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VQ1000 Datasheet

Part Manufacturer Description PDF Type
VQ1000 Supertex N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Original
VQ1000 N/A Semiconductor Master Cross Reference Guide Scan
VQ1000CJ N/A Shortform Transistor PDF Datasheet Scan
VQ1000CJ N/A Semiconductor Master Cross Reference Guide Scan
VQ1000CJA N/A Shortform Datasheet & Cross References Data Scan
VQ1000CP Calogic N-Channel Enhancement-Mode MOSFET Transistors Scan
VQ1000CY Calogic N-Channel Enhancement-Mode MOSFET Transistors Scan
VQ1000J Siliconix N-Channel Enhancement-Mode MOSFET Transistors Original
VQ1000J Vishay Telefunken N-Channel 60-V (D-S) MOSFET Original
VQ1000J Calogic N-Channel Enhancement-Mode MOSFET Transistors Scan
VQ1000J N/A Shortform Datasheet & Cross References Data Scan
VQ1000J N/A Semiconductor Master Cross Reference Guide Scan
VQ1000J N/A FET Data Book Scan
VQ1000J Siliconix MOSPOWER Design Data Book 1983 Scan
VQ1000J Vishay Siliconix Shortform Siliconix Datasheet Scan
VQ1000N6 N/A Shortform Datasheet & Cross References Data Scan
VQ1000N6 N/A Semiconductor Master Cross Reference Guide Scan
VQ1000N7 N/A Shortform Datasheet & Cross References Data Scan
VQ1000N9 N/A Semiconductor Master Cross Reference Guide Scan
VQ1000P Vishay Telefunken N-Channel 60-V (D-S) MOSFET Original
Showing first 20 results.

VQ1000

Catalog Datasheet MFG & Type PDF Document Tags

VQ1000

Abstract: vq1000n6 VQ1000 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Inform ation BV dss / b v dgs ^DS(ON) (max) 5.5Q ^D(O N) (min) 0.5A Order Num ber / Package 14-Pin P-DIP VQ1000N6 14-Pin C-DIP* VQ1000N7 60V * 14 pin side brazed ceram ic DIP High Reliability Devices See , p v ie w 1 4 -p in DIP I I + 30V -55°C to +150°C 300°C I 6 I 7 10-46 VQ1000 Therm , Transistor 1.30 96.2 VQ1000N7 2 .0 Unit Watts °C/W 62.5 % % A A ¡as, 2% duty cycle.) 60 50
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OCR Scan

GVVZS3000-21A-2

Abstract: GVVZS3000-21A-4 ] Port plug VVQ0000-58A Individual SUP spacer VVQ1000-P-3-C6 Double check block VQ1000-FPG- , ) VQ1000­FPG­ It is used on the way of the secondary side piping to keep the cylinder in the intermediate , VVQ1000-FPG-02 1 set VQ1000-FPG-C6M5-D 2 pcs. 1.5MPa 0.8MPa 0.1MPa -5 to 50°C 2.7mm2 (147.23) 180CPM , 298 310.5 2 position Double check block VQ1000­FPG­ C4 M5 IN side port size Symbol C4 C6 , . 6 stations manifold VVQ1000-FPG-06 VQ1000-FPG-C4M5-D, 3 sets Double check block
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Original
GVVZS3000-21A-2 GVVZS3000-21A-4 GVVZS3000-21A-3 GVVZS3000-21A-1 AXT100-DS25-030 11n60 VQ0000 VQ2000 VQ141 200/220VAC VVQ1000 VVQ1000-80A-1

VQ1000N6

Abstract: VQ1000 / Package 14-Pin P-DIP VQ1000N6 (max) 5.5£i (min) 0.5A 14-Pin C-DIP* VQ1000N7 High , VQ1000 ^ S u p e rte x in c . N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering , C1G04432 I b O 1046 VQ1000 Thermal Characteristics (@t a = 25 Test Total Power Dissipation , Transistors Each Transistor 1.30 96.2 Unit W atts °C/W VQ1000N7 2 .0 62.5 % % A A 60 50 , ÜT7 10-47 VQ1000 Thermal Coupling and Effective Thermal Resistance In multiple chip devices
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OCR Scan
vq1000N-6 D00143M GGD443

VQ1000

Abstract: VQ1000N6 * 60V 5.5 0.5A VQ1000N6 VQ1000N7 * 14 pin side brazed ceramic DIP Advanced DMOS , VQ1000 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order , * Distance of 1.6 mm from case for 10 seconds. 14-pin DIP 10-46 VQ1000 Thermal Characteristics (@ TA = 25°C) All four Transistors Test Unit Each Transistor VQ1000N7 Total Power , . parameters sample tested. 10-47 10 VQ1000 Thermal Coupling and Effective Thermal Resistance In
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Original
HP215A

