NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: AMERICA : 800 498-JDSU 498-JDSU (5378) The JDSU S34 series 14xx nm, 320/340/360/430/450 mW Diode Laser is , OPTICAL COMMUNICATIONS Up to 450mW Fiber Bragg Grating Stabilized 14xx nm Pump Modules S34 Series Key Features · Up to 450 mW (1420 and 1452 nm) · Up to 430 mW (1480 nm) · Up to 360 mW (1420 to 1465 nm) · Up to 340 mW (1466 to 1495 nm) · Up to 320 mW (1496 to 1510 nm) · Fiber Bragg , Power in band (t±2 nm) Spectral bandwidth, RMS Polarization extinction ratio Laser Diode Threshold ... | Original |
6 pages, |
GR-468-CORE k 1420 1480 nm diode laser thermistor 320 UV diode 250 nm UV diode 280 nm 220-1030 UV diode 100 nm to 280 nm 1480 nm laser diode UV diode 320 nm s34 diode datasheet abstract |
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| Abstract: 498-JDSU 498-JDSU (5378) The JDSU 3400 Series 14xx nm, 320/340/360 mW Diode Laser is wavelength selected between , COMMUNICATIONS COMPONENTS 14xx nm, 360 mW Diode Laser 3400 Series Key Features · Up to 360 mW (1420 to 1465 nm) · Up to 340 mW (1466 to 1495 nm) · Up to 320 mW (1496 to 1510 nm) · Grating , nm 180 870 200 950 220 1030 240 1110 260 1190 280 1270 300 1350 320 1400 340 1460 , ) Power in band (t ±2 nm) Spectral bandwidth, RMS Polarization extinction ratio Diode Laser Threshold ... | Original |
5 pages, |
UV diode 200 nm SM15 PIN photodiode 420 nm Laser Diode 405 nm CMPD UV diode 100 nm to 280 nm datasheet abstract |
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| Abstract: uV/°C 0.09 0.53 2.7 15 p = 635 nm, see Notes 6 and 7 IDD 15 p = 524 nm , light-emitting diode with the following characteristics: peak wavelength p = 470 nm, spectral halfwidth ½ = 35 , diode with the following characteristics: peak wavelength p = 524 nm, spectral halfwidth ½ = 47 nm , (irradiance) on the photodiode. Each device has a transimpedance gain of 320 M with improved offset voltage , (VD) 15 Ee = 1.6 uW/cm2, p = 524 nm, Note 5 2.7 1.3 2 1.18 0.35 1.25 0.14 p ... | Original |
9 pages, |
TSLR257 TSLG257 TSLB257 CM500 UV led diode 320 nm UV diode 320 nm TSLB257 abstract |
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| Abstract: 0.24 0.027 p = 565 nm, see Notes 7 and 8 0.015 0.20 0.06 0.033 0.093 uV/°C , supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength p = 470 nm , light-emitting diode with the following characteristics: peak wavelength p = 524 nm, spectral halfwidth ½ = 47 , diode with the following characteristics: peak wavelength p = 635 nm, spectral halfwidth ½ = 17 nm , diode with the following characteristics: peak wavelength p = 565 nm, spectral halfwidth ½ = 28 nm ... | Original |
8 pages, |
UV led diode 320 nm UV diode 200 nm TSLR257 TSLG257 TSLB257 CM500 TAOS027A TSLB257 abstract |
