500 2.0 21 200 15 , to those in medium and high resolution colour video display monitors. Gain â'" BW h â c Case
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MRF545 MRF543 BFR90 transistor high gain PNP RF TRANSISTOR transistor bfr96 motorola 2N4427 2N5583 2N4958 2N4959 2N6603 BFR90 MRF901

Tfk 880

Abstract: TFK 804 with case Normgehäuse Case 18 A4 DIN 41876 JEDEC TO 72 Gewicht â'¢ Weight max. 0,5 g Absolute , mA mA mW °C °C B 2/V.2. 519/0875 A 1 331 BFX89 Wärmewiderstände Min. Typ. Max. Thermal , Junction case Statische KenngröÃen DC characteristics 'amb 25 °C Kollektor-Basis-Durchbruchspannung , , /c = 2 mA, RQ = 50 Q, / = 500 MHz F 6,5 dB *) AQL = 0,65%, ') y = °'01' rP = °'3 ms 332 BFX89
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Tfk 880 TFK 804 TFK 802 S45C tfk bfx89 tfk 332

BFX89

Abstract: Transistor BFX 90 -SIEMENS AKTIENGESELLSCHAF BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876). The leads are electrically insulated from the case. This transistor is suitable for general , Q62702-F296 «0.45 r= I-*â'"13,5*1 - £ Approx. weight 0.4 g » Case 2JS41W Dimensions in mm , air RthJA £700 K/W Junction to case RthJC £400 K/W 2126 _ E-07 795 2SC D 0S3Sb05 0004750 0 WSIEtS 25C 047 50_D SIEMENS AKTIEN6ESELLSCHAF BFX89 Static characteristics (Tamb = 25 °C
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Transistor BFX 90 2sc 684 Q 371 Transistor BFX 514 000H75I

MRF965

Abstract: 2N5109 motorola  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola , , PNP 6 2N5836, 2N5837 7 MRF511, MRF517, MRF525 8 2N2857. 2N3339, 2N5179, MRF501. MRF502 9 BFX89 , -72 2N5179 6/5 900 4.5/200 TO-72 BFY90 5/2 1000 5.0/500 TO-72 BFX89 5/25 1200 6.5/500 TO , 5.0 4.0 200 1.5 15" 200 15 50 200 BFX89 1.2 25 6.5 500 2.0 19 200 15 50 200 BFY90 1.4 25 5.0 500 2.0 , â c Case Device Type v(BR)CBO v GHz mA Outline MRF544 120 1.4 400 TO-39 MRF545* 100 1.2 400 TO
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MRF965 2N5109 motorola motorola 2N5179 2n6603 transistor MRF586 BFY90 MOTOROLA MRF904 2N6604 BFR91 MRF914 MRF961 MRF962

2N5109 motorola

Abstract: BFY90 MOTOROLA  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of , , PNP 6 2N5836, 2N5837 7 MRF511, MRF517, MRF525 8 2N2857. 2N3339, 2N5179, MRF501. MRF502 9 BFX89 , 5/2 1000 5.0/500 TO-72 BFX89 5/25 1200 6.5/500 TO-72 2N5109 15/50 1200 3.0*/200 TO
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MM4049 bfr91 motorola 2n4427 MOTOROLA macro-X ceramic 317A-01 MRF511 MOTOROLA BFW92A MRF581 MRF587 2N3959 2N3960

2n4427 MOTOROLA

Abstract: MRF536  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these , , PNP 6 2N5836, 2N5837 7 MRF511, MRF517, MRF525 8 2N2857. 2N3339, 2N5179, MRF501. MRF502 9 BFX89
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MRF536 Y parameters of transistors 2N3866 MOTOROLA s parameters motorola rf Power Transistor MRF559 MRF580 MRF571 MRF572 MRF534

BFY90

Abstract: case BFX89 Small Signal RF Transistors TO-39 & TO-72 Cases TO-39 TYPE NO. DESCRIPTION VCBO VCEO VEBO (V) (V) (V) ICBO @ VCB (µA) (V) hFE *TYP TO-72 @ IC @ VCE VCE (SAT ) @ IC fT Cob (mA) (V) (V) (mA) (MHz) (pF) NF CASE (dB) *TYP *TYP MIN MIN MIN MIN MAX MAX MIN MAX MAX BFX89 NPN RF AMPL/SWITCH 30 15 2.5 0.01 15 20 150 2.0 1.0 - - 1200 1.7 4.0 TO-72 BFY90 NPN RF AMPL/SWITCH 30 15
Central Semiconductor
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CM4957 CM5160 CM5583 CM5943 TO-39 CASE 2006W

TO-206A

Abstract: BFY 83 MOTOROLA SC CXSTRS/R F) MbE D b3fci72S4 G O T m a a T 4 MOTb SEMICONDUCTOR TECHNICAL DATA MOTOROLA BFX89 BFY90 T h e R F L ine fT = 2 .0 G H z @ 1 0 m A NPN SILICON , b o STYLE 10: PIN 1 EMITTER 2 6ASE 3. COLLECTOR 4 CASE NOT?: ALL RULES AND NOTES ASSOCIATED WITH , MOTOROLA SC (XSTRS/R F) 4b E D b3b72S4 b «flOTb BFX89, BFY90 E L E C T R I C A , BFX89, BFY90 T ~ 3 \'l5 Ic. COLLECTOR CURRENT imA) vCB, C0 LL£CT0 fl-8AS£ VOLTAGE
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TO-206A BFY 83 BFY90T BFY 99

2N5179

Abstract: high gain PNP RF TRANSISTOR  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , , PNP 6 2N5836, 2N5837 7 MRF511, MRF517, MRF525 8 2N2857. 2N3339, 2N5179, MRF501. MRF502 9 BFX89 , 1.5 15" 200 15 50 200 MRF502 1.2 5.0 4.0 200 1.5 15" 200 15 50 200 BFX89 1.2 25 6.5 500 2.0 19 200 , display monitors. Gain â'" BW h â c Case Device Type v(BR)CBO v GHz mA Outline MRF544 120 1.4
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2N3866 MOTOROLA 2N2857 MOTOROLA motorola european master selection transistors for uhf oscillators RF Transistor Selection Selection guide of Transistors 2N5032 2N5031 2N5829 317D-01

2N5109 motorola

Abstract: MRF536  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola , , PNP 6 2N5836, 2N5837 7 MRF511, MRF517, MRF525 8 2N2857. 2N3339, 2N5179, MRF501. MRF502 9 BFX89 , 5/2 1000 5.0/500 TO-72 BFX89 5/25 1200 6.5/500 TO-72 2N5109 15/50 1200 3.0*/200 TO , 500 70 14* 500 17 200 2.50 tGrounded Emitter TO.-39 *Typ "V(BR)CBO Plastic â'" SOE â'" Case 317-01 , Ceramic â'" SOE â'" Case 244A-01, 303-01 Gain - BW Noise Figure Gain Maximum Ratings n 'C NF f 'C
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MRF931 BFR90 application 244A-01 transistor MRF536 MOTOROLA MASTER SELECTION GUIDE RF 317-01/317A-01 MRF2369 2N5947
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