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UC1612L Texas Instruments UC1612 Dual Schottky Diode ri Buy
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UC3612N Texas Instruments UC3612 Dual Schottky Diode ri Buy

UV diode 320 nm

Catalog Datasheet Results Type PDF Document Tags
Abstract: AMERICA : 800 498-JDSU 498-JDSU (5378) The JDSU S34 series 14xx nm, 320/340/360/430/450 mW Diode Laser is , OPTICAL COMMUNICATIONS Up to 450mW Fiber Bragg Grating Stabilized 14xx nm Pump Modules S34 Series Key Features · Up to 450 mW (1420 and 1452 nm) · Up to 430 mW (1480 nm) · Up to 360 mW (1420 to 1465 nm) · Up to 340 mW (1466 to 1495 nm) · Up to 320 mW (1496 to 1510 nm) · Fiber Bragg , Power in band (t±2 nm) Spectral bandwidth, RMS Polarization extinction ratio Laser Diode Threshold ... Original
datasheet

6 pages,
361.07 Kb

UV laser diode 280 nm 1480 nm diode laser GR-468-CORE k 1420 thermistor 320 UV diode 250 nm 220-1030 UV diode 100 nm to 280 nm s34 power diode 1480 nm laser diode UV diode 280 nm UV diode 320 nm s34 diode datasheet abstract
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Abstract: nm, 320/340/360 mW Laser Diode is wavelength selected between 1420 and 1510 nm using , COMMUNICATIONS COMPONENTS 14xx nm, 360 mW Laser Diode 3400 Series Key Features · Up to 360 mW (1420 to 1465 nm) · Up to 340 mW (1466 to 1495 nm) · Up to 320 mW (1496 to 1510 nm) · Grating , 1190 280 1270 300 1350 320 1350 340 1400 360 1460 Target Wavelength Range 1466 to 1495 nm 180 870 200 , 1510 nm 180 870 200 950 220 1040 240 1140 260 1240 280 1350 300 1400 320 1460 1. Iop EOL = 1.2 x Iop ... Original
datasheet

5 pages,
158.18 Kb

UV diode 320 nm UV diode 100 nm to 280 nm datasheet abstract
datasheet frame
Abstract: 498-JDSU 498-JDSU (5378) The JDSU 3400 Series 14xx nm, 320/340/360 mW Diode Laser is wavelength selected between , COMMUNICATIONS COMPONENTS 14xx nm, 360 mW Diode Laser 3400 Series Key Features · Up to 360 mW (1420 to 1465 nm) · Up to 340 mW (1466 to 1495 nm) · Up to 320 mW (1496 to 1510 nm) · Grating , nm 180 870 200 950 220 1030 240 1110 260 1190 280 1270 300 1350 320 1400 340 1460 , ) Power in band (t ±2 nm) Spectral bandwidth, RMS Polarization extinction ratio Diode Laser Threshold ... Original
datasheet

5 pages,
160.54 Kb

UV diode 320 nm UV diode 200 nm SM15 PIN photodiode 420 nm Laser Diode 405 nm CMPD UV diode 100 nm to 280 nm datasheet abstract
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Abstract: Features · 1550 nm WDM distributed feedback laser diode · High power (>63 mW) · Polarization maintaining , Product Bulletin 63 mW 1550 nm CW DFB Lasers with PM Fiber for WDM Applications CQF935/908 CQF935/908 , 1610.06 nm) and in channel definition, thus adhering to the 100 GHz grid (0.8 nm) relative to a frequency of 193.1 THz (i.e., a wavelength of 1552.52 nm). It is possible to customize the wavelength spacing to a 50 GHz grid (0.4 nm). Each laser's wavelength is accurately measured, and the laser itself is ... Original
datasheet

4 pages,
184.54 Kb

CQF935 uniphase CQF935 JDSU CQF935 DFB CQF935/908 CQF935/908 abstract
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Abstract: diode. The devices are made with water clear epoxy package, and with 8, 15, 22 and 3 0 degrees of viewing , 450 500 550 600 650 700 750 f;,'! ^QWtength (nm) F ig . 1 RELATIVE IN T , 2F3VAK-UV 2H3VAK 2H3VAK-ST 2H3VAK-TU 2P3VAK 2P3VAK-RS 2P3VAK-ST 2R3VAK 2R3VAK-QR 2R3VAK-RS 2F3VAK 2H3VAK 2P3VAK 2R3VAK Min. 1800 1800 3200 1000 1000 1800 560 560 1000 320 320 560 Typ. 7000 Max. , Peak Emission Wavelength Dominant Wavelength Spectral Line Half-Width Forward Voltage AP nm ... OCR Scan
datasheet

