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78029013A Intersil Corporation DATACOM, MANCHESTER ENCODER/DECODER, CQCC28, CERAMIC, LCC-28 visit Intersil
ISL29013IROZ-T7 Intersil Corporation SPECIALTY ANALOG CIRCUIT, PDSO6, 2 X 2.10 MM, ROHS COMPLIANT, PLASTIC, ODFN-6 visit Intersil
TLV990-13PFB Texas Instruments 10-bit, 13 MSPS 1-Channel AFE for CCD Sensors 48-TQFP -20 to 75 visit Texas Instruments
TLV990-13PFBG4 Texas Instruments 10-bit, 13 MSPS 1-Channel AFE for CCD Sensors 48-TQFP -20 to 75 visit Texas Instruments

br 9013

Catalog Datasheet MFG & Type PDF Document Tags

transistor BR 9013

Abstract: NPN 9013 HN 9013 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications , LTD. ) HN 9013 Characteristics at Tamb = 25 °C Symbol Min. Typ. Max. Unit DC Current Gain at VCE , = 1 mA V(BR)CEO 30 - - V Emitter Base Cutoff Current at Veb = 5.1 V Iebo - - 100 nA Collector , AVAILABLE ® SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of HQNEV TECHNOLOGY LTD. ) HN 9013 w , temperature at a distance of 2 mm from case HN 9013 P 08 tot 0.6 0.4 0.2
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transistor BR 9013

Abstract: transistor c 9013 ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into , : 17/06/2005 ST 9013 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit , - 380 - hFE 40 - - - ICBO - - 100 nA V(BR)CEO 30 - - , , Stock Code: 724) R Dated : 17/06/2005 ST 9013 SEMTECH ELECTRONICS LTD. (Subsidiary of
Semtech Electronics
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transistor c 9013

Abstract: NPN 9013 ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into , Code: 724) Dated : 17/06/2005 ST 9013 Characteristics at Tamb=25 OC Symbol Min. Typ , V(BR)CEO 30 - - V IEBO - - 100 nA VCE(sat) - - 0.5 V , ST 9013 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Semtech International Holdings Limited
Semtech Electronics
Original

transistor BR 9013

Abstract: BR 9013 ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into , 110 177 250 40 183 250 380 - - ICBO - 100 nA IEBO - 100 nA V(BR)CBO 40 - V V(BR)CEO 30 - V V(BR)EBO 5 - V VCE(sat) - 0.6 , Stock Exchange, Stock Code: 724) ® Dated : 19/03/2009 ST 9013 SEMTECH ELECTRONICS LTD
Semtech Electronics
Original

transistor BR 9013

Abstract: transistor c 9013 ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into , , Stock Code: 724) R Dated : 17/06/2005 ST 9013 Characteristics at Tamb=25 OC Symbol Min , nA V(BR)CEO 30 - - V IEBO - - 100 nA VCE(sat) - - 0.5 V , ST 9013 SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company
Semtech Electronics
Original

NPN 9013

Abstract: transistor BR 9013 ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into , : 17/06/2005 ST 9013 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit , - 380 - hFE 40 - - - ICBO - - 100 nA V(BR)CEO 30 - - , , Stock Code: 724) ® Dated : 17/06/2005 ST 9013 SEMTECH ELECTRONICS LTD. (Subsidiary of
Semtech Electronics
Original

Transistor 9013

Abstract: Transistor-9013 h NPN SILICON TRANSISTOR 9013 TO 92 FEATURES 1.EMITTER Power , 1 2 3 - V(BR)CBO : 45 V Tamb=25 ELECTRICAL CHARACTERISTICS A , - - V(BR)CBO Ic= 100 A IE=0 45 V Collector-emitter breakdown voltage - - V(BR)CEO Ic= 0. 1 mA IB=0 25 V Emitter-base breakdown voltage - - V(BR)EBO IE= 100 A IC=0 5 V Collector cut-off current - ICBO VCB= 40 V
Wing Shing Computer Components
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Transistor-9013 h

Abstract: Transistor 9013 ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor 9013 is recommended. Absolute Maximum Ratings (Ta = 25 OC) Parameter 1. Emitter 2. Base 3 , nA -IEBO - 100 nA -V(BR)CBO 40 - V -V(BR)CEO 30 - V -V(BR)EBO
Semtech Electronics
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transistor BR 9013

