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Part Manufacturer Description Datasheet BUY
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

c s 13003 TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

E 13003 TRANSISTOR

Abstract: c s 13003 TRANSISTOR DC 0.1 0.05 ^ssb*`25°C s Fig-7 TE 13002TE 13003 Q01 10 100 V fcE- «« «134 « , current Collector peak current Base current Total power disspation T ' case S 2 5 ° C Junction temperature , ^EBO *c ^ C M T E 13002 300 600 9 1,5 3 0.75 0.75 38 150 - 6 5 .+ 1 5 0 T E 13003 400 700 V V V A A A , = 150°C, Vr 4S0 Lc. = 60 0 V · VCE = 70 0 V TE 13002 TE 13003 TE 13002 TE 13003 'CES 'cES , Collector-emitter breakdown voltage /c = 100 mA, i.c = 125 mH TE 13002 Fig. 1,2 TE 13003 Emitter-base breakdown
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E 13003 TRANSISTOR c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T-33-II 0IN41 I3-75 T-33-11 15A3DIN

13003 TRANSISTOR

Abstract: REGULATOR 13003 . B 15 -19 C 18-22 E 21-25 F 24-30 MARKING CDB 13003 CDC 13003 CDE 13003 , DIM 10.8 2.4 2.7 0.7 0.9 E 1 10.5 D S 7.8 C B 7.4 B P , Manufacturer CD13003 NPN SILICON POWER TRANSISTOR TO126 Plastic Package EC B Applications , o Derate Above 25 C Tj, Tstg Operating And Storage Junction Temperature Range THERMAL , 89 275 o Derate Above 25 C Power Dissipation @ Tc=25 o C VALUE 600 400 9.0 1.5 3.0
Continental Device India
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13003 TRANSISTOR REGULATOR 13003 x 13003 TRANSISTOR transistor cd 13003 13003 application notes 13003 TO 126 PACKAGE C-120 CD13003R

13003 TO-92

Abstract: PC 13003 TRANSISTOR 13003 A B 15-19 CSL 13003 B TYP MAX UNIT 1.1 µs 0.7 4.0 µs µs C E F 18-22 21-25 24-30 CSL 13003 C CSL 13003 E CSL 13003 F , SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSL13003 TO-92 Plastic , * Pulse Test: PW=300µ s, Duty Cycle=2% * Pulse Test: Pulse Width=5ms, Duty Cycle=10% CSL13003Rev261103E , EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSL13003 TO-92 Plastic Package E CB
Continental Device India
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13003 TO-92 PC 13003 TRANSISTOR PC 13003 13003 TO 92 PACKAGE TRANSISTOR 318 13003 all transistor 13003 CSL13003261103E

13002

Abstract: 13003 150 O -55~+150 O C C G S P FORM A IS AVAILABLE SEMTECH ELECTRONICS LTD , =40mA 13003 VBE(sat) - - 1.1 V Base-Emitter Saturation Voltage G S P FORM A IS AVAILABLE , SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron , 13003 Unit Collector Base Voltage VCBO 600 V Collector Emitter Voltage VCEO 400 , =1mA 13002 at IC=5mA 13003 Collector Emitter Breakdown Voltage at IC=5mA Emitter Base Breakdown
Semtech Electronics
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13002 13003 transistor 13003 transistor 13003 A 13002 and 13003 power transistor transistors 13003

13002 TRANSISTOR

Abstract: transistor 13002 150 O -55~+150 O C C G S P FORM A IS AVAILABLE SEMTECH ELECTRONICS LTD , SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron , 13003 Unit Collector Base Voltage VCBO 600 V Collector Emitter Voltage VCEO 400 , =5mA 13003 Collector Emitter Breakdown Voltage at IC=5mA Emitter Base Breakdown Voltage at IE=1mA Collector Cutoff Current at VCB=600V 13002 at VCB=700V 13003 Emitter Cutoff Current at VEB
Semtech Electronics
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BR 13003 13002 power transistor 13003 TRANSISTOR npn c s 13002 TRANSISTOR w 13002 g 13003

