500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
VN2224N3-G Microchip Technology Inc 540mA, 240V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 visit Digikey Buy

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : VN2224N3-G Supplier : Microchip Technology Manufacturer : Avnet Stock : - Best Price : $1.3833 Price Each : $1.5483
Part : VN2224N3-G Supplier : Microchip Technology Manufacturer : Newark element14 Stock : - Best Price : $2.00 Price Each : $2.88
Part : VN2224N3-G Supplier : Microchip Technology Manufacturer : Future Electronics Stock : - Best Price : $1.39 Price Each : $1.39
Part : VN2224N3-G Supplier : Microchip Technology Manufacturer : microchipDIRECT Stock : - Best Price : $2.88 Price Each : $2.88
Part : VN2224N3-G Supplier : Microchip Technology Manufacturer : Master Electronics Stock : 1,015 Best Price : $1.40 Price Each : $2.01
Shipping cost not included. Currency conversions are estimated. 

VN2224N3 Datasheet

Part Manufacturer Description PDF Type
VN2224N3 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original
VN2224N3 Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original

VN2224N3

Catalog Datasheet MFG & Type PDF Document Tags

555 timer for boost converter

Abstract: capacitor 10nf 50v 0805 LX 330µH 1 HVIN D BAS21 QSW VN2224N3 U2 HV809LG ZFB 150V RFB 120K CDD 0.1µF , VN2224N3 Inductor 330µH Surface Mount J.W. Miller PM105-331K SW Slide switch SPDT
Supertex
Original
HV809 1N5276B LM555CM 555 timer for boost converter capacitor 10nf 50v 0805 u1 555 zener diode 0805 datasheet U1 LM 555 HV809DB2 AN-H36 DO-35 EG1271A
Abstract: VN2224N3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)240 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)0.9 @Temp (øC)150 IDM Max (@25øC Amb)5.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case125 Thermal Resistance Junc-Amb.170 V(GS)th Max. (V)3.0 V(GS)th (V) (Min)1.0 @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition)5.0m I(DSS) Max. (A American Microsemiconductor
Original

APPLICATION NOTES LM7812

Abstract: Transistor LM7812 Equivalent , the VN2224N3. This Supertex MOSFET is a 240 volt, 1.25 ohm device designed to work in DC-DC converter applications like the HV9112DB3. The VN2224N3 is available in the cost-effective TO-92 package , in the VN2224N3 low. The power dissipated in the switch comes from two primary sources: The , VN2224N3 Supertex 16 2 Q2, Q3 500mW, 140V, NPN bi-polar transistor FMMT494 Zetex 17 , 220k OSCIN DISCH VREF SHTDN* Q1 VN2224N3 2 ·3 TN1 T8434 · 19T, 90T, 12T
Supertex
Original
HV9112 APPLICATION NOTES LM7812 Transistor LM7812 Equivalent 330uf, 35v electrolytic capacitor LM7812 TO-92 lm7812 regulator ic 102K 400V CAPACITOR 20REN 70VDC HV9112NG AN-H13

VN2224N3

Abstract: BAV21 CIN CS 250V - VN2224N3 or TN2425N8 09/05/02 Supertex Inc. does not recommend the use of , Gate 6 4 GND Lx CS 5 BAV21 HV829ASG + VIN 4.7µF VN2224N3 4.2µF 250V -
Supertex
Original
HV829A HV829B HV829BSG HV829A/B 1000H HV829A/BSG

