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Part Manufacturer Description Datasheet BUY
LT3519EMS-2#TRPBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3519EMS-2#PBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3519EMS#TRPBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3519IMS#TRPBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3519IMS-1#PBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3519EMS#PBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

UHF schottky diode

Catalog Datasheet MFG & Type PDF Document Tags

SMD Codes

Abstract: TRANSISTOR SMD T1P MBD201 MBD301 UHF schottky diode MV2105 varicap MV2106 varicap npn 32V 0.8A 4.3V 0.3W zener 4.7V 0.3W , 20 dB gain BC328-25 BC328-40 BC328-40 BC328-40 dual series MBD101 BC328-40 MBD701 UHF schottky diode , dual cc Si diode 200V 100mA dual cc Schottky 25V 100mA dual cc Schottky 25V 100mA pnp dtr 30V 50mA , schottky diode 2N6517 npn Vce 350V Codes beginning with '2' Code 2 2 (blue) 2 2 (white) 20 -20 20F 20V , Equivalent/Data BAT16 schottky diode pin diode npn RF fT8GHz 12dB@2GHz 29-5 pF varicap npn Rf fT 5GHz 0.2A
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SMD Codes TRANSISTOR SMD T1P BAW92 MMBD2104 schottky diode s6 81A smd transistor A6a BC846A FMMT3904 BZV49 BZV55 BAS32 BAS45

MMBD2103

Abstract: ZENER DIODE t2d vhf pin diode MBD201 MBD301 UHF schottky diode MV2105 varicap MV2106 varicap npn 32V 0.8A 4.3V 0.3W , -40 dual series MBD101 BC328-40 MBD701 UHF schottky diode BC328 BC328 1N4148 1N4148 BCX38B Hyperabrupt varicap dual cc 3GHz RF pin diode dual cc Hyperabrupt varicap series UHF schottky diodes 2N2907A npn 45V , 100mA Schottky RF 20V 100mA npn/pnp dtr 47k+47k dual Si diode 200V 100mA dual ca 13V 0.3W zener dual ca , 10k + 10k dual cc Si diode 200V 100mA dual cc Schottky 25V 100mA dual cc Schottky 25V 100mA pnp dtr
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MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAV105 LL4148 LL4448 BB241 BB249 LL914

MMBD2104

Abstract: Transistor NEC 05F dual schottky 250V 0.4A 200V vhf pin diode MBD201 MBD301 UHF schottky diode MV2105 varicap MV2106 , MBD101 BC328-40 MBD701 UHF schottky diode BC328 BC328 1N4148 1N4148 BCX38B Hyperabrupt varicap dual cc 3GHz RF pin diode dual cc Hyperabrupt varicap series UHF schottky diodes 2N2907A npn 45V 0.8A 350mW npn , bias res npn/pnp 10k base res dual cc Si diode 200V 100mA dual cc Schottky 25V 100mA dual cc Schottky , SOT346 SOT89 SOT23 SOT323 SOT323 SOT23 Leaded Equivalent/Data BAT16 schottky diode pin diode npn RF
SMD Code Book
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hp2835 diode what is the equivalent of ZTX 458 transistor T2D DIODE 3w NDS358N mmbf4932 2n2222 as equivalent for bfr96 LL4150 BB219 LL300 BA682 BA683 BA423L

smd code book

Abstract: transistor SMD P1f UHF schottky diode MV2105 varicap MV2106 varicap npn 32V 0.8A 4.3V 0.3W zener 4.7V 0.3W zener MV2107 , schottky dual zener 4.7V 0.15W schottky diode 4V 100mA dg mosfet MOSIC 5V uhf tv tuners pnp dtr 10k + 47k , 18GHz schottky diode 18GHz schottky ring quad 18GHz schottky dual biased dg mosfet MOSIC 5V uhf tv , MBD101 BC328-40 MBD701 UHF schottky diode BC328 BC328 1N4148 1N4148 BCX38B SOT23 SOT23 SOT23 SOT23R , band switch diode 56-2.7 pF varicap npn Rf 8GHz MRF941 30V 0.2A schottky diode dual ca 10V 0.3W zener
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smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s 2SC3603 PDTA143ET SSTPAD10 SO2369R BST82 MRF5711L

