500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
PMP4154 Texas Instruments 80V dc Input, 2-Channel, 350mA LED Driver (10V to 60V String) visit Texas Instruments
PMP4936 Texas Instruments 50Vdc-60Vdc Input, 2-Channel, 350mA LED Driver (10V to 40V String) visit Texas Instruments
PMP6877 Texas Instruments Automotive input range (10V - 50V) SEPIC LED driver visit Texas Instruments
PMP4791 Texas Instruments 55Vdc-80Vdc Input, 2-Channel, 350mA LED Driver (10V to 50V String) visit Texas Instruments
TPS92001DGKR Texas Instruments General Purpose PWM Controller with 10V Turn-on Threshold for LED Lighting 8-VSSOP -40 to 105 visit Texas Instruments Buy
TPS92001DR Texas Instruments General Purpose PWM Controller with 10V Turn-on Threshold for LED Lighting 8-SOIC -40 to 105 visit Texas Instruments Buy

Zener diode D3 10V

Catalog Datasheet MFG & Type PDF Document Tags

220vac to 110vac voltage converter schematic

Abstract: schematic diagram converter input 220v to 24v used in D3 is a 10V zener diode. If lower output voltages like 5V are desired, R1 cannot be removed , appropriate 2W zener diode in parallel to D2 in the space provided on the demoboard (D3). Specifications , the HV9922DB2 for a zener diode (D3) in parallel with the existing 22V zener diode. By soldering in , is sourced into an output zener diode. On the demoboard, a 22V zener diode is used at D2 to regulate , dissipation in the zener diode, which causes the zener voltage to drift. This drift will eventually settle
Supertex
Original
220vac to 110vac voltage converter schematic schematic diagram converter input 220v to 24v Circuit diagram of 1W LED drive input 220vac 220v DC to 110v DC using resistor circuit diagram 220v AC to 110v AC using resistor circuit diagram 220vac to 220vac voltage converter schematic

diode zener 600v 1a

Abstract: 220vac to 110vac voltage converter schematic zener diode (D3) in parallel with the existing 22V zener diode. By soldering in an appropriate 2W , inductor to go into saturation. Thus, if R1 is eliminated, the minimum zener diode that can be used in D3 is a 10V zener diode. If lower output voltages like 5V are desired, R1 cannot be removed. Load , constant 50mA current source which is sourced into an output zener diode. On the demoboard, a 22V zener , obtained by using an appropriate 2W zener diode in parallel to D2 in the space provided on the demoboard
-
Original
FK20X7R2E224K diode zener 600v 1a zener 400v 10v ZENER DIODE zener diode testing circuit 1W 10V ZENER DIODE Zener diode D3 10V 85VAC MUR160 B37987F5104K054 ECQ-E4104KF ECQ-E4333KF

ZENER DIODE 0.5v

Abstract: led constant current driver 500mA . 6 placing a zener diode D3 in series with D2 as shown in Figure 4. When using a series zener , turns on (TON), the switch pin rises to: An alternate method is to place the zener diode D3 in a , -3 Central Semiconductor D3, Zener Diode 4.7V, 350mW, SOT-23 BZX84C4V7 Fairchild L1 6.8µH , LM3405A 30015249 FIGURE 17. VBOOST derived from VIN through a Series Zener Diode (D3) ( VIN = 15V , , 0.36V at 15mA CMDSH-3 Central Semiconductor D3, Zener Diode 11V, 350mW, SOT-23 BZX84C11
National Semiconductor
Original
ZENER DIODE 0.5v led constant current driver 500mA zener diode 4.7V LXHL-PW09 LED MR16 lamp LXK2-PW14

LXK2-PW14

Abstract: GRM319R71A105KC01D maximum operating limit of 5.5V. 6 placing a zener diode D3 in series with D2 as shown in Figure , zener diode D3 in a shunt configuration as shown in Figure 5. A small 350mW to 500mW, 5.1V zener in a , LM3405A 30015244 FIGURE 16. VBOOST derived from VIN through a Shunt Zener Diode (D3) ( VIN = 18V , Semiconductor D3, Zener Diode 4.7V, 350mW, SOT-23 BZX84C4V7 Fairchild L1 6.8µH, 1.5A , LM3405A 30015249 FIGURE 17. VBOOST derived from VIN through a Series Zener Diode (D3) ( VIN = 15V
National Semiconductor
Original
GRM319R71A105KC01D 1n4148 zener diode Type NS ceramic cap ECJ3YB1E106K ERJ8BQFR27 wsl2010r2000fea
Abstract: not exceed the maximum operating limit of 5.5V. 6 placing a zener diode D3 in series with D2 as , method is to place the zener diode D3 in a shunt configuration as shown in Figure 5. A small 350mW to , 30015244 FIGURE 16. VBOOST derived from VIN through a Shunt Zener Diode (D3) ( VIN = 18V, IF = 1A , -3 Central Semiconductor D3, Zener Diode 4.7V, 350mW, SOT-23 BZX84C4V7 Fairchild L1 6.8µH , www.national.com LM3405A 30015249 FIGURE 17. VBOOST derived from VIN through a Series Zener Diode (D3 National Semiconductor
Original