ICM7555

Abstract: IRF520 VN2224N3 will require 2.4V to achieve this value. In case a 2.4V drive is not available, as in many applications, a VN2224N3 will be incapable of functioning in the circuit. In spite of the TN2524N3 die being , than a higher threshold device. 150 TN2524N8 100 50 VN2224N3 0 0 0.5 1.0 1.5 2.0
Supertex
Original
TN0604N3 ICM7555 IRF520 VN2210N3 VN2224 AN-D02 12VDC

charge pump relay drive circuit

Abstract: IRF P CHANNEL MOSFET VN2224N3 will require 2.4 volts to achieve this value. In case a 2.4 volts drive is not available, as in many applications, a VN2224N3 will be incapable of functioning in the circuit. In spite of the , , where limited gate drive charging current is available. VN2224N3 0 0 0.5 1.0 1.5 2.0
Supertex
Original
charge pump relay drive circuit IRF P CHANNEL MOSFET pioneer mosfet IRF-520 Mosfet

IRF-520 Mosfet

Abstract: VN2224 to-220 is 100mA, TN2524N8 will typically need V GS = 1.75V and VN2224N3 will require 2.4 volts to achieve this value. In case a 2.4 volts drive is not available, as in many applications, a VN2224N3 will be , . VN2224N3 0 0 0.5 1.0 1.5 2.0 2.5 3.0 2. Large die must be accommodated in large
Supertex
Original
VN2224 to-220 definition of photovoltaic effect IRF P CHANNEL MOSFET TO-220 TN2124K1

TN0604N3

Abstract: HV5808 obs VN2220 N2 - VN2224N3 VN2220 N3 VN2224N3 - VN2224 N2 - VN2224N3 obs VN2406 B - TN2524N8 or VN2406L obs VN2406 D - TN2524N8 or
-
Original
VP2206N2 VP0109N3 VP2210 VQ1000 VN3205N6 HV5808 TP0606N3 HV5708 HV50530 2N6659 VN2210N2 TN0104N3 2N7007 TN5325N3 AN0332

DN2540N5

Abstract: HT0440LG VN2106N3-G VN2110K1-G VN2210N3-G VN2222LL-G VN2224N3-G VN2406L-G VN2410L-G VN2450N3-G VN2450N8-G , VN0808L VN10KN3 VN1206L VN2106N3 VN2110K1 VN2210N3 VN2222LL VN2224N3 VN2406L VN2410L VN2450N3
-
Original
DN2540N5 HT0440LG DN2530N3-G DN3135K1-G HT0440LG-G TP0610T hv5308pj-b LR8N3-G TN2130K1-G TN2510N8 2N7000 2N7002 2N7008 DN2470K4 DN2530N3 DN2530N8

lm 555 timer

Abstract: 555 timer for boost converter VN2224N3 PM105-331K EG1271A LM555CM HV809LG Supertex
Supertex
Original
lm 555 timer 555 timer ic CI LM 555 DATA SHEET OF LM555CM 555 for dc dc boost converter HV809D A102904

VN2222

Abstract: VN2222NC VN2222 VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS(ON) (max) 220V 1.25 240V 1.25 Order Number / Package ID(ON) (min) TO-92 20-Pin C-Dip 5.0A ­ VN2222NC 5.0A VN2224N3 ­ 7 Advanced DMOS Technology High Reliability Devices These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices
Supertex
Original
VN2222/VN2224

VN2220

Abstract: VN2220 VN2222 VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^D S(O N ) I d (ON) Order Number / Package TO-39 VN2220N2 - BVdgs 200V 220V 240V T M IL v is u a l s c re e n in g a v a ila b le (max) 1.25Q 1.25Q 1.25Q (min) 5.0A 5.0A 5.0A TO-92 VN2220N3 - 20-Pin C-Dip VN2222NC - Dicet VN2220ND - VN2224N2 VN2224N3 VN2224ND High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information
-
OCR Scan
VN2220/VN2222/VN2224
Abstract: VN2222 VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 220V 240V RDS(ON) (max) 1.25 1.25 ID(ON) (min) 5.0A 5.0A Order Number / Package TO-92 - VN2224N3 20-Pin C-Dip VN2222NC - High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process Supertex
Original

voltage to frequency converter using ic 555 timer

Abstract: a to d converter using ic 555 timer >3.3mA 200mA Reverse recovery time 160V 240V Peak , NC CNTRL GND Figure 10: Example Circuit QSW VN2224N3 C HV 1µF * 330µH J.W. Miller
Supertex
Original
voltage to frequency converter using ic 555 timer a to d converter using ic 555 timer PWM USING IC 555 TIMER voltage to frequency converter using ic 555 resistance to frequency converter using ic 555 design of PROCESS CONTROL TIMER using 555 ic HV809K2

