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VPS05163

Catalog Datasheet MFG & Type PDF Document Tags

VPS05163

Abstract: BAT70-05 BAT70-05 Silicon Schottky Diode 4 Parallel connection for maximum I F per package Low forward voltage drop For power supply For clamping and protection 3 2 1 VPS05163 2, 4 1 3 EHA00005 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT70-05 Marking BAT70-05 Pin Configuration Package 1=A1 | 2=C1/2 | 3=A2 | 4=C1/2 SOT223 Maximum Ratings Parameter Symbol Diode reverse voltage VR TS
Infineon Technologies
Original
50/60H

VPS05163

Abstract: Q62702-A1223 BAT 70-05 Silicon Schottky Diodes · Parallel connection for maximum IF per package 4 · Low forward voltage drop · For power supply 3 · For clamping and protection 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BAT 70-05 BAT 70-05 Q62702-A1223 1 = A1 2 n.c. Package 3 = A2 4=C1/C2 SOT-223 Maximum Ratings Parameter Symbol Reverse voltage, TS < 75°C 1) VR 50 Reverse voltage, TS
Siemens
Original
Abstract: SIEMENS BAT 70-05 Silicon Schottky Diodes â'¢ Parallel connection for maximum /F \ 4 per package i â'¢ Low forward voltage drop CO â'¢ For power supply â'¢ For clamping and protection 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BAT 70-05 BAT 70-05 Q62702-A1223 1 = A1 2 n.c. Package 3 = A2 4=C1/C2 SOT-223 Maximum Raltmgs-Parameter -
OCR Scan

VPS05163

Abstract: bat66 BAT66-05 Silicon Schottky Diode Low-power Schottky rectifier diode For low-loss, fast-recovery rectification, 4 meter protection, bias isolation and clamping purpose 3 2 1 VPS05163 2, 4 1 3 EHA00005 Type Marking BAT66-05 BAT 66-05 Pin Configuration 1 = A1 2=C1/C2 3 = A2 Package 4=C1/C2 SOT223 Maximum Ratings Parameter Symbol Diode reverse voltage VR 40 V Forward current IF 2 A Average forward current (50/60Hz, sinus
Infineon Technologies
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bat66 EHB00062 EHB00063

c3 SOT-223

Abstract: 7005 BAT 70-05 Silicon Schottky Diodes · Parallel connection for maximum I F per package 4 · Low forward voltage drop · For power supply 3 · For clamping and protection 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT 70-05 BAT 70-05 Pin Configuration 1=A1 2=C1/C3 3=A2 Package 4=C1/C3 SOT-223 Maximum Ratings Parameter Symbol Reverse voltage, TS < 75°C 1) VR 50 Reverse voltage, TS < 50°C 1
Infineon Technologies
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c3 SOT-223 7005 p10ms

Q62702-Z2037

Abstract: VPS05163 PZTA 92 PNP Silicon High Voltage Transistor · High breakdown voltage 4 · Low collector-emitter saturation voltage · Complementary type: PZTA 42 (NPN) 3 2 1 Type Marking Ordering Code Pin Configuration PZTA 92 PZTA 92 Q62702-Z2037 1=B 2=C VPS05163 Package 3=E 4=C SOT-223 Value Unit Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 5 DC
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Original
100MH

tr 30 f 124

Abstract: diode 78a BAS78A.BAS78D Silicon Switching Diodes Switching applications High breakdown voltage 4 3 2 1 VPS05163 2, 4 1 EHA00004 Type Marking Pin Configuration Package BAS78A BAS 78A 1=A 2=C 3 = n.c. 4 = C SOT223 BAS78B BAS 78B 1=A 2=C 3 = n.c. 4 = C SOT223 BAS78C BAS 78C 1=A 2=C 3 = n.c. 4 = C SOT223 BAS78D BAS 78D 1=A 2=C 3 = n.c. 4 = C SOT223 Maximum Ratings Symbol Parameter BAS
Infineon Technologies
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tr 30 f 124 diode 78a DIODE marking 78A EHN00020 EHB00047 EHB00048

VPS05163

Abstract: 6605 BAT 66-05 Silicon Schottky Diode · Low-power Schottky rectifier diode · For low-loss, fast-recovery rectification, 4 meter protection, bias isolation and clamping purpose 3 2 1 VPS05163 2, 4 1 3 EHA00005 Type Marking BAT 66-05 BAT 66-05 Pin Configuration 1 = A1 2=C1/C2 3 = A2 Package 4=C1/C2 SOT-223 Maximum Ratings Parameter Symbol Diode reverse voltage VR 40 V Forward current IF 2 A Average forward current (50/60Hz
Infineon Technologies
Original
6605 Schottky Diode SOT-223 EHB00155

Q62702-Z2035

Abstract: VPS05163 PZTA 42 NPN Silicon High Voltage Transistor · High breakdown voltage 4 · Low collector-emitter saturation voltage · Complementary type: PZTA 92 (PNP) 3 2 1 Type Marking Ordering Code Pin Configuration PZTA 42 PZTA 42 Q62702-Z2035 1=B 2=C 3=E VPS05163 Package 4=C SOT-223 Value Unit Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 6 DC
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Original

