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TLV8802DGKT Texas Instruments 320 nA Nanopower Operational Amplifier for Cost-Optimized Systems 8-VSSOP -40 to 125 visit Texas Instruments

UV diode 320 nm

Catalog Datasheet MFG & Type PDF Document Tags

UVTOP320-HL-TO39

Abstract: UV laser diode 280 nm -39, unique extreme short UV wavelengths UVTOP255-FW-TO39, 255 nm +/- 5 nm, 20 mA, TO-39, flat window , UVTOP320-FW-TO39, 320 nm +/- 5 nm, 20 mA, TO-39, flat window, datasheet on request UVTOP320-HL-TO39, 320 nm +/- 5 nm, 20 mA, TO-39, hemispherical lens window, datasheet on request UVTOP320-BL-TO39, 320 nm +/- 5 nm, 20 mA, TO-39, ball lens window, datasheet on request UVTOP320-NW-TO39, 320 nm +/- 5 nm, 20 mA, TO , , YAG, Cr:LiSAF, diode, HeCd, III and IV harmonics YAG, UV 531.00.0.310, I, II, III and IV harmonics
Roithner LaserTechnik
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UV laser diode 280 nm UVTOP255-HL-TO39 UVTOP255-BL-TO39 UVTOP255-NW-TO39 UVTOP265-FW-TO39 UVTOP265-HL-TO39 UVTOP265-BL-TO39

S10604

Abstract: S11154-01CT nm cannot be detected by the PMT. To detect shorter UV wavelengths, special window materials such as synthetic silica (to 160 nm), UV glass (to 185 nm) and magnesium ï¬'uoride (to 115 nm) are required (see , 3.5 eV at 365 nm). The resulting photocurrent gives a measure of the incident UV light intensity , applied to UV light: UVA (315 to 400 nm) is also known as â'black lightâ'. These wavelengths are , glass window permits detection down to 190 nm and both VUV and extreme UV wavelengths can be detected
Hamamatsu
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S10604 S11154-01CT C9750 S11059-78HT C10990 C10988MA C10627 PMA-20 SE-17141 RU-127015 D-82211

s34 diode

Abstract: UV diode 320 nm AMERICA : 800 498-JDSU (5378) The JDSU S34 series 14xx nm, 320/340/360/430/450 mW Diode Laser is , OPTICAL COMMUNICATIONS Up to 450mW Fiber Bragg Grating Stabilized 14xx nm Pump Modules S34 Series Key Features · Up to 450 mW (1420 and 1452 nm) · Up to 430 mW (1480 nm) · Up to 360 mW (1420 to 1465 nm) · Up to 340 mW (1466 to 1495 nm) · Up to 320 mW (1496 to 1510 nm) · Fiber Bragg , ) S34 S34+ Power in band (t±2 nm) Spectral bandwidth, RMS Polarization extinction ratio Laser Diode
JDS Uniphase
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GR-468-CORE s34 diode UV diode 320 nm s34 power diode 1480 nm laser diode UV diode 280 nm UV diode 100 nm to 280 nm 5378-JDSU S34-ABC123 S34PUMP

UV diode 100 nm to 280 nm

Abstract: JDSU pump laser -JDSU (5378) The JDSU 3400 Series 14xx nm, 320/340/360 mW Diode Laser is wavelength selected between 1420 , COMMUNICATIONS COMPONENTS 14xx nm, 360 mW Diode Laser 3400 Series Key Features · Up to 360 mW (1420 to 1465 nm) · Up to 340 mW (1466 to 1495 nm) · Up to 320 mW (1496 to 1510 nm) · Grating , nm 180 870 200 950 220 1030 240 1110 260 1190 280 1270 300 1350 320 1400 340 1460 , ) Power in band (t ±2 nm) Spectral bandwidth, RMS Polarization extinction ratio Diode Laser Threshold
JDS Uniphase
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JDSU pump laser PIN photodiode 420 nm JDSU laser diode Laser Diode 405 nm SM15 UV diode 200 nm 1-800-498-JDSU 800-5378-JDSU 3400PUMP