Gunn Diode

Abstract: Microwave Silicon Detector Diode HIGH POWER MICROWAVE GUNN DIODE HIGH POWER MICROWAVE GUNN DIODE DC1301 DC1301C GaAs SCHOTTKY X-BANO MICROSTRIP MIXER DIODE GaAs SCHOTTKY X-BAND MICROSTRIP MIXER DIODE 49 49 DC13Q2 DC1303 GaAs SCHOTTKY X-BAND WAVEGUIDE MIXER DIODE GaAs SCHOTTKY X-BAND MICROSTRIP LID DETECTOR DIODE GaAs SCHOTTKY X-BAND WAVEGUIDE MIXER DIODE 55 DC1304 8 198 53 llllllllll® Product List , DIODE GaAs SCHOTTKY X-BAND MICROSTRIP LID DETECTOR DIODE GaAs SCHOTTKY J-BAND MICROSTRIP LID DETECTOR
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Gunn Diode Microwave Silicon Detector Diode Silicon Detector UHF diode varactor diode filter DW9248 DA1304 DA1307 DA1321 DA1321-1 DA1338 DA1338-1

siemens diodes

Abstract: di_hit_hsr276_19930908 : 182-02, SCHOTTKY if(max)=NA, Vr(max)=4, P(max)=280, UHF Mixer di_mot_1n5444a_19930908 1n5444a , , SCHOTTKY if(max)=NA, Vr(max)=4, P(max)=280, UHF Mixer di_mot_mmbd301l_19930908 mmbd301l: SOT23 , Vendor Component Libraries High-Frequency Diode Library December 2003 Notice The information , Contents 1 High-Frequency Diode Library Agilent Technologies Diodes , . Index 1-2 1-6 1-7 1-9 1-10 1-11 1-12 iii iv Chapter 1: High-Frequency Diode
Agilent Technologies
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siemens diodes di_hit_hsr276_19930908 HSMS-286x Motorola diodes hitachi naming convention hitachi part naming

motorola diodes

Abstract: BB219 : 182-02, SCHOTTKY if(max)=NA, Vr(max)=4, P(max)=280, UHF Mixer di_mot_1n5444a_19930908 1n5444a , , SCHOTTKY if(max)=NA, Vr(max)=4, P(max)=280, UHF Mixer di_mot_mmbd301l_19930908 mmbd301l: SOT23 , Vendor Component Libraries High-Frequency Diode Library September 2004 Notice The , High-Frequency Diode Library Agilent Technologies Diodes , . Index 1-2 1-6 1-7 1-9 1-10 1-11 1-12 iii iv Chapter 1: High-Frequency Diode
Agilent Technologies
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HSMS2825 HSMS8101 BB515 hsms282n di_hit_1ss166_19930908 1T32

DIODE SW-05

Abstract: , Matched Diode Pair D07 91 40 0.05 0.5 1 @ 9mA - 112 Si TV UHF Mixer D07 91 5 0.015 -, 0.5 @ 15mA 1.15 Se Common Anode Dual Diode for TV Application , 400 8 150 1.2 @ 3A 150 583 Si Schottky Switching for High Level UHF/VHF Det & , Si Damper Diode for TV Appl Bridged Pair â' 190 5000 0.6 8 4.4 @ 0.5A 4|is 174 Ge Damper Diode for TV Appl T066 173 270 6 25 0.6 @ 5A - 177 Si
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DIODE SW-05 110MP D027A 173BP D0127 200MH T0220

diode 349A

Abstract: UHF schottky diode MMDL101T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high­efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital , ://onsemi.com 1.0 pF SCHOTTKY BARRIER DIODE THERMAL CHARACTERISTICS 1 Symbol PD Characteristic , under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz , °C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Diode Capacitance (VR = 0
ON Semiconductor
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diode 349A UHF schottky diode nf amplifier low voltage 20 GHz schottky diode MMDL101T1/D MMBD110T1

