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bcy 79 Datasheet

Part Manufacturer Description PDF Type
BCY79 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=PNP / Pkg=TO18 / Vceo=45 / Ic=0.2 / Hfe=80-360 / fT(Hz)=180M / Pwr(W)=0.39 Original
BCY79 Philips Semiconductors PNP switching transistors - Pol=PNP / Pkg=TO18 / Vceo=45 / Ic=0.2 / Hfe=80-360 / fT(Hz)=180M / Pwr(W)=0.39 Original
BCY79 Philips Semiconductors Small-signal Transistors Original
BCY79 STMicroelectronics Low Noise Audio Amplifier Original
BCY79 STMicroelectronics LOW NOISE AUDIO AMPLIFIERS - Pol=PNP / Pkg=TO18 / Vceo=45 / Ic=0.2 / Hfe=80-360 / fT(Hz)=180M / Pwr(W)=0.39 Original
BCY79 Continental Device India Semiconductor Device Data Book 1996 Scan
BCY79 Crimson Semiconductor Transistor Selection Guide Scan
BCY79 Ferranti Semiconductors Quick Reference Guide 1985 Scan
BCY79 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan
BCY79 Micro Electronics Semiconductor Device Data Book Scan
BCY79 Motorola Motorola Transistor Datasheets Scan
BCY79 Motorola The European Selection Data Book 1976 Scan
BCY79 Motorola European Master Selection Guide 1986 Scan
BCY79 N/A Semiconductor Master Cross Reference Guide Scan
BCY79 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BCY79 N/A Shortform Transistor Datasheet Guide Scan
BCY79 N/A Shortform Data and Cross References (Misc Datasheets) Scan
BCY79 N/A Basic Transistor and Cross Reference Specification Scan
BCY79 N/A Basic Transistor and Cross Reference Specification Scan
BCY79 N/A Transistor Replacements Scan
Showing first 20 results.

bcy 79

Catalog Datasheet MFG & Type PDF Document Tags

BCY792

Abstract: bcy 79 AKTIENÛESELLSCHAF BCY 77, BCY 78, and BCY 79 are epitaxial PNP silicon planar transistors in TO 18 cases (18 A 3 DIN , , and BCY 65 E. BCY 77 BCY 78 -BCY 79 Type Ordering code BCY 77 Q62702-C327 BCY 77 VII Q62702-C327-V1 , VIII Q60203-Y78-H BCY 78 IX Q60203-Y78-J BCY 78 X Q60203-Y78-K BCY 79 Q60203-Y79 BCY 79 VII Q60203-Y79-G BCY 79 VIII Q60203-Y79-H BCY 79 IX Q60203-Y79-J E B 0 2.5W Approx. weight 0.3 g Dimensions In mm Maxirpum ratings BCY 77 BCY 78 BCY 79 Collector-emitter voltage -Vera 60 32 45 V Collector-emitter
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Q62702-C327-V2 Q62702-C327-V3 BCY792 bcy 79 BCY78 BCY 78 BCY77 bcy77ix QQ0432S Q60203-Y78 Q60203-Y78-G Q0Q432

Q62702-C327

Abstract: bcy77 04325 D ;_B£XZ5 -BCY 79 SIENENS AKTIEN6ESELLSCHAF BCY 77, BCY 78, and BCY 79 are epitaxial PNP , BCY 79 Q60203-Y79 BCY 79 VII Q60203-Y79-G BCY 79 VIII Q60203-Y79-H BCY 79 IX Q60203-Y79-J 2.5W Approx. weight 0.3 g Dimensions In mm Maxirpum ratings BCY 77 BCY 78 BCY 79 Collector-emitter voltage , AKTIENGESELLSCHAF Static characteristics (T"amb = 25 °C) The transistors BCY 77, BCY 78, and BCY 79 are classified in groups of DC current gain hfE and marked by Roman numerals. BCY 77 BCY 78 â'" BCY 79 Type
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K1754 C327 bcy77 siemens 78-IX G00432S 0Q0M331

BCY77

Abstract: BCY79 BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 (TO-18). The collector , Q60203-Y78-G BCY 78 VIII Q60203-Y78-H BCY 78 IX Q60203-Y78-J BCY78X Q60203-Y78-K BCY 79 VII Q60203-Y79-G BCY 79 VIII Q60203-Y79-H BCY 79 IX Q60203-Y79-J Weight approx. 0.3 g Dimensions in mm Maximum ratings BCY 77 BCY 78 BCY 79 Collector-emitter voltage - VCES 60 32 45 V Collector-emitter voltage â , 78 and BCY 79 are classified in groups of static forward current transfer ratio /?FE and identified
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BCY 791x zr 4.7v 1Zv transistor Transistor 78 L 05 Q62702-C 327-V2 327-V3

