NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| AP2322GN | Advanced Power Electronics Corp. | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
5 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: AP2322GN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Capable of 1.8V gate drive BVDSS Simple Drive Requirement RDS(ON) D , /W 1 200801112 AP2322GN Electrical Characteristics@Tj=25oC(unless otherwise specified , CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2 AP2322GN 10 10 o , , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2322GN ... | Original |
5 pages, |
N-CHANNEL MOSFET 30V 2A SOT-23 AP2322GN ap232 AP2322GN abstract |
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| Abstract: passive components relative to the AP232. The M5232P M5232P complies with the requirements of the EIA/TIA 232-D 232-D , Description The ALi's M5232P M5232P combines three drivers and five receivers from ASP trade standard AP232 bipolar quadruple drivers and receivers, respectively. The pinout matches the flow through design of the AP232 to ... | Original |
2 pages, |
M5232P M5232 ACER LABORATORIES INC acer M5232P A ASP AP232 chip ap232 ap232 RS-232 M5232P abstract |
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| Abstract: AP2322GN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS Simple Drive Requirement D 20V RDS(ON) Capable of 1.8V gate drive , Unit 150 /W 1 200810013 AP2322GN Electrical Characteristics@Tj=25oC(unless otherwise , AP2322GN 10 10 o 5.0V 4.0V 3.0V 2.5V ID , Drain Current (A) 8 o 5.0V 4. 0 V 3.0 , 3 AP2322GN f=1.0MHz 12 1000 V DS =8V V DS =12V V DS =16V C iss 8 C (pF ... | Original |
5 pages, |
AP2322GN ap232 AP2322GN abstract |
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| Abstract: AP2320GN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS Small Package Outline Surface Mount Device , /W 201018073-1/4 AP2320GN Electrical Characteristics@Tj=25oC(unless otherwise specified , SUPPORT OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED. 2/4 AP2320GN 1 , Temperature 3/4 AP2320GN f=1.0MHz 100 I D = 0.4 A 12 V DS =80V C iss 10 C (pF) VGS ... | Original |
5 pages, |
AP2320GN AP2320GN abstract |
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| Abstract: AP2322GN Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Capable of 1.8V gate drive BVDSS Simple Drive Requirement RDS(ON) D , 3 Max. Unit 150 /W 201114061-1/4 AP2322GN Electrical Characteristics@Tj=25oC , /4 AP2322GN 10 10 o 5.0V 4.0V 3.0V 2.5V ID , Drain Current (A) 8 o 5.0V , v.s. Junction Temperature 3/4 AP2322GN f=1.0MHz 12 1000 V DS =8V V DS =12V V DS =16V ... | Original |
4 pages, |
N-CHANNEL MOSFET 30V 2A SOT-23 AP2322GN AP2322GN abstract |
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