VN2220

Abstract: VN2220N3 inc . Order Number / Package TO-39 TO-92 VN2220N3 VN2224N3 Dicet VN2220ND VN2224ND VN22C N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVoss/ BV ogs ^DS(O N) ' (ON) (max) 1.25ft 1.25Q (min) 5.0A 5.0A 200V 240V 1 ' MIL visual screening available VN2220N2 VN2224N2 High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Advanced DMOS Technology These enhancement-mode
-
OCR Scan

VN2222

Abstract: VN2224 VN2222 VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS ID(ON) (min) TO-92 20-Pin C-Dip Die 220V 1.25 5.0A ­ VN2222NC ­ 240V RDS(ON) (max) 1.25 5.0A VN2224N3 ­ VN2224ND MIL visual screening available Advanced DMOS Technology High Reliability Devices These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate
Supertex
Original
Abstract: VN2222 VN2224 Supertex:inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package b v dss/ ^DS(ON) ^D(ON) b v dgs (max) (min) TO-92 20-Pin C-Dip 220V 1.25Ã2 5.0A - VN2222NC 240V 1.25Ã2 5.0A VN2224N3 - Advanced DMOS Technology High Reliability Devices These enhancem ent-m ode (normally-off) transistors utilize a vertical DMOS structure and Supertexâ'™s well-proven silicon-gate manufacturing process. This -
OCR Scan

LSD 431 TO-92

Abstract: A VN2220 VN2222 VN2224 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ Order Number / Package R d S(ON) I d (ON) (max) (min) TO-39 TO-92 20-Pin C-Dip D ice1 200V 1.25Q 5.0A VN2220N2 VN2220N3 - VN2220ND 220V 1.25Ã2 5.0A - - VN2222NC - 240V 1.25Q 5.0A VNI2224N2 VN2224N3 - VN2224ND b v dgs T MIL visual screening available These enhancement-mode (normally-off
-
OCR Scan
LSD 431 TO-92

VN2220

Abstract: VN2222 VN2220 VN2222 VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS ID(ON) (min) TO-39 TO-92 20-Pin C-Dip Dice 200V 1.25 5.0A VN2220N2 VN2220N3 ­ VN2220ND 220V 1.25 5.0A ­ ­ VN2222NC ­ 240V RDS(ON) (max) 1.25 5.0A VN2224N2 VN2224N3 ­ VN2224ND MIL visual screening available 8 Advanced DMOS Technology High Reliability Devices These enhancement-mode
-
Original
220V DC circuits motor control 220V reversing motor control dc motor control circuit 220v dc voltage drop circuit from 220V to 10V TO39 package

2N7008

Abstract: VN2222 VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 220V 240V RDS(ON) (max) 1.25 1.25 ID(ON) (min) 5.0A 5.0A Order Number / Package TO-92 ­ VN2224N3 20-Pin C-Dip VN2222NC ­ 7 High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process
Supertex
Original
CH06C VN0300 VN0104 VN3205 VN0106 VN2106

pwm 555 timer mosfet driver

Abstract: 555 TIMER IC power level of 660mW. Required >160V >420mA >147mA >153mW VN2224N3 240V 7.0A 900mA 1.25 , OUT CNTRL GND QSW NC VN2224N3 The circuit was built and tested with the following
Supertex
Original
pwm 555 timer mosfet driver PHV 10W 200 watt ,50 KHz Full bridge converter 23KHZ ic lm 555 timer voltage to frequency converter using ic 555 and i
Showing first 20 results.