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| Abstract: transimpedance gain of 320 M with improved offset voltage stability and low power consumption, and is supplied , nm, Note 5 2.7 1.3 2 1.18 0.35 1.25 0.14 p =565 nm, see Notes 7 and 8 0.09 1.17 0.36 0.05 0.14 1.82 1.57 0.47 0.12 0.10 0.24 0.027 p = 565 nm, see Notes 7 and 8 0.015 0.20 0.06 0.033 0.093 uV/°C 0.09 0.53 2.7 15 p = 635 nm, see Notes 6 and 7 IDD 15 p = 524 nm, see Notes 5 and 7 PSRR 15 p = ... | Original |
8 pages, |
TSLR257 TSLG257 TSLB257 CM500 IC LM 565 TAOS027B TSLB257 abstract |
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| Abstract: light-emitting diode with the following characteristics: peak wavelength p = 565 nm, spectral halfwidth ½ = 28 nm. 7. The input irradiance is supplied by an AlGaAs light-emitting diode with the following , gain of 320 M. The device has improved offset voltage stability and low power consumption and is , 70 °C Electrical Characteristics at VDD = 5 V, TA = 25°C, p = 470 nm, RL = 10 k (unless , Maximum output voltage swing VO Output voltage Ee = 1.54 uW/cm2, p = 470 nm, Note 5 VD ... | Original |
6 pages, |
TSL257 Texas Advanced Optoelectronic Solutions TAOS023A TSL257 abstract |
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| Abstract: light-emitting diode with the following characteristics: peak wavelength p = 565 nm, spectral halfwidth ½ = 28 nm. 7. The input irradiance is supplied by an AlGaAs light-emitting diode with the following , gain of 320 M. The device has improved offset voltage stability and low power consumption and is , 70 °C Electrical Characteristics at VDD = 5 V, TA = 25°C, p = 470 nm, RL = 10 k (unless , Maximum output voltage swing VO Output voltage Ee = 1.54 uW/cm2, p = 470 nm, Note 5 VD ... | Original |
6 pages, |
TSL257 JUPITER TAOS023A TSL257 abstract |
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| Abstract: supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength p = 470 nm , light-emitting diode with the following characteristics: peak wavelength p = 565 nm, spectral halfwidth ½ = 28 , diode with the following characteristics: peak wavelength p = 635 nm, spectral halfwidth ½ = 17 nm , transimpedance gain of 320 M with improved offset voltage stability and low power consumption, and is supplied , , No Load TYP Ee = 1.8 uW/cm2, p = 470 nm, Note 4 MIN 15 0 VDD = 4.5 V, RL = 10 k ... | Original |
8 pages, |
TSLR257 TSLG257 TSLB257 CM500 TSLX257 TAOS027 TSLB257 abstract |
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| Abstract: made with Aluminum Indium Gallium Phosphide on Gallium Arsenide light emitting diode. The devices are , Iv 2F3VAK 2F3VAK-TU 2F3VAK-UV 1800 1800 3200 7000 6400 11200 med lF=20mA Note 1 Note 2 2H3VAK , 3600 2R3VAK 2R3VAK-QR 2R3VAK-RS 320 320 560 1500 1120 2000 Viewing Angle 2 e y2 2F3VAK 2H3VAK 2P3VAK 2R3VAK 8 15 22 30 deg Note 3 (Fig.6) Peak Emission Wavelength AP 623 nm Measurement @ peak (Fig.1) Dominant Wavelength Ad 612 nm Note 6 Spectral Line Half-Width A A 17 nm Forward Voltage ... | OCR Scan |
