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VCC-48

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Abstract: =25cC) Parameter Symbol Condition min typ max Unit Supply current Icc VCC=4.8V 19 34 51 mA Pin voltage Vref Vcc=4.8 , -31 Vcc=4.8 V -0.15 0 0.15 V Clamp voltage (3) V32-31 Vcc =4.8 V -0.15 0 0.15 V Clamp voltage (4) V30-31 Vcc=4.8 V -0.15 0 0.15 V Pulse separation level (l) Burst VCC=4.8V 1.4 1.8 2.2 V Pulse separation level (2) Chara Vcc=4.8 V 1.4 1.8 2.2 V Pulse separation level (3) Sync Vcc=4.8V 1.4 1.8 2.2 V Pulse , signals from the AN2154FAP. â  Features â'¢ Low power consumption : 180mW (Vcc=4.8V) â'¢ Responds to -
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AN2254FAP AIM2254FAP QFH048-P-1010 48-PINS V34-31
Abstract: =25cC) Parameter Symbol Condition min typ max Unit Supply current Icc VCC=4.8V 19 34 51 mA Pin voltage Vref Vcc=4.8 , -31 Vcc=4.8 V -0.15 0 0.15 V Clamp voltage (3) V32-31 Vcc =4.8 V -0.15 0 0.15 V Clamp voltage (4) V30-31 Vcc=4.8 V -0.15 0 0.15 V Pulse separation level (l) Burst VCC=4.8V 1.4 1.8 2.2 V Pulse separation level (2) Chara Vcc=4.8 V 1.4 1.8 2.2 V Pulse separation level (3) Sync Vcc=4.8V 1.4 1.8 2.2 V Pulse , signals from the AN2154FAP. â  Features â'¢ Low power consumption : 180mW (Vcc=4.8V) â'¢ Responds to -
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VCC48
Abstract: Voltage 0.40 V VCC=4.8 V, I0L=13 mA, IF=0 mA VOH High Level Output Voltage 2.4 V VCC=4.8 V, I0H= -800 , OPIS013 (Buffer, OpBn-Collectorl VOL Low Level Output Vohaga 0.40 V VCC=4.8 V, I0L=13 mA, lF=0 mA I0H High Level Output Current 100 M VCC=4.8 V, V0H=30 V lF=10.0mA 0PI8014 llnverter, Totem-Pole) VOL Low Level Output Voltage - 0.40 V VCC=4.8 V, I0L= 13 mA, IF=10.0 mA VOH High Level Output Voltage 2.4 V VCC=4.8 V, I0H= -800 fiA, lF=0 mA los Short Circuit Output Current -30 -100 mA VCC = 5.2 V -
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QPI8013 OPI8013 OP18014 10KHT op18012 OPI8012 0PI8Q12 0PI8Q14 0PI8Q15 E68730 DPI8012
Abstract: Rev A3 001026 RF2146 Gain vs. Pin Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz 30 -40 ACPR @ 1.25 MHz Offset vs. Pout Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz +25°C 25 -30°C +85°C -45 +25°C -30°C +85°C 2 , -60 5 -65 5 10 15 20 25 30 Pin (dBm) Pout (dBm) Gain vs. Pin Vcc=4.8 V, Vpc=3.6 V, +25°C 30 -40 ACPR @ 1.25 MHz Offset vs. Pout Vcc=4.8 V, Vpc=3.6 V, +25°C 1.88 GHz 25 1.91 GHz , 2-121 RF2146 Pout vs. Pin Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz 30 50 Efficiency vs. Pout Vcc=4.8 V RF Micro Devices
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1500MH 2000MH