Q62702-C327

Abstract: 79IX PIMP-Transistoren für rauscharme NF-Vor- und BCY 77 Treiberstufen BCY 78 -BCY 79 BCY 77; BCY 78; BCY 79 sind epitaktische PNP-Silizium-Plariar-Transistoren im Gehäuse 18 A3 DIN 41 876 (TO-18). , 79 VII Q60203- -Y79-G BCY 79 VIII Q60203- -Y79-H BCY 79 IX Q60203- -Y79-J Gewicht etwa 0,3 g MaÃe in mm Grenzdaten BCY 77 BCY 78 BCY 79 Kollektor-Emitter-Spannung 60 32 45 V , 79 Statische Kenndaten (Tu = 25 °C) BCY 77; BCY 78 und BCY 79 werden nach der statischen
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79IX BCY 12 34RR 78-VIII Q62702-

BCY78X

Abstract: BCY79 BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 (TO-18). The collector , Q60203-Y78-G BCY 78 VIII Q60203-Y78-H BCY 78 IX Q60203-Y78-J BCY78X Q60203-Y78-K BCY 79 VII Q60203-Y79-G BCY 79 VIII Q60203-Y79-H BCY 79 IX Q60203-Y79-J Weight approx. 0.3 g Dimensions in mm Maximum ratings BCY 77 BCY 78 BCY 79 Collector-emitter voltage - VCES 60 32 45 V Collector-emitter voltage â , 78 and BCY 79 are classified in groups of static forward current transfer ratio /?FE and identified
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BCY77VII BCY77VIII

BCY79

Abstract: bcy 79 PNP SILICON TRANSISTOR TRANSISTOR PNP SILICIUM BCY 78 BCY 79 Compi, of BCY 58 and BCY 59 - Switching and amplifier Commutation et amplification -32 V BCY 78 VCEO -45 V BCY 79 »C -200 mA , +25 °C (Unless otherwise stated) (Sauf indicetions con trairesl bcy 78 bcy 79 Collector-emitter , ©rature de stockage max. Tstg - 65 +200 °C °C 76-15 1/7 465 BCY 78, BCY 79 STATIC CHARACTERISTICS , -35V VBE = ° BCY 79 -20 VCE = -45 V vBE = o -100 Vce=-25V vBE=o Tamb= 150°C BCY 78 -10 U A
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TFK 450 B2

Abstract: tfk bcy 59 BCY 78 â'¢ BCY 79 Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar , BCY 78 BCY 79 /ces 7ceo EBO 32 32 5 200 20 45 45 V V V mA mA tot stg 1 200 -65 . +200 W °C °C 173 BCY 78 â'¢ BCY 79 0 50 1(X Wärmewiderstände Thermal resistances , UCE = 32 V, /amb = 150 °C BCY 78 - t/CE = 45 V BCY 79 - i/CE = 45 V, tamb= 150 °C BCY 79 - UCE = 32 V, -t/BE = 0,2 V, tamb =100°C BCY 78 - UCE = 45 V, -UBE = 0,2 V, tamb = 100°C BCY 79 *) AQL
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TFK 450 B2 tfk bcy 59 tfk bcy 58 TFK 79 BCY790 75558

1B57

Abstract: BCY78 BCY78 SILICON PLANAR PNP BCY 79 LOW-NOISE AUDIO AMPLIFIERS The BCY 78 and BCY 79 are silicon , MAXIMUM RATINGS BCY 78 BCY 79 VCES Collector-emitter voltage (VBE = 0) -32 V -45 V VCEO , =-32V VCE=-25V Tamb = 150°C for BCY 79 VCE = -35V VCE =-45V Vqe = -35V Tamb = 150°C -2 -20 -100 -10 -2 , Tamb = 100°C for BCY 79 VCE =-45 V Tamb = 100°C -20 -20 /JA MA Iebo Emitter cutoff current (lc =0 , BCY 79 -32 -45 V V V(br)ceo Collector-emitter breakdown voltage (lB=0) lc = -2 mA for BCY 78 for BCY
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1B57 G-1B57 G-1860

bcy 79

Abstract: bcy 78 BCY78 BCY79 SILICON PLANAR PNP LOW-NOISE AUDIO AMPLIFIERS The BCY 78 and BCY 79 are silicon , MAXIMUM RATINGS BCY 78 BCY 79 VcES Collector-emitter voltage (VBE = 0) -32 V -45 V VcEO , BCY 79 VCE =-35V VCE = -45V Vce = -35V Tamb = 15CI°C -2 -20 -100 -10 -2 -20 -100 -10 nA nA pA nA nA M 'cex Collector cutoff current (VBE = 0.2V) for BCY 78 Vce=-32V Tal1b = 100°C for BCY 79 Vce=-45V Tamb , Collector-emitter breakdown voltage (VBE = 0) lc = -10 ÃA for BCY 78 for BCY 79 -32 -45 V V V(br)ceo
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BCY791x