VQ1000N7

Abstract: VQ1000N6 * 60V 5.5 0.5A VQ1000N6 VQ1000N7 * 14 pin side brazed ceramic DIP Advanced DMOS , VQ1000 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order , . 9-29 VQ1000 Thermal Characteristics (@ TA = 25°C) Each Transistor Test All four Transistors VQ1000N7 Unit VQ1000N7 Total Power Dissipation Watts 1.30 2.0 Thermal Resistance (Case , pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. 9-30 VQ1000 Thermal Coupling and
Supertex
Original
FAST DMOS FET Switches n-CHANNEL

VQ1000N7

Abstract: A 933 S transistors / b v dqs VQ1000 R qS , section for dim ensions. 9-29 VQ1000 Thermal Characteristics Test Total Power Dissipation , °C) Each Transistor Unit Watts °C/W All four Transistors VQ1000N7 2 .0 VQ1000N7 1.30 96.2 62.5 , VQ1000 Thermal Coupling and Effective Thermal Resistance In multiple chip devices, coupling of heat
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OCR Scan
A 933 S transistors

VQ1000

Abstract: VQ1000 Series N-Channel Enhancement-Mode MOS Transistor Arrays m · m m CQIOOIC C O R P O R A T IO N \J VQ1000 Series FEATURES · Quad switching array · Low rDS(on) , perature. 9-74 caloric CORPORATION VQ1000 Series \J S P EC IFIC A TIO N S 8 SYMBOL STATIC V
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OCR Scan
2N7000 1000J 1000P 1000C
Abstract: WTELEDYNE COMPONENTS VQ1000 N-CHANNEL ENHANCEMENT-MODE QUAD DMOS POWER FET ARRAY FEATURES Inherent Current Sharing Capability when Paralleled Simple Straightforward DC Biasing Extended Safe Operating Area CMOS and TTL Compatible ABSOLUTE MAXIMUM RATINGS (T a = 2 5°C , un le ss oth e rw ise noted.) D rain -S ource V o lta g e . 60V D , ) 14-33 N-CHANNEL ENHANCEMENT-MODE QUAD DMOS POWER FET ARRAY VQ1000 ELECTRICAL CHARACTERISTICS -
OCR Scan
125-C

VQ1000

Abstract: · Switching · Amplification ORDERING INFORMATION Part VQ1000J VQ1000CP VQ1000CY Package Side Braze , VQ1000P/VQ1000CY 60 ±20 0 225 0 14 ±1 13 0.52 2 08 UNITS V A Id m Pd o o Power Dissipation , VQ1000 Series N-Channel Enhancement-Mode MOS Transistor Arrays m * - . m a m CORPORATION , °C unless otherwise noted) LIMITS SYMBOL V ds Vgs Id PARAMETERS/TEST CONDITIONS VQ1000J Draln-Source , caloçflc »RPORATION VQ1000 Series SPECIFICATIONS8 SYMBOL STATIC V(8R)DSS LIMITS PARAMETER TYPb
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OCR Scan
V01000S VQ1000P/VQ1000CY D001D

VQ1000

Abstract: VQ1000P VQ1000 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays B tSSSA PRODUCT SUMMARY PART NUMBER VQ1000J VQ1000P V(BR)DSS 60 60 14-PIN DIP SIDEBRAZE 'T 5.5 5.5 d (A) 0.225 , Storage Temperature Range Lead Temperature (Vie" from case for 10 sec.) SYMBOL VdS VGS b VQ1000J 60 ±3 0 0.225 0.14 VQ1000P 60 ±2 0 0.225 0.14 ±1 1.3 0.52 2 0.8 -55 to 150 300 UNITS V A ·dm , temperature Rev. A (02/11/91) 6-105 SYMBOL RthJA LIMITS 96.2 62.5 UNITS K/W VQ1000 SERIES SPECIFICATIONS
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OCR Scan
VNDS06