Abstract: product{s). Parameter Specification Unit Condition Min. Typ. Max. Overall T=25°C, VCC=4.8V , Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz ACPR @ 1.25 MHz Offset vs. Pout Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz , / ! / i / / u S-â'"' Pin (dBm) Pout (dBm) Gain vs. Pin Vcc=4.8 V, Vpc=3.6 V, +25°C ACPR @ 1.25 MHz Offset vs. Pout Vcc=4.8 V, Vpc=3.6 V, +25°C -10 -5 10 15 Pin (dBm) 2-106 ^004131 , Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz -+25 °C -30" C . +85"C y*yS S/.-' SyS t â  Sy y f -
OCR Scan
1D04131
Abstract: Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz ACPR @ 1.25 MHz Offset vs. Pout Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz , (dBm) Gain vs. Pin Vcc=4.8 V, Vpc=3.6 V, +25°C ACPR @ 1.25 MHz Offset vs. Pout Vcc=4.8 V, Vpc , Pout (dBm) 2-153 RF2146 Pout vs. Pin Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz Efficiency vs. Pout Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz 30 50 +25°C +25°C -30°C 25 -30°C 40 , 5 10 15 Pin (dBm) 20 Pout (dBm) Pout vs. Pin Vcc=4.8 V, Vpc=3.6 V, +25°C RF Micro Devices
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Abstract: POWER AMPLIFIERS 2 2-152 Rev A2 990331 RF2146 Gain vs. Pin Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz ACPR @ 1.25 MHz Offset vs. Pout Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz 30 -40 +25°C +25°C -30°C , 5 10 15 Pin (dBm) 20 25 30 Pout (dBm) Gain vs. Pin Vcc=4.8 V, Vpc=3.6 V, +25°C ACPR @ 1.25 MHz Offset vs. Pout Vcc=4.8 V, Vpc=3.6 V, +25°C 30 -40 1.88 GHz 1.88 , vs. Pin Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz Efficiency vs. Pout Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz 30 RF Micro Devices
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L910
Abstract: =25 °C, VCC=4.8V, VPC=3.6V, P|N=+10dBm, Freq = 1880MHz Usable Frequency Range 1500 to 2000 MHz , RF2146 Gain vs. Pin Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz -5 0 5 Pin (dBm) ACPR @ 1.25 MHz Offset vs. Pout Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz \Jt -+25°C .30°C .+85°C , * -5 0 5 Pin (dBm) 15 20 Pout (dBm) Gain vs. Pin Vcc=4.8 V, Vpc=3.6 V, +25 °C â'" 1.88 , Offset vs. Pout Vcc=4.8 V, Vpc=3.6 V, +25 °C ) If rJ: -1.88 GHz -1.91 GHz .1.85 GHz -
OCR Scan
21464-10 RF2146PCBA
Abstract: VCC=4.8V, I0L=13 mA, IF=0 mA â OH High Level Output Current 100 M Vcc=4.8 V, V0H=30 V lF=10.0mA 0PI8014 llnverter, Totem-Pole) VOL Low Level Output Voltage - 0.40 V VCC=4.8 V, I0L = 13 mA, IF=10.0 mA VOH High Level Output Voltage 2.4 V Vcc=4.8 V, I0H= -800 fiA, If=0 mA â OS Short Circuit Output , , Totem-Pole) VOL Low Level Output Voltage 0.40 V VCC=4.8V, I0L=13 mA, IF=0 mA V0H High Level Output Voltage 2.4 V VCC=4.8 V, I0H= -800 /¡A. IF= 10.0 mA fos Short Circuit Output Current -30 -100 mA VCC -
OCR Scan
OPI8015 0PI8015 QPI8014 0PI8Q13 E58730 0PI8012 0PI8013
Abstract: OPI8Q12 (Buffer, Totern Pole) 0.40 VCC=4.8 V, IOL=13 m A, IF=0 mA VCC=4.8 V, I0H = -8D0 /iA, IF , 0.40 V V VCC=4.8 V, I0L=13 mA, IF=10.0 mA Vcc=4.8 V, I0H= -800 jiA, If = 0 mA -100 mA VCC= 5.2 , fA Vcc = 4.8 V, !0 L = 13 mA, IF=10.0 mA VCC=4.8 V, VOH = 30 V, IF=0 mA 0P18012, OPI8014 -
