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Part : RLD65NZX2-00A Supplier : ROHM Manufacturer : Avnet Stock : - Best Price : - Price Each : -
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Part : OETL-ZX200A Supplier : ABB Manufacturer : Newark element14 Stock : - Best Price : $59.63 Price Each : $68.70
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ZX200 Datasheet

Part Manufacturer Description PDF Type
ZX200 Diotec Silicon Power Zener Diode Original
ZX200 Diotec Silicon Power Zener Diodes (non-planar technology) Original
ZX200 Micronas Semiconductor 10 Watt Stud Mounted Zener Diodes, Metal Case Scan
ZX200 N/A Shortform Semicon, Diode, and SCR Datasheets Scan
ZX200 N/A Shortform Electronic Component Datasheets Scan

ZX200

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: cbï ZX3.9 . ZX200 (12.5 WÌ Silicon Power Zerier uicxles for usein stabilizing and , Rrt\i\ - - 80 K/W ZX3,9 . . ZX200 (12.5 W) Typt Zener voltage'' ai 123! V. V Dynamic tonfe.vcp f , 6.3 51 ZX180 168. 191 150 (90 5.7 46 ZX200 188 .212 150 ( , . mm. ZX3.9 . . ZX200 (12.5 W) Dynamic resistane« versus Zener current 5ûW l2 Thermal , Zener Voltage 7X. A / 100 V Vz ÛI .specified rn«:t Cuireftt l¿ ZX3,9 . . . ZX200 (12.5 W -
OCR Scan
ZX24 ZX27 ZX12 ZX5.1 ZX4.7
Abstract: ZX5.6 . ZX200 (12.5 W) ZX5.6 . ZX200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Version 2007-11-22 7 Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage Nominale Z-Spannung Metal case Metallgehäuse Weight approx. ­ Gewicht ca , / © Diotec Semiconductor AG 1 ZX5.6 . ZX200 (12.5 W) Maximum ratings Type Typ Zener voltage , ZX130 ZX150 ZX160 ZX180 ZX200 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 Diotec
Original
ZX5.6 ZX11 ZX33 ZX10R
Abstract: ZX10 . ZX200 (12.5 W) ZX10 . ZX200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Version 2008-04-09 Maximum power dissipation Maximale Verlustleistung 7 Nominal Z-voltage Nominale Z-Spannung 10 Ø2 30 Type 12.5 W 10 SW11 , 150 cm2 © Diotec Semiconductor AG http://www.diotec.com/ 1 ZX10 . ZX200 (12.5 W , 5 120 (90 7 59 ZX200 188 212 5 150 ( Diotec
Original
ZX100 Z-Diode ZX30 Zener Diode zx12 ZX15 ZX22 ZX36 ZX13 ZX110 ZX120
Abstract: ZX5.6 . ZX200 (12.5 W) ZX5.6 . ZX200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Version 2006-04-27 Maximum power dissipation Maximale Verlustleistung 7 Nominal Z-voltage Nominale Z-Spannung 10 Ø2 30 Type 12.5 W 10 SW11 , 150 cm2 © Diotec Semiconductor AG http://www.diotec.com/ 1 ZX5.6 . ZX200 (12.5 W , 5 120 (90 7 59 ZX200 188 212 5 150 ( Diotec
Original
ZX7.5 ZX6.8 ZX8.2 ZX62 ZX6.2 ZX18