STU10NC70Z

Abstract: STU10NC70ZI . A 37.6 A 1.6 V 660 ns 8.7 µC 26 A GATE-SOURCE ZENER DIODE Symbol , ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 , Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher , dv/dt(q) Peak Diode Recovery voltage slope 3 V/ns VISO Insulation Winthstand Voltage , RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 5.3A ID(on) On State Drain
STMicroelectronics
Original
STU10NC70Z STU10NC70ZI 220/I-M P011S STU10NC70Z/STU10NC70ZI

Zener diode D3 10V

Abstract: capacitor 100uF/25V Schottky diode 47V BZX84C47 zener diode 7V5 BZX84C7V5 zener diode 10m 1206 5% tol. 0.75 1206 5% tol , + DRIVE VCC C2 47uF 100V C3 100nF 100V PWM STDN GND C4 1uF 10V SENSE D3 VFB D4 R1 10m R1 20k R5 10k LED cathode R2 0.75 Bill of materials Qty. Part ref. 6 VIN,VCC,GND, PWM, LED anode, LED cathode 1 U1 1 U2 1 Q1 1 D1 2 D2, D3 1 D4 1 R1 , cap 1F/10V 1uF/10V/0805/X7R 1 Suggested source Rapid 17-1835 Zetex Zetex Zetex
Zetex Semiconductors
Original
ZXSC400 capacitor 100uF/25V philips zener diode capacitor 100nf 25v 0805 zxsc400e6 C2 6 zener diode diode zener 100v ZXSC400EV2 ZXMN10A09K ZXTD6717E6 ZXSC400E6 10BQ100

25W led driver circuit diagram

Abstract: capacitor 100nf 100v Schottky diode 47V Zener diode 47V Zener diode 7V5 Zener diode 68uH/3.5A SMT Inductor 1206 5 , ST DN C2 47uF/100V U1 PWM GND D3 R1 VFB BZX84C47 10m Ohm C4 1uF/10V R3 , C3 47uF/100V U1 100nF/100V DRIVE PWM ST DN GND SENSE D3 R1 VFB BZX84C47 10m Ohm C4 1uF/10V R3 D4 R5 BZX84C7V5 10k LED CATHODE 20k R2 0.75 , 100nF/100V DRIVE ST DN C2 47uF/100V U1 PWM GND D3 R1 VFB BZX84C47 10m Ohm
Zetex Semiconductors
Original
25W led driver circuit diagram capacitor 100nf 100v schematic diagram PWM 24V Circuit diagram of 25W LED drive led driver philips schematic tv led driver circuit diagram D6717E6 F/25V F/100V F/10V D-81673
Abstract: - VSW should not exceed the maximum operating limit of 5.5V. 6 placing a zener diode D3 in , : An alternate method is to place the zener diode D3 in a shunt configuration as shown in Figure 5. A , Shunt Zener Diode (D3) ( VIN = 18V, IF = 1A ) Bill of Materials for Figure 16 Part ID Part Value , Schottky, 0.36V at 15mA CMDSH-3 Central Semiconductor D3, Zener Diode 4.7V, 350mW, SOT , through a Series Zener Diode (D3) ( VIN = 15V, IF = 1A ) Bill of Materials for Figure 17 Part ID National Semiconductor
Original

STU9NC80Z

Abstract: STU9NC80ZI . A 34.4 A 1.6 V 730 ns 7.2 µC 19.5 A GATE-SOURCE ZENER DIODE Symbol , , voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes , Gate-source Current ±50 mA Gate source ESD(HBM-C=100pF, R=15K) 4 KV dv/dt(q) Peak Diode , RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 4.7A ID(on) On State Drain
STMicroelectronics
Original
STU9NC80Z STU9NC80ZI STU9NC80Z/STU9NC80ZI

Zener diode D3 10V

Abstract: bs 3550 Recovery Current (s) ct GATE-SOURCE ZENER DIODE du o Symbol BVGSO T Parameter , TYPICAL RDS(on) = 1.1 EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED , integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability , Gate-source Current ±50 mA Gate source ESD(HBM-C=100pF, R=15K) 4 KV dv/dt(q) Peak Diode , VGS = 10V, ID = 3.8A VDS > ID(on) x RDS(on)max, VGS = 10V s) t( Max. 1 VDS = Max
STMicroelectronics
Original
STU8NC90Z STU8NC90ZI STU9NC90ZI bs 3550 STU8NC90Z/STU8NC90ZI