4 pages,
210.84 Kb

datasheet abstract
datasheet frame
Abstract: 0.24 0.027 p = 565 nm, see Notes 7 and 8 0.015 0.20 0.06 0.033 0.093 µV/°C , supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength p = 470 nm , light-emitting diode with the following characteristics: peak wavelength p = 524 nm, spectral halfwidth ½ = 47 , diode with the following characteristics: peak wavelength p = 635 nm, spectral halfwidth ½ = 17 nm , diode with the following characteristics: peak wavelength p = 565 nm, spectral halfwidth ½ = 28 nm ... Original
datasheet

8 pages,
99.59 Kb

UV led diode 320 nm UV diode 200 nm TSLX257 TSLR257 TSLG257 TSLB257 Texas Advanced Optoelectronic Solutions CM500 TAOS027A TSLB257 abstract
datasheet frame
Abstract: transimpedance gain of 320 M with improved offset voltage stability and low power consumption, and is supplied , nm, Note 5 2.7 1.3 2 1.18 0.35 1.25 0.14 p =565 nm, see Notes 7 and 8 0.09 1.17 0.36 0.05 0.14 1.82 1.57 0.47 0.12 0.10 0.24 0.027 p = 565 nm, see Notes 7 and 8 0.015 0.20 0.06 0.033 0.093 µV/°C 0.09 0.53 2.7 ­15 p = 635 nm, see Notes 6 and 7 IDD ­15 p = 524 nm, see Notes 5 and 7 PSRR ­15 p = ... Original
datasheet

8 pages,
100.46 Kb

TSLR257 TSLG257 TSLB257 CM500 TSLX257 IC LM 565 TAOS027B TSLB257 abstract
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Abstract: µV/°C 0.09 0.53 2.7 ­15 p = 635 nm, see Notes 6 and 7 IDD ­15 p = 524 nm , light-emitting diode with the following characteristics: peak wavelength p = 470 nm, spectral halfwidth ½ = 35 , diode with the following characteristics: peak wavelength p = 524 nm, spectral halfwidth ½ = 47 nm , (irradiance) on the photodiode. Each device has a transimpedance gain of 320 M with improved offset voltage , (VD) 15 Ee = 1.6 µW/cm2, p = 524 nm, Note 5 2.7 1.3 2 1.18 0.35 1.25 0.14 p ... Original
datasheet

9 pages,
107.2 Kb

TSLR257 TSLG257 TSLB257 CM500 UV led diode 320 nm UV diode 320 nm TSLB257 abstract
datasheet frame
Abstract: use. T he NM OS linear im age sensors also feature large active areas, high UV sensitivity and , area of 1.175mm (width) X 2.0mm (height) with 1.575mm pitch. This diode is s p e cia lly designed fo r , range from the UV through near infrared region. T hey also feature low cross-talk between elements, thus , Typ. (nm) (A/W) 800 0.5 Dark Current Id V r=5V Typ. (nA) 0.1 120 Cut-off Frequency fc Vn=5V, Rl = 50Q Typ. (MHz) 100 320 to 1000 0.95X0.95 ; i! · I - . - - .I - - -* . ' Elem ... OCR Scan
datasheet

2 pages,
146.15 Kb

silicon PIN photodiode driver AGE Module C4351 dual photodiode Linear Image sensor IC photodiode 1024 elements silicon photodiode 256 elements silicon PHOTODIODE 4 CHANNEL Photodiode Array 2d silicon photodiode array sensor x-ray 9 ELEMENT photoDIODE ARRAY 16-ELEMENT S5668 16-ELEMENT abstract
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Abstract: light-emitting diode with the following characteristics: peak wavelength p = 565 nm, spectral halfwidth ½ = 28 nm. 7. The input irradiance is supplied by an AlGaAs light-emitting diode with the following , gain of 320 M. The device has improved offset voltage stability and low power consumption and is , 70 °C Electrical Characteristics at VDD = 5 V, TA = 25°C, p = 470 nm, RL = 10 k (unless , Maximum output voltage swing VO Output voltage Ee = 1.54 µW/cm2, p = 470 nm, Note 5 VD ... Original
datasheet

6 pages,
78.49 Kb

TSL257 Light-emitting diode sic Gan on silicon substrate JUPITER TAOS023A TSL257 abstract
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www.datasheetarchive.com/download/14624453-382344ZC/vsc7173_77_hspice.zip (models_mos.enc)
Maxim 09/02/2012 250.89 Kb ZIP vsc7173_77_hspice.zip
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www.datasheetarchive.com/download/90212243-999460ZC/dbookold.zip (DBOOKOLD.PDF)
Xilinx 07/09/1996 10340.01 Kb ZIP dbookold.zip
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www.datasheetarchive.com/download/64007008-139818ZD/00104f.zip (00104f.pdf)
Microchip 01/06/2002 87251.33 Kb ZIP 00104f.zip
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www.datasheetarchive.com/download/26555896-2732ZC/fulltext.dic
Allied Electronics 31/07/2001 4264.14 Kb DIC fulltext.dic