| BAV21 |
|
Changzhou Galaxy Electrical
|
Rectifier Diode, Ultra Fast Recovery Rectifier, Single, 250V, SOD-27, 2-Pin |
|
Original |
PDF
|
| BAV21 |
|
Diodes Incorporated
|
Short Form Selection Guide |
|
Original |
PDF
|
| BAV21 |
|
Diodes Incorporated
|
Fast Switching Diode |
|
Original |
PDF
|
| BAV21 |
|
Diodes Incorporated
|
FAST SWITCHING DIODE |
|
Original |
PDF
|
| BAV21 |
|
Diotec
|
Silicon-Planar-Diodes |
|
Original |
PDF
|
| BAV21 |
|
EIC Semiconductor
|
High Speed Switching Diodes |
|
Original |
PDF
|
| BAV21 |
|
Fairchild Semiconductor
|
Small Signal Diode |
|
Original |
PDF
|
| BAV21 |
|
Fairchild Semiconductor
|
High Voltage General Purpose Diode |
|
Original |
PDF
|
| BAV21 |
|
Fairchild Semiconductor
|
High Voltage General Purpose Diode |
|
Original |
PDF
|
| BAV21 |
|
Fairchild Semiconductor
|
High Voltage General Purpose Diode |
|
Original |
PDF
|
| BAV21 |
|
General Semiconductor
|
Small Signal Diodes |
|
Original |
PDF
|
| BAV21 |
|
Good-Ark
|
Small-Signal Diode |
|
Original |
PDF
|
| BAV21 |
|
National Semiconductor
|
Diode, High Voltage General Purpose Diode |
|
Original |
PDF
|
| BAV21 |
|
NXP Semiconductors
|
BAV21 - General purpose diodes - Cd max.: 5 pF; Configuration: single ; IF max: 250 mA; IFSM max: 9 A; IR max: 100@VR=200V nA; IFRM: 625 mA; trr max: 50 ns; VFmax: 1@IF=100mA mV; VR max: 200 V |
|
Original |
PDF
|
|
|
| BAV21 |
|
Philips Semiconductors
|
General purpose diodes |
|
Original |
PDF
|
| BAV21 |
|
Philips Semiconductors
|
General Purpose Diodes |
|
Original |
PDF
|
| BAV21 |
|
Siemens
|
Cross Reference Guide 1998 |
|
Original |
PDF
|
| BAV21 |
|
Taitron Components
|
HIGH VOLTAGE SWITCHING DIODES |
|
Original |
PDF
|
| BAV21 |
|
Vishay Telefunken
|
Silicon Epitaxial Planar Diodes |
|
Original |
PDF
|
| BAV21 |
|
BKC International
|
250 V, 400 mW silicon epitaxial planar diode |
|
Scan |
PDF
|