VQ1000

Abstract: ic D IP R DS(ON) l|J(ON) Order Number / Package 14-Pin P-DIP VQ1000N6 (max) 5 .5 ÌÌ (min) 0.5A 14-Pin C-DIP* VQ1000N7 High Reliability Devices See pages 5-4 and 5-5 for MILITARY , D jU to p v ie w 14 -pin D IP 10-35 VQ1000 Thermal Characteristics (@t a = 25° c , Q4 or Q2 - Q 3 Unit Watts °C/W Each Transistor 1.30 96.2 VQ1000N7 2.0 62.5 % % A A , e , 2 % d u ty cy c le .) A ll A .C . p a ra m e te rs s a m p le te s te d . 10-36 VQ1000
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OCR Scan

AXT100-DS25-030

Abstract: AXT100-DS25-050 Valves VQ1000, VQ2000 and VQ4000 PNEUMATICS OPTOELECTRONICS Blanking Plate VQ1100N-51 VV5Q11-06N3FU0-D PASSIVE & ACTIVE Cv Rating Series VQ1000 VQ2000 VQ4000 Cv Rating 0.20 0.80 1.90 Base Mounted Plug-In
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Original
AXT661-12 AXT661-14A-10 AXT661-14A-30 AXT100-DS25-015 AXT100-DS25-050 VVQ1000-16A AXT661-1 VQ2100N-51 vq1101-5 VQ100 VV3Q11-06CU1-D VQ110-6F VQ110-5F VQ110-5LO VQ110L-5L

VQ1000

Abstract: TE LE DY NE C O M P O N E N T S 3bE D Ô S 1 7 b G 2 0007fl24 T « T S C WTELEDYNE COMPONENTS VQ1000 N-CHANNEL ENHANCEMENT-MODE QUAD DMOS POWER FET ARRAY FEATURES Inherent Current Sharing Capability when Paralleled Simple Straightforward DC Biasing Extended Safe Operating Area CMOS and , High-Speed Switching Line Drivers Stepper Motor Drivers ORDERING INFORMATION Part No, VQ1000J Package 14 , QUAD DMOS POWER FET ARRAY VQ1000 ELECTRICAL CHARACTERISTICS: Symbol Static BVpss VGS(th) Igbs
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OCR Scan

TN0604N3

Abstract: HV5808 VP2210 N2 VP2206N2 - obs VP2210 N3 VP2206N3 - obs VQ1000 N6 VN3205N6 - obs VQ1000 N7 - VN3205N6 obs VQ1001 P - FOUR: TN0604ND
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Original
VP0109N3 TN0604N3 HV5808 TP0606N3 HV5708 HV50530 VQ1001 replacement 2N6659 VN2210N2 TN0104N3 2N7007 TN5325N3 AN0332

BS170V

Abstract: ST211 M * V N 10K T* V N 10LM V N 2222LL V N 2222LM VQ1000 60 60 60 60 60 60 60 60 60 60 60 60 60 rDS(on
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OCR Scan
SD203 SD5402CY SD402 BS170 SD203CY ST211 BS170V sot89 bv SD5000N SD5001N SD5002N SD5200N SD5501N SD200

VQ1000

Abstract: 2N7000 Transistor Arrays \J VQ1000 Sériés FEATURES â'¢ Quad switching array â'¢ Low rDS(on) , 25°C unless otherwise noted) SYMBOL PARAMETERS/TEST CONDITIONS LIMITS UNITS VQ1000J VQ1000P/VQ1000CY Vds Drain-Source Voltage 60 60 V Vgs Gate-Source Voltage ±30 ±20 Id Continuous Drain
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OCR Scan
quad transistor VQ1000S

mosfet cross reference

Abstract: pj 929 diode VQ1000J VQ1000P VQ1001J VQ1004J TP0620N3 VQ1000N6 VQ1000N7 TN0606N6 VQ1004J SD1202CHP , VQ1000 4N 60 5.5 · VN2222 4N 220 1.25 TD9944 2N 240 6.0 SOW , VQ1000N6 TN0620N3 TN0520N3 TN0520ND TN0520N2 TN0110ND TN0201L TN0401L TN0601L TN1206L
Supertex
Original
mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode T0-92 TN2101 TN2501 TN0602 TN0702 TN0102

FRL-644

Abstract: 572.741.022.0 1/07000 Sériés |A/jjr N-Channel Enhancement-Mode vQ IOOI v _ _ _ _ _ . CORPORATION ^^ /W0S Transistor Arrays \J VQ1000 Sériés FEATURES â'¢ Quad switching array â'¢ Low rDS(on)
RS Components
Original
FRL-644 572.741.022.0 CDQ2B63-50D Rexroth 7860 CT032U0025AE AA-0058G C/10DE0010 C/10DE0015 C/10DE0025 C/10DE0050 C/10DE0080 C/10DE0100
Showing first 20 results.