diode 349A

Abstract: S1 DIODE schottky Schottky Barrier Diode Schottky barrier diodes are designed primarily for high­efficiency UHF and , . MMDL101T1 1.0 pF SCHOTTKY BARRIER DIODE · Very Low Capacitance - Less than 1.0 pF @ Zero Volts · Low , Note2-Noise figure measured with diode under test in tuned diode mount using UHF noise source and local , R = 10 µA) Diode Capacitance (V R = 0, f = 1.0MHz, Note 1) Reverse Leakage (V R = 3.0 V) Noise , , LOCAL OSCILLATOR POWER (mW) Figure 3. Capacitance Figure 4. Noise Figure LOCAL OSCILLATOR UHF
ETL Semiconductor
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S1 DIODE schottky S11 SCHOTTKY diode mmbd110

diode 349A

Abstract: mmbd110 MMDL101T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital , ://onsemi.com 1.0 pF SCHOTTKY BARRIER DIODE THERMAL CHARACTERISTICS 1 Symbol PD Characteristic , under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz , °C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Diode Capacitance (VR = 0
ON Semiconductor
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diode 349A

Abstract: S11 SCHOTTKY diode LESHAN RADIO COMPANY, LTD. Schottky Barrier Diode Schottky barrier diodes are designed primarily for high­efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. MMDL101T1 1.0 pF SCHOTTKY BARRIER DIODE · Very Low , Note2-Noise figure measured with diode under test in tuned diode mount using UHF noise source and local , otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Diode Capacitance (V R = 0, f =
Leshan Radio Company
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MBD102

Abstract: diode 349A MBD102 (SILICON) SILICON HOT-CARRIER DIODE (SCHOTTKY BARRIER DIODE) . . . designed primarily for UHF mixer applications but suitable also for use in detector and ultra-fast switching circuits , specific requirements. SILICON HOT-CARRIER UHF MIXER DIODE B C dim mil lin eters inc h es , CIRCUIT NOISE FIGURE METER H.P. 342A LOCAL OSCILLATOR UHF NOISE SOURCE H.P. 349A DIODE IN , â'" Noise figure measured with diode under test in tuned diode mount using UHF noise source and
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dioda bridge noise source diode

SOD882

Abstract: sod87 Melf diodes are used for UHF applications · Low VF Schottky diodes offer a much lower forward voltage drop , especially useful in high current, low voltage applications, a low VF Schottky diode (e.g. BAT754) reduces forward voltage by at least 20% compared to a standard Schottky diode (e.g. BAT54). · Low CD Schottky , capacitance. Compared to a standard Schottky diode (e.g. BAT54), the low CD Schottky diode 1PS79SB63 offers , ultra fast switching behaviour · low CD Schottky diodes are used for UHF applications RF in
Philips Semiconductors
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1PS76SB17 1PS76SB62 SOD882 sod87 Melf 1N5817 MELF 1PS74SB43 1PS59SB10 1PS59SB20 SC-79 SC-76 SC-70 SC-88 1PS10SB63 1PS10SB62

SV153A

Abstract: Sv153 Band VHF SMQ 3SK151 3SK153 USQ * 3SK260 *3SK259 Schottky Diode UHF SMC use 1SS242 1SS315 IF A m p. Tuning Varicap Diode UHF Wide Band VHF SMC SMC 1SV161 1SV226 1SV153A 1SV211 1SV227 1SV153 , SM 2SC3121 Schottky Diode SM Q 1 S S2 3 9 SM 1 S S1 5 4 Si Dual Gate M O S FET SM Q 3SK199 3 SK2 3 , Tuning Varicap SM C 1 SV153A 1SV224 use 1S V 2 14 1SV230 SSC » 1SV254 » 1SV258 Schottky Diode SM C 1 S , »NEW * 2 SC 5 0 8 7 Bi-Transistor SM Q » 2SC 50 8 7 * 2 SC 50 9 2 Schottky Diode SM C 1 S S2 3 9
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2SC491 4007F 1SV103 SK192A Sv153 varicap diode Am tuning varicap 1sV103 transistor 2SC2670 2SC2715 2SC2716 1SV128 1SV271 1SV172

