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ISL9014AIRBCZ-T Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C visit Intersil Buy
ISL9014AIRFCZ-T Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C visit Intersil Buy
ISL9014AIRJBZ-T Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C visit Intersil Buy
ISL9014AIRKCZ-T Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C visit Intersil Buy
ISL9014AIRKPZ-T Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C visit Intersil Buy
ISL9014AIRNCZ-T Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C visit Intersil Buy

V. 9014 c

Catalog Datasheet MFG & Type PDF Document Tags

BR 9014 transistor

Abstract: BR 9014 ST 9014 VCE=5V 5 4 3 400 2 10 P tot 300 IC Tamb=100 o C 5 4 o 25 C , =25 C 5 4 2 5 o 7 5 10 2 ST 9014 v=0 2 10 -1 10 -6 3 tp v= T , current V 0.5 ST 9014 ST 9014 3 10 VCE=5V I C/I B =20 5 4 3 0.4 o 100 C , dB 20 18 ST 9014 VCE=5V f=1KHz Tamb=25o C 14 dB 20 18 100K 16 F Common emitter collector characteristics 16 500 F 10K R G =1M 12 ST 9014 I C=0.2mA R G =2K
Semtech Electronics
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BR 9014

Abstract: BR 9014 c are kept at ambient temperature at a distance of 2 mm from case mW 500 mA 2 10 S 9014 S 9014 VCE=5V 5 4 3 400 2 10 P tot 300 IC Tamb=100 o C 5 4 o 25 C , versus collector current V 0.5 S 9014 S 9014 3 10 VCE=5V I C/I B =20 5 4 3 , versus collector current dB 20 18 S 9014 VCE=5V f=1KHz Tamb=25o C 14 dB 20 18 100K , ) Rank Range A B C D 60-150 100-300 200-600 400-1000 S9014 Admissible power
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BR 9014 BR 9014 c BR 9014 transistor transistors BR 9014 TRANSISTOR 9014 V. 9014 c

BR 9014

Abstract: 9014 versus collector current V 0.5 ST 9014 ST 9014 3 10 VCE=5V I C/I B =20 5 4 3 , versus collector current dB 20 18 ST 9014 14 dB 20 VCE=5V f=1KHz Tamb=25o C 18 , 9014 I C=0.2mA R G =2K f=1KHz f=200Hz Tamb=25o C 14 12 10 1K 8 10 8 6 6 500 , ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As
Semtech Electronics
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9014 C 9014 transistor transistor 9014 npn TRANSISTOR c 9014 ST 9014 C transistor 9014 C npn

BR 9014

Abstract: BR 9014 transistor VCE=10V 3 0.05 r thA Tamb=25 C 5 4 2 5 o 7 5 10 2 ST 9014 v , voltage versus collector current V 0.5 ST 9014 ST 9014 3 10 VCE=5V I C/I B =20 5 , Noise figure versus collector current dB 20 18 ST 9014 VCE=5V f=1KHz Tamb=25o C 14 dB , =1M 12 ST 9014 I C=0.2mA R G =2K f=1KHz f=200Hz Tamb=25o C 14 12 10 1K 8 10 , ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The
Semtech Electronics
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st 9014 BR 9014 C TRANSISTOR transistor 9014 c st9014 9014 Transistor 9014 C

transistor 9014 C npn

Abstract: V. 9014 c collector current HN 9014 ;c//e=20 i/ vCEsat 0,3 SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary , HN 9014 NPN Silicon Expitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C, and ] ^^ D, according to its DC current gain. As complementary type the PNP transistor HN 9015 is recommended. 3 c E On special request, these , .0o.55 TRANSISTOR PACKAGE OUTLINE" on page 80 for the 2.5 available pin options. â'"^ E ;0 0 0 C B TO-92 Plastic
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S 9014 npn V 9014 c 9014c transistor npn c 9014 C 9014 transistors c 9014 g c 625