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S2545
Abstract: 990331 Rev A 990331 2 Gain (dB) Gain (dB) AC PR (dBc) AC PR (dBc) Gain vs. P in Vcc=4.8 , 't r i e - : X - ." 2-145 POWER AMPLIFIERS ACPR @ 1.25 MHz Offset vs. Pout Vcc=4.8 V -
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Transistor TT 2144 transistor tt 2146 2000M 2150M
Abstract: 1N4002 Pull up ALE VFlexRay 10K C V88121 VCC-48 RD 10K R52 10K R49 R19 , CS4 CS1 SDO SDI SCK MBSU_RX1 MBSU_TX1 INT4 INT3 INT2 INT1 VSS 48 VCC-48 47 D14 46 Fujitsu
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B82789C0104N002 MB88121 d1545 VG96 AD-04 DIP8 socket sds s2 100N 9c transistor LT3506A VCC-16 AD10/MDS2 VCC-32
Abstract: Vcc=4.8 V, Pin=0 dBm, 915 MHz 30 +25°C 20 -40°C +85°C 10 60 75 Efficiency vs. Vb Vcc=4.8 V, Pin RF Micro Devices
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RF2103P 450MH 1000MH
Abstract: Vb (Volts) Pout vs. Vb Vcc=4.8 V, Pin=0 dBm, 915 MHz Efficiency vs. Vb Vcc=4.8 V, Pin=0 dBm RF Micro Devices
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SOIC-14
Abstract: ) V b (V olts) Pout vs. Vb Vcc=4.8 V, Pin=0 dBm, 915 MHz Efficiency vs. Vb Vcc=4.8 V, Pin=0 dBm -
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MZ 9 TRANSISTOR
Abstract: VCC17 VCC19 VSS29 VCC36 VSS40 VCC42 VSS46 VCC48 VSS53 VCC55 VSS59 VCC62 Advanced Micro Devices
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NC56 VCC101 VSS43 NC42 VCC84 VSS55 1100MH 200MH 400MH 128KBL1 256K16 MS-0622D/8/00
Abstract: Efficiency vs. Vb Vcc=3.6 V, Pin=0 dBm, 915 MHz Vb (Volts) Vb (Volts) Pout vs. Vb Vcc=4.8 V, Pin=0 dBm , Efficiency vs. Vb Vcc=4.8 V, Pin=0 dBm, 915 MHz -+-25°C .40°C -+85°C â -
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EFT 373 25CC 915 transistor
Abstract: 5.0 4.0 5.0 4.0 5.0 Vb (Volts) Pout vs. Vb Vcc=4.8 V, Pin=0 dBm, 915 MHz Efficiency vs. Vb Vcc=4.8 V, Pin=0 dBm, 915 MHz 75 30 +25°C 20 +25°C -40°C -40°C 60 RF Micro Devices
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marking 5Fo
Abstract: Vb (Volts) Pout vs. Vb Vcc=4.8 V, Pin=0 dBm, 915 MHz Efficiency vs. Vb Vcc=4.8 V, Pin=0 dBm RF Micro Devices
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Abstract: VCC36 VCC37 VCC38 VCC39 VCC40 VCC41 VCC42 VCC43 VCC44 VCC45 VCC46 VCC47 VCC48 VCC49 RSVD BGA495 GND -
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U503A c516 TP517 U503B VCC29 TP509 TP512 TP510 TP511 TP502 TP506
Abstract: 990331 Rev A 990331 2 Gain (dB) Gain (dB) AC PR (dBc) AC PR (dBc) Gain vs. P in Vcc=4.8 , 't r i e - : X - ." 2-145 POWER AMPLIFIERS ACPR @ 1.25 MHz Offset vs. Pout Vcc=4.8 V -
OCR Scan
AN6561 AN6561L SIP009-P-0000 block diagram of dual 15v power supply TA1216 0012M25 T3SA55
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