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VF-0 Datasheet

Part Manufacturer Description PDF Type
VF05M10101KD5 AVX Zinc Oxide Varistor Original
VF05M10101KD6 AVX Zinc Oxide Varistor Original
VF05M10101KD7 AVX Zinc Oxide Varistor Original
VF05M10101KD8 AVX Zinc Oxide Varistor Original
VF05M10101KDA AVX Zinc Oxide Varistor Original
VF05M10101KDB AVX Zinc Oxide Varistor Original
VF05M10101KDC AVX Zinc Oxide Varistor Original
VF05M10101KDD AVX Zinc Oxide Varistor Original
VF05M10101KDR AVX Zinc Oxide Varistor Original
VF05M10101KDT AVX Zinc Oxide Varistor Original
VF05M10101KHB AVX Zinc Oxide Varistor Original
VF05M10121KD5 AVX Zinc Oxide Varistor Original
VF05M10121KD6 AVX Zinc Oxide Varistor Original
VF05M10121KD7 AVX Zinc Oxide Varistor Original
VF05M10121KD8 AVX Zinc Oxide Varistor Original
VF05M10121KDA AVX Zinc Oxide Varistor Original
VF05M10121KDB AVX Zinc Oxide Varistor Original
VF05M10121KDC AVX Zinc Oxide Varistor Original
VF05M10121KDD AVX Zinc Oxide Varistor Original
VF05M10121KDQ AVX Zinc Oxide Varistor Original
Showing first 20 results.

VF-0

Catalog Datasheet MFG & Type PDF Document Tags

09d2004

Abstract: 09-D2 Key Parameters VRRM = 2600 IFAVM = 1020 IFSM = 11.5 VF0 = 0.87 rF = 0.39 Avalanche Rectifier Diode V A kA V m 5SDA 09D2604 Doc. No. 5SYA 1121 - 01 Apr-98 Features · · · · , It 3 Limiting load integral Half sine wave, TC = 85°C 66010 A s VF0 Threshold , calculated as follows: IFAVM = where P= -VF0 + 2 (VF0)2 + 4 * f * rf * P 2 * f 2 * rf , ) 10-1 t [s] 2 3 4 5 56 VF0 (V) Ta (°C) 100 2 3 4 5 67 101 rF () for DC
ABB Automation
Original
09D2304 09d2004 09-D2 09D2004 CH-5600
Abstract: Key Parameters VRRM = 200 IFAVM = 7110 IFSM = 55.0 VF0 = 0.74 rF = 0.026 V A kA V m Rectifier , Semiconductors AG 5SDD 71B0200 On-state IFAVM IFRMS IFSM It VF0 rF VF min VF max 2 Max. average , ambient temperature Ta the maximum on-state current can be calculated as follows: IFAVM = -VF0 + (VF0)2 + 4 * f * rf * P 2 * f 2 * rf or 2 IFAVM (A) T max (°C) Rthja (K/kW) f = 2 P (W) Tc (°C) RthJC (K/kW) for DC current for half-sine wave for 120°el., sine for 60° el., sine VF0 (V) Ta ABB Semiconductors
Original

CH520G2

Abstract: CH520G2-30PT / 1SS388G2PT FBPD-923 Schottky 100mA 40V VF0.6V CH621G2-40PT FBPD-923 Schottky 100mA 40V VF0.6V CH501G2-40PT FBPD-923 Schottky 100mA 45V VF0.55V CH521G2-30PT FBPD-923 Schottky 200mA 30V VF0.50V CH520G2-30PT FBPD-923 Schottky 200mA 30V VF0.6V CH751G2-40PT FBPD-923 Schottky 30mA 40V VF0.37V CH740G2-40PT FBPD-923 Schottky 40mA 40V VF1.0V CH551G2-30PT FBPD , -723 Schottky 30mA 40V VF0.37V CH461M1PT FBPT-723 Schottky 700mA 25V VF0.49V BAS70M1PT FBPT
-
Original
FBPT-523 CH520G2 transistor digital 47k 22k PNP NPN transistor R2-47K npn switching transistor 60v A1100 QFN200 BPT-523 CHDTA123TT1PT CHDTA123YT1PT