4 pages, |
UV LED 320 nm indium gallium arsenide phosphide datasheet abstract |
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| Abstract: Spectral response range = 320 to 1000 nm Amplifier transimpedance (gain) 3.125 V/mA Max. conversion gain , the input signal. The photodiode used offers a spectral range from 320 to 1000 nm with an active , ; (for frequency dependence see Fig. ?) 115 pW/ Hz 0.75 320 mm² 1000 nm Output , / * 1 mW / 0.67 V = 320 pW/ Hz Noise(BW) = NEP( = nm) * BW 473 Noise(93 MHz) = 320 pW/ Hz * 93 , , 3-Port 3.3" Spectralon Ulbricht Sphere Ocean Optics: USB2000 USB2000 Fiber-optic Spectrometer 320 - 1100 nm ... | Original |
15 pages, |
UV diode 320 nm TDS7404B ic212 818-st datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| ;HIGH UV-SENSIVITY;SUITABLE ESP. FOR APPLICATIONS AT 310nm;LOW SENSIVITY FOR VISIBLE AND INFRARED LIGHT ; ESPECIALLY SUITABLE FOR APPLICATIONS FROM 400 TO 1100nm; DOUBLE DIODE; HIGH PHOTOSENSITITVITY; FOR FOLLOW OF 920nm; DOUBLE DIODE; HIGH PHOTOSENSITITVITY; FOR FOLLOW-UP CONTROLS, EDGE CONTROLS, PATH AND ANGLE FOR APPLICATIONS FROM 400 TO 1100nm; HIGH PHOTOSENSITIVITY; DOUBLE DIODE WITH EXTREMELY HIGH ; ESPECIALLY SUITABLE FOR APPLICATIONS FROM 350 TO 820nm; FOR EXPOSURE METER FOR DAYLIGHT; FOR ARTIFICIAL LIGHT www.datasheetarchive.com/download/21266866-169524ZC/fotodiod.zip (fotodiod.xls) |
Infineon | 19/02/2000 | 56.28 Kb | ZIP | fotodiod.zip |
| ) AN-48 AN-48 AN-48 AN-48 : Applications for a New Ultra-High Speed Buffer (148 Kbytes; 04-Nov-95) AN-49 AN-49 AN-49 AN-49 : PIN Diode National UV EPROMS (91 Kbytes; 04-Nov-95) AN-474 AN-474 AN-474 AN-474 : HPC MICROWIRE/PLUS Master-Slave Handshaking Protocol ; 10-Jun-96) AN-557 AN-557 AN-557 AN-557 : Optimizing the Ultra-Fast POWERplanar Rectifier Diode for Switching Power EMI/RFI Board Design (487 Kbytes; 21-Jul-98) AN-644 AN-644 AN-644 AN-644 : Drawing Circles with the NS32GX32 NS32GX32 NS32GX32 NS32GX32 (320 ) AN-695 AN-695 AN-695 AN-695 : Digital Filtering with NS32GX320 (133 Kbytes; 05-Aug-95) AN-696 AN-696 AN-696 AN-696 : Understanding the NS www.datasheetarchive.com/files/national/htm/nsc00649-v3.htm |
National | 16/09/1998 | 101.3 Kb | HTM | nsc00649-v3.htm |
| : Applications for a New Ultra-High Speed Buffer (148 Kbytes; 04-Nov-95) AN-49 AN-49 AN-49 AN-49 : PIN Diode Drivers (121 .O.I.C. Reliability Compromised (72 Kbytes; 04-Nov-95) AN-472 AN-472 AN-472 AN-472 : Programming National UV EPROMS (91 Kbytes; 04-Nov the Ultra-Fast POWERplanar Rectifier Diode for Switching Power Supplies (151 Kbytes; 10-Jun-96) AN (250 Kbytes; 05-Aug-95) AN-644 AN-644 AN-644 AN-644 : Drawing Circles with the NS32GX32 NS32GX32 NS32GX32 NS32GX32 (320 Kbytes; 05-Aug-95) AN-653 AN-653 AN-653 AN-653 -Aug-95) AN-695 AN-695 AN-695 AN-695 : Digital Filtering with NS32GX320 (133 Kbytes; 05-Aug-95) AN-696 AN-696 AN-696 AN-696 www.datasheetarchive.com/files/national/docs/wcd00008/wcd00849.htm |