BR 9014

Abstract: BR 9014 transistor ST 9014 VCE=5V 5 4 3 400 2 10 P tot 300 IC Tamb=100 oC 5 4 o 25 C , =25 C 5 4 2 5 o 7 5 10 2 ST 9014 v=0 2 10 -1 10 -6 3 tp v= T , current V 0.5 ST 9014 ST 9014 3 10 VCE=5V I C/I B =20 5 4 3 0.4 o 100 C , dB 20 18 ST 9014 VCE=5V f=1KHz Tamb=25o C 14 dB 20 18 100K 16 F Common emitter collector characteristics 16 500 12 F 10K R G =1M ST 9014 I C=0.2mA R G =2K
Semtech Electronics
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c 9014 c 024 c 9014 s 9014 transistor

CP1005

Abstract: 9011 9012 9013 9014 9018 IF AM/FM IF KM 9011/8 KM901I/8 KM90II/8 -î^-àm/I AF Amp. J KM 9014 Or KM90I5 AF A,np 2 , , AM CONVERTER to-92a à EBC KM 9012 PNP AUDIO POWER OUTPUT KM 9013 NPN AUDIO POWER OUTPUT KM 9014 , DEVICE SPECIFICATIONS [Ta - 25°C unless otherwise specified ] MAXIMUM RATINGS ELECTRICAL , (VI (VI (VI I m W ) min max (nA) max VCB (v> lv) «VP max ic (mA) VCE (v) (v) typ max
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CP1005 9011 9012 9013 9014 9018 9011 NPN transistor 9011 transistor 9016 9015 PNP KM90II KM90I4 KM9015 KM90I

9014 2n3904

Abstract: 3.7v battery charger circuit diagram : PLASTIC DIP S: SMALL OUTLINE TEMPERATURE RANGE C=0°C~70°C -V DETECTION LEVEL 1: -1% 6: -0.25% , .20mA . 0°C to 70°C , -65°C to 150°C ANALOG INTEGRATIONS CORPORATION www.analog.com.tw 4F, 9 Industry E. 9th Road , 4.7K R4 1.5K R8 MODE VNTC ° ! ELECTRICAL CHARACTERISTICS (VDD=12.5V, Ta=25°C, unless , 22 18 0 20 VDD(V) 40 60 80 Temperature (°C) Output Resistance of LED pin
Analog Integrations
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AIC1761 9014 2n3904 3.7v battery charger circuit diagram 1N4148 1N5819 AIC1563 AIC1761/1766 DS-1761-02 AIC1766 14-PIN

B 9014 npn

Abstract: C 9014 transistor C E B C Packing Tape Box Bulk 1 of 3 QW-R201-031.B 9014 NPN SILICON TRANSISTOR , TECHNOLOGIES CO., LTD www.unisonic.com.tw C 200-600 D 400-1000 2 of 3 QW-R201-031.B 9014 , UNISONIC TECHNOLOGIES CO., LTD 9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. (450mW) * Excellent hFE linearity. * Complementary to , Lead Free Plating 9014-x-T92-B 9014L-x-T92-B 9014-x-T92-K 9014L-x-T92-K Package
Unisonic Technologies
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9014L B 9014 npn data sheet transistor 9014 npn data sheet transistor 9014 9014 transistor specification 9014 npn Free 9014 9014L-

transistor c 9018

Abstract: Transistor CL 100 OUTPUT CL 9013 NPN AUDIO POWER OUTPUT i CL 9014 NPN AUDIO DRIVER CL 9015 PNP AUDIO DRIVER , [Ta = 25°C unless otherwise specified] TYPE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS , (dB) tYP InA) max VCB (v) (v) typ max ic vCE (mA) (v) (v) typ max 'c 'B (mA) (mA) (MHz) min typ 'C VCE (mA) (v) CPF) typ max VCB (v) CL 9011 25 20 3 300 28 198 50 18 0 67 0 85 1 5 0118 05 10 1 , 9013 25 20 5 500 64 350 500 18 0.7 085 10 1 02 0.6 250 25 CL 9014 25 20 5 500 60 1000 50 18 0 63
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transistor c 9018 Transistor CL 100 transistor 9013 NPN audio output 9016 transistor audio output TRANSISTOR NPN 9013 npn 9016 transistor T0-92B

