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Part : LC8783M4PA-5BV0-E Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 500 Best Price : - Price Each : -
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bv0e

Catalog Datasheet MFG & Type PDF Document Tags

bv0T

Abstract: bv0e Cells int. Cells Page BV0T BVDT BV0E BVDE BV08 BVD8 BV07 BVD7 BV0HD BVDHD OUTPUT BUFFER
NEC
Original
bv0T bv0e NEC L213 L462 FO09B2 f57a PD6782X PD6783X A11957XJ2V0UM00

se617

Abstract: SE641 50k Pull-down 40 (1) BV0T 3mA 40 (1) BVDT 3mA 50k Pull-down 40 (1) BV0E 6mA
NEC
Original
se617 SE641 transistor f423 sd667 transistor hh 004 transistor f422 A13052EJ6V0BL00 A13052EJ6V0BL

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Abstract: uPD65837 ) Duration limited by max junction temperature. Target Data C-1001 IRGNIN150K06 P aram eter BV0ES
NEC
Original
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR uPD65837 upd65839 uPD65869 X17512 upD65875 A12158EJ5V0DM00

C1002

Abstract: qe 200 Parameter BV0eo ( s u s ) *CEO lc 2NC5195 Min 80 - - - 20 Max - 1.0 0.1 1.0 80 Unit Vdc mAdc mAdc
-
OCR Scan
C1002 qe 200 C-1002

MJE2370

Abstract: 2N5190 MOTOROLA Cells int. Cells Page BV0T BVDT BV0E BVDE BV08 BVD8 BV07 BVD7 BV0HD BVDHD OUTPUT BUFFER
-
OCR Scan
MJE31 MJE2482 MJE2520 MJE4921 MJE4922 MJE30 MJE2370 2N5190 MOTOROLA transistor mje29 mje29 PL500 2C5192 2C5195 2N5190 2N5191 2N5192

MG150Q2YK1

Abstract: 50k Pull-down 40 (1) BV0T 3mA 40 (1) BVDT 3mA 50k Pull-down 40 (1) BV0E 6mA
-
OCR Scan
MG150Q2YK1