ND487R1-3R

Abstract: DOUBLE BALANCED MODULATOR _ PRELIMINARY SPECIFICATION ELECTRON DEVICE NEC UHF M O DULATOR DIODE Q U A D N D 4 8 7 R 1 -3 R UHF DOUBLE BALANCED MODULATOR SILICON EPITAXIAL SCHOTTKY BARRIER DIODE QUAD The ND487R1-3R is schottky barrier diode quad interconnected in ring con PACKAGE DIMENSIONS (U nit : mm) figuration, especially designed for use in double balanced mixers, phase detectors, AM modulators, and pulse modulators. FEATURES · M onolithic array · Diode ring configuration · Wideband
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DOUBLE BALANCED MODULATOR DIODE AM MODULATOR pj diode pj 50 diode nd487r13r

nd487c2-3r

Abstract: DIODE AM MODULATOR PRELIMINARY SPECIFICATION NEC ELfCTRON DEVICE UHF MODULATOR DIODE QUAD ND487C2-3R UHF DOUBLE BALANCED MODULATOR SILICON EPITAXIAL SCHOTTKY BARRIER DIODE QUAD The ND487C2-3R is schottky barrier diode quad interconnected in cross con figuration, especially designed fo r use in double balanced mixers, phase detec tors, AM modulators, and pulse modulators. FEATURES · M onolithic array · Diode cross configuration · Wideband operation · Small size package · Low cost ABSOLUTE M AXIM UM RATINGS
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uhf modulator ND487c2

MBI-101

Abstract: noise diode MBI-101 (SILICON) SILICON HOT-CARRIER MICRO-I DIODE (SCHOTTKY BARRIER DIODE) . . . designed primarily for UHF mixer applications but suitable also for use in detector and ultra-fast switching circuits. â'¢ The Rugged Schottky Barrier Construction Provides Stable Char- acteristics by Eliminating the , Volts Diode Capacitance (VR = 0,f- 1.0MHz, Note 1) cT - 0.88 1.0 pF Forward Voltage llF » 10mA) VpHI , Case Capacitance (Note 1 ) If - 1.0 MHz, Lead Length « 1/16") cc - 0.15 - pF SILICON HOT-CARRIER UHF
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noise diode ik60

DIODE CQ 521

Abstract: MBD101 MBD101 (SILICON) SILICON HOT-CARRIER DIODE (SCHOTTKY BARRIER DIODE) . . . designed primarily for UHF mixer applications but suitable also for use in detector and ultra-fast switching circuits , Volts â'¢ High Forward Conductance - 0.48 Volts (Typ) @ lp = 10 mA SILICON HOT-CARRIER UHF MIXER DIODE , Schottky Barrier Construction Provides Stable Char- acteristics by Eliminating the "Cat Whisker" Contact , ) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR - 10,iA) V(BR)R 4.0 5.0 - Volts Diode
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DIODE CQ 521 01ck

DIODE AM MODULATOR

Abstract: quad schottky diode array _PRELIMINARY SPECIFICATION NEC ELECTRON DEVICE UHF MODULATOR DIODE QUAD N D 4 8 7 R 2 -3 R UHF DOUBLE BALANCED MODULATOR SILICON EPITAXIAL SCHOTTKY BARRIER DIODE QUAD The N D 487R 2-3R is schottky barrier diode quad interconnected in ring con figuration, especially designed for use in double balanced mixers, phase detectors, AM modulators, and pulse modulators. FEATURES · Monolithic array · Diode ring configuration · Wideband operation · Small size package · Low cost
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quad schottky diode array 487R2-3R
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