9011 9012 9013 9014 9018

Abstract: 9011 NPN transistor -92B CL 9012 PNP AUDIO POWER OUTPUT CL 9013 NPN AUDIO POWER OUTPUT i CL 9014 NPN AUDIO DRIVER CL 9015 PNP AUDIO DRIVER CL 9016 NPN FM RF E Cl â'ž 0 o CL 9018 NPN AM/FM IF, FM CONVERTER C , SPECIFICATIONS [Ta = 25°C unless otherwise specified] TYPE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS , CdB) tYP InA) max VCB (v) (v) typ max ic vCE (mA) (v) (v) typ max 'c 'B (mA) (mA) (MHz) min typ 'C VCE (mA) (v) (PF> typ max VCB (v) CL 9011 25 20 3 300 28 198 50 18 0 67 0 85 1 5 0118 05 10 1
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F 9016 transistor 9018 transistor pnp transistor 9015 NPN 9013 transistor 9015 c 9013 NPN Transistor CL9000
Abstract: © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R201-031.C 9014  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT , UNISONIC TECHNOLOGIES CO., LTD 9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW , : Emitter B: Base C: Collector  TO-92 Pin Assignment 1 2 3 E B C E B C Packing , functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise Unisonic Technologies
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9014G-

2 SC 9014

Abstract: ELECTRICAL CHARACTERISTICS (Over the operating rating, TA = -10ï'°C~ +40ï'°C, VDD=4.0V ± 10%) PARAMETER , operating rating, TA = -10ï'°C ~ +40ï'°C, VDD= 4.0V ± 10%) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Oscillator Frequency (Note 1) FOSC TA=25ï'°C, R=200Kâ"¦ 102 128 154 KHz Carrier Frequency , OSCI 3 GND OFF TESTB R10 1K CR1 27.145 V2 9014 S1 V5 8550 V4 4.7V R12 , C7 68 C8 0.02U C3 47 R2 4.7K V3 LED V1 9014 C9 R5 68 3.3K R1 100 R8 3.9K
Unisonic Technologies
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2 SC 9014 RCT02 DIP-14 RCR02 QW-R502-002

mcc 90-12

Abstract: MCC 90-16 thyristor Itrms Itavm Tc = 85°C A MCC 90-06 lo 1 MCC 90-08 io 1 MCC 90-12 go 1 MCC 90-12 ho 1 MCC 90-12 io 1 MCC 90-14 io 1 MCC 90-15 io 1 MCC 90-16 ho 1 MCC 90-16 io 1 s a Nr. E 72873 (M) MCC 90-06 io 8 MCC 90-08 io 8 MCC 90-12 go 8 MCC 90-12 ho 8 MCC 90-12 io 8 MCC 90-14 ho 8 MCC 90-14 io 8 MCC 90-15 io 8 MCC , MCC MCC MCC À MCC ¿ MCC À MCC ¿ MCC À MCC À MCC ¿M CC MCC ¿M CC ¿M CC ¿MCC ¿M CC ¿M CC ¿M CC ¿M C C ¿M C C 130-06 130-08 130-12 130-14 130-16 160-06 160-08 160-12 160-14 160-16 165-06 165-06 165-08
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mcc 90-12 MCC 90-16 mcc 250 thyristor abb mcc 90-12 ABB thyristor modules MCC 65 MCC 90-06 io 8 K21-0120 K21-0180 K21-0180A K21-0265 K41-0150 K41-0150C

