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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

a1273 transistor

Catalog Datasheet MFG & Type PDF Document Tags

a1273* transistor

Abstract: a1273 transistor Ordering number:ENN5295A NPN Epitaxial Planar Silicon Transistor 2SC4931 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions · Low noise : NF=1.2dB typ (f=1GHz). · High gain : S21e2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ. · Ultrasmall package permitting applied sets to be small and slim. unit:mm 2106A [2SC4931 , '"31.1 400 0.422 â'"106.3 11.887 108.4 0.048 59.7 0.515 â'"37.2 600 0.364 â'"127.3
SANYO Electric
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a1273* transistor a1273 transistor A1273

a1273* transistor equivalent

Abstract: a1273 transistor Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature 212 , .08 .17 .09 PHASE DEV (DEG) 0.00 0.0 0.00 0.00 25.93 8.21 2.13 â'"3.56 â'"7.98 â'"12.73
Agilent Technologies
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a1273* transistor equivalent hp 3586 a1273 transistor DATA A4131 PPA-18632 PP-25 5963-3240E P-222 SN62PRMAB3 5963-3232E

A1273

Abstract: a1273 transistor '"62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction , 119.5 110.9 102.2 93.5 84.5 75.3 66.0 56.6 47.3 38.3 29.6 21.4 13.6 6.2 1.2 â'"127.3
Agilent Technologies
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500MH MIL-HDBK-217E 5963-2532E

a1273* transistor

Abstract: A773* Transistor product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5181 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE , CONNECTIONS °C Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity. Document No , 0.083 S21 ANG â'"71.3 â'"82.5 â'"89.5 â'"98.6 â'"110.3 â'"127.3 â'"140.2 â'"176.6 153.2
Renesas Electronics
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A773* Transistor
Abstract: TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE , '121.5 â'127.3 â'132.9 â'138.0 â'142.8 â'147.1 â'150.7 â'154.2 â'157.7 1.012 1.004 , 0.469 â'86.5 â'127.3 â'145.8 â'157.0 â'163.7 â'169.7 â'173.9 â'177.8 179.4 30.622 Renesas Electronics
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Transistor a1488

Abstract: TRANSISTOR µPA861TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0
NEC
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Transistor a1488 PU10057EJ02V0DS
Abstract: TRANSISTOR µPA860TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0 Renesas Electronics
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PU10067EJ01V0DS

transistor A1024

Abstract: A1712 DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE â' HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES â'¢ Ideal for low noise â' high-gain amplification NF = 0.9 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz â'¢ Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz â'¢ SiGe , '118.6 â'127.3 26.831 25.435 23.040 20.794 18.447 16.501 14.938 13.596 12.356 166.4 150.5
NEC
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transistor A1024 A1712 nec a1232 2SC5761-T2

br a1273 transistor

Abstract: '"1506 â'"1677 Y (µm) â'"1787 â'"1616 â'"1445 â'"1273 â'"1102 â'"973 â'"759 â'"588 â'"417 â
Hitachi Semiconductor
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br a1273 transistor HD404889/HD404899/HD404878/ HD404868 ADE-202-075C HD404889 HD404899 HD404878

THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 . Insulator®,Transistor, Mica . Insulators, Stand O ff. Integrated Circuits , . Mica Washers, Transistor and Diode Microswitches . Modules, Radar . M onitor. . Mounting Pads, Transistor . , Transistors. Transistor Covers. Transistor Hardware . Transistor Insulating Kits Transistor Mounting Pads . . . . Transistor Sockets
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THERMISTORS nsp 037 Thyristor TAG 9118 a1273 y k transistor ICA 0726 0148 Transformer AM97C11CN transistor SK A1104 200X300X360