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DO1608C-104 C Coilcraft Inc OBSOLETE See web site for new part number. Part was always RoHS compliant; terminals never contained lead. ri Buy
CMC104K Honeywell Sensing and Control CMC Series, 4 kOhms, 10.0 W, Fixed, Wirewound Resistor ri Buy
LTC1041CN8 Linear Technology LTC1041 - BANG-BANG Controller; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C ri BuyFREE Buy

c104 TRANSISTOR

Catalog Datasheet Type PDF Document Tags
Abstract: and a low cutoff frequency fL as follows: fL =-1- 27rC103 R101 (4) C104, C105, C106. Capacitors , character- istic; however, C104 determines the high cutoff frequency fH. Refer to the frequency characteristic and determine C104. Cm is unnecessary at R102 = (5) C107 Output coupling capacitor. A low cutoff , RL = 8i2. (8) R102 Determines the Idling Current (lidle) in power transistor at no signal. Iidle is ... OCR Scan
datasheet

3 pages,
110.2 Kb

R101 C104 C106 Hitachi Scans-001 R102 r-102 c102, transistor transistor c102 C107 TRANSISTOR C107 c107 TRANSISTOR TRANSISTOR C103 transistor c106 HA1306 HA1306W QP-10T HA1306W abstract
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Abstract: DIE No. NPN Small Signal TRANSISTOR DIE No. MAXIMUM RATINGS ( T a = 2 5 ° C Free Air) Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol VcEO VcBO V lc ebo C-104 DESCRIPTION EPITAXIAL PLANAR NPN SILICON TRANSISTOR Value 20 30 3 25 SST (SOT23) 200* 200 Unit V V V mA mW °C BFS20 BFS20 : 150mW Collector Current Continuous Total Power Dissipation r ° , < s ii 74 < o C-104 IQOi/A / (mA) ^ " Ta = 25°C 500 T a = 2 5 'C 9 0 ... OCR Scan
datasheet

2 pages,
74.47 Kb

C104 "Die No." TRANSISTOR c104 c104 TRANSISTOR datasheet abstract
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Abstract: BIPOLAR TRANSISTOR PARTS LIST ALPHA-NUMERIC INDEX OF S S T /S M T (SOT-23), UMT (SOT-323), MPT (SOT-89) AND TO-92 PACKAGED BIPOLAR TRANSISTORS PART NUMBER DIE No. PAGE PAGE PART NUMBER PAGE 61 37 76 76 61 61 70 70 41 70 41 41 65 65 34 37 37 61 61 61 61 34 34 86 86 80 80 61 61 61 61 61 61 37 37 37 , C22 C22 C22 A32 A32 A32 C33 C104 C22 C104 C31 C31 A31 A31 C37 A38 C37 A38 C31 A31 A32 A32 C22 C22 A32 , C22 C22 A32 C31 C31 A31 B11 C22 C31 C31 A31 A31 C31 A31 C37 A38 D25 D69 B25 B25 C22 C104 C31 92 59 ... OCR Scan
datasheet

2 pages,
87.26 Kb

transistor PN2907 2n4401 C31 A32 SOT23 2n3860 transistor MMST8598 MPS-A27 SST6428 ssta29 TRANSISTOR c104 TRANSISTOR a31 2N3904 A32 2N3904 b11 2n3904 c33 2N3904 A31 datasheet abstract
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Abstract: voltage level rises, typically at 50V the Triac is turned ON as a result of transistor Q1 biased ON via , ,transistor Q2 is biased ON via resistor ladder R6,R7 and zener DZ2 which pulls low the R4 and DZ1 connection switching OFF transistor Q1 in-turn switching Triac OFF. At this point the MK-series pulls out of voltage , when the mains as dropped below 50VAC 50VAC transistor Q2 and Q4 are biased OFF turning Triac ON allowing , capacitor 390uF 2Ì0V . C103 o 390uF 26OV C104 it 4.7uF (* ) 400V C105 i< lOOuF (* ) 16V C106 Film ... OCR Scan
datasheet

18 pages,
1177.34 Kb

12 volts Voltage Doubler c102, transistor C103 M c104 TRANSISTOR transistor d102 TRANSISTOR C107 C105 Diode zener d3sb60 85 C105 Diode TRANSISTOR c104 triac C105 c107 TRANSISTOR equivalent c102 TRANSISTOR datasheet abstract
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Abstract: BSS138 BSS138 www.softecmicro.com HB YELLOW LED2 LD103 LD103 RED LED1 LD102 LD102 C104 100nF , Capacitor 100pF X7R 50V 0805 C101, C103, C104, C202, C203, C205, C207, C302, C303, C306, C308, C310 , Switches 2 Pushbutton Switch SMD 1 NTC Thermistors 10K 10% 0805 7 NMOS Transistor BSS138 BSS138 SOT23 2 PMOS Transistor IRLML6302 IRLML6302 SOT23 SW101 SW101, SW102 SW102 Augat, FSM4JSMA Thermistors R101 ... Original
datasheet

