500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
ISL29013IROZ-T7 Intersil Corporation SPECIALTY ANALOG CIRCUIT, PDSO6, 2 X 2.10 MM, ROHS COMPLIANT, PLASTIC, ODFN-6 visit Intersil
78029013A Intersil Corporation DATACOM, MANCHESTER ENCODER/DECODER, CQCC28, CERAMIC, LCC-28 visit Intersil
TLV990-13PFBG4 Texas Instruments 10-bit, 13 MSPS 1-Channel AFE for CCD Sensors 48-TQFP -20 to 75 visit Texas Instruments
TLV990-13PFB Texas Instruments 10-bit, 13 MSPS 1-Channel AFE for CCD Sensors 48-TQFP -20 to 75 visit Texas Instruments
901307-000 TE Connectivity Ltd STD POLY MOLDED PARTS visit Digikey Buy
C8D10PF29013 TE Connectivity Ltd 20 CONTACT(S), FEMALE, STRAIGHT SINGLE PART CARD EDGE CONN, PRESS FIT visit Digikey

br 9013

Catalog Datasheet MFG & Type PDF Document Tags

transistor BR 9013

Abstract: NPN 9013 HN 9013 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications , LTD. ) HN 9013 Characteristics at Tamb = 25 °C Symbol Min. Typ. Max. Unit DC Current Gain at VCE , = 1 mA V(BR)CEO 30 - - V Emitter Base Cutoff Current at Veb = 5.1 V Iebo - - 100 nA Collector , AVAILABLE ® SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of HQNEV TECHNOLOGY LTD. ) HN 9013 w , temperature at a distance of 2 mm from case HN 9013 P 08 tot 0.6 0.4 0.2
-
OCR Scan

transistor BR 9013

Abstract: transistor c 9013 ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into , : 17/06/2005 ST 9013 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit , - 380 - hFE 40 - - - ICBO - - 100 nA V(BR)CEO 30 - - , , Stock Code: 724) R Dated : 17/06/2005 ST 9013 SEMTECH ELECTRONICS LTD. (Subsidiary of
Semtech Electronics
Original

transistor c 9013

Abstract: NPN 9013 ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into , Code: 724) Dated : 17/06/2005 ST 9013 Characteristics at Tamb=25 OC Symbol Min. Typ , V(BR)CEO 30 - - V IEBO - - 100 nA VCE(sat) - - 0.5 V , ST 9013 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Semtech International Holdings Limited
Semtech Electronics
Original

transistor BR 9013

Abstract: BR 9013 ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into , 110 177 250 40 183 250 380 - - ICBO - 100 nA IEBO - 100 nA V(BR)CBO 40 - V V(BR)CEO 30 - V V(BR)EBO 5 - V VCE(sat) - 0.6 , Stock Exchange, Stock Code: 724) ® Dated : 19/03/2009 ST 9013 SEMTECH ELECTRONICS LTD
Semtech Electronics
Original

transistor BR 9013

Abstract: transistor c 9013 ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into , , Stock Code: 724) R Dated : 17/06/2005 ST 9013 Characteristics at Tamb=25 OC Symbol Min , nA V(BR)CEO 30 - - V IEBO - - 100 nA VCE(sat) - - 0.5 V , ST 9013 SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company
Semtech Electronics
Original

NPN 9013

Abstract: transistor BR 9013 ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into , : 17/06/2005 ST 9013 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit , - 380 - hFE 40 - - - ICBO - - 100 nA V(BR)CEO 30 - - , , Stock Code: 724) ® Dated : 17/06/2005 ST 9013 SEMTECH ELECTRONICS LTD. (Subsidiary of
Semtech Electronics
Original

Transistor 9013

Abstract: Transistor-9013 h NPN SILICON TRANSISTOR 9013 TO 92 FEATURES 1.EMITTER Power , 1 2 3 - V(BR)CBO : 45 V Tamb=25 ELECTRICAL CHARACTERISTICS A , - - V(BR)CBO Ic= 100 A IE=0 45 V Collector-emitter breakdown voltage - - V(BR)CEO Ic= 0. 1 mA IB=0 25 V Emitter-base breakdown voltage - - V(BR)EBO IE= 100 A IC=0 5 V Collector cut-off current - ICBO VCB= 40 V
Wing Shing Computer Components
Original