5SDA11D1702

Abstract: Key Parameters VRRM = 1700 IFAVM = 1310 IFSM = 15.0 VF0 = 0.74 rF = 0.25 Avalanche Rectifier Diode V A kA V m 5SDA 11D1702 Doc. No. 5SYA 1119 - 01 Apr-98 Features · · · · , Limiting load integral Half sine wave, TC = 85°C 113010 A s 107010 A s VF0 Threshold voltage , calculated as follows: IFAVM = where P= -VF0 + 2 (VF0)2 + 4 * f * rf * P 2 * f 2 * rf , 1 2.5 3.1 6 P (W) Tc (°C) RthJC (K/kW) VF0 (V) Ta (°C) rF () for DC current for
ABB Automation
Original
5SDA11D1702 11D1402 11D1102
Abstract: Key Parameters VRRM = 5000 IFAVM = 1410 IFSM = 17.5 VF0 = 1.13 rF = 0.44 Avalanche , °C 1530103 A s Limiting load integral 3 150010 A s VF0 Threshold voltage 1.13 V rF , ambient temperature Ta the maximum on-state current can be calculated as follows: IFAVM = -VF0 + 2 (VF0)2 + 4 * f * rf * P 2 * f 2 * rf IFAVM (A) T max (°C) Rthja (K/kW) 2 where TJ , (K/kW) VF0 (V) Ta (°C) rF () for DC current for half-sine wave for 120°el., sine for 60 ABB Automation
Original
14F5007 14F4407 14F3807

21F2904

Abstract: 3310 DIODE DATASHEET Key Parameters VRRM = 3200 IFAVM = 2110 IFSM = 26.0 VF0 = 0.89 rF = 0.17 Avalanche Rectifier Diode V A kA V m 5SDA 21F3204 Doc. No. 5SYA 1130 - 01 Apr-98 Features · · · · , 85°C 4205103 A s Limiting load integral 3 327010 A s VF0 Threshold voltage 0.89 V , where -VF0 + 2 (VF0)2 + 4 * f * rf * P 2 * f 2 * rf TJ max - TC P= Rthjc or TJ max , ) RthJC (K/kW) VF0 (V) Ta (°C) rF () for DC current for half-sine wave for 120°el., sine for
ABB Automation
Original
21F2904 3310 DIODE DATASHEET 21F2604
Abstract: Key Parameters VRRM = 200 IFAVM = 6130 IFSM = 45 VF0 = 0.80 rF = 0.030 Features V A kA V m Rectifier Diode 5SDD 40B0200 Doc. No. 5SYA 1154-01 Feb-99 · Optimized for high current rectifiers · , Semiconductors AG 5SDD 40B0200 On-state IFAVM IFRMS IFSM It VF0 rF VF min VF max 2 Max. average , -VF0 + (VF0)2 + 4 * f * rf * P 2 * f 2 * rf 2 IFAVM (A) T max (°C) Rthja (K/kW) f = 2 P (W) Tc (°C) RthJC (K/kW) for DC current for half-sine wave for 120°el., sine for 60° el., sine VF0 (V ABB Semiconductors
Original
Abstract: Key Parameters VRRM = 3800 IFAVM = 1620 IFSM = 20.5 VF0 = 1.03 rF = 0.32 Avalanche Rectifier Diode V A kA V m 5SDA 16F3806 Doc. No. 5SYA 1128 - 01 Apr-98 Features · · · · , load integral 3 207010 A s VF0 Threshold voltage 1.03 V rF Slope resistance 0.32 , the maximum on-state current can be calculated as follows: IFAVM = where -VF0 + 2 (VF0 , (A) T max (°C) Rthja (K/kW) 2 f = 1 2.5 3.1 6 P (W) Tc (°C) RthJC (K/kW) VF0 (V ABB Automation
Original
16F3206

5SDA24F2303

Abstract: 24F1703 Key Parameters VRRM = 2300 IFAVM = 2350 IFSM = 29.0 VF0 = 0.84 rF = 0.13 Avalanche Rectifier Diode V A kA V m 5SDA 24F2303 Doc. No. 5SYA 1131 - 01 Apr-98 Features · · · · , 85°C 4205103 A s Limiting load integral 3 387510 A s VF0 Threshold voltage 0.84 V , -VF0 + 2 (VF0)2 + 4 * f * rf * P 2 * f 2 * rf IFAVM (A) T max (°C) Rthja (K/kW) 2 where , ) RthJC (K/kW) VF0 (V) Ta (°C) rF () for DC current for half-sine wave for 120°el., sine for
ABB Automation
Original
24F2003 24F1703 5SDA24F2303

