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HA1-2425-5 Intersil Corporation SAMPLE AND HOLD AMPLIFIER, 3.2us ACQUISITION TIME, CDIP14 visit Intersil
HA4P2425-5 Intersil Corporation SAMPLE AND HOLD AMPLIFIER, 3.2us ACQUISITION TIME, PQCC20 visit Intersil
HA3-2425-5 Intersil Corporation SAMPLE AND HOLD AMPLIFIER, 3.2us ACQUISITION TIME, PDIP14, PLASTIC, DIP-14 visit Intersil
HA9P2425-5 Intersil Corporation SAMPLE AND HOLD AMPLIFIER, 3.2us ACQUISITION TIME, PDSO14 visit Intersil
TLE2425CPS Texas Instruments Precision Virtual Ground 8-SO visit Texas Instruments
TLE2425MD Texas Instruments Precision Virtual Ground 8-SOIC -55 to 125 visit Texas Instruments

al 60 dv 2425

Catalog Datasheet MFG & Type PDF Document Tags

AL 2450 dv

Abstract: AL 2425 dv iron core can cause severe inrush currents. The peak switching relay al- Solid State Relay , 4 to 32 VDC RC 2410 -D 06 RC 2425 -D 06 RC 2450 -D 06 4 to 32 VDC RC 4410 -D 12 RC , =1-10 ms Critical dI/dt On-state voltage drop @ rated current Critical dV/dt commutating Critical dV , 14.6 10.9 3 1 - - - - - - 1 20 30 40 50 60 70 - - - - 18.7 14 20 30 40 50 60 70 TA Ambient temp. [°C] TA Ambient
Carlo Gavazzi
Original

AL 2425 dv

Abstract: 72558 -2055 HA-2055A HA-2065 HA-2065A HA-2405 HA-2425 HA-2505 HA-2515 HA-2525 HA-2535 UNITS INPUT CHARACTERISTICS Offset Voltage 7.5 55 12 65 17 65 15 11 8 10 14 14 5 mV Drift (Typ.) IS 60 40 60 40 60 40 30 5 20 30 20 5 JiV/°C Bias Current 750 1 1 1 1 1 1 500 400 500 500 500 200 nA Offset , 8.0 8.0 6.0 6.0 6.0 5.0 6.0 6.0 6.0 6 mA Power Supply Rejection Ratio 74 70 70 70 70 70 70 74 74 74 , 200 to 2,000 (3) 200 Rise Time (1) 60 45 30(3) 60(3) 40(3) (2) 2,000(3) 200 (3) 20(3) (2) 200(3
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AL 2425 dv 72558 toa8709 MC1554 TOA8 mA702 HA-911 HA-20 HA-2005A HA-2055 HA-2425

hi pot test sheets

Abstract: al 60 dv 2425 -2055 HA-2055A HA-2065 HA-2065A HA-2405 HA-2425 HA-2505 HA-2515 HA-2525 HA-2535 UNITS INPUT CHARACTERISTICS Offset Voltage 7.5 55 12 65 17 65 15 11 8 10 14 14 5 mV Drift (Typ.) IS 60 40 60 40 60 40 30 5 20 30 20 5 JiV/°C Bias Current 750 1 1 1 1 1 1 500 400 500 500 500 200 nA Offset , 8.0 8.0 6.0 6.0 6.0 5.0 6.0 6.0 6.0 6 mA Power Supply Rejection Ratio 74 70 70 70 70 70 70 74 74 74 , 200 to 2,000 (3) 200 Rise Time (1) 60 45 30(3) 60(3) 40(3) (2) 2,000(3) 200 (3) 20(3) (2) 200(3
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hi pot test sheets al 60 dv 2425 CD4046 MPC16S teledyne philbrick 1430 40VI/J

MA776

Abstract: MC1554 SHM-1C-1 HA-2425 A1 Exar XR215 HA-2820/2825 C3 XR1488 HD-1488 A1 XR1489A HD-1489A Al 'K" , (1} 2.5 (1) 1.7 (1) 1.7 (1) 8.0 (1)8.0 (1) 6.0 (1) 6.0 (1)6.0 5.0 6.0 6.0 6.0 6.0 mA Power Supply , 8 to 10 .3 li\ll° C Bias Current 400 500 100 30 60 35 60 200 50 200 50 10 to 40 10 to 40 1 nA Offset Current 50 100 20 30 60 35 60 (2) 35 60 30 7.5 to 20 7.5 to 20 .5 nA Common Mode Range ±10  , Time (1) 50 50 40 60 60 45 45 30(3) 60(3) 40(3) (2) 200 to 2,000(3) 200 to 2,000(3) 200(3) ns
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HA-909 HA-2500 HA-2502 HA-2510 HA-2512 HA-2520 MA776 HA-29Q0 Exar cross MC148 peak lm 1458 ca3078