Abstract: BSW 32 445 BCY 78 VII TO 18 390 - 32 120 220 - 2 -0,25 10/0,25 465 BCY 78 VIII TO 18 390 - 32 180 310 -2 -0,25 10/0,25 465 BCY 78 IX TO 18 390 - 32 250 460 - 2 -0,25 10/0,25 465 465 BCY 78 X TO 18 390 - 32 380 630 - 2 -0,25 10/0,25 465 BCY 79 VII TO 18 390 -45 120 220 - 2 -0,8 100/2,5 465 BCY 79 VIII TO 18 390 -45 180 310 - 2 -0,8 100/2,5 465 BCY 79 IX TO 18 390 -45 250 460 - 2 - 0,8 100/2,5 465 BCY 79 X TO 18 390 -45 380 630 - 2 -0,8 100/2,5 465 BSV 15 TO 39 32001 -40 40
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BCY791x BSW 32 BF139 bsw21 I121E

tfk 731

Abstract: N100700 Besondere Merkmale: â'¢ Verlustleistung 1 W â'¢ In Gruppen sortiert â'¢ Komplementär zu BCY 78, BCY 79 Features: 0 Power dissipation 1 W â'¢ In groups selected â'¢ Complementary to BCY 78, BCY 79 , Éì W BCY 58 â'¢ BCY 59 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial , Mot 'j 'stg BCY 58 32 32 7 200 50 1 200 BCY 59 45 45 -65. +200 V V V mA mA W °C °C B 2/V.2. 496/0875 A 1 161 W BCY 58 â'¢ BCY 59 50 100 150 °C 'amb''case- Wärmewiderstände
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tfk 731 N100700 BCY 65 BCY58

BFX90

Abstract: BFR18 480 T0-18 BCY 79 PNP 45 0.01-200 80/360 0.12 10 2 180 4.5 85 480 T0-18 BFR16 NPN 60 0.01-10 150/350 , /520 0.12 10 0.01-200 180 4.5 TO 18 BCY 79 PNP 45 2 80/360 0.12 10 0.01-200 180 4.5 TO 18 BFR16 NPN , o. >- £ ÃJ IL JC > (0 LÃJ U > i) < a NF (dB) M zn S I- LI. a. n o o (SU) uoJ (su) PACKAGE BCY 58 NPN 32 0.1-200 80/520 0.12 10 2 200 3.5 85 480 T0-18 BCY 59 NPN 45 0.1-200 80/360 0.12 10 2 200 3.5 85 480 T0-18 BCY 70 PNP 40 0.01-100 50/150 0.14 10 6 400 2 48 320 T0-18 BCY 71 PNP 45 0.01-100 100
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BFR18 BFW43 BFW44 BFX38 BFX39 BFX40 BFX90 T0-39

bc 107 transistor

Abstract: transistor Bc 540 178 BSW21 BSW22 30/32 V BCY 58 BCY 78 2N 2221 :2N 2222 2N 2218 2N 2219 40 V 2N 2221 A 2N 2222 A 2N 2906 2N 2907 2N 2218 A 2N 2219 A 2N 2904 2N 2905 BC 211 BSX 45 BC 313 BSV 15 45 V BC 107 BCY 59 BC 177 BCY 79 50 V BSX51 A BSX52 A BSW21 A BSW22 A 2N 16113(1) 2N 17111(1) 60 V BSX52 , / 2,5 125 6 6 800 BCY 78 390 32 80 1000 (1) 10 0,25 10/ 0,25 1805 7 6 800 BCY 79 390 45 80 1000 (1) 10 0,8 100/ 2,5 1801 7 6 800 BCY 69 300 20 600* 900* 2 0,25 10/ 0,5 150 8 5 BSX24 300 32
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bc 107 transistor transistor Bc 540 BC 540 TRANSISTOR 2N 2222 2221-2N BC 390 Transistor 2N735 2N736 BCY59

TRANSISTOR BC 313

Abstract: npn 2222 transistor 178 BSW21 BSW22 30/32 V BCY 58 BCY 78 2N 2221 :2N 2222 2N 2218 2N 2219 40 V 2N 2221 A 2N 2222 A 2N 2906 2N 2907 2N 2218 A 2N 2219 A 2N 2904 2N 2905 BC 211 BSX 45 BC 313 BSV 15 45 V BC 107 BCY 59 BC 177 BCY 79 50 V BSX51 A BSX52 A BSW21 A BSW22 A 2N 16113(1) 2N 17111(1) 60 V BSX52
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TRANSISTOR BC 313 npn 2222 transistor transistor 2n 2222 2907 TRANSISTOR PNP NPN 2904 2n 2222 transistor