National | 03/04/1998 | 103.44 Kb | HTM | wcd00849.htm |
| Asynchronous Buses (153 Kbytes; 02-Mar-1999) AN-49 AN-49 AN-49 AN-49 : Application Note 49 PIN Diode Drivers (140 Kbytes Note 409 Transceivers and Repeaters Meeting the EIA RS-485 RS-485 RS-485 RS-485 Interface Standard (320 Kbytes; 05-Oct-1998 -Jun-1996) AN-557 AN-557 AN-557 AN-557 : Optimizing the Ultra-Fast POWERplanar Rectifier Diode for Switching Power Sources for the NM29N16 NAND Flash (57 Kbytes; 04-Nov-1995) AN-991 AN-991 AN-991 AN-991 : Line Driving and System Design Protocol (140 Kbytes; 04-Nov-1995) AN-472 AN-472 AN-472 AN-472 : Programming National UV EPROMS (91 Kbytes; 04-Nov-1995 www.datasheetarchive.com/files/national/htm/nsc00574.htm |
National | 13/08/1999 | 114.54 Kb | HTM | nsc00574.htm |
| ) AN-49 AN-49 AN-49 AN-49 : Application Note 49 PIN Diode Drivers (140 Kbytes; 02-Mar-1999) AN-56 AN-56 AN-56 AN-56 : 1.2 Volt Interface Standard (320 Kbytes; 05-Oct-1998) AN-411 AN-411 AN-411 AN-411 : Determining the Speed of the Dynamic RAM Needed UV EPROMS (91 Kbytes; 04-Nov-1995) AN-474 AN-474 AN-474 AN-474 : HPC MICROWIRE/PLUS Master-Slave Handshaking -Fast POWERplanar Rectifier Diode for Switching Power Supplies (151 Kbytes; 10-Jun-1996) AN-558 AN-558 AN-558 AN-558 Design (476 Kbytes; 05-Oct-1998) AN-644 AN-644 AN-644 AN-644 : Drawing Circles with the NS32GX32 NS32GX32 NS32GX32 NS32GX32 (320 Kbytes; 05-Aug www.datasheetarchive.com/files/national/htm/nsc00573.htm |
National | 13/08/1999 | 114.22 Kb | HTM | nsc00573.htm |
| (148 Kbytes; 04-Nov-95) AN-49 AN-49 AN-49 AN-49 : PIN Diode Drivers (121 Kbytes; 04-Nov-95) AN-56 AN-56 AN-56 AN-56 : 1.2 Volt Standard (320 Kbytes; 05-Oct-98) AN-411 AN-411 AN-411 AN-411 : Determining the Speed of the Dynamic RAM Needed when -Nov-95) AN-472 AN-472 AN-472 AN-472 : Programming National UV EPROMS (91 Kbytes; 04-Nov-95) AN-474 AN-474 AN-474 AN-474 : HPC MICROWIRE ; 10-Jun-96) AN-557 AN-557 AN-557 AN-557 : Optimizing the Ultra-Fast POWERplanar Rectifier Diode for Switching Power EMI/RFI Board Design (476 Kbytes; 05-Oct-98) AN-644 AN-644 AN-644 AN-644 : Drawing Circles with the NS32GX32 NS32GX32 NS32GX32 NS32GX32 (320 www.datasheetarchive.com/files/national/htm/nsc00653-v1.htm |
National | 18/12/1998 | 101.64 Kb | HTM | nsc00653-v1.htm |
