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a1273 transistor

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Abstract: Ordering number:ENN5295A ENN5295A NPN Epitaxial Planar Silicon Transistor 2SC4931 2SC4931 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions · Low noise : NF=1.2dB typ (f=1GHz). · High gain : S21e2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ. · Ultrasmall package permitting applied sets to be small and slim. unit:mm 2106A [2SC4931 2SC4931 , €“31.1 400 0.422 –106.3 11.887 108.4 0.048 59.7 0.515 –37.2 600 0.364 –127.3 ... SANYO Electric
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4 pages,
37.23 Kb

ENN5295A 2SC4931 TEXT
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Abstract: Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature 212 , .08 .17 .09 PHASE DEV (DEG) 0.00 0.0 0.00 0.00 25.93 8.21 2.13 –3.56 –7.98 –12.73 ... Agilent Technologies
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4 pages,
35.6 Kb

hp 3586 TEXT
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Abstract: €“62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction , 119.5 110.9 102.2 93.5 84.5 75.3 66.0 56.6 47.3 38.3 29.6 21.4 13.6 6.2 1.2 –127.3 ... Agilent Technologies
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6 pages,
50.77 Kb

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Abstract: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5181 2SC5181 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE , CONNECTIONS °C Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity. Document No , 0.083 S21 ANG –71.3 –82.5 –89.5 –98.6 –110.3 –127.3 –140.2 –176.6 153.2 ... Renesas Electronics
Original
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10 pages,
1149.24 Kb

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Abstract: TRANSISTOR 2SC5800 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE , ˆ’121.5 −127.3 −132.9 −138.0 −142.8 −147.1 −150.7 −154.2 −157.7 1.012 1.004 , 0.469 −86.5 −127.3 −145.8 −157.0 −163.7 −169.7 −173.9 −177.8 179.4 30.622 ... Renesas Electronics
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26 pages,
371.67 Kb

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Abstract: TRANSISTOR ÂuPA861TD uPA861TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0 ... NEC
Original
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30 pages,
384.11 Kb

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Abstract: TRANSISTOR ÂuPA860TD uPA860TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0 ... Renesas Electronics
Original
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35 pages,
408.79 Kb

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Abstract: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz • SiGe , ˆ’118.6 −127.3 26.831 25.435 23.040 20.794 18.447 16.501 14.938 13.596 12.356 166.4 150.5 ... NEC
Original
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32 pages,
166.54 Kb

2SC5761 TEXT
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Abstract: €“1506 –1677 Y (Âum) –1787 –1616 –1445 –1273 –1102 –973 –759 –588 –417 â ... Hitachi Semiconductor
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200 pages,
712.51 Kb

HD404889/HD404899/HD404878/ HD404868 ADE-202-075C TEXT
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Abstract: . Insulator®,Transistor, Mica . Insulators, Stand O ff. Integrated Circuits , . Mica Washers, Transistor and Diode Microswitches . Modules, Radar . M onitor. . Mounting Pads, Transistor . , Transistors. Transistor Covers. Transistor Hardware . Transistor Insulating Kits Transistor Mounting Pads . . . . Transistor Sockets ... OCR Scan
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TAA621 a1273* transistor B8708 BC558 TRANSISTOR REPLACEMENT K1603 LM327 of RAS 0510 of 5 volts ot112 5V LP 1 FA DIL Reed Relay NJM 2068 LD TEXT
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