d2p smd code

Abstract: long term reliability Values 40 60 1000 0.58 V A V · · · · Case Styles 48CTQ060 , 48CTQ060S 48CTQ060-1 60 Voltage Ratings Parameters VR Max. DC Reverse V oltage (V) V rwm Max. W , , (test signal range 10OKhz to 1Mhz) 2 5 °C M easured lead to lead 5mm from package body dv/dt Max. V , Max. S torageTem perature Range M ax.Therm al ResistanceJunction to C ase (Per Leg) M ax.Therm al ResistanceJunction to C ase (Per Package) TypicalTherm al R esistance,C ase to H eatsink Approximate W eight
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d2p smd code PD-20545
Abstract: signal range 10OKhz to 1Mhz) 2 5 °C M easured lead to lead 5mm from package body dv/dt Max. V oltage , perature Range M ax.Therm al ResistanceJunction to C ase (Per Leg) M ax.Therm al ResistanceJunction to C ase (Per Package) TypicalTherm al R esistance,C ase to H eatsink Approximate W eight MountingTorque , © $ 20 40 60 80 100 Reverse V oltag e - V R (V) Fig. 2 -Typical Values O f Reverse C , ) 10 40 60 80 100 Reverse V o lta g e - V R(V) F ig .3 -T ypical Junction Capacitance Vs. Reverse V -
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PD-20542 43CTQ 43CTQ080 43CTQ080S 43CTQ080-1 43CTQ100

d2p smd code

Abstract: 60 Voltage Ratings Parameters VR Max. DC Reverse V oltage (V) V rwm Max. W orking Peak R , , (test signal range 10OKhz to 1Mhz) 2 5 °C M easured lead to lead 5mm from package body dv/dt Max. V , torageTem perature Range M ax.Therm al ResistanceJunction to C ase (Per Leg) M ax.Therm al ResistanceJunction to C ase (Per Package) TypicalTherm al R esistance,C ase to H eatsink Approximate W eight , 60 Reverse V o lta g e -V R (V) Fig. 2 -Typical Values O f Reverse C urrent Vs. Reverse V oltage
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30CTQ 30CTQ050 30CTQ050S 30CTQ050-1 30CTQ060 30CTQ060S

AL 2425 dv

Abstract: S16C to lead 5mm from package body dv/dt Max. V oltage Rate of Change (1) Pulse Width < 300ps, Duty , Range Max. S torageTem perature Range M ax.Therm al ResistanceJunction to C ase (Per Leg) M ax.Therm al ResistanceJunction to C ase (Per Package) TypicalTherm al R esistance,C ase to Heatsink Approximate W eight , Pulse D u ra tio n (S e c o n d s ) F ig.4 -M ax. Therm al Impedance Z(hJC Characteristics (P erLeg , th e quantity. Q ua n titie s are in m ultiples of 800 60 (2 .3 6 2 ) D IA . M IN . p ie c e s per
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S16C 16CTQ 16CTQ080 16CTQ080S 16CTQ080-1 16CTQ100 16CTQ100S
Abstract: (P erLeg) (1) 1.5 310 60 45 306 25 °C V R = rated V R > > LO II cr TJ = 125 °C TJ = 125 °C , lead 5mm from package body dv/dt Max. V oltage Rate of C hange (Rated V r) Thermal-Mechanical , ax.Therm al ResistanceJunction to C ase (Per Leg) M ax.Therm al ResistanceJunction to C ase (Per Package) TypicalTherm al R esistance,C ase to Heatsink Approximate W eight M ountingTorque T s,tg D th J C , erLeg) t ] , R e c ta n g u la r Pulse D u ra tio n (S e c o n d s ) F ig .4 -M ax. Therm al -
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PD-20540 47CTQ020 47CTQ020S 47CTQ020-1
Abstract: urrent (P erLeg) (1) 1.5 310 60 45 306 25 °C V R = rated V R > > LO II TJ = 125 °C TJ = 125 °C , easured lead to lead 5mm from package body dv/dt Max. V oltage Rate of C hange (Rated V R , °c/w Conditions thJC M ax.Therm al ResistanceJunction to C ase (Per Leg) thJC M ax.Therm al ResistanceJunction to C ase (Per Package) DCoperation DCoperation ^thCS TypicalTherm al R esistance,C ase to , D u ra tio n (S e c o n d s ) F ig .4 -M ax. Therm al Impedance Z(hJCC haracteristics (PerLeg -
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Abstract: signal range 10OKhz to 1Mhz) 2 5 °C M easured lead to lead 5mm from package body dv/dt Max. V oltage , al ResistanceJunction to C ase (Per Leg) M ax.Therm al ResistanceJunction to C ase (Per Package) TypicalTherm al R esistance,C ase to H eatsink Approximate W eight MountingTorque T s,tg D th J C DC , V FM (V ) 40 60 80 100 120 140 160 R everse V o ltage - V p (V) F ig. 1 - Max. Forward V , u r a t io n ( S e c o n d s ) F ig.4 -M ax. Therm al Impedance Z(hJC C haracteristics (P erLeg -
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10CTQ150 10CTQ150S 10CTQ150-1