| 1329 PUSH-PULL FOUR CHANNEL/DUAL H-BRIDGE DRIVER L293C L293C L293C L293C 1330 PUSH-PULL FOUR CHANNEL DRIVER WITH DIODES DUAL SCHOTTKY DIODE BRIDGE L6210 L6210 L6210 L6210 1376 SOLENOID DRIVER + SWITCH MODE POWER SUPPLY L6213 L6213 L6213 L6213 1377 STEPPER -FUNCTION PERIPHERAL TS68HC901 TS68HC901 TS68HC901 TS68HC901 2374 NMOS 128 KBIT (16KB X8) UV EPROM M27128A M27128A M27128A M27128A 2375 NMOS 16 KBIT (2KB X8) UV EPROM M2716 M2716 M2716 M2716 2376 NMOS 256 KBIT (32KB X8) UV EPROM M27256 M27256 M27256 M27256 2377 NMOS 32 KBIT (4KB X8) UV EPROM M2732A M2732A M2732A M2732A 2378 NMOS 512 KBIT (64KB X8) UV EPROM M27512 M27512 M27512 M27512 2379 NMOS 64 KBIT (8KB X8) UV EPROM M2764A M2764A M2764A M2764A 2380 1 MBIT (128KB 128KB 128KB 128KB www.datasheetarchive.com/files/stmicroelectronics/stonline/db/psearch-v1.txt |
STMicroelectronics | 20/10/2000 | 236.22 Kb | TXT | psearch-v1.txt |
| PUSH-PULL FOUR CHANNEL/DUAL H-BRIDGE DRIVER L293C L293C L293C L293C 1330 PUSH-PULL FOUR CHANNEL DRIVER WITH DIODES L293D L293D L293D L293D BRIDGE DRIVER L6204 L6204 L6204 L6204 L6204D L6204D L6204D L6204D 1375 DUAL SCHOTTKY DIODE BRIDGE L6210 L6210 L6210 L6210 1376 SOLENOID DRIVER + SWITCH MODE POWER 68230 2354 HCMOS MULTI-FUNCTION PERIPHERAL TS68HC901 TS68HC901 TS68HC901 TS68HC901 2374 NND - NMOS 128 KBIT (16KB X8) UV EPROM M27128A M27128A M27128A M27128A 2375 NND - NMOS 16 KBIT (2KB X8) UV EPROM M2716 M2716 M2716 M2716 2376 NND - NMOS 256 KBIT (32KB X8) UV EPROM M27256 M27256 M27256 M27256 2377 NND - NMOS 32 KBIT (4KB X8) UV EPROM M2732A M2732A M2732A M2732A 2378 NND - NMOS 512 KBIT (64KB X8) UV EPROM M27512 M27512 M27512 M27512 2379 www.datasheetarchive.com/files/stmicroelectronics/stonline/db/psearch.txt |
STMicroelectronics | 02/02/2001 | 240.03 Kb | TXT | psearch.txt |
| ZTX238B ZTX238B ZTX238B ZTX238B ZTX238B ZTX238B ZTX238B ZTX238B BJTs NPN Zetex ZTX239B ZTX239B ZTX239B ZTX239B ZTX239B ZTX239B ZTX239B ZTX239B BJTs NPN Zetex ZTX239 ZTX239 ZTX239 ZTX239 ZTX239 ZTX239 ZTX239 ZTX239 BJTs NPN Zetex ZTX320 ZTX320 BJTs NPN Zetex ZTX321 ZTX321 ZTX321 ZTX321 ZTX321 ZTX321 ZTX321 ZTX321 BJTs NPN Zetex ZTX325 ZTX325 ZTX325 ZTX325 ZTX325 ZTX325 ZTX325 ZTX325 BJTs NPN Zetex ZTX327 ZTX327 ZTX327 ZTX327 ZTX327 ZTX327 ZTX327 ZTX327 BJTs NPN www.datasheetarchive.com/download/79967802-777574ZC/icap4winliblist.zip (ICAP4WinlibList.xls) |
Spice Models | 29/07/2012 | 388.92 Kb | ZIP | icap4winliblist.zip |
| SERIAL SPI EEPROM WITH HIGH SPEED CLOCK AND POSITIVE CLOCK STROBE 5711 M95320-BN3 M95320-BN3 M95320-BN3 M95320-BN3 25C320-E 5711 M95320-MN3 M95320-MN3 M95320-MN3 M95320-MN3 25C320-E/SN Replacement Microchip 64/32/16/8 KBIT SERIAL SPI EEPROM WITH HIGH SPEED CLOCK AND POSITIVE CLOCK STROBE 5711 M95320-BN6 M95320-BN6 M95320-BN6 M95320-BN6 25C320-I/P Replacement Microchip 64/32/16/8 KBIT SERIAL SPI EEPROM WITH HIGH SPEED CLOCK AND POSITIVE CLOCK STROBE 5711 M95320-MN6 M95320-MN6 M95320-MN6 M95320-MN6 25C320-I 5711 M95320-BN6 M95320-BN6 M95320-BN6 M95320-BN6 25C320/P Replacement Microchip 64/32/16/8 KBIT SERIAL SPI EEPROM WITH HIGH SPEED CLOCK www.datasheetarchive.com/files/stmicroelectronics/stonline/db/xref-v3.txt |
STMicroelectronics | 20/10/2000 | 1842.28 Kb | TXT | xref-v3.txt |