TR 13003 transistor

Abstract: F 13003 SILICON POWER TRANSISTOR TO126 Plastic Package EC B ELECTRICAL CHARACTERISTICS (Ta=25 deg C , ship any of the groups according to production availability. MARKING C A 13003 C B 13003 µs 0.15 C 18-22 E 21-25 F 24-30 C C 13003 C E 13003 C F 13003 *Pulse Test , 0.7 0.9 E 1 10.5 D S 7.8 C B 7.4 B P MAX A N MIN 2.25 , Manufacturer C13003 NPN SILICON POWER TRANSISTOR TO126 Plastic Package EC B Applications
Continental Device India
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TR 13003 transistor F 13003 B 13003 TR 13003 E13003 X 13003 C13003R

X 13003

Abstract: F 13003 (off)=5V, tc tfi TC=100ºC A B C 11 -16 15 -19 18-22 0.75 0.15 E F 21-25 24-30 C A 13003 C E 13003 tsv C B 13003 C C 13003 µs µs C F 13003 *Pulse Test:- PW , 0.9 E 2.25 TYP. F S 1 7.8 C B 7.4 B P MAX A N MIN 0.49 , C13003 NPN SILICON POWER TRANSISTOR TO126 Plastic Package Applications Suitable for Lighting , 5.0 1.0 UNIT V V mA mA mA Page 1 of 4 C13003 NPN SILICON POWER TRANSISTOR TO126
Continental Device India
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13003 d cd 13003 13003 L 13003 power transistor 13003 TO 126

W 13003 TRANSISTOR

Abstract: 13003 availability. B 15 -19 C 18-22 E 21-25 F 24-30 MARKING CDB 13003 CDC 13003 CDE 13003 CDF 13003 CDA 13003 *Pulse Test:- PW=300µs, Duty Cycle=2% Continental Device India , A C DIM 10.5 10.8 2.4 2.7 D 0.7 0.9 E 2.25 TYP. F S 1 , Certified Manufacturer CD13003 NPN SILICON POWER TRANSISTOR TO126 Plastic Package Applications , SILICON POWER TRANSISTOR TO126 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless
Continental Device India
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W 13003 to126

PC 13003 TRANSISTOR

Abstract: x 13003 TRANSISTOR production availability. 10-16 MARKING CSL 13003 A B 15-19 CSL 13003 B TYP MAX UNIT 1.1 µs 0.7 4.0 µs µs C E F 18-22 21-25 24-30 CSL 13003 C , SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSL13003 TO-92 Plastic , UNIT V V mA mA mA * Pulse Test: PW=300µ s, Duty Cycle=2% * Pulse Test: Pulse Width=5ms, Duty , V V V V NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR
Continental Device India
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transistor 13003 k NPN transistor 13003 B/PC 13003 TRANSISTOR

F 13003

Abstract: TR 13003 transistor (off)=5V, tc tfi TC=100ºC A B C 11 -16 15 -19 18-22 0.75 0.15 E F 21-25 24-30 C A 13003 C E 13003 tsv C B 13003 C C 13003 µs µs C F 13003 *Pulse Test:- PW , 0.9 E 2.25 TYP. F S 1 7.8 C B 7.4 B P MAX A N MIN 0.49 , SILICON POWER TRANSISTOR TO126 Plastic Package Applications Suitable for Lighting, Switching , 5.0 1.0 UNIT V V mA mA mA Page 1 of 4 C13003 NPN SILICON POWER TRANSISTOR TO126
Continental Device India
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13003 TRANSISTOR 126 package PIN DETAILS 13003 TRANSISTOR npn TR 13003 A ISO/TS16949

x 13003 TRANSISTOR

Abstract: transistor cd 13003 =0.2A, VBE(off)=5V, tc tfi TC=100ºC A B C 11 -16 15 -19 18-22 0.75 0.15 E F 21-25 24-30 C A 13003 C E 13003 tsv C B 13003 C C 13003 µs µs C F 13003 *Pulse Test:- , 0.9 E S 7.8 C B 7.4 B P MAX A N MIN 2.25 TYP. F 1 0.49 , C13003 NPN SILICON POWER TRANSISTOR TO126 Plastic Package Applications Suitable for Lighting , 5.0 1.0 UNIT V V mA mA mA Page 1 of 4 C13003 NPN SILICON POWER TRANSISTOR TO126
Continental Device India
Original