UV diode 100 nm to 280 nm

Abstract: UV diode 320 nm nm, 320/340/360 mW Laser Diode is wavelength selected between 1420 and 1510 nm using , COMMUNICATIONS COMPONENTS 14xx nm, 360 mW Laser Diode 3400 Series Key Features · Up to 360 mW (1420 to 1465 nm) · Up to 340 mW (1466 to 1495 nm) · Up to 320 mW (1496 to 1510 nm) · Grating , 1190 280 1270 300 1350 320 1350 340 1400 360 1460 Target Wavelength Range 1466 to 1495 nm 180 870 200 , 1510 nm 180 870 200 950 220 1040 240 1140 260 1240 280 1350 300 1400 320 1460 1. Iop EOL = 1.2 x Iop
JDS Uniphase
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1495nm Laser Diode 405 nm 400 mW

transistor TIP 320

Abstract: TRANSISTOR tip 126 OPTOELECTRONICS PLASTIC T-1 PAIR QPC1213 PACKAGE DIMENSIONS ,.126(3.20) 106(2.69) .050(1.27) REF CATHODE 110(2.79) 090(2.29) REFERENCE SURFACE .030 (0.76P NOM J_ T ,126(3.20) 106(2.69 , (2.29) .018 0.46 SO ± 003 (±0.08) jm ¿V 65 4.19) TYP 2 PLCS 45^3.68) INFRARED LED ST2138 .018 (0.46) SO 19, ± 003 (±0.08 dfa ¿V'65 (4.1 a) TYP 2 PLCS' tsJ/y 145,(3.68) PHOTOTRANSISTOR NOTES , . DESCRIPTION FEATURE The QPC1213 consists of an 880 nm AIGaAs LED and a silicon phototransistor mounted in
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transistor TIP 320 TRANSISTOR tip 126 TIP 40c transistor TRANSISTOR tip 127 qpc1213 transistor

smd diode UJ 64 A

Abstract: smd diode UM 08 ,76 244,34 RLT905-30G, 905 nm, 30 mW, sm, 9 mm 320,32 352,93 www.roithner-laser.com , EUR USD infrared laser diode TO-can, TO3, C-mount, HHL package 1430 - 1750 nm 1-9 pcs , RLT1500-30G, 1500 nm, 30 mW, sm, 9 mm 320,32 352,93 S1550-5MG-BL, 1550 nm, 5 mW, TO56, 85 , , 9 mm 320,32 352,93 RLT1550-100G, 1550 nm, 100 mW, Iop typ. 800 mA, aperture: 100x1 um², mm , diode chip dies 635, 650, 980 ,1310 nm 20-99 pcs. 20-99 pcs. CHIP-635-P5, 635 nm, 5 mW, laser
Roithner LaserTechnik
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smd diode UJ 64 A smd diode UM 08 SLD3237VF SLD3237VFR SLD3236VF 20/SPL1550-10-9-PD RLU4116E RLT390-50CMG RLT395-50CMG RLT400-50CMG RLT405-50CMG DL-3146-151
Abstract: COMMUNICATIONS COMPONENTS 14xx nm, 300 mW Laser Diode 3400 Series Key Features â'¢ Up to 320 mW (1420 to 1465 nm) â'¢ Up to 300 mW (1466 to 1495 nm) â'¢ Up to 280 mW (1496 to 1510 nm) â , NORTH AMERICA : 800 498-JDSU (5378) The JDSU 3400 Series 14xx nm, 300 mW Laser Diode is wavelength selected between 1420 and 1510 nm using grating-stabilized, polarization maintaining (PM) fiber. It is , 240 1110 260 1190 280 1270 300 1350 320 1350 Target Wavelength Range 1466 to 1495 nm 180 JDS Uniphase
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Light Detector laser