6A ZENER DIODES

Abstract: zenerprotected 24 A GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Test Conditions Min. Typ , < 1.38 7A 7A TYPICAL RDS(on) = 1.1 EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES , voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes , ESD(HBM-C=100pF, R=15K) dv/dt(q) Peak Diode Recovery voltage slope VISO Insulation , On Resistance VGS = 10V, ID = 3.8A ID(on) On State Drain Current VDS > ID(on) x RDS(on
STMicroelectronics
Original
6A ZENER DIODES zenerprotected

STU10NC70Z

Abstract: STU10NC70ZI Max. A 37.6 A 1.6 V 660 ns 8.7 µC 26 A GATE-SOURCE ZENER DIODE , ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 , Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher , 0.44 W/°C ±50 Gate source ESD(HBM-C=100pF, R=15K) dv/dt(q) Peak Diode Recovery voltage , DS(on) Static Drain-source On Resistance VGS = 10V, ID = 5.3A ID(on) On State Drain
STMicroelectronics
Original

STU9NC80ZI

Abstract: STU9NC80Z Conditions Min. Typ. Max. 8.6 34.4 1.6 Unit A A V ns µC A GATE-SOURCE ZENER DIODE Symbol BVGSO T Rz , TYPICAL RDS(on) = 0.82 EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED , on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such , ESD(HBM-C=100pF, R=15K) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage , Resistance On State Drain Current Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 4.7A VDS > ID(on) x
STMicroelectronics
Original
Abstract: =15K) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature 26 18.9 120 , Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 13A Min. 3 Typ. 4 0.100 Max. 5 0.120 Unit V , Gate-Drain Charge Test Conditions VDD = 250V, I D = 13A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 400V, I D = 26A, VGS = 10V Min. Typ. 28 25 76 20 36 106 Max. Unit ns ns nC nC nC SWITCHING OFF , 400V, I D = 26A, R G = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 13 19 36 Max. Unit ns ns STMicroelectronics
Original
220/M STU26NM50 STU26NM50I STU26NM50/STU26NM50I

STU8NC90Z

Abstract: STU8NC90ZI ) Max. A 28 A 1.6 V 860 ns 10 µC 24 A GATE-SOURCE ZENER DIODE , < 1.38 7A 7A TYPICAL RDS(on) = 1.1 EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES , voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes , ±50 mA Gate source ESD(HBM-C=100pF, R=15K) 4 KV dv/dt(q) Peak Diode Recovery voltage , Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID
STMicroelectronics
Original

STU9NC80Z

Abstract: stu9nc80zi circuit, Figure 5) IRRM Reverse Recovery Current (s) ct GATE-SOURCE ZENER DIODE du o , A TYPICAL RDS(on) = 0.82 EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100 , integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability , Gate-source Current ±50 mA Gate source ESD(HBM-C=100pF, R=15K) 4 KV dv/dt(q) Peak Diode , 4 5 V 0.82 VGS = 10V, ID = 4.7A VDS > ID(on) x RDS(on)max, VGS = 10V s) t
STMicroelectronics
Original

IC spnb

Abstract: LXHL-PW09 maximum operating limit of 5.5V. 6 placing a zener diode D3 in series with D2 as shown in Figure , zener diode D3 in a shunt configuration as shown in Figure 5. A small 350mW to 500mW, 5.1V zener in a , derived from VIN through a Shunt Zener Diode (D3) ( VIN = 15V, IF = 1A ) Bill of Materials for Figure , Vishay D2, Boost Diode Schottky, 0.36V at 15mA CMDSH-3 Central Semiconductor D3, Zener , FIGURE 18. VBOOST derived from VIN through a Series Zener Diode (D3) ( VIN = 15V, IF = 1A ) Bill of
National Semiconductor
Original
LM3405 IC spnb LM3405XMK LM3405XMKX vishay zener diode 1A 30v 1N4148

LXHL-PW09

Abstract: panasonic diode Diode D2, Boost Diode D3, Zener Diode L1 R1 R2 LED1 Part Value 1A LED Driver 10µF, 25V, X5R 1µF, 10V , certain range. For the calculation of VOUT, see OUTPUT VOLTAGE section. placing a zener diode D3 in , An alternate method is to place the zener diode D3 in a shunt configuration as shown in Figure 5. A , derived from VIN through a Shunt Zener Diode (D3) ( VIN = 15V, IF = 1A ) Bill of Materials for Figure , www.national.com LM3405 20178949 FIGURE 18. VBOOST derived from VIN through a Series Zener Diode (D3
National Semiconductor
Original
panasonic diode SNVS429A
Abstract: ) Total Dissipation at TC = 25°C Gate source ESD(HBM-C=100pF, R=15K) Derating Factor Peak Diode Recovery , Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 13A Min. 3 Typ. 4 , VGS = 10V (see test circuit, Figure 3) VDD = 400V, I D = 26A, VGS = 10V Min. Typ. TBD TBD 90 TBD TBD , Time Cross-over Time Test Conditions VDD = 400V, I D = 26A, R G = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. TBD TBD TBD Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr STMicroelectronics
Original
Showing first 20 results.