5a6 zener diode

Abstract: 5A6 smd sot23 MBR10H150CT High-Voltage Schottky Rectifier; Dual Common Cathode IF=2x5A, VR=150V, VF=0,72V, low , =20-60V, VF=0,5-0,75V Q-Level SMD DO-214AB (SMC) Zener Diode Product Name Status Description , =30kV SMD SOT23 MBRB735 Schottky Barrier Rectifier IF=7,5A, VR=35-60V, VF=0,57-0,65V TH , High-Current-Density Schottky Rectifier SMD IF=2,0A, VR= 30-40V, VF=0,38-0,42V SMD DO-214AC (SMA) SSC53L NEW High-Current-Density Schottky Rectifier SMD IF=5,0A, VR=30-40V, VF=0,38-0,42V SMD DO
Vishay Intertechnology
Original
5a6 zener diode 5A6 smd sot23 diode zener 6.2v 1w dual mosfet dip 10v ZENER DIODE MMBZ5240B-V IL207AT 4000V SFH615 5300V SFH6916

LINEAR OPTOCOUPLER

Abstract: DAA2000 Junction Capacitance CJ - TBD - pF VF=0 V, f=1.0 MHz Dynamic Resistance VF/IF - 6 - - CJ - 12 - pF VF=0 V, f=1 MHz Frequency Response BW , - 1.0 - pF VF=0 V, f=1 MHz Common Mode Capacitance Ccm - 0.5 - pF VF=0 V, f=1 MHz K1 at IF=2.0 mA, VD=0 V - 0.007 - - - - THD at 0=316
Infineon Technologies
Original
IL388DAA DAA2000 DL207DAA DM207DAA LINEAR OPTOCOUPLER diodes k2 1-888-I

92ka

Abstract: Apr98 Key Parameters VRRM = 3200 IFAVM = 910 IFSM = 9.2 VF0 = 0.93 rF = 0.52 Avalanche , Limiting load integral 3 VF0 Threshold voltage 0.93 V rF Slope resistance 0.52 m VF , ambient temperature Ta the maximum on-state current can be calculated as follows: IFAVM = -VF0 + 2 (VF0)2 + 4 * f * rf * P 2 * f 2 * rf IFAVM (A) T max (°C) Rthja (K/kW) 2 where TJ , (K/kW) VF0 (V) Ta (°C) rF () for DC current for half-sine wave for 120°el., sine for 60
ABB Automation
Original
92ka Apr98 08D3205 08D2905
Abstract: Key Parameters VRRM = 3800 IFAVM = 790 IFSM = 7.6 VF0 = 1.01 rF = 0.72 Avalanche Rectifier Diode V A kA V m 5SDA 07D3806 Doc. No. 5SYA 1123 - 01 Apr-98 Features · · · · , 290103 A s Limiting load integral 3 VF0 Threshold voltage 1.01 V rF Slope resistance , = where -VF0 + 2 (VF0)2 + 4 * f * rf * P 2 * f 2 * rf TJ max - TC P= Rthjc or , ) Tc (°C) RthJC (K/kW) VF0 (V) Ta (°C) rF () for DC current for half-sine wave for 120 ABB Automation
Original

06D4407

Abstract: Key Parameters VRRM = 5000 IFAVM = 690 IFSM = 7.0 VF0 = 1.10 rF = 1.01 Avalanche Rectifier Diode V A kA V m 5SDA 06D5007 Doc. No. 5SYA 1125 - 01 Apr-98 Features · · · · , Limiting load integral 3 VF0 Threshold voltage 1.10 V rF Slope resistance 1.01 m VF , as follows: IFAVM = -VF0 + 2 (VF0)2 + 4 * f * rf * P 2 * f 2 * rf IFAVM (A) T max , 2.5 3.1 6 P (W) Tc (°C) RthJC (K/kW) VF0 (V) Ta (°C) rF () for DC current for
ABB Automation
Original
06D4407 06D3807

10D1703

Abstract: 10D2303 Key Parameters VRRM = 2300 IFAVM = 1140 IFSM = 13.5 VF0 = 0.83 rF = 0.30 Avalanche Rectifier Diode V A kA V m 5SDA 10D2303 Doc. No. 5SYA 1120 - 01 Apr-98 Features · · · · , It Half sine wave, TC = 85°C 910103 A s Limiting load integral 3 VF0 Threshold , calculated as follows: IFAVM = where P= -VF0 + 2 (VF0)2 + 4 * f * rf * P 2 * f 2 * rf , 1 2.5 3.1 6 P (W) Tc (°C) RthJC (K/kW) VF0 (V) Ta (°C) rF () for DC current for
ABB Automation
Original
10D2003 10D1703

