ZX200 Datasheet
| Part | Manufacturer | Description | Type | |
|---|---|---|---|---|
| ZX200 | Diotec | Silicon Power Zener Diode |
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Original |
| ZX200 | Diotec | Silicon Power Zener Diodes (non-planar technology) |
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Original |
| ZX200 | Micronas Semiconductor | 10 Watt Stud Mounted Zener Diodes, Metal Case |
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Scan |
| ZX200 | N/A | Shortform Semicon, Diode, and SCR Datasheets |
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Scan |
| ZX200 | N/A | Shortform Electronic Component Datasheets |
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Scan |
ZX200
| Catalog Datasheet | MFG & Type | Document Tags | |
|---|---|---|---|
ZX24Abstract: ZX27 cbï ZX3.9 . ZX200 (12.5 Wà Silicon Power Zerier uicxles for usein stabilizing and , Rrt\i\ - - 80 K/W ZX3,9 . . ZX200 (12.5 W) Typt Zener voltage'' ai 123! V. V Dynamic tonfe.vcp f , 6.3 51 ZX180 168. 191 150 (90 5.7 46 ZX200 188 .212 150 ( , . mm. ZX3.9 . . ZX200 (12.5 W) Dynamic resistane« versus Zener current 5ûW l2 Thermal , Zener Voltage 7X. A / 100 V Vz ÃI .specified rn«:t Cuireftt l¿ ZX3,9 . . . ZX200 (12.5 W |
- OCR Scan |
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ZX24 ZX27 ZX12 ZX5.1 ZX4.7 |
ZX5.6Abstract: ZX24 ZX5.6 . ZX200 (12.5 W) ZX5.6 . ZX200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Version 2007-11-22 7 Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage Nominale Z-Spannung Metal case Metallgehäuse Weight approx. Gewicht ca , / © Diotec Semiconductor AG 1 ZX5.6 . ZX200 (12.5 W) Maximum ratings Type Typ Zener voltage , ZX130 ZX150 ZX160 ZX180 ZX200 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 |
Diotec Original |
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ZX5.6 ZX11 ZX33 ZX10R |
zx39Abstract: ZX12 ZX10 . ZX200 (12.5 W) ZX10 . ZX200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Version 2008-04-09 Maximum power dissipation Maximale Verlustleistung 7 Nominal Z-voltage Nominale Z-Spannung 10 Ø2 30 Type 12.5 W 10 SW11 , 150 cm2 © Diotec Semiconductor AG http://www.diotec.com/ 1 ZX10 . ZX200 (12.5 W , 5 120 (90 7 59 ZX200 188 212 5 150 ( |
Diotec Original |
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ZX100 zx39 Z-Diode ZX30 Zener Diode zx12 ZX15 ZX22 ZX36 ZX110 ZX120 |
ZX12Abstract: ZX6.8 ZX5.6 . ZX200 (12.5 W) ZX5.6 . ZX200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Version 2006-04-27 Maximum power dissipation Maximale Verlustleistung 7 Nominal Z-voltage Nominale Z-Spannung 10 Ø2 30 Type 12.5 W 10 SW11 , 150 cm2 © Diotec Semiconductor AG http://www.diotec.com/ 1 ZX5.6 . ZX200 (12.5 W , 5 120 (90 7 59 ZX200 188 212 5 150 ( |
Diotec Original |
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ZX6.8 ZX7.5 ZX8.2 ZX62 ZX6.2 ZX18 |
ZX8.2Abstract: ZX12 ZX3.9 . ZX200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Version 2004-10-01 7 Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage Nominale Z-Spannung Metal case Metallgehäuse 12.5 W 3.9.200 V DO-4 5.5 g Ø2 30 Type 10 , ZX200 (12.5 W) Maximum ratings Type Typ Zener voltage ) Zener-Spanng.1) IZ = IZtest VZmin [V] VZmax 1 , ZX43 ZX47 ZX51 ZX56 ZX62 ZX68 ZX75 ZX82 ZX91 ZX100 ZX110 ZX120 ZX130 ZX150 ZX160 ZX180 ZX200 3.7 4.0 |