9014 ch

Abstract: transistor npn c 9014 CONVERTER TO-92A à E6C KM 9012 PNP AUDIO POWER OUTPUT KM 9013 NPN AUDIO POWER OUTPUT KM 9014 NPN AUDIO , - - 1 10 lC CmA) KM 9014 KM 9015 100 HFE 80 60 40 20 0 , \ > KM 9011 KM 3016 KM 9018 0.1 1 10 lc ( mA-) 100 DEVICE SPECIFICATIONS [TA - 25°C unless , (v) |v) typ max 'C VCE (mA) (v) (v) typ max >c "b (mA) (mA) ( MHz) min typ 'C VCE (m A) (v) (PF) typ , 85 10 1 02 06 250 25 KM 9014 25 20 5 500 60 1000 50 18 0 63 0 85 1 5 007 0 5 10 1 50 140 1 5
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9014 ch 100-10L 9018 Transistor-9013 h 9011 9012 pnp transistor

9014 2n3904

Abstract: tip 9012 G OUTLINE TEMPERATURE RANGE C=0°C~70°C -V DETECTION LEVEL 1: -1% 6: -0.25% AIC1761-CN08 , .20mA . 0°C to 70°C , -65°C to 150°C ANALOG INTEGRATIONS CORPORATION www.analog.com.tw 4F, 9 Industry E. 9th Road , 1.5K R8 MODE VNTC ELECTRICAL CHARACTERISTICS PARAMETER (VDD=12.5V, Ta=25°C, unless , 22 18 0 20 VDD(V) 40 60 80 Temperature (°C) Output Resistance of LED pin
Analog Integrations
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tip 9012 G 1000maH basic transistor 9014 NTC 150k 270k ntc 015X45
Abstract: -002,C UTC RCT02 CMOS IC Logic Block Diagram OFF OSCI Oscillator Timing Generator 4 , this pin is connected to GND UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R502-002,C UTC RCT02 , V V mA mW °C °C DC ELECTRICAL CHARACTERISTICS (Over the operating rating, TA= -10°C~ +40°C,VDD=4.0V±10%) PARAMETER Operating Voltage Supply Current Standby Current Input Current , -4.0 0.5 150 AC ELECTRICAL CHARACTERISTICS (Over the operating rating, TA= -10°C to +40°C,VDD Unisonic Technologies
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transistor npn c 9014

Abstract: 9014 NPN UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES , -92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise , ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS , . UNIT V V V nA nA V V V pF MHz dB 1 QW-R201-031,A UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE RANK RANGE UTC A 60-150 B 100-300 C 200-600 UNISONIC
Unisonic Technologies
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socket 90.73

Abstract: relay 60.13 : (-40.+70)°C TORQUE: 0.5 Nm MAX WIRE SIZE: 67 - ® C 67 GOST NO NC NC NO 24 6 22 , CATEGORY: IP 20 AMBIENT TEMPERATURE: (-40.+70)°C TORQUE: 0.8 Nm MAX WIRE SIZE: 75 - = GOST , 20 AMBIENT TEMPERATURE: (-40.+70)°C TORQUE: 0.5 Nm MAX WIRE SIZE: solid wire mm 7.5 US 64 3.2 ® C 7.5 Approvals (according to type): 64 3.2 90.23 38 23 38 , 20 AMBIENT TEMPERATURE: (-40.+70)°C TORQUE: 0.8 Nm MAX WIRE SIZE: = C 35 = 6
Finder
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socket 90.73 relay 60.13 finder 90.73 C 9013 relay finder Type 60.12 99.01.9.024.99

PC POWER SUPPLY CIRCUIT diagram

Abstract: pc power supply block diagram *Few external components needed UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R502-002,C UTC , to GND UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R502-002,C UTC RCT02 CMOS ABSOLUTE , -0.5 ~ +5.5 20 500 -10 to +40 -25 to +85 Io PD TA TSTG UNIT V V V mA mW °C °C DC ELECTRICAL CHARACTERISTICS (Over the operating rating, TA= -10°C~ +40°C,VDD=4.0V±10%) PARAMETER , the operating rating, TA= -10°C to +40°C,VDD=4.0V±10%) PARAMETER MIN TYP MAX UNITS
Unisonic Technologies
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PC POWER SUPPLY CIRCUIT diagram pc power supply block diagram pc power supply unit circuit diagram backward R7200K
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