Transistor-9013 h

Abstract: Transistor 9013 ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor 9013 is recommended. Absolute Maximum Ratings (Ta = 25 OC) Parameter 1. Emitter 2. Base 3 , nA -IEBO - 100 nA -V(BR)CBO 40 - V -V(BR)CEO 30 - V -V(BR)EBO
Semtech Electronics
Original

transistor BR 9013

Abstract: 9013 NPN M C C S O T -2 3 P la s tic -E n c a p s u la te T r a n s is to r s ^ 1.BASE 2.EMITTER 3.COLLECTOR ." V S9013LT1 TRANSISTOR (NPN) FEATURES Power dissipation PcM: 0.3 W (Tamb=25'C) C ollector current ICM: 0 .5 4 '" Oi A C ollector-base voltage V(BR)CBO:40V Operating and storage , Transition frequency Symbol V(8R)CBO V (BR)CEO V(BR)EBO ICBO ICEO Iebo hFE(1) hFE(2> * ' TAftt , MARKING : S 9013 LT 1=J 3 160 M C C Typical Characteristics S9013LT1 : : : : : : .y.'.
-
OCR Scan
transistor BR 9013 9013 NPN transistor 9013 H NPN

PNP 9012

Abstract: transistor BR 9013 HN 9012 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, G and H, according to its DC current gain. As complementary type the NPN transistor HN 9013 is recommended. On special request, these transistors can be manufactured in different pin configurations , -V(br)ceo 30 - - V Emitter Base Cutoff Current at -Veb = 5.1 V -Iebo - - 100 nA Collector
-
OCR Scan
PNP 9012 9012 pnp 9012 pnp transistor 9012 transistor NPN 9012 transistor BR 9012

transistor c 9012

Abstract: PNP 9012 ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor ST 9013 is recommended. On special request, these transistors can be manufactured in different pin , - -ICBO - - 100 nA -V(BR)CEO 30 - - V -IEBO - - 100 nA
Semtech Electronics
Original
transistor c 9012 BR 9012 transistor 9012 9013 9012 Transistor 9012 G transistor s 9012

transistor c 9012

Abstract: PNP 9012 ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor ST 9013 is recommended. On special request, these transistors can be manufactured in different pin , nA -V(BR)CEO 30 - - V -IEBO - - 100 nA -VCE(sat) - - 0.7
Semtech Electronics
Original
pin configuration NPN transistor 9012 PNP 9012 NPN Output Transistor 9012 npn NPN C 9013 IC 9012 9012 transistor datasheet

transistor c 9012

Abstract: PNP 9012 ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor ST 9013 is recommended. On special request, these transistors can be manufactured in different pin , - -ICBO - - 100 nA -V(BR)CEO 30 - - V -IEBO - - 100 nA
Semtech Electronics
Original
transistor npn c 9013 ST9012 transistor 9012 c br 9013

transistor c 9012

Abstract: PNP 9012 ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor ST 9013 is recommended. On special request, these transistors can be manufactured in different pin , nA -V(BR)CEO 30 - - V -IEBO - - 100 nA -VCE(sat) - - 0.7
Semtech Electronics
Original
9013 transistor pnp 9013 NPN Output Transistor 9013 transistor c 9012 data sheet transistor 9012 datasheet transistor 9013

pc40 core

Abstract: PC40 ferrite H=1194A/m Remanent flux density Br Coercive force Hc 25kHz, 200mT Core loss Pcv 100kHz , 70±1.7 69±1 16.4±0.5 16.4±0.5 PC40 EC70-Z 4890 PE22 EC90-Z 6340 90±1.8 90±1.3 30±1 30±1 PC40
-
Original
pc40 core PC40 ferrite Ferrite Core PC40 ferrite pc40 Ee70 PC40 EI70-Z DT138X20X58 DT200X20X100 SP135X65X20 SP185X110X20 SP250X155X20

ABB breaker S5

Abstract: Capacitive voltage transformer < T- 2 r L c+v o- (+Ì 4 Prepare 30 trip Carrier receiving Reset ir -mw 901=1 O 90113 O 901!3 o 901
-
OCR Scan
ABB breaker S5 Capacitive voltage transformer siI163 rtqa 180 RAZFE asea transformer 9S263 0040-C B43S-1

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc Angle (BR), Sizes 9 â'" 37 17 â'" Connector, Plug, BR, Size 51 18 â'" Connector, Plug, BR, Size 100 19 â'" Connector, Receptacle, BR, Sizes 9 â'" 37 20 â'" Connector, Receptacle, BR Size 51 21 â'" Connector, Receptacle, BR Size 100 22 â'" Connector, Plug, Board Straight (BS), Sizes 9 â'" 37 23 â , 90˚ right angle (BR, CBR) board thickness. Jackpost mounting for use with locking hardware is also
-
OCR Scan
LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 3186J CA90245
Showing first 20 results.