SR 13003 b

Abstract: transistor SR 13003 availability. MARKING ton VCC=125V, IC=1A, IB1=0.2A, IB2=0.2A A 11-16 CDT 13003 A XY B 15-19 CDT 13003 B XY C 18-22 CDT 13003 C XY E 21-25 F 24-30 CDT 13003 E XY CDT 13003 F XY X= Year of Manufacturer Code Y= Month Code *Pulse Test:- PW=300µs, Duty Cycle , SILICON POWER TRANSISTOR CDT13003 TO-220 Plastic Package Applications Suitable for Lighting , Sheet Page 1 of 4 NPN SILICON POWER TRANSISTOR CDT13003 TO-220 Plastic Package ELECTRICAL
Continental Device India
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SR 13003 b transistor SR 13003 SR 13003 TRANSISTOR SR 13003 SR 13003 D SR 13003 K CDT13003R 230306D

CDT13003

Abstract: cdt 13003 . MARKING ton VCC=125V, IC=1A, IB1=0.2A, IB2=0.2A A 11-16 CDT 13003 A XY B 15-19 CDT 13003 B XY C 18-22 CDT 13003 C XY E 21-25 F 24-30 CDT 13003 E XY CDT 13003 F , SILICON POWER TRANSISTOR CDT13003 TO-220 Plastic Package Applications Suitable for Lighting , 4 NPN SILICON POWER TRANSISTOR CDT13003 TO-220 Plastic Package ELECTRICAL , -220 Plastic Package TO-220 Plastic Package B C E DIM MIN MAX 16.51 A 14.42 B 9.63 10.67 3.56
Continental Device India
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cdt 13003 13003 A d 13003 x 13003 h 13003A

transistor sw 13003

Abstract: sw 13003 Applications Electronic lam p ballast circuits Sw itch-m ode pow er supplies T D 1 3002 · T D 13003 1 B a s e 2 C o l le c t o r 3 E m it te r T D 1 3 0 0 2 · T D 1 3 0 0 3 -S M D 1 B a s e 2 C o l le c t , ollector-em itter voltage Test C onditions type TD 13002 TD 13003 T D 13002 TD 13003 E m itter-base voltage C , V Vci; 3 Pulses Y = o .i y 100 mQ 1, = 10 ms F ig u re I. T e s t c ir c u it fo r V ( |jR , 0.1 lc (1) Fast electronic switch to - to ff F ig u re 2. T e s t c ir c u it f o r s w itc h
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transistor sw 13003 sw 13003 Sw 13003 c transistor x 13002 T 13003 transistor E 13003 b TRANSISTOR TD13002 TD13003 T0252

PC 13003 TRANSISTOR

Abstract: PC 13003 TRANSISTOR circuit . 10-16 MARKING CSL 13003 A B 15-19 CSL 13003 B TYP MAX UNIT 1.1 ms 0.7 4.0 ms ms C E F 18-22 21-25 24-30 CSL 13003 C CSL 13003 E CSL 13003 F TO-92 Plastic Package DIM A B C D E 1 K 2 F G H D 3 D SEC , TRANSISTOR Applications Suitable for Lighting, Switching Regulator and Motor Control E ABSOLUTE MAXIMUM , =2% s, * Pulse Test: Pulse Width=5ms, Duty Cycle=10% MIN 600 400 10 8.0 4.0 TYP MAX
Rectron Semiconductor
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PC 13003 TRANSISTOR circuit PC 13003 TRANSISTOR application 13003 F 13003 application