5SDA27F2002

Abstract: DIODE Ifavm 30 A Key Parameters VRRM = 2000 IFAVM = 2700 IFSM = 31.0 VF0 = 0.79 rF = 0.09 Avalanche , °C 4805103 A s Limiting load integral 3 468010 A s VF0 Threshold voltage 0.79 V rF , ambient temperature Ta the maximum on-state current can be calculated as follows: IFAVM = -VF0 + 2 (VF0)2 + 4 * f * rf * P 2 * f 2 * rf IFAVM (A) T max (°C) Rthja (K/kW) 2 where TJ , (K/kW) VF0 (V) Ta (°C) rF () for DC current for half-sine wave for 120°el., sine for 60
ABB Automation
Original
27F1702 27F1402 5SDA27F2002 DIODE Ifavm 30 A 27F2002
Abstract: Key Parameters VRRM = 3200 IFAVM = 1870 IFSM = 23.5 VF0 = 0.95 rF = 0.23 Avalanche Rectifier Diode V A kA V m 5SDA 19F3205 Doc. No. 5SYA 1129 - 01 Apr-98 Features · · · · , load integral 3 260010 A s VF0 Threshold voltage 0.95 V rF Slope resistance 0.23 , the maximum on-state current can be calculated as follows: IFAVM = where -VF0 + 2 (VF0 , (A) T max (°C) Rthja (K/kW) 2 f = 1 2.5 3.1 6 P (W) Tc (°C) RthJC (K/kW) VF0 (V ABB Automation
Original
19F2905

IL350

Abstract: IL358 VF=0 V, f=1 MHz , BW(­3dB) Package Input-Output Capacitance CIO 1 pF VF=0 V, f=1 MHz Common Mode Capacitance Ccm 0.5 pF VF=0 V, f=1 MHz Coupled Characteristics K1 at IF=2 mA, VD=0 V Min
Siemens
Original
IL350 IL351 IL358 IL359 optocoupler 351 IL350/351/358/359 IL350/1/8/9 IL358/9

V.34 FAX MODEM

Abstract: IP125 CJ - 15 - pF VF=0 V, f=1.0 MHz Dynamic Resistance VF/IF - 6.0 - IF=10 mA CJ - 12 - pF VF=0 V, f=1.0 MHz Frequency Response BW(­3dB) - , - ns Input-Output Capacitance CIO - 1.0 - pF VF=0 V, f=1.0 MHz Common Mode Capacitance Ccm - 0.5 - pF VF=0 V, f=1.0 MHz Coupled Characteristics Min
Vishay Intertechnology
Original
IL388 V.34 FAX MODEM IP125

il388

Abstract: 350 ns VF=0 V, f=1 MHz Detector Junction Capacitance VF=0 V, f=1 MHz AC , Input-Output Capacitance CIO 1 pF VF=0 V, f=1 MHz Common Mode Capacitance Ccm 0.5 pF VF=0 V, f=1 MHz Max. Units Coupled Characteristics Min. K1 at IF=2 mA, VD=0 V 0.007
Siemens
Original
Abstract: Key Parameters VRRM = 3800 IFAVM = 790 IFSM = 7.6 VF0 = 1.01 rF = 0.72 Avalanche Rectifier Diode V A kA V m 5SDA 07D3806 Doc. No. 5SYA 1123 - 01 Apr-98 Features · · · · , 290103 A s Limiting load integral 3 VF0 Threshold voltage 1.01 V rF Slope resistance , = where -VF0 + 2 (VF0)2 + 4 * f * rf * P 2 * f 2 * rf TJ max - TC P= Rthjc or , ) Tc (°C) RthJC (K/kW) VF0 (V) Ta (°C) rF () for DC current for half-sine wave for 120 -
OCR Scan
BAS45 DO-34 7Z92I41

in4151

Abstract: IN4150 Key Parameters VRRM = 2300 IFAVM = 1140 IFSM = 13.5 VF0 = 0.83 rF = 0.30 Avalanche Rectifier Diode V A kA V m 5SDA 10D2303 Doc. No. 5SYA 1120 - 01 Apr-98 Features · · · · , It Half sine wave, TC = 85°C 910103 A s Limiting load integral 3 VF0 Threshold , calculated as follows: IFAVM = where P= -VF0 + 2 (VF0)2 + 4 * f * rf * P 2 * f 2 * rf , 1 2.5 3.1 6 P (W) Tc (°C) RthJC (K/kW) VF0 (V) Ta (°C) rF () for DC current for
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OCR Scan
1N4150 1N4151 1N4153 IN4150 IN4153 N4150 in4151 IN4153 diode DO-35 IN4151
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