BFX31

Abstract: BFX37 PROFESSIONAL TR ANSISTORS Low-level low-noise amplifies TYPE POLARITY (A)033A1 NF (dB) ar CL > E ÃJ u. JZL id à > ro i/> l±J U > » < _o lc RANGE (mA) N X s H U- Q. £1 O O PACKAGE BCY 58 NPN 32 2 80/520 0.12 10 0.1-200 200 3.5 TO 18 BCY59 NPN 45 2 80/360 0.12 10 0.1-200 200 3.5 TO 18 BCY 77 PNP 60 2 80/260 0.12 10 0.01-200 180 4.5 TO 18 BCY 78 PNP 32 2 80/520 0.12 10 0.01-200 180 4.5 TO 18 BCY 79 PNP 45 2 80/360 0.12 10 0.01-200 180 4.5 TO 18 BFR16 NPN 60 1 150/350 0.15 1 0.01-10
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BFX31 BFX37 BFX91

bfx74a

Abstract: BFX90 480 T0-18 BCY 79 PNP 45 0.01-200 80/360 0.12 10 2 180 4.5 85 480 T0-18 BFR16 NPN 60 0.01-10 150/350 , o. >- £ ÃJ IL JC > (0 LÃJ U > i) < a NF (dB) M zn S I- LI. a. n o o (SU) uoJ (su) PACKAGE BCY 58 NPN 32 0.1-200 80/520 0.12 10 2 200 3.5 85 480 T0-18 BCY 59 NPN 45 0.1-200 80/360 0.12 10 2 200 3.5 85 480 T0-18 BCY 70 PNP 40 0.01-100 50/150 0.14 10 6 400 2 48 320 T0-18 BCY 71 PNP 45 0.01-100 100/200 0.14 10 2 350 2 â'" T0-18 BCY 72 PNP 25 0.01-100 50/150 0.14 10 6 350 2 48 320 T0-18 BCY 77 PNP
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BFX41 bfx74a BCY 68 BFR 450 BFX74A

bc 540

Abstract: TRANSISTOR BC 137 BCY 78 BD 235 and BD 236') BC 237 with BC 307 BCY59 with BCY 79 BD 237 and BD 238') BC 238 with BC
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bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 TRANSISTOR BC 136 BC 677 bc 207 npn BSV57 BC108 BD188 BD1901 BC1611

bcy580

Abstract: BCY590 NPN SILICON TRANSISTOR TRANSÌSTOR NPN SILICIUM *BCY 58 BCY59 Compi, of BCY 78 and BCY 79 à , amplification 32 V BCY 58 VCEO 45 V BCY 59 'c 200 mA Maximum power dissipation Dissipation de puissance , (Unlessotherwisestated) VALEURS LIMITES ABSOLUES D'UTILISATION amt) ¡Sauf Indications contraires) BCY 58 BCY 58 , SEMCOWUCTEIJRS 45 J BCY 58, BCY 59 STATIC CHARACTERISTICS t , = 25°C (Unless otherwise stated , . Collector-emitter cut-off current Courant résidu«! collecteur-émetteur vce=32v vBE=o 'ces bcy 58 0,2 10 nA vce
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bcy580 BCY590 transistor h21e SCHEMA BCY 59

BCY59

Abstract: BCY58 stages, driver stages and low-noise input stages. The complementary PNP types are respectively the BCY 78 and !BCY 79. ABSOLUTE MAXIMUM RATINGS BCY 58 BCY 59 VCES Collector-emitter voltage (VBE = 0) 32 V 45 , BCY58 SILICON PLANAR NPN BCY 59 LOW-NOISE AUDIO AMPLIFIERS The BCY58 and BCY59 are silicon , Dimensions in mm Collector connected to case (sim. to TO-18) 55 7/76 BCY58 BCY 59 THERMAL DATA 'th , = 10 mA 1B= 0.25 mA lc = 100 mA lB = 2.5 mA 0.6 0.7 0.85 0.75 0.9 1.2 V V 56 BCY 58 BCY 59
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BcY591

BCY59

Abstract: BCY58 BCY58 BCY 59 SILICON PLANAR NPN LOW-NOISE AUDIO AMPLIFIERS The BCY58 and BCY59 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They aire intended for use in audio input stages, driver stages and low-noise input stages. The complementary PNP types are respectively the BCY 78 and BCY 79. ABSOLUTE MAXIMUM RATINGS BCY 58 BCY 59 VCES Collector-emitter voltage (VBE = 0) 32 V 45 , 2.5 mA 0.6 0.7 0.85 0.75 0.9 1.2 V V 11 BCY 58 BCY59 ELECTRICAL CHARACTERISTICS (continued
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Showing first 20 results.