6 pages,
58.33 Kb

c103 TRANSISTOR DATA c101 TRANSISTOR CRYSTAL SMD 12MHZ walsin ceramic capacitor smd 0805 smd diode c319 transistor c301 TRANSISTOR C309 SMD 78m05 SMD resistors R103 J103 transistor 3 pin C312 diode 0805B104K500CT DEMO9RS08KA2 DC01098 DEMO9RS08KA2 abstract
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Abstract: I F K ® ® y © ¥ © Ä T T M ,® ® MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP N U M BER -Jfclitron Devices. Inc. PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * (FORMERLY 71) CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available) Also available on: MOLY PEDESTAL Size: .140" Diameter (3.56mm) Thickness: .010" (0.25mm) BeO PEDESTAL , I c = 1A, V cE = 5V, 20-80, 40-120 *The respective NPN complement is chip number 184. C-104 ... OCR Scan
datasheet

2 pages,
78.63 Kb

2N4906 c105 TRANSISTOR c104 TRANSISTOR TRANSISTOR c104 TRANSISTOR c105 npn TRANSISTOR c105 datasheet abstract
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Abstract: -¿/outran MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc. PIMP EPITAXIAL PLANAR POWER TRANSISTOR * * (FORMERLY 71) Emitter: .010" x .OSO" (0.25mm x 1.27mm) .009" x .042" (0.23mm x 1.07mm) CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available) Also available on: MOLY PEDESTAL Size: .140" Diameter , at Iq = 1A, VcE = 5V. 20-80. 40-120 *The respective NPN complement is chip number 184. C-104 ... OCR Scan
datasheet

2 pages,
260.59 Kb

2N3720 2N4901 SDT3329 SDT3322 2N4906 s 271 5A c104 TRANSISTOR TRANSISTOR c105 c105 TRANSISTOR TRANSISTOR c104 npn TRANSISTOR c105 datasheet abstract
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Abstract: Inductor Inductor Inductor Transistor/FET Transistor/FET Fuse Resistor Resistor Resistor Resistor , , C67,C84,C91,C103,C105,C106 C23 C35 C40 C60 C61 C85,C92,C104 FB1-FB4 J3 J1 J2 J4 J5 J6 J7 ... Original
datasheet

1 pages,
12.05 Kb

transistor c102 2X20RCPT C123-C126 transistor c119 t410 TRANSISTOR TRANSISTOR c104 c105 TRANSISTOR transistor c128 transisTOR C123 c103 TRANSISTOR c101 TRANSISTOR TRANSISTOR C107 c106 TRANSISTOR BAV99LT1 BAV99LT1 BAV99LT1 abstract
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Abstract: Transistor 8 W, 700 ­ 2200 MHz Description The PTFA220081M PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz. This LDMOS transistor offers , MHz_bdin_06-03-2010 3 4 C106 5.6 pF C104 16 pF C107 16 pF Reference circuit input schematic for = , RF_IN C105 C106 C104 RF_OUT C201 C107 PTFA220081M PTFA220081M_01_CUS 960 MHz RO4350 RO4350, .020 , Assembly Information DUT PTFA220081M PTFA220081M LDMOS Transistor PCB LTN/PTFA220081M LTN/PTFA220081M­9 0.508 mm ... Original
datasheet

17 pages,
562.71 Kb

TRANSISTOR C103 TRANSISTOR c105 TL208 c104 TRANSISTOR TL103 TL219 TL214 ATC100A680JW150X TRANSISTOR c104 ATC100A6R2CW150X c102 TRANSISTOR c103 TRANSISTOR DATA PTFA220081M TRANSISTOR SMD w2 PTFA220081M abstract
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Abstract: Transistor 8 W, 700 ­ 2200 MHz Description The PTFA220081M PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz. This LDMOS transistor offers , C104 16 pF C107 16 pF Reference circuit input schematic for = 920 ­ 960 MHz TL205 TL205 TL204 TL204 , S5 C202 R106 S3 R104 S2 R107 R105 R201 L1 DUT RF_IN C105 C106 C104 , LDMOS Transistor PCB LTN/PTFA220081M LTN/PTFA220081M­9 0.508 mm [.020"] thick, er = 3.48 Rogers 4350, 1 oz. ... Original
datasheet