CD4046 analog devices

Abstract: ha1-2625-5 SHM-1C-1 HA-2425 A1 Exar XR215 HA-2820/2825 C3 XR1488 HD-1488 A1 XR1489A HD-1489A Al 'K" , CHARACTERISTICS Supply Current (1} 2.5 (1) 1.7 (1) 1.7 (1) 8.0 (1)8.0 (1) 6.0 (1) 6.0 (1)6.0 5.0 6.0 6.0 6.0 6.0 mA Power Supply Rejection Ratio 80 80 80 74 74 74 74 80 80 80 74 80 74 dB FUNCTIONAL , ) 15 8 5 8 to 10 8 to 10 .3 li\ll° C Bias Current 400 500 100 30 60 35 60 200 50 200 50 10 to 40 10 to 40 1 nA Offset Current 50 100 20 30 60 35 60 (2) 35 60 30 7.5 to 20 7.5 to 20 .5 nA Common Mode
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HA-2522 HA-2600 HA-2602 HA-2620 HA-2000 CD4046 analog devices ha1-2625-5 CM 2530 motorola HA2055A HA-2622 HA-2050

al 60 dv 2425

Abstract: Non-repetitive peak on-state current at 50 Hz at 60 Hz M EC H AN IC AL D A T A Fig. 1 SOT-186 4.4 max 600 600 , mA mA mA mA mA mA mA t = VDWMmax dV co m /dt dV Co m /d t dV com /dt ID typ. < typ , 2425 Fig.7 On-state voltage drop ( V j) versus on-state current ( l j ) ; T j = 25 ° C ; T j = 120
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BT136F BT136F--500 D8387 D8573

eaxxxxx

Abstract: (DSP) - '320C40-60: 33-ns Instruction Cycle Time, 330 MOPS, 60 MFLOPS, 30 MIPS, 384M B ytes/s - , of 120M Bytes/s ('C40-60) (Each Bus) - 16G-Byte Continuous Program /D ata/Peripheral Address Space - , )* AR AP AN AM AL AK AJ AH AG AF AE AD AC AB AA ®®@®®®®®®®®®®®®®®® ®®®®®®®®®®®®®®®®® ®®®®®®®®®@ , im pedance Signal's effective address range is defined by the loca l/g lo b al STRB ACTIVE bits , C33 H30 E31 NAME D31 DE DVq d DV q q DV q d DV q d DV q d DV q q DV q d DVq d PIN NO. F32 AA31 AR11
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eaxxxxx TMS320C40 320C40-50 320C40-40 IEEE-754 TMS320C3 C40-60

AL 2450 dv circuit diagram

Abstract: 385b1 - - 60 - - 60 - - 20 - - 20 - 2.462 2.415 - - 2.5 - - - 2.538 2.585 - - 2.462 2.436 2.425 2.400 2.5 - 2.5 - 2.538 2.564 2.575 , DV(BR)R Z DV(BR)/DT Wideband Noise (RMS) IR = 100 mA, 10 Hz v f v 10 kHz n Long Term , 20 - - 20 - mV DV(BR)R Z W ppm/°C DV(BR)/DT Wideband Noise (RMS) IR = , ) 1.2 1.4 10 8.0 TA = +85°C 6.0 +25 °C 4.0 -40 °C 2.0 0 -2.0 0.01 0.1
ON Semiconductor
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LM285 LM385B LM385 AL 2450 dv circuit diagram 385b1 AL 2425 dv circuit diagram LM385D-1 25R2G 385b2 LM285/LM385 LM285/D