Abstract: Enhanced sensitivity in the UV to visible range Metal, ceramic 320 to 650 nm High sensitivity in , range (UV/visible/infrared, X-ray, high energy) ♠High sensitivity, high-speed response â , APD 5 Opto-semiconductor selection guide High energy particle X-ray UV Visible Point , Si photodiode for UV light Pollution analysis, spectroscopy, medical use, UV detection, colorimetry Schottky type GaAsP photodiode Pollution analysis, spectroscopy, colorimetry, UV detection
Hamamatsu
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Light Detector laser KOTH0001E15

near IR photodiodes

Abstract: S8745-01 capacitance VR=0 V f=10 kHz 500 Package 320 to 1100 Glass epoxy 0.54 (λ=940 nm) 1.3 × 1.3 , Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR , Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package , ······················································ 8 Si photodiodes for precision photometry····················· â'¢ For UV , ···························································· â'¢ For UV to near IR (IR sensitivity suppressed type) ······· â'¢ For visible range to
Hamamatsu
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near IR photodiodes S8745-01 S8558 KSPD0001E09

JDSU CQF935 DFB

Abstract: uniphase CQF935 Features · 1550 nm WDM distributed feedback laser diode · High power (>63 mW) · Polarization maintaining , Product Bulletin 63 mW 1550 nm CW DFB Lasers with PM Fiber for WDM Applications CQF935/908 , 1610.06 nm) and in channel definition, thus adhering to the 100 GHz grid (0.8 nm) relative to a frequency of 193.1 THz (i.e., a wavelength of 1552.52 nm). It is possible to customize the wavelength spacing to a 50 GHz grid (0.4 nm). Each laser's wavelength is accurately measured, and the laser itself is
JDS Uniphase
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JDSU CQF935 DFB uniphase CQF935 CQF935 JDS uniphase CQF935 RWR-030-42-03093-WWM

PM200DSA120

Abstract: free-wheel diode power devices. 0.64 MM SQ. PIN (10 TYP.) L K F G M C1 VP1 VCC FPO , Mounting Torque, M6 Mounting Screws - 3.92~5.88 N·m Mounting Torque, M6 Main Terminal Screws - 3.92~5.88 N·m Module Weight (Typical) - 630 Grams Power Device Junction , Trip Level Inverter Part SC 320 540 - Amperes t off(OC) -20°C T 125°C, VD = 15V , 85 95 105 °C UV Trip Level 11.5 12.0 12.5 Volts Over Current Delay Time
Mitsubishi
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PM200DSA120

PM200DSA120

Abstract: free-wheel diode power devices. 0.64 MM SQ. PIN (10 TYP.) L K F G M C1 VP1 VCC FPO , Mounting Torque, M6 Mounting Screws - 3.92~5.88 N·m Mounting Torque, M6 Main Terminal Screws - 3.92~5.88 N·m Module Weight (Typical) - 630 Grams Power Device Junction , -20°C T 125°C, VD = 15V 320 540 - Amperes Control Sector Over Temperature , 105 °C UV Trip Level 11.5 12.0 12.5 Volts UVr Reset Level - 12.5
Mitsubishi
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indium gallium arsenide phosphide

Abstract: UV LED 320 nm devices are made with Aluminum Indium Gallium Phosphide on Gallium Arsenide light emitting diode. The , Test Condition Luminous Intensity Iv 2F3VAK 2F3VAK-TU 2F3VAK-UV 1800 1800 3200 7000 6400 11200 med lF , -ST 560 560 1000 2300 2000 3600 2R3VAK 2R3VAK-QR 2R3VAK-RS 320 320 560 1500 1120 2000 Viewing , 623 nm Measurement @ peak (Fig.1) Dominant Wavelength Ad 612 nm Note 6 Spectral Line Half-Width A A 17 nm Forward Voltage Vf 2.2 2.6 V If = 20mA Reverse Current Ir 100 ÃA Vr = 4V
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indium gallium arsenide phosphide UV LED 320 nm