Abstract: 9013 NPN M C C S O T -2 3 P la s tic -E n c a p s u la te T r a n s is to r s ^ 1.BASE 2.EMITTER 3.COLLECTOR ." V S9013LT1 TRANSISTOR (NPN) FEATURES Power dissipation PcM: 0.3 W (Tamb=25'C) C ollector current ICM: 0 .5 4 '" Oi A C ollector-base voltage V(BR)CBO:40V Operating and storage , Transition frequency Symbol V(8R)CBO V (BR)CEO V(BR)EBO ICBO ICEO Iebo hFE(1) hFE(2> * ' TAftt , MARKING : S 9013 LT 1=J 3 160 M C C Typical Characteristics S9013LT1 : : : : : : .y.'.
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transistor BR 9013 9013 NPN transistor 9013 H NPN

PNP 9012

Abstract: transistor BR 9013 HN 9012 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, G and H, according to its DC current gain. As complementary type the NPN transistor HN 9013 is recommended. On special request, these transistors can be manufactured in different pin configurations , -V(br)ceo 30 - - V Emitter Base Cutoff Current at -Veb = 5.1 V -Iebo - - 100 nA Collector
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PNP 9012 9012 pnp 9012 pnp transistor 9012 transistor NPN 9012 9012

transistor c 9012

Abstract: PNP 9012 ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor ST 9013 is recommended. On special request, these transistors can be manufactured in different pin , - -ICBO - - 100 nA -V(BR)CEO 30 - - V -IEBO - - 100 nA
Semtech Electronics
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transistor c 9012 BR 9012 transistor 9012 9013 Transistor 9012 G transistor s 9012 Transistor 9012

transistor c 9012

Abstract: PNP 9012 ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor ST 9013 is recommended. On special request, these transistors can be manufactured in different pin , nA -V(BR)CEO 30 - - V -IEBO - - 100 nA -VCE(sat) - - 0.7
Semtech Electronics
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pin configuration NPN transistor 9012 PNP 9012 NPN Output Transistor 9012 npn NPN C 9013 IC 9012 9012 transistor datasheet

transistor c 9012

Abstract: PNP 9012 ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor ST 9013 is recommended. On special request, these transistors can be manufactured in different pin , - -ICBO - - 100 nA -V(BR)CEO 30 - - V -IEBO - - 100 nA
Semtech Electronics
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transistor npn c 9013 ST9012 transistor 9012 c transistor br 9012 br 9013

transistor c 9012

Abstract: PNP 9012 ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor ST 9013 is recommended. On special request, these transistors can be manufactured in different pin , nA -V(BR)CEO 30 - - V -IEBO - - 100 nA -VCE(sat) - - 0.7
Semtech Electronics
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9013 transistor pnp 9013 NPN Output Transistor 9013 transistor c 9012 data sheet transistor 9012 datasheet transistor 9013

pc40 core

Abstract: PC40 ferrite H=1194A/m Remanent flux density Br Coercive force Hc 25kHz, 200mT Core loss Pcv 100kHz , 70±1.7 69±1 16.4±0.5 16.4±0.5 PC40 EC70-Z 4890 PE22 EC90-Z 6340 90±1.8 90±1.3 30±1 30±1 PC40
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pc40 core PC40 ferrite Ferrite Core PC40 ferrite pc40 Ee70 PC40 EI70-Z DT138X20X58 DT200X20X100 SP135X65X20 SP185X110X20 SP250X155X20

ABB breaker S5

Abstract: Capacitive voltage transformer < T- 2 r L c+v o- (+Ì 4 Prepare 30 trip Carrier receiving Reset ir -mw 901=1 O 90113 O 901!3 o 901
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ABB breaker S5 Capacitive voltage transformer siI163 rtqa 180 RAZFE asea transformer 9S263 0040-C B43S-1

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc Angle (BR), Sizes 9 â'" 37 17 â'" Connector, Plug, BR, Size 51 18 â'" Connector, Plug, BR, Size 100 19 â'" Connector, Receptacle, BR, Sizes 9 â'" 37 20 â'" Connector, Receptacle, BR Size 51 21 â'" Connector, Receptacle, BR Size 100 22 â'" Connector, Plug, Board Straight (BS), Sizes 9 â'" 37 23 â , 90˚ right angle (BR, CBR) board thickness. Jackpost mounting for use with locking hardware is also
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LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 3186J CA90245
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