Marking 2c1

Abstract: BAS79A BAS79A.BAS79D Silicon Switching Diodes Switching applications High breakdown voltage Common cathode 4 3 2 1 2, 4 1 VPS05163 3 EHA00005 Type Marking Pin Configuration BAS79A BAS 79A 1 = A1 2=C1/2 3 = A2 BAS79B BAS 79B 1 = A1 2=C1/2 3 = A2 BAS79C BAS 79C 1 = A1 2=C1/2 3 = A2 BAS79D BAS 79D 1 = A1 2=C1/2 3 = A2 Package 4=C1/2 SOT223 4=C1/2 SOT223 4=C1/2 SOT223 4=C1/2 SOT223 Maximum Ratings
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Marking 2c1 EHN00021 EHB00050 EHB00051
Abstract: PZTA13, PZTA14 NPN Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: PZTA63, PZTA64 (PNP) 4 3 2 1 VPS05163 Type PZTA13 PZTA14 Maximum Ratings Parameter Marking PZTA 13 PZTA 14 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT223 SOT223 Symbol VCES VCBO VEBO Values 30 30 10 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Infineon Technologies
Original
EHP00717 EHP00718 EHP00719 EHP00720 EHP00721 EHP00311

MARKING 93

Abstract: 3CTA PZTA 92 PNP Silicon High Voltage Transistor High breakdown voltage 4 Low collector-emitter saturation voltage Complementary type: PZTA 42 (NPN) 3 2 1 Type Marking PZTA 92 PZTA 92 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT-223 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 5 DC collector current IC 500 Base current IB
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MARKING 93 3CTA EHP00733 EHP00734 EHP00346 EHP00735 EHP00736 EHP00737

diode 78a

Abstract: 78ad BAS 78A . BAS 78D Silicon Switching Diodes · Switching applications 4 · High breakdown voltage 3 2 1 VPS05163 2, 4 1 EHA00004 Type Marking Pin Configuration Package BAS 78A BAS 78A 1=A 2=C 3 = n.c. 4 = C SOT-223 BAS 78B BAS 78B 1=A 2=C 3 = n.c. 4 = C SOT-223 BAS 78C BAS 78C 1=A 2=C 3 = n.c. 4 = C SOT-223 BAS 78D BAS 78D 1=A 2=C 3 = n.c. 4 = C SOT-223 Maximum Ratings Symbol BAS BAS BAS
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78ad BAS 16 MARKING SOT 78B marking 78ad EHB00046

PZTA42

Abstract: PZTA92 PZTA92 PNP Silicon High Voltage Transistor High breakdown voltage 4 Low collector-emitter saturation voltage Complementary type: PZTA42 (NPN) 3 2 1 Type Marking PZTA92 PZTA 92 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 5 DC collector current IC 500 Base current IB 100 Total
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Original

PZTA42

Abstract: PZTA92 PZTA42 NPN Silicon High Voltage Transistor High breakdown voltage Low collector-emitter saturation voltage Complementary type: PZTA92 (PNP) 4 3 2 1 Type Marking PZTA42 PZTA 42 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings Value Unit Parameter Symbol Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 6 DC collector current IC 500
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EHP00723 EHP00320 EHP00724 EHP00725 EHP00726
Abstract: PZTA92 PNP Silicon High Voltage Transistor High breakdown voltage Low collector-emitter saturation voltage Complementary type: PZTA42 (NPN) 4 3 2 1 VPS05163 Type PZTA92 Maximum Ratings Parameter Marking PZTA 92 1=B Pin Configuration 2=C 3=E 4=C Package SOT223 Symbol VCEO VCBO VEBO IC IB Ptot Tj Tstg Value 300 300 5 500 100 1.5 150 -65 . 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Base current Total power Infineon Technologies
Original

79a diode

Abstract: diode 79A BAS 79A . BAS 79D Silicon Switching Diodes · Switching applications 4 · High breakdown voltage · Common cathode 3 2 1 2, 4 1 VPS05163 3 EHA00005 Type Marking Pin Configuration Package BAS 79A BAS 79A 1 = A1 2=C1/2 3 = A2 4=C1/2 SOT-223 BAS 79B BAS 79B 1 = A1 2=C1/2 3 = A2 4=C1/2 SOT-223 BAS 79C BAS 79C 1 = A1 2=C1/2 3 = A2 4=C1/2 SOT-223 BAS 79D BAS 79D 1 = A1 2=C1/2 3 = A2 4=C1/2 SOT-223 Maximum Ratings
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79a diode diode 79A W301 EHB00049