IR photodiode sensor

Abstract: Photodiode Array linear use. T he NM OS linear im age sensors also feature large active areas, high UV sensitivity and , area of 1.175mm (width) X 2.0mm (height) with 1.575mm pitch. This diode is s p e cia lly designed fo r , range from the UV through near infrared region. T hey also feature low cross-talk between elements, thus , Typ. (nm) (A/W) 800 0.5 Dark Current Id V r=5V Typ. (nA) 0.1 120 Cut-off Frequency fc Vn=5V, Rl = 50Q Typ. (MHz) 100 320 to 1000 0.95X0.95 ; i! · I - . - - .I - - -* . ' Elem
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C4351 IR photodiode sensor Photodiode Array linear C2334 silicon linear photodiode array linear array photodiode element photodiode linear array 256 16-ELEMENT S5668 46-ELEMENT S4111

TSL2671

Abstract: TSL267 a pulsed GaAs light-emitting diode with peak wavelength: p = 940 nm, tr < 1 µs, tf < 1 µs. B. The , light intensity (irradiance) on the photodiode. The TSL267 has a transimpedance gain of 320 M. The , Characteristics at VDD = 5 V, TA = 25°C, p = 940 nm, RL = 10 k (unless otherwise noted) (see Notes 2, 3, and 4 , °C ­15 µV/°C Ne Irradiance responsivity See Note 5 0.45 V/(µW/cm2) PSRR Power , made using small-angle incident radiation from a light-emitting diode (LED) optical source. The input
Texas Advanced Optoelectronic Solutions
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TSL2671 TAOS033

TSLX257

Abstract: TAOS027C 0.06 0.033 0.093 µV/°C 0.09 0.53 2.7 -15 p = 635 nm, see Notes 6 and 7 IDD , light-emitting diode with the following characteristics: peak wavelength p = 470 nm, spectral halfwidth ½ = 35 , diode with the following characteristics: peak wavelength p = 524 nm, spectral halfwidth ½ = 47 nm , (irradiance) on the photodiode. Each device has a transimpedance gain of 320 M with improved offset voltage , coefficient of dark voltage (VD) 15 Ee = 1.6 µW/cm2, p = 524 nm, Note 5 2.7 1.3 2 1.18
Texas Advanced Optoelectronic Solutions
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TSLB257 TSLR257 TAOS027C TSLX257 tslg257 CM500 TSLG257

TSLG257

Abstract: TSLX257 0.24 0.027 p = 565 nm, see Notes 7 and 8 0.015 0.20 0.06 0.033 0.093 µV/°C , supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength p = 470 nm , light-emitting diode with the following characteristics: peak wavelength p = 524 nm, spectral halfwidth ½ = 47 , diode with the following characteristics: peak wavelength p = 635 nm, spectral halfwidth ½ = 17 nm , diode with the following characteristics: peak wavelength p = 565 nm, spectral halfwidth ½ = 28 nm
Texas Advanced Optoelectronic Solutions
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UV led diode 320 nm Texas Advanced Optoelectronic Solutions TAOS027A
Abstract: 565 nm, see Notes 7 and 8 0.015 0.20 0.06 0.033 0.093 µV/°C 0.09 0.53 2.7 â'15 λp = 635 nm, see Notes 6 and 7 IDD â'15 λp = 524 nm, see Notes 5 and 7 PSRR â'15 λp = 470 nm, see Notes 4 and 7 Illuminance responsivity TA = 0°C to 70 , intensity (irradiance) on the photodiode. Each device has a transimpedance gain of 320 Mâ"¦ with improved , , λp = 524 nm, Note 5 2.7 1.3 2 1.18 0.35 1.25 0.14 λp =565 nm, see Notes 7 and 8 Texas Advanced Optoelectronic Solutions
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TSLG257

Abstract: UV led diode 320 nm µV/°C 0.09 0.53 2.7 ­15 p = 635 nm, see Notes 6 and 7 IDD ­15 p = 524 nm , light-emitting diode with the following characteristics: peak wavelength p = 470 nm, spectral halfwidth ½ = 35 , diode with the following characteristics: peak wavelength p = 524 nm, spectral halfwidth ½ = 47 nm , (irradiance) on the photodiode. Each device has a transimpedance gain of 320 M with improved offset voltage , (VD) 15 Ee = 1.6 µW/cm2, p = 524 nm, Note 5 2.7 1.3 2 1.18 0.35 1.25 0.14 p
ELFA
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TAOS027B
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