17 pages,
1068.48 Kb

TRANSISTOR SMD w2 transistor c111 potentiometer 2K TRANSISTOR C107 ATC100A100CW150X c105 TRANSISTOR p 4712 tl113 c103 TRANSISTOR equivalent TRANSISTOR c102 transistor C103 capacitor marking c106 NFM18PS105R0J3 PTFA220081M PTFA220081M abstract
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Datasheet Content (non pdf)

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Over 1.1 million files (1986-2015): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
No abstract text available
www.datasheetarchive.com/download/43632519-124810ZC/wlan.zip (WLAND.BOM)
Harris 15/08/1997 132.27 Kb ZIP wlan.zip
output stage is desabled with transistor T2. To avoid high transient currents when switching from capacitance C O of the output transistor of the record amplifier (col- lector to ground capacitance @ Preamplfier - DC offset compensation circuit - The switching transistor which shunts the record current 14 15 16 J3 C104 22nF C102 22nF C103 22nF C101 22nF JP2 6 R104 1k W R107 100R
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1108-v1.htm
STMicroelectronics 25/05/2000 40.08 Kb HTM 1108-v1.htm
record amlpifier output stage is desabled with transistor T2. To avoid high transient currents when the output transistor of the record amplifier (col- lector to ground capacitance @ 15pF) (see Fig- ure Preamplfier - DC offset compensation circuit - The switching transistor which shunts the record current output : Signal Ground 9 10 1 2 3 4 5 7 8 11 12 13 14 15 16 J3 C104 22nF C102 22nF C103 22nF C101 22nF JP2 6 R104
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1108-v2.htm
STMicroelectronics 14/06/1999 38.15 Kb HTM 1108-v2.htm
record amlpifier output stage is desabled with transistor T2. To avoid high transient currents when the output transistor of the record amplifier (col- lector to ground capacitance @ 15pF) (see Fig- ure Preamplfier - DC offset compensation circuit - The switching transistor which shunts the record current output : Signal Ground 9 10 1 2 3 4 5 7 8 11 12 13 14 15 16 J3 C104 22nF C102 22nF C103 22nF C101 22nF JP2 6 R104
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1108.htm
STMicroelectronics 02/04/1999 38.19 Kb HTM 1108.htm
transistor T2. To avoid high transient currents when switching from record mode to playback mode, T2 is parasitic capacitance C H of the heads with the parasitic capacitance C O of the output transistor of the offset compensation circuit - The switching transistor which shunts the record current output (I OUT ) in : Signal Ground 9 10 1 2 3 4 5 7 8 11 12 13 14 15 16 J3 C104 22nF C102 22nF C103 22nF C101 22nF JP2 6 R104
www.datasheetarchive.com/files/stmicroelectronics/books/ascii/docs/1108.htm
STMicroelectronics 25/05/2000 42.83 Kb HTM 1108.htm
No abstract text available
www.datasheetarchive.com/download/52872592-996090ZC/ug019.zip (XlvdsBoardRev02Parts.csv)
Xilinx 08/10/2003 3632 Kb ZIP ug019.zip
detection drives a softswitch : a MOS transistor which is used in its variable R DS ON area (Fig- the TEA5750 TEA5750 TEA5750 TEA5750 application. Remark : The group delay compensation circuit (Q102, C104, L102, R107
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1110-v1.htm
STMicroelectronics 25/05/2000 47.9 Kb HTM 1110-v1.htm
generated by the error detection drives a softswitch : a MOS transistor which is used in its variable R DS circuit (Q102, C104, L102, R107) is very often inserted in the interface circuit but is not specially
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1110-v2.htm
STMicroelectronics 14/06/1999 46.06 Kb HTM 1110-v2.htm
generated by the error detection drives a softswitch : a MOS transistor which is used in its variable R DS circuit (Q102, C104, L102, R107) is very often inserted in the interface circuit but is not specially
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1110.htm
STMicroelectronics 02/04/1999 46.1 Kb HTM 1110.htm
generated by the error detection drives a softswitch : a MOS transistor which is used in its variable R DS circuit (Q102, C104, L102, R107) is very often inserted in the interface circuit but is not specially
www.datasheetarchive.com/files/stmicroelectronics/books/ascii/docs/1110.htm
STMicroelectronics 25/05/2000 50.25 Kb HTM 1110.htm
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