VPS05163

Abstract: BCP 28, BCP 48 PNP Silicon Darlington Transistors · For general AF applications 4 · High collector current · High current gain · Complementary types: BCP 29/49 (NPN) 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00008 Type Marking Pin Configuration Package BCP 28 BCP 28 1=B 2=C 3=E 4=C SOT-223 BCP 48 BCP 48 1=B 2=C 3=E 4=C SOT-223 Maximum Ratings Parameter Symbol BCP 28 BCP 48 Collector-emitter voltage Unit VCEO 30 60
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EHP00243 EHP00244 EHP00246 EHP00247 EHP00248 EHP00249

Q67040-S4326

Abstract: SPN01N50M2 SPN01N50M2 Target data sheet D,2/4 Cool MOSTM Small-Signal-Transistor 4 · New revolutionary high voltage technology · Ultra low gate charge · Extreme dv/dt rated 3 G,1 · Optimized capacitances 2 S,3 1 · Improved noise immunity VPS05163 C OLMOS O · Former development designation: Power Semiconductors SPUx7N60S5/SPDx7N60S5 Type V DS ID RDS(on) SPN01N50M2 500 V 0.33 A 6 Package SOT-223 Marking Ordering Code 01N50M2 Q67040-S4326 Maximum Ratings, at T j
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SPn01N50 GPS05560 7N60S5/SPD 7N60S5

VPS05163

Abstract: BDP 948, BDP 950 PNP Silicon AF Power Transistors For AF driver and output stages 4 High collector current High current gain Low collector-emitter saturation voltage 3 Complementary types: BDP 947, BDP 949 (NPN) 2 1 Pin Configuration VPS05163 Type Marking Package BDP 948 BDP 948 1=B 2=C 3=E 4=C SOT-223 BDP 950 BDP 950 1=B 2=C 3=E 4=C SOT-223 Maximum Ratings Parameter Symbol BDP 948 BDP 950
Infineon Technologies
Original
Abstract: BDP 948, BDP 950 PNP Silicon AF Power Transistors â'¢ For AF driver and output stages 4 â'¢ High collector current â'¢ High current gain â'¢ Low collector-emitter saturation voltage 3 â'¢ Complementary types: BDP 947, BDP 949 (NPN) 2 1 Pin Configuration VPS05163 Type Marking Package BDP 948 BDP 948 1=B 2=C 3=E 4=C SOT-223 BDP 950 BDP 950 1=B 2=C 3=E 4=C SOT-223 Maximum Ratings Parameter Symbol BDP 948 BDP 950 Infineon Technologies
Original

947 transistor

Abstract: BDP 947, BDP 949 Silicon NPN Transistor â'¢ For AF driver and output stages 4 â'¢ High collector current â'¢ High current gain â'¢ Low collector-emitter saturation voltage 3 â'¢ Complementary types: BDP 948, BDP 950 (PNP) 2 1 Pin Configuration VPS05163 Type Marking Package BDP 947 BDP 947 1=B 2=C 3=E 4=C SOT-223 BDP 949 BDP 949 1=B 2=C 3=E 4=C SOT-223 Maximum Ratings Parameter Symbol BDP 947 BDP 949
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947 transistor

EHA00009

Abstract: BCP29 BCP29, BCP49 NPN Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: BCP28/48 (PNP) 4 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP29 BCP 29 1=B 2=C 3=E 4=C SOT223 BCP49 BCP 49 1=B 2=C 3=E 4=C SOT223 Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BCP29 BCP49 VCEO 30
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EHP00252 EHP00253 EHP00255 EHP00256 EHP00257 EHP00258

VPS05163

Abstract: BCP 68 NPN Silicon AF Transistor · For general AF applications 4 · High collector current · High current gain · Low collector-emitter saturation voltage 3 · Complementary type: BCP 69 (PNP) 2 1 Pin Configuration VPS05163 Type Marking Package BCP 68 BCP 68 1=B 2=C 3=E 4=C SOT-223 BCP 68-10 BCP 68-10 1 = B 2=C 3=E 4=C SOT-223 BCP 68-16 BCP 68-16 1 = B 2=C 3=E 4=C SOT-223 BCP 68-25 BCP 68-25 1 = B 2=C 3
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EHP00274 EHP00275 EHP00276 EHP00277 EHP00278 EHP00279

BCP51

Abstract: BCP53 B 2=C 3=E 4=C SOT223 BCP56-16 BCP 56-16 1 = B 2=C 3=E 4=C VPS05163
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BCP54 BCP56 BCP51 BCP53 BCP54-10 BCP54-16 BCP55-10

81VG

Abstract: BFG19S NPN Silicon RF Transistor For low noise, low distortion broadband 4 amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFG19S Maximum Ratings Parameter Marking BFG19S 1=E Pin Configuration 2=B 3=E 4=C Package SOT223 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 15 20 20 3 100 12 1 150 -65 . 150 -65 . 150
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81VG

marking BFG

Abstract: BFG193 BFG 193 NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2 GHz 4 For linear broadband amplifiers fT = 8 GHz F = 1.3 dB at 900 MHz 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFG 193 BFG193 Pin Configuration 1=E 2=B 3=E Package 4=C SOT-223 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20
Infineon Technologies
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marking BFG 900MH
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