13003 TO-92

Abstract: PC 13003 TRANSISTOR 13003 A B 15-19 CSL 13003 B TYP MAX UNIT 1.1 µs 0.7 4.0 µs µs C E F 18-22 21-25 24-30 CSL 13003 C CSL 13003 E CSL 13003 F , PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSL13003 TO-92 Plastic Package E , * Pulse Test: PW=300µ s, Duty Cycle=2% * Pulse Test: Pulse Width=5ms, Duty Cycle=10% CSL13003Rev261103E , EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSL13003 TO-92 Plastic Package E CB
Continental Device India
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13003F 13003 TRANSISTOR PC 13003 TRANSISTOR 13003 transistor TO-92 CSL13003R 261103E

transistor 13003d

Abstract: 13003D ELECTRONIC 13003 HIGH VOLTAGE POWER TRANSISTOR FEATURES: High Voltage Capability High , -08 ELECTRONIC 13003 HIGH VOLTAGE POWER TRANSISTOR MYBOL Min Nom Max A 9.0 10 11 , TRANSISTOR SMYBOL Min Nom Max A 9.0 10 11 B 7.05 8.0 8.05 C 2.4 , TRANSISTOR SMYBOL Min Nom Max A 9.0 10 11 B 7.05 8.0 8.05 C 2.4 , : 2343 0181-5 Unit V V V A A A V V uS P1/3 REV:A Jan-08 ELECTRONIC 13003 HIGH
Micro Electronics
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transistor 13003d 13003D 13003a TRANSISTOR 13003C transistor 13003F 13003c TRANSISTOR

REGULATOR sw 13003

Abstract: transistor sw 13003 Ordering number : ENA1219 NMP13003(13003 series) SANYO Semiconductors DATA SHEET NMP13003 (13003 series) Features · · · · NPN Triple Diffused Planar Silicon Transistor Switching , NMP13003(13003 series) 7 5 hFE - IC VCE=0.7V Ta=120°C 7 5 hFE - IC VCE=5V Ta=120°C 3 , 7 5 3 s 0 s s 1m DC 10 op er ati on m s 0.001 0.1 Ta=25°C Single pulse 2 , . Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter
SANYO Electric
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REGULATOR sw 13003 SW 13003 A etc 13003 A12194 PW300 A1219-4/4

13003 transistor SMD

Abstract: transistor smd XH - Collector Current (A) Figure 5. VcEsatVS.lB Figure 8. V b e v s . I c at « 3 § H c 5 , Transistor Features · · · · HIGH SPEED technology Glass passivation Very short switching times Very low , Applications Electronic lamp ballast circuits Switch-mode power supplies 94 8965 TD13002 · T D 13003 1 , Maximum Ratings Tease = 25°C, unless otherwise specified Test Conditions Paiametei Collector-emitter voltage Type TD13002 TD13003 TD 13002 TD 13003 Emitter-base voltage Collector current Collector peak
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13003 transistor SMD transistor smd XH d13003 13003 NPN Transistor features al 13003 electronic ballast 13003 TD13003-SM

PC 13003 TRANSISTOR

Abstract: SH 13003 K SH 13003 NPN SILICON TRANSISTOR D-PAK High Voltage Power Transistor D-PACK For surface , V V V V V pF MHz /¿S fr tON tSTG tF pS / iS ' Pulse T e s t: Pulse Width=5ms, Duty C y , Collector Dissipation (Tc=25° C) Junction Temperature Storage Temperature Symbol VCBO VCEO V e bo Rating , c c 1. Base 2. Collector 3. Emitter ELECTRICAL CHARACTERISTICS (Tc=25" C) Characteristic * Collector Emitter Breakdow n Voltage Emitter Cutoff Current * D C Current Gain * Collector Emitter
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SH 13003 SH 13003 TRANSISTOR 13003 npn voltage REGULATOR 13003 e 13003 SH 13003 npn
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