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TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
UC1612J/883B Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

b745 diode

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b745 diode

Abstract: B745 MOTOROLA MOTOROLA Order this document by MBRF745/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODETM Schottky Power Rectifier MBRF745 The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal­to­silicon power diode. State­of­the­art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very , Seconds · Shipped 50 units per plastic tube · Marking: B745 1 2 CASE 221E­01 ISOLATED TO
Motorola
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b745 diode B745 MOTOROLA b745 221E AN1040 E69369

b745 diode

Abstract: b745 M OTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODETM Schottky Power Rectifiers The S W IT C H M O D E Pow er Rectifier em ploys the Schottky Barrier principle in a large a rea m etal-to -silico n pow er diode. S ta te -o f-th e -a rt geom etry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use a s rectifiers in very low -voltage, high-frequency , 10 S eco nd s Shipped 50 units per plastic tube Marking: B745 C A S E 221E-01 IS O LA T ED TO -2 2
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B745 MOTOROLA

Abstract: b745 diode MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRF745/D SWITCHMODETM S ch o ttky Pow er R e c tifie r The SW ITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. S tate-of-th e-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very , 50 units per plastic tube Marking: B745 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage
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motorola an1040 RECTIFIER DIODES Motorola

B745 MOTOROLA

Abstract: b745 diode MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRF745/D SW ITCH MODETM S ch o ttky Pow er R ectifier The S W IT C H M O D E P ow er R ectifier em p lo ys the S cho ttky B arrier p rincip le in a large area m e ta l-to -s ilic o n po w e r diode. S ta te - o f- th e - a r t ge o m e try fea tu res epitaxial co n stru ctio n w ith oxide pa ssiva tion and m etal o ve rla y contact , olde ring Purposes: 260°C M ax. fo r 10 S econds S hipped 50 units per plastic tube M arking: B745 CASE
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U840 diode motorola

Abstract: motorola u860 diode SWITCHMODE Power Rectifier OR'ing Function Diode . . . . . . . . . . 125 25 Amp, 35 Volt SWITCHMODE Power
ON Semiconductor
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U840 diode motorola motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode DL151/D

A5 GNE mosfet

Abstract: EATON CM20A . 142, 143 INTERNATIONAL RECTIFIER Diode Bridges , . 123 SPC TECHNOLOGY Kits: Diode, LED, and R e ctifier , DEVICES INTEGRATED CIRCUITS Diode. Improved format. Over 50,700 diodes from 153 manufacturers
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A5 GNE mosfet EATON CM20A smd transistor marking 352a FTG 1087 S 2N8491 FEB3T