AL 2450 dv circuit diagram

Abstract: AL 2425 dv circuit diagram - - 60 - - 60 - - 20 - - 20 - 2.462 2.415 - - 2.5 - - - 2.538 2.585 - - 2.462 2.436 2.425 2.400 2.5 - 2.5 - 2.538 2.564 2.575 2.600 - - 13 - 20 30 - - 13 - 20 30 Symbol V(BR)R V mA IRmin DV(BR)R mV W Z DV(BR)/DT Wideband Noise (RMS) IR = 100 mA, 10 Hz v f v 10 kHz ppm/°C , 120 - - Symbol 20 - - 20 - DV(BR)R mV W Z DV(BR)/DT Wideband
ON Semiconductor
Original
AL 2450 dv circuit schematic LM285Z LM385/02/03/04LCJ/AL 2425 dv circuit diagram

AL 2450 dv circuit diagram

Abstract: AL 2450 dv 0.6 - - 0.6 - - 80 - - 80 - - 60 - - 60 - - 20 - - 20 - 2.462 2.415 - - 2.5 - - - 2.538 2.585 - - 2.462 2.436 2.425 , Temperature Coefficient 10 mA v IR v 20 mA, TA = Tlow to Thigh (Note 1) V mA IRmin DV(BR)R mV W Z DV(BR)/DT Wideband Noise (RMS) IR = 100 mA, 10 Hz v f v 10 kHz ppm/°C mV n , - DV(BR)R Reverse Dynamic Impedance IR = 100 mA, TA = +25°C Average Temperature Coefficient
ON Semiconductor
Original
AL 2450 dv lm385b12 to-92 AL 2450 dv circuit LM385Z zxxx LM285D

SHM-IC-1

Abstract: AD583 Compatible Logic Input â'¢ HA-2420, HA-2425, SHM-IC-1, and AD583 Socket Compatible â'¢ Available in Die , 8 ARE NOT INTERNALLY CONNECTED, IN UNITY GAIN APPLICATIONS, SMP-10 AND SMP-11 CAN REPLACE HA-2425 , Hold Capacitor Short-Circuit Duration.60 sec Storage Temperature Range.-65°Cto+150°C Lead Temperature (Soldering, 60 sec).300°C Operating Temperature Range SMP , â'ž . SMP-10 - 5 20 - 5 50 - - Droop Rate dVc^dt SMpi1 - 60 200 - 70 500 - 80 900 Input
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SMP10AY SMP10EY SMP10FY SHM-IC-1 SHM-IC SMP-11EY SMP-10/SMP-11 14-PIN SMP11AY-
Abstract: °C Highest Performance Floating-Point Digital Signal Processor (DSP) - 'C40-60: 33-ns Instruction Cycle Time: 60 MFLOPS, 30 MIPS, 330 MOPS, 384 MBps - 'C40-50: 40-ns Instruction Cycle Time: 50 MFLOPS, 25 MIPS , -LEAD HFH Q UAD FLATPACK PACKAGE (TOP V IE W )t AR AP AN AM AL AK AJ AH AG AF AE AD AC AB AA Y W V U T R P , /oscillator pin H1 clock H3 clock POW ER AND GRO UND (70 PINS)§ CVSS DVSS IV s s DV q q G AD V q d GDDVq q , AB32 AB34 AC1 AC3 AC5 AC31 AC33 AC35 AD2 AD4 AD6 NAME GDDVd d VSSL iv s s DV q d C VSS DVSS DV q d DVSS -
OCR Scan
SMJ320C40 TMP320C40 SGUS017E MIL-PRF-38535 C40-40 IEEE-745

ld25 cv

Abstract: Digital Signal Processor (DSP) - 'C40-60: 33-ns Instruction Cycle Time: 60 MFLOPS, 30 MIPS, 330 MOPS, 384 , Incorporated W 9 T rV A C Jf In str u m en ts I On producís compiali lo ML-PRF-38S3S, al parameters , -LEAD HFH QUAD FLATPACK PACKAGE (TOP V IE W )t AR AP AN AM AL AK AJ AH AG AF AE AD AC AB AA Y 325-PIN GF , DV d d DV d d DVDD DV d d DVDD d v dd DV d d DV d d DV d d DV d d d v dd d v dd D8 D9 D10 , IVSS DV qd AD30 AD32 AD34 AE1 AE3 AE5 AE31 AE33 AE35 AF2 AF4 AF6 AF30 AF32 AF34 AG1 AG3 AG5 AG31
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ld25 cv SGUSG17C SMJ320C30 16G-B
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