Diotec Original |
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ZX56 ZX16 |
| Abstract: ZX200 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V(Z) Nom.(V) Reference Voltage180 @I(Z) (A) (Test Condition)5m Tolerance (%)6 P(D) Max. (W)12 Z(z) Max. (ê) Dyn. Imped.350 Temp Coef pp/10k11 Maximum Operating Temp (øC)150Ãu Package StyleDO-4 Mounting StyleT American Microsemiconductor |
American Microsemiconductor Original |
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ZX12Abstract: ITT Semiconductors zx33 153-171 350 +0.11 5 75 6.3 51 ZX180 168-191 350 +0.11 5 90 5.7 46 ZX200 188-212 350 +0.11 5 90 5.2 42 |
- OCR Scan |
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ITT Semiconductors zx33 itt zx15 itt zx10 itt zx12 zx27 itt ZX13 |
ZX70Abstract: ZX100 1.0 5000 0.45 3.5 ZX100 100 100 7 1.5 11250 0.30 12~14 2500 (4h) XD3 ZX200 200 1.6 14 3.0 |
- OCR Scan |
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ZX300 ZX400 ZX500 ZX860 ZX70 ZX25 ZX40 W3800V |
BA159 equivalentAbstract: B80C1500-1000 .2 1) ZX9.1 1) ZX110 1) ZX120 1) ZX130 1) ZX150 1) ZX160 1) ZX180 1) ZX200 1) ZX13 1) ZX15 1 , ) ZX120 1) ZX130 1) ZX150 1) ZX160 1) ZX180 1) ZX200 1) Z Z Z Z Z Z Z Z Z Z Z Z Z Z , 1 1N4233/A/B 1N4235/A/B 1N4238/A/B 1N4239/A/B ZX130 ZX150 ZX180 ZX200 1N4245/GP |
- Original |
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BA159 equivalent B80C1500-1000 BYS26-45 equivalent sb5100 B380C2000/1500 1N5048 1A01/G 1A02/G 1A03/G 1A04/G 1A05/G 1A06/G |
KP500 THYRISTORAbstract: KP500 3.5 ZX100 100 100 7 1.5 11250 0.30 12â'"14 2500 (4h) XD3 ZX200 200 1.6 '"w 14 3.0 45000 0.20 150 |
- OCR Scan |
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KP500 THYRISTOR KP500 KP800 KP300 kp1500 kp 100 thyristor |
QSH-060-01-F-D-AAbstract: Zx224 zx2000 . . . . . . . . . . . . . . . . . . . . . . . . HP zx6000 . . . . . . . . . . . . . . . . . . . . |
ARM Original |
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ARM926EJ-S QSH-060-01-F-D-A Zx224 Z123 Diode intel Z68 MOTHERBOARD pcb CIRCUIT diagram INTERNAL ARCHITECTURE OF ARM1136 Microprocessor z85 HBI-0131 CT926EJ-S CT1136JF-S HBI-0141 0273F ID042109 |
advantage zx6 user manualAbstract: TNY176 ZX10 . ZX200 (12.5 W) ZX10 . ZX200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Version 2008-04-09 Maximum power dissipation Maximale Verlustleistung 7 Nominal Z-voltage Nominale Z-Spannung 10 Ø2 30 Type 12.5 W 10 SW11 , 150 cm2 © Diotec Semiconductor AG http://www.diotec.com/ 1 ZX10 . ZX200 (12.5 W , 5 120 (90 7 59 ZX200 188 212 5 150 ( |
ARM Original |
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ARM11 advantage zx6 user manual TNY176 advantage zx6 manual advantage zx6 tny175 HBI-0146 0318F |
FD6666 diodeAbstract: diode BY100 1.0 5000 0.45 3.5 ZX100 100 100 7 1.5 11250 0.30 12~14 2500 (4h) XD3 ZX200 200 1.6 14 3.0 |
- OCR Scan |
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AA119 FD6666 diode diode BY100 BY164 BB139 BA100 diode BAY38 A4/10 A5/62 A5/105 A1000 AA100 AA110 |
BA100 diodeAbstract: BA102 153-171 350 +0.11 5 75 6.3 51 ZX180 168-191 350 +0.11 5 90 5.7 46 ZX200 188-212 350 +0.11 5 90 5.2 42 |
- OCR Scan |
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1N4004 BA102 B2M1-5 BB105 OA210 diode GAZ17 1N1695 AA111 AA112 AA113 AA114 AA115 AA116 |