Abstract: ZX3.9 . ZX200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Version 2004-10-01 7 Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage Nominale Z-Spannung Metal case ­ Metallgehäuse 12.5 W 3.9.200 V DO-4 5.5 g Ø2 30 Type 10 , ZX200 (12.5 W) Maximum ratings Type Typ Zener voltage ) Zener-Spanng.1) IZ = IZtest VZmin [V] VZmax 1 , ZX43 ZX47 ZX51 ZX56 ZX62 ZX68 ZX75 ZX82 ZX91 ZX100 ZX110 ZX120 ZX130 ZX150 ZX160 ZX180 ZX200 3.7 4.0 Diotec
Original
ZX56 ZX16
Abstract: ZX200 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V(Z) Nom.(V) Reference Voltage180 @I(Z) (A) (Test Condition)5m Tolerance (%)6 P(D) Max. (W)12 Z(z) Max. (ê) Dyn. Imped.350 Temp Coef pp/10k11 Maximum Operating Temp (øC)150Ãu Package StyleDO-4 Mounting StyleT American Microsemiconductor American Microsemiconductor
Original
Abstract: 153-171 350 +0.11 5 75 6.3 51 ZX180 168-191 350 +0.11 5 90 5.7 46 ZX200 188-212 350 +0.11 5 90 5.2 42 -
OCR Scan
ITT Semiconductors zx33 itt zx15 itt zx10 itt zx12 zx27 itt zx82
Abstract: 1.0 5000 0.45 3.5 ZX100 100 100 7 1.5 11250 0.30 12~14 2500 (4h) XD3 ZX200 200 1.6 14 3.0 -
OCR Scan
ZX300 ZX400 ZX500 ZX860 ZX70 ZX25 ZX40 W3800V
Abstract: .2 1) ZX9.1 1) ZX110 1) ZX120 1) ZX130 1) ZX150 1) ZX160 1) ZX180 1) ZX200 1) ZX13 1) ZX15 1 , ) ZX120 1) ZX130 1) ZX150 1) ZX160 1) ZX180 1) ZX200 1) Z Z Z Z Z Z Z Z Z Z Z Z Z Z , 1 1N4233/A/B 1N4235/A/B 1N4238/A/B 1N4239/A/B ZX130 ZX150 ZX180 ZX200 1N4245/GP -
Original
BA159 equivalent B80C1500-1000 BYS26-45 equivalent sb5100 B380C2000/1500 1N5048 1A01/G 1A02/G 1A03/G 1A04/G 1A05/G 1A06/G
Abstract: 3.5 ZX100 100 100 7 1.5 11250 0.30 12â'"14 2500 (4h) XD3 ZX200 200 1.6 '"w 14 3.0 45000 0.20 150 -
OCR Scan
KP500 THYRISTOR KP500 KP800 KP300 kp1500 kp 100 thyristor
Abstract: zx2000 . . . . . . . . . . . . . . . . . . . . . . . . HP zx6000 . . . . . . . . . . . . . . . . . . . . ARM
Original
ARM926EJ-S QSH-060-01-F-D-A Zx224 Z123 Diode INTERNAL ARCHITECTURE OF ARM1136 Microprocessor z85 Microprocessor z86 HBI-0131 CT926EJ-S CT1136JF-S HBI-0141 0273F ID042109
Abstract: ZX10 . ZX200 (12.5 W) ZX10 . ZX200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Version 2008-04-09 Maximum power dissipation Maximale Verlustleistung 7 Nominal Z-voltage Nominale Z-Spannung 10 Ø2 30 Type 12.5 W 10 SW11 , 150 cm2 © Diotec Semiconductor AG http://www.diotec.com/ 1 ZX10 . ZX200 (12.5 W , 5 120 (90 7 59 ZX200 188 212 5 150 ( ARM
Original
ARM11 advantage zx6 user manual TNY176 advantage zx6 manual advantage zx6 tny175 HBI-0146 0318F
Abstract: 1.0 5000 0.45 3.5 ZX100 100 100 7 1.5 11250 0.30 12~14 2500 (4h) XD3 ZX200 200 1.6 14 3.0 -
OCR Scan
AA119 FD6666 diode diode BY100 BY164 BA100 diode 1N82 A4/10 A5/62 A5/105 A1000 AA100 AA110
Abstract: 153-171 350 +0.11 5 75 6.3 51 ZX180 168-191 350 +0.11 5 90 5.7 46 ZX200 188-212 350 +0.11 5 90 5.2 42 -
OCR Scan
1N4004 BA102 B2M1-5 BB105 OA210 diode 1N1695 1N644-4006 AA111 AA112 AA113 AA114 AA115 AA116